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1. 发明申请

WO2015006327A1 WAFER LEVEL PACKAGE SOLDER BARRIER USED AS VACUUM GETTER 审中-公开
标题翻译： WAVER LEVEL PACKAGE SOLDER BARRIER用作真空灭火器
公开(公告)号：WO2015006327A1
公开(公告)日：2015-01-15
申请号：PCT/US2014/045756
申请日：2014-07-08
申请人： RAYTHEON COMPANY
发明人： GOOCH, Roland, W. , DIEP, Buu, Q. , KENNEDY, Adam, M. , BLACK, Stephen, H. , KOCIAN, Thomas, A.
IPC分类号： B81B7/00
CPC分类号： H01L23/10 , B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C2203/035 , H01L21/52 , H01L21/76841 , H01L23/26 , H01L23/49866 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14683 , H01L27/1469 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.
摘要翻译：电子装置及其制造方法。一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片和具有检测器装置和参考装置的装置晶片。在某些实例中，可以将钛材料的阻焊层沉积到盖晶片的表面上。可以进一步激活钛材料的阻焊层作为吸气剂。在各种示例中，盖晶片和器件晶片可以使用焊料接合在一起，并且钛材料的阻焊层可以防止焊料接触盖晶片的表面。

2. 发明申请

WO2012054687A1 INCIDENT RADIATION DETECTOR PACKAGING 审中-公开
标题翻译：偶发辐射探测器包装
公开(公告)号：WO2012054687A1
公开(公告)日：2012-04-26
申请号：PCT/US2011/057021
申请日：2011-10-20
申请人： RAYTHEON COMPANY , GOOCH, Roland, W. , KOCIAN, Thomas, A. , BLACK, Stephen, H. , DIEP, Buu
发明人： GOOCH, Roland, W. , KOCIAN, Thomas, A. , BLACK, Stephen, H. , DIEP, Buu
IPC分类号： H01L27/146 , H01L23/10
CPC分类号： H01L27/14618 , B81B7/0077 , G01J5/045 , H01L23/10 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L27/14683 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05187 , H01L2224/05563 , H01L2224/05582 , H01L2224/05644 , H01L2224/05669 , H01L2224/29011 , H01L2224/29013 , H01L2224/291 , H01L2224/29144 , H01L2224/32225 , H01L2224/83815 , H01L2224/94 , H01L2924/0002 , H01L2924/14 , H01L2924/00 , H01L2924/00014 , H01L2924/01074 , H01L2924/04941 , H01L2924/05341 , H01L2924/014 , H01L2224/83 , H01L2924/0105
摘要： In accordance with particular embodiments, a method for packaging an incident radiation detector includes depositing an opaque solder resistant material on a first surface of a transparent lid substrate configured to cover at least one detector. The method also includes forming at least one cavity in the lid substrate. The method further includes forming a first portion of at least one hermetic seal ring on the opaque solder resistant material. The first portion of each hermetic seal ring surrounds a perimeter of a corresponding cavity in the lid substrate. The method also includes aligning the first portion of the at least one hermetic seal ring with a second portion of the at least one hermetic seal ring. The method additionally includes bonding the first portion of the at least one hermetic seal ring with the second portion of the at least one hermetic seal ring with solder.
摘要翻译：根据具体实施例，一种用于封装入射辐射检测器的方法包括在透明盖基板的第一表面上沉积不透明的阻焊材料，该第一表面被构造成覆盖至少一个检测器。该方法还包括在盖基板中形成至少一个空腔。该方法还包括在不透明的阻焊材料上形成至少一个密封环的第一部分。每个气密密封环的第一部分围绕盖基板中相应空腔的周边。该方法还包括将至少一个密封环的第一部分与至少一个密封环的第二部分对准。该方法还包括用焊料将至少一个气密密封环的第一部分与至少一个密封环的第二部分接合。

3. 发明申请

WO2014031200A1 METHOD OF STRESS RELIEF IN ANTI-REFLECTIVE COATED CAP WAFERS FOR WAFER LEVEL PACKAGED INFRARED FOCAL PLANE ARRAYS 审中-公开
标题翻译：用于水平包装的红外焦平面阵列的抗反射涂层盖子中的应力消除方法
公开(公告)号：WO2014031200A1
公开(公告)日：2014-02-27
申请号：PCT/US2013/042649
申请日：2013-05-24
申请人： RAYTHEON COMPANY
发明人： GOOCH, Roland, W. , DIEP, Buu, Q. , BLACK, Stephen, H. , KOCIAN, Thomas, A. , KENNEDY, Adam, M.
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00325 , B05D5/061 , B81B7/0067 , B81B2201/0207 , B81C2203/0118
摘要： Methods for reducing wafer bow induced by an anti -reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.
摘要翻译：提供了通过盖晶片的防反射涂层引起的减少晶片弓的方法。该方法可以利用其中具有至少一个开口的荫罩，其位于帽晶片中的相对凹陷区域。该方法还可以包括将至少一层抗反射涂层材料通过荫罩沉积到盖晶片的平面侧上，以在平面侧上提供不连续的涂层。

4. 发明申请

WO2004099064A1 ANTI-REFLECTIVE SUB-WAVELENGH STRUCTURES FOR SILICON WAFERS 审中-公开
标题翻译：硅反射反射波浪形结构
公开(公告)号：WO2004099064A1
公开(公告)日：2004-11-18
申请号：PCT/US2004/012088
申请日：2004-04-19
申请人： RAYTHEON COMPANY
发明人： SYLLAIOS, Athanasios, J. , GOOCH, Roland, W. , SCHIMERT, Thomas, R. , MEISSNER, Edward, G.
IPC分类号： B81B7/00
CPC分类号： G02B1/118 , B81B7/00
摘要： Certain MEMS devices require a vacuum environment in order to obtain maximum performance. The vacuum package also provides protection in an optimal operating environment for the MEMS device. Examples of these MEMS devices are infrared MEMS such as bolometers that in addition may require an optically transparent cover, or lid structure. These devices wafer lids are often coated with an anti-reflective coating to reduce the reflectives properties and increase the optical transmission properties of the device wafer lid. Another method for increasing the optical transmission characteristics of a device wafer lid is to provide a method for etching sub wavelenght structures ( i.e. periodic diffraction structures ) on one or both surfaces of a device wafer lid prior to mating a lid wafer with a device wafer.
摘要翻译：某些MEMS器件需要真空环境才能获得最大的性能。真空封装还在MEMS器件的最佳工作环境中提供保护。这些MEMS器件的示例是诸如辐射热计的红外MEMS，其另外可能需要光学透明盖或盖结构。这些装置晶片盖通常涂覆有抗反射涂层以减少反射率特性并增加装置晶片盖的光学透射性能。用于增加器件晶片盖的光学传输特性的另一种方法是提供一种在将盖晶片与器件晶片配合之前，在器件晶片盖的一个或两个表面上蚀刻次波长结构（即，周期性衍射结构）的方法。

5. 发明申请

WO2004099065A1 VACUUM PACKAGE FABRICATION OF INTEGRATED CIRCUIT COMPONENTS 审中-公开
标题翻译：真空包装制造集成电路组件
公开(公告)号：WO2004099065A1
公开(公告)日：2004-11-18
申请号：PCT/US2004/012131
申请日：2004-04-19
申请人： RAYTHEON COMPANY
发明人： SYLLAIOS, Athanasios, J. , GOOCH, Roland, W. , SCHIMERT, Thomas, R.
IPC分类号： B81B7/00
CPC分类号： B81C1/00269
摘要： A method for manufacturing integrated circuit device lids includes creating a lid cavity on the surface of a lid wafer, forming a sealing surface on the lid wafer that surrounds the lid cavity, and forming a trench on the lid wafer between the lid cavity and the sealing surface. The resulting structure uptakes excess sealing surface material and prevents such material from entering the lid cavity.
摘要翻译：集成电路器件盖的制造方法包括在盖晶片的表面上形成盖腔，在盖晶片上形成围绕盖腔的密封面，并且在盖体和盖密封之间形成沟槽表面。所产生的结构吸收多余的密封表面材料并防止这种材料进入盖腔。

6. 发明授权

EP2888196B1 METHOD OF STRESS RELIEF IN ANTI-REFLECTIVE COATED CAP WAFERS FOR WAFER LEVEL PACKAGED INFRARED FOCAL PLANE ARRAYS 有权
公开(公告)号：EP2888196B1
公开(公告)日：2020-03-18
申请号：EP13728067.3
申请日：2013-05-24
申请人： Raytheon Company
发明人： GOOCH, Roland, W. , DIEP, Buu, Q. , BLACK, Stephen, H. , KOCIAN, Thomas, A. , KENNEDY, Adam, M.
IPC分类号： B81C1/00 , B81B7/00

7. 发明授权

EP2630660B1 INCIDENT RADIATION DETECTOR PACKAGING 有权
公开(公告)号：EP2630660B1
公开(公告)日：2018-10-03
申请号：EP11788252.2
申请日：2011-10-20
申请人： Raytheon Company
发明人： GOOCH, Roland, W. , KOCIAN, Thomas, A. , BLACK, Stephen, H. , DIEP, Buu
IPC分类号： H01L27/146 , H01L23/10 , G01J5/04 , B81B7/00
CPC分类号： H01L27/14618 , B81B7/0077 , G01J5/045 , H01L23/10 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L27/14683 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05187 , H01L2224/05563 , H01L2224/05582 , H01L2224/05644 , H01L2224/05669 , H01L2224/29011 , H01L2224/29013 , H01L2224/291 , H01L2224/29144 , H01L2224/32225 , H01L2224/83815 , H01L2224/94 , H01L2924/0002 , H01L2924/14 , H01L2924/00 , H01L2924/00014 , H01L2924/01074 , H01L2924/04941 , H01L2924/05341 , H01L2924/014 , H01L2224/83 , H01L2924/0105
摘要： In accordance with particular embodiments, a method for packaging an incident radiation detector includes depositing an opaque solder resistant material on a first surface of a transparent lid substrate configured to cover at least one detector. The method also includes forming at least one cavity in the lid substrate. The method further includes forming a first portion of at least one hermetic seal ring on the opaque solder resistant material. The first portion of each hermetic seal ring surrounds a perimeter of a corresponding cavity in the lid substrate. The method also includes aligning the first portion of the at least one hermetic seal ring with a second portion of the at least one hermetic seal ring. The method additionally includes bonding the first portion of the at least one hermetic seal ring with the second portion of the at least one hermetic seal ring with solder.

8. 发明授权

EP3019441B1 WAFER LEVEL PACKAGE SOLDER BARRIER USED AS VACUUM GETTER 有权
标题翻译： WAFER LEVEL包装焊剂挡板用作真空吸气剂
公开(公告)号：EP3019441B1
公开(公告)日：2017-08-23
申请号：EP14748016.4
申请日：2014-07-08
申请人： Raytheon Company
发明人： GOOCH, Roland, W. , DIEP, Buu, Q. , KENNEDY, Adam, M. , BLACK, Stephen, H. , KOCIAN, Thomas, A.
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： H01L23/10 , B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C2203/035 , H01L21/52 , H01L21/76841 , H01L23/26 , H01L23/49866 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14683 , H01L27/1469 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.
摘要翻译：电子装置及其制造方法。一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片以及具有检测器装置和参考装置的器件晶片。在某些示例中，钛材料的焊料阻挡层可以被沉积到盖晶片的表面上。钛材料的阻焊层可以进一步被激活以用作吸气剂。在各种示例中，可以使用焊料将盖晶片和器件晶片接合在一起，并且钛材料的焊料阻挡层可以防止焊料接触盖晶片的表面。

9. 发明公开

EP3019441A1 WAFER LEVEL PACKAGE SOLDER BARRIER USED AS VACUUM GETTER 有权
标题翻译：阿尔斯福克斯
公开(公告)号：EP3019441A1
公开(公告)日：2016-05-18
申请号：EP14748016.4
申请日：2014-07-08
申请人： Raytheon Company
发明人： GOOCH, Roland, W. , DIEP, Buu, Q. , KENNEDY, Adam, M. , BLACK, Stephen, H. , KOCIAN, Thomas, A.
IPC分类号： B81B7/00
CPC分类号： H01L23/10 , B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C2203/035 , H01L21/52 , H01L21/76841 , H01L23/26 , H01L23/49866 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14683 , H01L27/1469 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.
摘要翻译：一种电子设备及其制造方法。一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片和具有检测器装置和参考装置的装置晶片。在某些实例中，钛材料的阻焊层可沉积在盖晶片的表面上。可以进一步激活钛材料的阻焊层以用作吸气剂。在各种示例中，盖晶片和器件晶片可以使用焊料接合在一起，并且钛材料的阻焊层可以防止焊料接触盖晶片的表面。

10. 发明公开

EP2888196A1 METHOD OF STRESS RELIEF IN ANTI-REFLECTIVE COATED CAP WAFERS FOR WAFER LEVEL PACKAGED INFRARED FOCAL PLANE ARRAYS 有权
标题翻译：救济问题的晶片到晶片级反反射镀膜CAP·封装红外FOCUS NEWLY阵列
公开(公告)号：EP2888196A1
公开(公告)日：2015-07-01
申请号：EP13728067.3
申请日：2013-05-24
申请人： Raytheon Company
发明人： GOOCH, Roland, W. , DIEP, Buu, Q. , BLACK, Stephen, H. , KOCIAN, Thomas, A. , KENNEDY, Adam, M.
IPC分类号： B81C1/00 , B81B7/00
摘要： Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.

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