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1. 发明授权

US08828790B2 Method for local contacting and local doping of a semiconductor layer 有权
标题翻译：局部接触和局部掺杂半导体层的方法
公开(公告)号：US08828790B2
公开(公告)日：2014-09-09
申请号：US13061158
申请日：2009-08-20
申请人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
发明人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
IPC分类号： H01L21/00 , H01L31/18 , H01L21/225 , H01L31/0224
CPC分类号： H01L31/022425 , H01L21/2254 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.
摘要翻译：一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii）在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。在熔融混合物固化之后，在金属层和半导体层之间形成接触。重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。

2. 发明申请

US20110233711A1 METHOD FOR LOCAL CONTACTING AND LOCAL DOPING OF A SEMICONDUCTOR LAYER 有权
标题翻译：用于局部接触和半导体层局部掺杂的方法
公开(公告)号：US20110233711A1
公开(公告)日：2011-09-29
申请号：US13061158
申请日：2009-08-20
申请人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
发明人： Ralf Preu , Andreas Grohe , Daniel Biro , Jochen Rentsch , Marc Hofmann , Jan-Frederik Nekarda , Andreas Wolf
IPC分类号： H01L29/36 , H01L21/24
CPC分类号： H01L31/022425 , H01L21/2254 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.
摘要翻译：一种半导体层的局部接触和局部掺杂的方法，包括以下工艺步骤：A）通过在半导体层的一侧上施加至少一个中间层，在半导体层上产生层结构，以及ii）在步骤i）中最后施加至少一个金属层到中间层上，其中金属层至少部分地覆盖最后施加的中间层，B）层结构的局部加热，使得在局部区域a 形成至少两层以上金属层，中间层和半导体层的至少部分区域的短时熔融混合物。在熔融混合物固化之后，在金属层和半导体层之间形成接触。重要的是，在步骤A）中，i）施加设计为掺杂剂层的至少一个中间层，其包含掺杂剂，其中掺杂剂在半导体层中比金属层的金属具有更大的溶解度。

3. 发明申请

US20090221112A1 Method for Metallizing Semiconductor Elements and Use Thereof 有权
标题翻译：金属化半导体元件及其用途的方法
公开(公告)号：US20090221112A1
公开(公告)日：2009-09-03
申请号：US12399268
申请日：2009-03-06
申请人： Andreas Grohe , Jan-Frederik Nekarda , Oliver Schultz-Wittmann
发明人： Andreas Grohe , Jan-Frederik Nekarda , Oliver Schultz-Wittmann
IPC分类号： H01L21/60
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells.
摘要翻译：本发明涉及一种金属化其中使用铝的半导体元件的方法。特别是在过程成本占很大比例的产品的情况下，例如，基于硅的太阳能电池，本发明可以实现成本优势。此外，本发明涉及该方法的用途，例如在太阳能电池的制造中。

4. 发明授权

US08003530B2 Method for metallizing semiconductor elements and use thereof 有权
标题翻译：金属化半导体元件的方法及其用途
公开(公告)号：US08003530B2
公开(公告)日：2011-08-23
申请号：US12399268
申请日：2009-03-06
申请人： Andreas Grohe , Jan-Frederik Nekarda , Oliver Schultz-Wittmann
发明人： Andreas Grohe , Jan-Frederik Nekarda , Oliver Schultz-Wittmann
IPC分类号： H01L21/44
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells.
摘要翻译：本发明涉及一种金属化其中使用铝的半导体元件的方法。特别是在过程成本占很大比例的产品的情况下，例如，基于硅的太阳能电池，本发明可以实现成本优势。此外，本发明涉及该方法的用途，例如在太阳能电池的制造中。

5. 发明授权

US08586402B2 Method for the precision processing of substrates 失效
标题翻译：基板精密加工方法
公开(公告)号：US08586402B2
公开(公告)日：2013-11-19
申请号：US12530167
申请日：2008-03-06
申请人： Kuno Mayer , Monica Aleman , Daniel Kray , Stefan Glunz , Ansgar Mette , Ralf Preu , Andreas Grohe
发明人： Kuno Mayer , Monica Aleman , Daniel Kray , Stefan Glunz , Ansgar Mette , Ralf Preu , Andreas Grohe
IPC分类号： H01L21/00
CPC分类号： C23C18/1612 , C23C18/1667 , C23C18/36 , C25D5/024 , C25D7/123 , C25D7/126 , H01L21/31111 , H01L31/18
摘要： The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.
摘要翻译：本发明涉及一种用于基板的精密加工的方法，特别是用于薄层的微结构化，局部掺杂物引入以及局部施加金属成核层的方法，其中液体辅助激光，即基板的激光照射被覆盖在要由适当的反应液体处理的区域中。

6. 发明申请

US20100144079A1 METHOD FOR THE PRECISION PROCESSING OF SUBSTRATES 失效
标题翻译：基板精密加工方法
公开(公告)号：US20100144079A1
公开(公告)日：2010-06-10
申请号：US12530167
申请日：2008-03-06
申请人： Kuno Mayer , Monica Aleman , Daniel Kray , Stefan Glunz , Ansgar Mette , Ralf Preu , Andreas Grohe
发明人： Kuno Mayer , Monica Aleman , Daniel Kray , Stefan Glunz , Ansgar Mette , Ralf Preu , Andreas Grohe
IPC分类号： H01L31/18 , H01L21/38
CPC分类号： C23C18/1612 , C23C18/1667 , C23C18/36 , C25D5/024 , C25D7/123 , C25D7/126 , H01L21/31111 , H01L31/18
摘要： The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.
摘要翻译：本发明涉及一种用于基板的精密加工的方法，特别是用于薄层的微结构化，局部掺杂物引入以及局部施加金属成核层的方法，其中液体辅助激光，即基板的激光照射被覆盖在要由适当的反应液体处理的区域中。

7. 发明申请

US20100301456A1 METHOD FOR APPLYING A STRUCTURE TO A SEMICONDUCTOR ELEMENT 失效
标题翻译：将结构应用于半导体元件的方法
公开(公告)号：US20100301456A1
公开(公告)日：2010-12-02
申请号：US12446804
申请日：2007-12-20
申请人： Oliver Schultz-Wittmann , Filip Granek , Andreas Grohe
发明人： Oliver Schultz-Wittmann , Filip Granek , Andreas Grohe
IPC分类号： H01L23/48 , H01L21/027
CPC分类号： H01L31/022425 , H01L21/0272 , H01L21/7688 , Y02E10/50
摘要： A method for applying a predetermined structure of a structural material to a semiconductor element. The method includes the following steps: A) partially covering a surface of the semiconductor element with a masking layer, B) applying a film of a structural material to the masking layer and to the surface of the semiconductor element in the zones that are devoid of the masking layer and C) removing the masking layer together with the structural material present on the masking layer. The method according to the invention provides that between process steps B and C, the film of structural material is partially removed in a process step B2.
摘要翻译：一种将结构材料的预定结构施加到半导体元件的方法。该方法包括以下步骤：A）用掩模层部分地覆盖半导体元件的表面，B）在缺少该掩模层的区域中的掩模层和半导体元件的表面上施加结构材料的膜掩蔽层和C）与掩蔽层上存在的结构材料一起去除掩模层。根据本发明的方法提供了在工艺步骤B和C之间，在工艺步骤B2中部分地除去结构材料的膜。

8. 发明授权

US08236689B2 Method for applying a structure to a semiconductor element 失效
标题翻译：将结构施加到半导体元件的方法
公开(公告)号：US08236689B2
公开(公告)日：2012-08-07
申请号：US12446804
申请日：2007-12-20
申请人： Oliver Schultz-Wittmann , Filip Granek , Andreas Grohe
发明人： Oliver Schultz-Wittmann , Filip Granek , Andreas Grohe
IPC分类号： H01L21/441
CPC分类号： H01L31/022425 , H01L21/0272 , H01L21/7688 , Y02E10/50
摘要： A method for applying a predetermined structure of a structural material to a semiconductor element. The method includes the following steps: A) partially covering a surface of the semiconductor element with a masking layer, B) applying a film of a structural material to the masking layer and to the surface of the semiconductor element in the zones that are devoid of the masking layer and C) removing the masking layer together with the structural material present on the masking layer. The method according to the invention provides that between process steps B and C, the film of structural material is partially removed in a process step B2.
摘要翻译：一种将结构材料的预定结构施加到半导体元件的方法。该方法包括以下步骤：A）用掩模层部分地覆盖半导体元件的表面，B）在缺少该掩模层的区域中的掩模层和半导体元件的表面上施加结构材料的膜掩蔽层和C）与掩蔽层上存在的结构材料一起去除掩模层。根据本发明的方法提供了在工艺步骤B和C之间，在工艺步骤B2中部分地除去结构材料的膜。

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