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1. 发明授权

US08828790B2 Method for local contacting and local doping of a semiconductor layer 有权
标题翻译：局部接触和局部掺杂半导体层的方法
公开(公告)号：US08828790B2
公开(公告)日：2014-09-09
申请号：US13061158
申请日：2009-08-20
申请人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
发明人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
IPC分类号： H01L21/00 , H01L31/18 , H01L21/225 , H01L31/0224
CPC分类号： H01L31/022425 , H01L21/2254 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.
摘要翻译：一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii）在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。在熔融混合物固化之后，在金属层和半导体层之间形成接触。重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。

2. 发明申请

US20110233711A1 METHOD FOR LOCAL CONTACTING AND LOCAL DOPING OF A SEMICONDUCTOR LAYER 有权
标题翻译：用于局部接触和半导体层局部掺杂的方法
公开(公告)号：US20110233711A1
公开(公告)日：2011-09-29
申请号：US13061158
申请日：2009-08-20
申请人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
发明人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
IPC分类号： H01L29/36 , H01L21/24
CPC分类号： H01L31/022425 , H01L21/2254 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.
摘要翻译：一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii）在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。在熔融混合物固化之后，在金属层和半导体层之间形成接触。重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。

3. 发明申请

US20110272020A1 SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL FROM A SILICON SUBSTRATE 审中-公开
标题翻译：太阳能电池和从硅衬底生产太阳能电池的方法
公开(公告)号：US20110272020A1
公开(公告)日：2011-11-10
申请号：US13144531
申请日：2009-12-03
申请人： Daniel Biro , Oliver Schultz-Wittmann , Anke Lemke , Jochen Rentsch , Florian Clement , Marc Hofmann , Andreas Wolf , Luca Gautero , Sebastian Mack , Ralf Preu
发明人： Daniel Biro , Oliver Schultz-Wittmann , Anke Lemke , Jochen Rentsch , Florian Clement , Marc Hofmann , Andreas Wolf , Luca Gautero , Sebastian Mack , Ralf Preu
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/1868 , H01L31/02245 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for producing a solar cell from a silicon wafer, including the following process steps: A) texturizing one side of the silicon substrate (1) for improving the absorption or removing saw damage on one side of the silicon substrate (1); B) generating an emitter area (2) on one side of the silicon substrate (1) by diffusing in a doping material for forming a pn transition; C) removing a glass layer which comprises the doping material; D) applying a masking layer (3) which is a dielectric layer; E) removing one part of the material of the silicon substrate (1); F) applying metal structures (5, 6) for electrically contacting the solar cell. It is significant that thermal oxidation is performed between the process steps E and F for forming an oxide layer (4) and that the masking layer (3) and the oxide layer (4) remain on the silicon substrate (1) in the subsequent process steps.
摘要翻译：一种从硅晶片制造太阳能电池的方法，包括以下工艺步骤：A）使硅衬底（1）的一侧变形，以改善在硅衬底（1）的一侧的吸收或去除锯损坏; B）通过在用于形成pn转变的掺杂材料中扩散而在硅衬底（1）的一侧上产生发射极区域（2） C）去除包含掺杂材料的玻璃层; D）施加作为电介质层的掩模层（3）; E）去除硅衬底（1）的材料的一部分; F）施加用于电接触太阳能电池的金属结构（5,6）。重要的是，在用于形成氧化物层（4）的工艺步骤E和F之间进行热氧化，并且在后续工艺中，掩模层（3）和氧化物层（4）保留在硅衬底（1）上脚步。

4. 发明申请

US20130157401A1 METHOD FOR PRODUCING A SELECTIVE DOPING STRUCTURE IN A SEMICONDUCTOR SUBSTRATE IN ORDER TO PRODUCE A PHOTOVOLTAIC SOLAR CELL 有权
标题翻译：在半导体基板中生产选择性掺杂结构的方法，用于生产光伏太阳能电池
公开(公告)号：US20130157401A1
公开(公告)日：2013-06-20
申请号：US13805111
申请日：2011-06-16
申请人： Ulrich Jäger , Daniel Biro , Anne-Kristin Volk , Johannes Seiffe , Sebastian Mack , Andreas Wolf , Ralf Preu
发明人： Ulrich Jäger , Daniel Biro , Anne-Kristin Volk , Johannes Seiffe , Sebastian Mack , Andreas Wolf , Ralf Preu
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L21/2254 , H01L21/268 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.
摘要翻译：一种用于在半导体衬底中产生选择性掺杂结构的方法，以便产生光伏太阳能电池。该方法包括以下步骤：A）将掺杂层（2）施加到半导体衬底的发射极侧，B）局部加热掺杂层（2）的熔化区域和位于半导体衬底下方的半导体衬底的熔化区域掺杂层（2），使得掺杂剂通过液 - 液扩散从掺杂层（2）扩散到熔融的半导体衬底中，使得在熔融混合物固化后产生高掺杂区域（3），C）产生通过全面加热半导体衬底，平面低掺杂区域，D）去除掺杂层（2），以及E）以掺杂侧的半导体衬底的一部分去除或转换半导体衬底的一部分，靠近表面的高掺杂区域被去除或被转换成不导电的层。

5. 发明授权

US08927317B2 Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell 有权
标题翻译：为了制造光伏太阳能电池，在半导体衬底中制造选择性掺杂结构的方法
公开(公告)号：US08927317B2
公开(公告)日：2015-01-06
申请号：US13805111
申请日：2011-06-16
申请人： Ulrich Jager , Daniel Biro , Anne-Kristin Volk , Johannes Seiffe , Sebastian Mack , Andreas Wolf , Ralf Preu
发明人： Ulrich Jager , Daniel Biro , Anne-Kristin Volk , Johannes Seiffe , Sebastian Mack , Andreas Wolf , Ralf Preu
IPC分类号： H01L31/18 , H01L21/225 , H01L21/268 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/18 , H01L21/2254 , H01L21/268 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.
摘要翻译：一种用于在半导体衬底中产生选择性掺杂结构的方法，以便产生光伏太阳能电池。该方法包括以下步骤：A）将掺杂层（2）施加到半导体衬底的发射极侧，B）局部加热掺杂层（2）的熔化区域和位于半导体衬底下方的半导体衬底的熔化区域掺杂层（2），使得掺杂剂通过液 - 液扩散从掺杂层（2）扩散到熔融的半导体衬底中，使得在熔融混合物固化后产生高掺杂区域（3），C）产生通过全面加热半导体衬底，平面低掺杂区域，D）去除掺杂层（2），以及E）以掺杂侧的半导体衬底的一部分去除或转换半导体衬底的一部分，靠近表面的高掺杂区域被去除或被转换成不导电的层。

6. 发明授权

US09023682B2 Method for producing a photovoltaic solar cell 有权
标题翻译：光伏太阳能电池的制造方法
公开(公告)号：US09023682B2
公开(公告)日：2015-05-05
申请号：US13704683
申请日：2011-06-16
申请人： Sebastian Mack , Ulrich Jager , Andreas Wolf , Daniel Biro , Ralf Preu , Gero Kastner
发明人： Sebastian Mack , Ulrich Jager , Andreas Wolf , Daniel Biro , Ralf Preu , Gero Kastner
IPC分类号： H01L21/00 , H01L31/18 , H01L21/225 , H01L21/268 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/1864 , H01L21/2255 , H01L21/268 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate via thermal oxidation.
摘要翻译：一种光伏太阳能电池的制造方法，包括以下步骤：A.将半导体衬底的前面（2）通过在第一低掺杂区域（4）和第一低掺杂区域（3）内产生第一低掺杂区域（4）和局部高掺杂区域（3），在半导体衬底的前面（2）上产生选择性发射极掺杂，地区; 至少在局部高掺杂区域中至少施加至少一个金属发射极接触结构至少一个金属发射极接触结构，其中在方法步骤B和C之间，相应的氧化硅层（5a，5b））通过热氧化同时在半导体衬底的前后产生在方法步骤B1中。

7. 发明申请

US20130112262A1 PHOTOVOLTAIC SOLAR CELL AND METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL 有权
公开(公告)号：US20130112262A1
公开(公告)日：2013-05-09
申请号：US13810028
申请日：2011-07-11
申请人： Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
发明人： Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/02245 , H01L31/022425 , H01L31/022458 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.

8. 发明申请

US20130095595A1 METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL 有权
标题翻译：生产光伏太阳能电池的方法
公开(公告)号：US20130095595A1
公开(公告)日：2013-04-18
申请号：US13704683
申请日：2011-06-16
申请人： Sebastian Mack , Ulrich Jager , Andreas Wolf , Daniel Biro , Ralf Preu , Gero Kastner
发明人： Sebastian Mack , Ulrich Jager , Andreas Wolf , Daniel Biro , Ralf Preu , Gero Kastner
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L21/2255 , H01L21/268 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate via thermal oxidation.
摘要翻译：一种光伏太阳能电池的制造方法，包括以下步骤：A.将半导体衬底的前面（2）通过在第一低掺杂区域（4）和第一低掺杂区域（3）内产生第一低掺杂区域（4）和局部高掺杂区域（3），在半导体衬底的前面（2）上产生选择性发射极掺杂，地区; 至少在局部高掺杂区域中至少施加至少一个金属发射极接触结构至少一个金属发射极接触结构，其中在方法步骤B和C之间，相应的氧化硅层（5a，5b））通过热氧化同时在半导体衬底的前后产生在方法步骤B1中。

9. 发明授权

US09087940B2 Photovoltaic solar cell and method for producing a photovoltaic solar cell 有权
公开(公告)号：US09087940B2
公开(公告)日：2015-07-21
申请号：US13810028
申请日：2011-07-11
申请人： Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
发明人： Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/02245 , H01L31/022425 , H01L31/022458 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.

10. 发明申请

US20140026936A1 PHOTOVOLTAIC SOLAR CELL AND A METHOD FOR THE PRODUCTION OF SAME 审中-公开
标题翻译：光伏太阳能电池及其制造方法
公开(公告)号：US20140026936A1
公开(公告)日：2014-01-30
申请号：US13982894
申请日：2012-01-26
申请人： Benjamin Thaidigsmann , Florian Clement , Andreas Wolf , Daniel Biro
发明人： Benjamin Thaidigsmann , Florian Clement , Andreas Wolf , Daniel Biro
IPC分类号： H01L31/0224
CPC分类号： H01L31/02245 , H01L27/1421 , H01L31/0682 , Y02E10/547
摘要： A photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy, including at least one base region of a base-doping type, designed in a silicon substrate; at least one emitter region of an emitter-doping type that is of an opposite doping type to the base-doping type; at least one metallic base-contacting structure connected, in an electrically conductive manner, to the base region, and at least one metallic emitter-contacting structure connected, in an electrically conductive manner, to the emitter region, the base region and emitter region being arranged in such a manner that a pn-junction is formed at least in some regions between said base and emitter regions. It is essential that the base-contacting structure overlaps the emitter region in a base-bypass region and that in said overlapping region, a diode-like semiconductor contact is designed between the base-contacting structure and the emitter region, said semiconductor contact being a metal semiconductor contact or as a metal-insulator-semiconductor contact, and/or that the emitter-contacting structure overlaps the base region in an emitter-bypass region and that in this overlapping region, a diode-like semiconductor contact is designed between the emitter-contacting structure and the base region, said semiconductor contact being a metal semiconductor contact or as a metal-insulator-semiconductor contact. The invention also relates to a method for producing a solar cell.
摘要翻译：一种用于将入射的电磁辐射转换为电能的光伏太阳能电池，包括在硅衬底中设计的至少一个基底掺杂类型的基极区域; 与基极掺杂型相反的掺杂类型的发射极掺杂型的至少一个发射极区域; 至少一个金属基底接触结构以导电方式连接到基极区域，以及至少一个金属发射极接触结构，其以导电方式连接到发射极区域，基极区域和发射极区域为以这样的方式布置，使得至少在所述基极和发射极区域之间的一些区域中形成pn结。重要的是，碱接触结构与基极旁路区域中的发射极区域重叠，并且在所述重叠区域中，在基极接触结构和发射极区域之间设计二极管状半导体接触，所述半导体接触是金属半导体接触或/或金属 - 绝缘体 - 半导体接触，和/或发射极接触结构与发射极 - 旁路区域中的基极区域重叠，并且在该重叠区域中，二极管状半导体接触器设计在发射极 - 接触结构和基极区，所述半导体接触是金属半导体接触或金属 - 绝缘体 - 半导体接触。本发明还涉及太阳能电池的制造方法。

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