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    • 4. 发明授权
    • Synchronous memory having parallel output data paths
    • 具有并行输出数据路径的同步存储器
    • US5402389A
    • 1995-03-28
    • US207513
    • 1994-03-08
    • Stephen T. FlannaganKenneth W. JonesRoger I. Kung
    • Stephen T. FlannaganKenneth W. JonesRoger I. Kung
    • G11C11/413G11C7/10G11C8/00
    • G11C7/106G11C7/1039G11C7/1051G11C7/1072
    • A synchronous memory (20) has parallel data output registers (34) and a dummy path (46). The output data from a memory array (22) is provided to the parallel output registers (34). The output registers (34) provide two parallel, interleaved, output data paths. The data in each path changes every other cycle of a clock signal. Dummy path (46) contains delay elements that model a propagation delay for a data path of the memory (20) during a read cycle. Using parallel data output registers (34) increases a time in which data is valid during the read cycle. The dummy path (46) tracks the output data signal in terms of process, power supply and temperature variations to ensure that the correct data is acquired during the read cycle.
    • 同步存储器(20)具有并行数据输出寄存器(34)和虚拟路径(46)。 来自存储器阵列(22)的输出数据被提供给并行输出寄存器(34)。 输出寄存器(34)提供两个并行的交错输出数据路径。 每个路径中的数据改变时钟信号的每隔一个周期。 虚拟路径(46)包含在读周期期间对存储器(20)的数据路径建立传播延迟的延迟元件。 使用并行数据输出寄存器(34)会增加读取周期数据有效的时间。 伪路径(46)根据过程,电源和温度变化跟踪输出数据信号,以确保在读取周期期间获取正确的数据。
    • 5. 发明授权
    • ECL differential multiplexing circuit
    • ECL差分复用电路
    • US5485110A
    • 1996-01-16
    • US189776
    • 1994-02-01
    • Kenneth W. JonesStephen T. Flannagan
    • Kenneth W. JonesStephen T. Flannagan
    • H03K3/287H03K17/62H03K19/086
    • H03K19/086H03K17/6264H03K3/287
    • An ECL multiplexing circuit (20) includes two differential pairs (21 and 22) for receiving first and second ECL level input signals, emitter-follower output transistors (27 and 28), and a differential pair (31 and 32) for receiving differential clock signals. The differential clock signals control which of the two differential pairs (21 and 22) is coupled to the emitter-follower output transistors (27 and 28). The ECL level input signals that control a logic state of the output signals is determined by the logic state of the clock signals. The ECL multiplexing circuit (20) receives non-overlapping clock signals and is used in a quadrature frequency divide-by-two circuit (40) to divide a frequency of an input clock signal by two.
    • ECL复用电路(20)包括用于接收第一和第二ECL电平输入信号的两个差分对(21和22),射极跟随器输出晶体管(27和28)和用于接收差分时钟的差分对(31和32) 信号。 差分时钟信号控制两个差分对(21和22)中的哪一个耦合到射极跟随器输出晶体管(27和28)。 控制输出信号逻辑状态的ECL电平输入信号由时钟信号的逻辑状态确定。 ECL复用电路(20)接收不重叠的时钟信号,并用于正交频率分频电路(40)中以将输入时钟信号的频率除以2。
    • 6. 发明授权
    • Write control for a memory using a delay locked loop
    • 使用延迟锁定环对内存进行写入控制
    • US5440514A
    • 1995-08-08
    • US207510
    • 1994-03-08
    • Stephen T. FlannaganRay ChangLawrence F. Childs
    • Stephen T. FlannaganRay ChangLawrence F. Childs
    • G11C7/22G11C17/10
    • G11C7/222G11C7/22
    • A memory (20) includes a write control delay locked loop (52) for controlling a write cycle of the memory (20). The delay locked loop (52) includes an arbiter circuit (264), a voltage controlled delay (VCD) circuit (260), and a VCD control circuit (265). The arbiter circuit (264) compares a clock signal to a delayed clock signal from the VCD circuit (260). In response, the arbiter circuit (264) provides a retard signal to the VCD control circuit (265). The VCD control circuit (265) receives the retard signal and adjusts a propagation delay of the delayed clock signal to compensate for changes in the clock frequency, as well as to compensate for process, temperature, and power supply variations.
    • 存储器(20)包括用于控制存储器(20)的写周期的写控制延迟锁定环(52)。 延迟锁定环(52)包括仲裁电路(264),电压控制延迟(VCD)电路(260)和VCD控制电路(265)。 仲裁器电路(264)将时钟信号与来自VCD电路(260)的延迟的时钟信号进行比较。 作为响应,仲裁器电路(264)向VCD控制电路(265)提供延迟信号。 VCD控制电路(265)接收延迟信号并调整延迟的时钟信号的传播延迟以补偿时钟频率的变化,以及补偿处理,温度和电源变化。
    • 7. 发明授权
    • Integrated circuit memory having a fuse detect circuit and method
therefor
    • 具有熔丝检测电路的集成电路存储器及其方法
    • US6157583A
    • 2000-12-05
    • US261876
    • 1999-03-02
    • Glenn E. StarnesStephen T. FlannaganRay Chang
    • Glenn E. StarnesStephen T. FlannaganRay Chang
    • H01L21/82G06F11/00G11C29/02G11C29/04G11C29/44G11C7/00
    • G11C29/02G06F11/006G11C29/44
    • Fuses and detect circuits (124) in an integrated circuit memory (100) include a copper fuse (208) and a fuse state detect stage (202) for detecting the open circuit state or the closed circuit state of the fuse (208). The fuse detect circuit (124) provides an output signal corresponding to the state of the fuse and during detecting, limits a voltage drop across the fuse to an absolute value independent of a power supply voltage applied to the integrated circuit memory. The fuse detect circuit (124) operates at power up of the integrated circuit memory (100) and is disabled after the state of the fuse is detected and latched, and the power supply is sufficient for reliable operation of the integrated circuit memory (100). By limiting the voltage drop across a blown copper fuse (208), a potential electro-migration problem is reduced.
    • 集成电路存储器(100)中的保险丝和检测电路(124)包括用于检测保险丝(208)的开路状态或闭路状态的铜熔丝(208)和熔丝状态检测级(202)。 保险丝检测电路(124)提供对应于熔丝状态的输出信号,并且在检测期间,将熔丝两端的电压降限制为与施加到集成电路存储器的电源电压无关的绝对值。 保险丝检测电路(124)在集成电路存储器(100)上电时工作,并且在保险丝的状态被检测和锁存之后被禁用,并且电源足以用于集成电路存储器(100)的可靠运行, 。 通过限制熔断的铜熔丝(208)上的电压降,潜在的电迁移问题就会降低。
    • 8. 发明授权
    • Layout for noise reduction on a reference voltage
    • 参考电压降噪布局
    • US5670815A
    • 1997-09-23
    • US270560
    • 1994-07-05
    • Lawrence F. ChildsStephen T. FlannaganRay ChangDonovan L. Raatz
    • Lawrence F. ChildsStephen T. FlannaganRay ChangDonovan L. Raatz
    • H01L23/528H01L29/76H01L31/062
    • H01L23/5286H01L2924/0002
    • A layout portion (20) has a first portion (25), and a second portion (55). In the first portion (25), a reference voltage line (27) is disposed between two V.sub.DD power supply lines (26, 30) for a first predetermined length, for providing capacitive coupling between V.sub.DD and a reference voltage. In the second portion (55), the reference voltage line (27) is disposed between two V.sub.SS power supply lines (28, 41) for a second predetermined length, for providing capacitive coupling between V.sub.SS and the reference voltage. The capacitive coupling stabilizes the reference voltage with respect to the power supply voltage, and reduces power supply noise due to lead inductance and changing current demand. In addition, the power supply lines (26, 28, 30, 41) are disposed half above an N-type region (22) and half above a P-type substrate (21) for reducing local transistor switching noise.
    • 布局部分(20)具有第一部分(25)和第二部分(55)。 在第一部分(25)中,在两个VDD电源线(26,30)之间以第一预定长度设置参考电压线(27),用于在VDD和参考电压之间提供电容耦合。 在第二部分(55)中,参考电压线(27)被设置在两个VSS电源线(28,41)之间的第二预定长度上,用于提供VSS与参考电压之间的电容耦合。 电容耦合使参考电压相对于电源电压稳定,并且由于引线电感和电流需求的变化而降低了电源噪声。 此外,电源线(26,28,30,41)在N型区域(22)的上方设置一半,并且在P型衬底(21)的上方设置一半以减少局部晶体管开关噪声。