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1. 发明授权

US5545429A Fabrication of double side fully metallized plated thru-holes, in polymer structures, without seeding or photoprocess 失效
标题翻译：在聚合物结构中制造双面全金属镀层通孔，无接种或光刻处理
公开(公告)号：US5545429A
公开(公告)日：1996-08-13
申请号：US270086
申请日：1994-07-01
申请人： Richard B. Booth , Emanuel I. Cooper , Edward A. Giess , Mark R. Kordus , Sol Krongelb , Steven P. Ostrander , Judith M. Roldan , Carlos J. Sambucetti , Ravi Saraf
发明人： Richard B. Booth , Emanuel I. Cooper , Edward A. Giess , Mark R. Kordus , Sol Krongelb , Steven P. Ostrander , Judith M. Roldan , Carlos J. Sambucetti , Ravi Saraf
IPC分类号： H05K3/20 , H05K3/32 , H05K3/42 , B05D5/12 , C25D5/02
CPC分类号： H05K3/423 , H05K2203/0152 , H05K2203/0733 , H05K2203/1509 , H05K3/205 , H05K3/321
摘要： The present invention is directed to a process of a method for the full metallization of thru-holes in a polymer structure comprising the steps of applying a film-forming amount of a conductive polymer-metal composite paste to a metal cathode; bonding a patterned polymer structure to said paste; subjecting said polymer structure to an electrolytic plating bath for a time sufficient to fully metallize thru-hole surfaces in said patterned polymer structure and removing the structure from the cathode assembly. The fully metallized thru-hole polymer structure can then be cleaned and polished to produce a finished product.
摘要翻译：本发明涉及一种在聚合物结构中贯穿孔的全金属化方法的方法，包括以下步骤：向金属阴极施加成膜量的导电聚合物 - 金属复合浆料; 将图案化的聚合物结构键合到所述糊料; 使所述聚合物结构经受电解电镀浴足够的时间以完全金属化所述图案化的聚合物结构中的通孔表面，并从阴极组件中去除结构。完全金属化的通孔聚合物结构然后可以被清洁和抛光以产生成品。

2. 发明授权

US5310580A Electroless metal adhesion to organic dielectric material with phase separated morphology 失效
标题翻译：无机金属与相分离形态的有机介电材料粘合
公开(公告)号：US5310580A
公开(公告)日：1994-05-10
申请号：US874665
申请日：1992-04-27
申请人： Eugene J. O'Sullivan , Terrence R. O'Toole , Judith M. Roldan , Lubomyr T. Romankiw , Carlos J. Sambucetti , Ravi Saraf
发明人： Eugene J. O'Sullivan , Terrence R. O'Toole , Judith M. Roldan , Lubomyr T. Romankiw , Carlos J. Sambucetti , Ravi Saraf
IPC分类号： B05D1/34 , C23C18/20 , H05K3/18 , H05K3/38 , B05D2/06
CPC分类号： H05K3/387 , B05D1/34 , C23C18/20 , C23C18/2033 , C23C18/208 , C23C18/24 , C23C18/30 , H05K2201/0154 , H05K2201/0212 , H05K2203/0759 , H05K2203/0773 , H05K2203/0793 , H05K3/181 , H05K3/381
摘要： Improved adhesion of electroless metal deposited on an organic dielectric layer with phase separated morphology is accomplished by the spontaneous formation of a morphologically and topographically rough surface. In one embodiment a ternary solution of a polar solvent and two polymer precursors of the same polymer which are separable in two phases of different order are cast in film on a substrate and heated to form two phases of different order to spontaneously produce a rough surface. Upon exposure to an alkaline solution, one phase is etched at a faster rate than the other. Seeding and electroless deposition of a metal on the rough surface results in improved adhesion of the metal to the dielectric layer. In a second embodiment a quaternary solution of a polar solvent, a seeding agent, two polymer precursors of the same polymer which are separable in two phases of different order are cast in a thin film on a substrate and heated to form three phases. Upon curing the precursors there is surface roughening as a result of phase separation. Upon exposure to alkaline solution there is etching of one of the polymer phases at a faster rate and simultaneous opening of the seeding colloid. The rough surface is overcoated with a photoresist, exposed and developed. Subsequent electroless metal deposition results in improved metal to dielectric layer adhesion. The method is applicable to selective deposition of electroless copper onto a polyimide layer.
摘要翻译：沉积在具有相分离形态的有机电介质层上的化学金属的改善的粘附通过自发形成形态和形貌上粗糙的表面来实现。在一个实施方案中，可以将不同顺序的两相分离的相同聚合物的极性溶剂和两种聚合物前体的三元溶液在基材上成膜并加热形成不同阶数的两相以自发产生粗糙表面。在暴露于碱性溶液时，以比另一相更快的速率蚀刻一相。在粗糙表面上的金属的接种和无电沉积导致金属对电介质层的附着力提高。在第二个实施方案中，将极性溶剂，接种剂，可以在两相中分离的相同聚合物的两种聚合物前体的四元溶液浇铸在基材上的薄膜中，并加热形成三相。固化前体由于相分离而导致表面粗糙化。暴露在碱性溶液中时，以更快的速率蚀刻聚合物相之一并同时打开接种胶体。粗糙表面用光致抗蚀剂涂覆，曝光和显影。随后的无电金属沉积导致金属与电介质层粘附性的改善。该方法适用于将化学镀铜选择性沉积到聚酰亚胺层上。

3. 发明授权

US5747101A Direct chip attachment (DCA) with electrically conductive adhesives 失效
公开(公告)号：US5747101A
公开(公告)日：1998-05-05
申请号：US630033
申请日：1996-04-09
申请人： Richard B. Booth , Michael A. Gaynes , Robert M. Murcko , Viswanadham Puligandla , Judith M. Roldan , Ravi Saraf , Jerzy M. Zalesinski
发明人： Richard B. Booth , Michael A. Gaynes , Robert M. Murcko , Viswanadham Puligandla , Judith M. Roldan , Ravi Saraf , Jerzy M. Zalesinski
IPC分类号： H01L21/56 , H01L21/60 , H01L23/485 , H01R4/04 , B05D5/12
CPC分类号： H01L24/10 , H01L21/563 , H01L24/13 , H01L24/27 , H01L24/28 , H01L24/83 , H01L2224/13 , H01L2224/13099 , H01L2224/1319 , H01L2224/16 , H01L2224/274 , H01L2224/73104 , H01L2224/73203 , H01L2224/8319 , H01L2224/838 , H01L2224/90 , H01L24/90 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , Y10T29/49204 , Y10T29/49222
摘要： A simple process for card assembly by Direct Chip Attachment (DCA) uses electrically conductive adhesives. Two methods create the same intermediate wafer product with a layer of insulative thermoplastic and conductive thermoplastic bumps. After sawing or dicing the wafer to form the chips, the chips are adhered to chip carriers with conductive pads which match the conductive thermoplastic bumps, using heat and pressure. Chips may be easily removed and replaced using heat.

4. 发明授权

US5543585A Direct chip attachment (DCA) with electrically conductive adhesives 失效
标题翻译：直接芯片连接（DCA）与导电粘合剂
公开(公告)号：US5543585A
公开(公告)日：1996-08-06
申请号：US190507
申请日：1994-02-02
申请人： Richard B. Booth , Michael A. Gaynes , Robert M. Murco , Viswanadham Puligandla , Judith M. Roldan , Ravi Saraf , Jerzy M. Zalesinski
发明人： Richard B. Booth , Michael A. Gaynes , Robert M. Murco , Viswanadham Puligandla , Judith M. Roldan , Ravi Saraf , Jerzy M. Zalesinski
IPC分类号： H01L21/56 , H01L21/60 , H01L23/485 , H01R4/04 , H05K1/18
CPC分类号： H01L24/10 , H01L21/563 , H01L24/13 , H01L24/27 , H01L24/28 , H01L24/83 , H01L2224/13 , H01L2224/13099 , H01L2224/1319 , H01L2224/16 , H01L2224/274 , H01L2224/73104 , H01L2224/73203 , H01L2224/8319 , H01L2224/838 , H01L2224/90 , H01L24/90 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , Y10T29/49204 , Y10T29/49222
摘要： A simple process for card assembly by Direct Chip Attachment (DCA) uses electrically conductive adhesives. Two methods create the same intermediate wafer product with a layer of insulative thermoplastic and conductive thermoplastic bumps. After sawing or dicing the wafer to form the chips, the chips are adhered to chip carriers with conductive pads which match the conductive thermoplastic bumps, using heat and pressure. Chips may be easily removed and replaced using heat.
摘要翻译：通过直接芯片附件（DCA）进行卡组装的简单过程使用导电粘合剂。两种方法产生具有一层绝缘热塑性和导电性热塑性凸块的相同的中间晶片产品。在锯切或切割晶片以形成芯片之后，使用热和压力将芯片粘附到具有与导电热塑性凸块相匹配的导电焊盘的芯片载体上。芯片可以很容易地使用热去除和更换。

5. 发明授权

US5048744A Palladium enhanced fluxless soldering and bonding of semiconductor device contacts 失效
标题翻译：钯增强无焊剂焊接和半导体器件触点的接合
公开(公告)号：US5048744A
公开(公告)日：1991-09-17
申请号：US522473
申请日：1990-05-14
申请人： Chin-An Chang , Nicholas G. Koopman , Judith M. Roldan , Steven Strickman , Kamalesh K. Srivastava , Helen L. Yeh
发明人： Chin-An Chang , Nicholas G. Koopman , Judith M. Roldan , Steven Strickman , Kamalesh K. Srivastava , Helen L. Yeh
IPC分类号： B23K35/00 , B23K35/14 , H01L21/60 , H01R43/02 , H05K3/34
CPC分类号： H01L24/81 , B23K35/001 , H01R43/02 , H01L2224/13111 , H01L2224/81801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0105 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H05K3/3436 , H05K3/3457
摘要： The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.
摘要翻译：在包含铜的集成电路触点的还原气氛中，使用200至1500埃厚的钯，在熔融之前抑制氧化铜形成并减少所有氧化物以促进融合期间的润湿，从而增强了在含铜的集成电路触点的还原气氛中的无助焊接。

6. 发明授权

US5225711A Palladium enhanced soldering and bonding of semiconductor device contacts 失效
标题翻译：钯增强了半导体器件触点的焊接和接合
公开(公告)号：US5225711A
公开(公告)日：1993-07-06
申请号：US667489
申请日：1991-03-11
申请人： Chin-An Chang , Nicholas G. Koopman , Judith M. Roldan , Steven Strickman , Kamalesh K. Srivastava , Helen L. Yeh
发明人： Chin-An Chang , Nicholas G. Koopman , Judith M. Roldan , Steven Strickman , Kamalesh K. Srivastava , Helen L. Yeh
IPC分类号： B23K35/00 , H01L21/60 , H01R43/02 , H05K3/34
CPC分类号： H01L24/81 , B23K35/001 , H01R43/02 , H01L2224/13111 , H01L2224/81801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0105 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H05K3/3436 , H05K3/3457
摘要： The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.
摘要翻译：在包含铜的集成电路触点的还原气氛中，使用200至1500埃厚的钯，在熔融之前抑制氧化铜形成并减少所有氧化物以促进融合期间的润湿，从而增强了在含铜的集成电路触点的还原气氛中的无助焊接。

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