专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4538165A FET With heterojunction induced channel 失效
标题翻译： FET异质结诱发通道
公开(公告)号：US4538165A
公开(公告)日：1985-08-27
申请号：US586497
申请日：1984-03-05
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
IPC分类号： H01L29/10 , H01L29/43 , H01L29/778 , H01L29/80 , H01L29/205
CPC分类号： H01L29/432 , H01L29/1029 , H01L29/7783
摘要： The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.
摘要翻译：可以通过提供其中电子与杂质分离的分层结构来增加场效应晶体管的沟道区中载流子的迁移率。通道由宽带隙材料的外层和具有较窄带隙的内层组成，其中一层的导带的底部低于相邻层的价带的顶部。显示了具有AlSb外层和InAs和GaSb内层中的至少一个或两者的层状沟道的结构。

2. 发明授权

US4517047A MBE growth technique for matching superlattices grown on GaAs substrates 失效
标题翻译：用于匹配在GaAs衬底上生长的超晶格的MBE生长技术
公开(公告)号：US4517047A
公开(公告)日：1985-05-14
申请号：US227889
申请日：1981-01-23
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki
IPC分类号： C30B23/02 , C30B25/02 , H01L21/203 , H01L29/15 , H01L33/04 , H01L33/06
CPC分类号： H01L29/155 , B82Y20/00 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L33/04 , H01L33/06 , Y10S438/938
摘要： Misfit dislocation density at an InAs-GaAs interface is reduced in both I-GaSb and In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice.
摘要翻译：通过MBE（分子束外延）生长技术在GaAs衬底上生长的InAs-GaSb和In1-xGaxAs-GaSb1-yAsy超晶格中的InAs-GaAs界面的不匹配位错密度降低，该技术由步骤分级序列的组成层在基质和超晶格之间，其组成在从基底的组成到超晶格的组成的离散浓度步骤中变化。

3. 发明授权

US4371884A InAs-GaSb Tunnel diode 失效
标题翻译： InAs-GaSb隧道二极管
公开(公告)号：US4371884A
公开(公告)日：1983-02-01
申请号：US227890
申请日：1981-01-23
申请人： Leo Esaki , Chin-An Chang
发明人： Leo Esaki , Chin-An Chang
IPC分类号： H01L29/205 , H01L29/885 , H01L29/88
CPC分类号： H01L29/885 , H01L29/205
摘要： Disclosed is a tunnel diode consisting of an accumulation region of p-type GaSb and an accumulation region of n-type InAs separated by a thin layer of a quaternary compound consisting of InGaSbAs. Such a diode structure converts the interface between the two accumulation regions of p-type and n-type material from what would normally be an ohmic junction into a tunneling junction. Such a tunnel diode requires no heavy doping which is normally required for a tunnel diode.
摘要翻译：公开了一种隧道二极管，其由p型GaSb的积聚区域和由由InGaSbAs组成的季铵化合物的薄层分离的n型InAs的蓄积区域组成。这种二极管结构将p型和n型材料的两个积聚区域之间的界面从通常是欧姆结转变成隧道结转变。这种隧道二极管不需要通常需要的隧道二极管的重掺杂。

4. 发明授权

US5635858A Zero-stopping incrementers 失效
标题翻译：零停止增量
公开(公告)号：US5635858A
公开(公告)日：1997-06-03
申请号：US476299
申请日：1995-06-07
申请人： Chin-An Chang , Sang H. Dhong
发明人： Chin-An Chang , Sang H. Dhong
IPC分类号： G06F7/50 , G06F7/505 , H03K19/21
CPC分类号： G06F7/5055
摘要： A zero-stopping incrementer operates on the recognition that half of all digital values that require incrementing will be even numbers; that is, the least significant bit (LSB) is a binary "0". Incrementing such a number merely requires changing the LSB from a binary "0" to a binary "1". For odd numbers (i.e., those where the LSB is a binary "1"), the zero-stopping incrementer searches for the first binary "0" beginning with the LSB. Once found, that binary "0" is changed to a binary "1" and all the binary "1s" preceding it are changed to binary "0s". No change is required to the higher order bits following the first binary "0". This operation is very fast, the worst case being the case when all the binary bits of the number to be incremented are "1s". Nevertheless, the process is significantly increased, especially for 64-bit numbers which are processed by modern superscalar microprocessors. As compared with conventional incrementers using an adder-like scheme, the zero-stopping incrementer is about three times faster with power consumption less than half of the conventional incrementers.
摘要翻译：零停止增量器对识别需要递增的所有数字值的一半将为偶数的操作。也就是说，最低有效位（LSB）是二进制“0”。增加这样的数字只需要将LSB从二进制“0”改变为二进制“1”。对于奇数（即，LSB是二进制“1”的那些），零停止增量器从LSB开始搜索第一个二进制“0”。一旦找到，该二进制“0”被改变为二进制“1”，并且其前面的所有二进制“1”被改变为二进制“0”。在第一个二进制“0”之后的高阶位不需要改变。这个操作是非常快的，最坏的情况就是要增加数字的所有二进制位都是“1s”的情况。然而，该过程显着增加，特别是对于由现代超标量微处理器处理的64位数字。与使用加法器方案的常规增量器相比，零停止增量器的功耗大约是常规加法器的一半的功耗的三倍。

5. 发明授权

US4743951A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US4743951A
公开(公告)日：1988-05-10
申请号：US355942
申请日：1982-03-08
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki , Emilio E. Mendez
IPC分类号： H01L29/778 , H01L29/80
CPC分类号： H01L29/7783
摘要： The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.
摘要翻译：可以通过提供其中电子与杂质分离的分层结构来增加场效应晶体管的沟道区中载流子的迁移率。通道由宽带隙材料的外层和具有较窄带隙的内层组成，其中一层的导带的底部低于相邻层的价带的顶部。显示了具有AlSb外层和InAs和GaSb内层中的至少一个或两者的层状沟道的结构。

6. 发明授权

US4558336A MBE Growth technique for matching superlattices grown on GaAs substrates 失效
标题翻译： MBE生长技术，用于匹配在GaAs衬底上生长的超晶格
公开(公告)号：US4558336A
公开(公告)日：1985-12-10
申请号：US585718
申请日：1984-03-02
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki
IPC分类号： H01L21/203 , H01L29/15 , H01L27/12
CPC分类号： H01L21/02395 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L29/155
摘要： Misfit dislocation density at an InAs-GaAs interface is reduced in both InAs-GaSb and In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattices grown on GaAs substrates by means of an MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice.
摘要翻译：通过MBE（分子束外延）生长技术在GaAs衬底上生长的InAs-GaSb和In1-xGaxAs-GaSb1-yAsy超晶格中的InAs-GaAs界面的失配位错密度降低，该技术由组成层的阶梯级序列在基质和超晶格之间，其组成在从基底的组成到超晶格的组成的离散浓度步骤中变化。

7. 发明授权

US4395722A Heterojunction transistor 失效
标题翻译：异质结晶体管
公开(公告)号：US4395722A
公开(公告)日：1983-07-26
申请号：US198904
申请日：1980-10-21
申请人： Leo Esaki , Chin-An Chang
发明人： Leo Esaki , Chin-An Chang
IPC分类号： H01L29/205 , H01L29/737 , H01L29/88 , H01L29/72
CPC分类号： H01L29/7371 , H01L29/205
摘要： A heterojunction transistor device having emitter and collector regions of a first conductivity type separated by an ultra-thin base region of a second conductivity type. Abrupt heterojunctions are formed which are then heat treated to allow the formation of graded heterojunctions exhibiting rectifying characteristics. Typically, the emitter and collector regions are comprised of GaSb while said base region is comprised of InAs. The band gap of the emitter region is selectively chosen to be relatively wide in comparison to the band gap of the base region. Moreover, the band gap of the emitter and collector regions is substantially equal to the conduction band discontinuity between the emitter and base, and the band gap of the base is substantially equal to the valance band discontinuity and the edge of the conduction band of the base region is substantially coincident with the edge of the valance band of the emitter region. The base region is heavily doped to reduce the base resistance thereby maintaining an injection efficiency close to unity.
摘要翻译：一种异质结晶体管器件，其具有由第二导电类型的超薄基极区域隔开的第一导电类型的发射极和集电极区域。形成突然异质结，然后对其进行热处理，以形成具有整流特性的渐变异质结。通常，发射极和集电极区域由GaSb组成，而所述基极区域由InAs构成。与基极区域的带隙相比，选择性地将发射极区域的带隙选择为相对较宽。此外，发射极和集电极区域的带隙基本上等于发射极和基极之间的导带不连续性，并且基极的带隙基本上等于价带不连续性，并且基极的导带的边缘区域与发射极区域的价带的边缘基本一致。基极区被重掺杂以降低基极电阻，从而保持注入效率接近于一个一致性。

8. 发明授权

US5048744A Palladium enhanced fluxless soldering and bonding of semiconductor device contacts 失效
标题翻译：钯增强无焊剂焊接和半导体器件触点的接合
公开(公告)号：US5048744A
公开(公告)日：1991-09-17
申请号：US522473
申请日：1990-05-14
申请人： Chin-An Chang , Nicholas G. Koopman , Judith M. Roldan , Steven Strickman , Kamalesh K. Srivastava , Helen L. Yeh
发明人： Chin-An Chang , Nicholas G. Koopman , Judith M. Roldan , Steven Strickman , Kamalesh K. Srivastava , Helen L. Yeh
IPC分类号： B23K35/00 , B23K35/14 , H01L21/60 , H01R43/02 , H05K3/34
CPC分类号： H01L24/81 , B23K35/001 , H01R43/02 , H01L2224/13111 , H01L2224/81801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0105 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H05K3/3436 , H05K3/3457
摘要： The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.
摘要翻译：在包含铜的集成电路触点的还原气氛中，使用200至1500埃厚的钯，在熔融之前抑制氧化铜形成并减少所有氧化物以促进融合期间的润湿，从而增强了在含铜的集成电路触点的还原气氛中的无助焊接。

9. 发明授权

US4239584A Molecular-beam epitaxy system and method including hydrogen treatment 失效
标题翻译：分子束外延系统和方法包括氢处理
公开(公告)号：US4239584A
公开(公告)日：1980-12-16
申请号：US947912
申请日：1978-09-29
申请人： Chin-An Chang , Leroy L. Chang , Leo Esaki
发明人： Chin-An Chang , Leroy L. Chang , Leo Esaki
IPC分类号： C30B23/02 , B05D3/06
CPC分类号： C30B23/02 , C30B29/40 , C30B29/42 , Y10S117/906 , Y10S148/06 , Y10S148/169
摘要： A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs and GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam introduced and, along with the molecular beam, is directed on the substrate during the epitaxy growth such that the presence of the relatively small volume of hydrogen influences the physical surface properties of the epitaxially grown material and therefore the quality of the epitaxy.
摘要翻译：一种包括在用于外延生长的分子束蒸发过程中使用氢的系统和方法，例如在形成GaAs和GaAlAs以及用于n型掺杂剂杂质的Sn中。在分子束外延系统中，在外延生长期间引入的氢束和分子束一起被引导到衬底上，使得相对小体积的氢的存在影响外延生长材料的物理表面性质，因此外延的质量。

10. 发明申请

US20110140484A1 Multi-Function Chair 审中-公开
标题翻译：多功能椅
公开(公告)号：US20110140484A1
公开(公告)日：2011-06-16
申请号：US12636350
申请日：2009-12-11
申请人： CHIN AN CHANG
发明人： CHIN AN CHANG
IPC分类号： A47C13/00 , A61H7/00 , A63B21/04
CPC分类号： A47C9/002 , A61H7/004 , A61H2201/0149 , A61H2203/0431 , A61H2205/021 , A61H2205/04 , A61H2205/062 , A63B21/00069 , A63B21/04 , A63B21/0442 , A63B21/0552 , A63B21/152 , A63B21/1609 , A63B22/0605 , A63B22/0694 , A63B23/12 , A63B2071/025 , A63B2208/0233 , A63B2210/02 , A63B2213/00
摘要： A multi-function includes a treadmill, elastic pull ropes for exercise and a massage device which is manually controlled. The treadmill is disposed under a chair seat. When in use, the treadmill is pulled out. When not in use, the treadmill is retracted under the chair. The elastic pull ropes are disposed at two sides of a back pad of the chair to be pulled up and down for the user to do hand exercises. The massage device is disposed behind the back pad of the chair. The massage device has a massage assembly which can be inclined forward to massage the user's head, neck and shoulder. When not in use, the massage assembly is inclined rearward.
摘要翻译：多功能包括跑步机，用于运动的弹力拉绳和手动控制的按摩装置。跑步机设置在椅子座下。在使用中，跑步机被拉出。当不使用时，跑步机在椅子下方缩回。弹性拉绳设置在椅背的两侧，以便上下拉动，以供用户进行手工练习。按摩装置设置在椅背的背后。按摩装置具有可以向前倾斜的按摩组件，以按摩使用者的头部，颈部和肩部。当不使用时，按摩组件向后倾斜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式