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1. 发明申请

US20090221112A1 Method for Metallizing Semiconductor Elements and Use Thereof 有权
标题翻译：金属化半导体元件及其用途的方法
公开(公告)号：US20090221112A1
公开(公告)日：2009-09-03
申请号：US12399268
申请日：2009-03-06
申请人： Andreas Grohe , Jan-Frederik Nekarda , Oliver Schultz-Wittmann
发明人： Andreas Grohe , Jan-Frederik Nekarda , Oliver Schultz-Wittmann
IPC分类号： H01L21/60
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells.
摘要翻译：本发明涉及一种金属化其中使用铝的半导体元件的方法。特别是在过程成本占很大比例的产品的情况下，例如，基于硅的太阳能电池，本发明可以实现成本优势。此外，本发明涉及该方法的用途，例如在太阳能电池的制造中。

2. 发明授权

US08003530B2 Method for metallizing semiconductor elements and use thereof 有权
标题翻译：金属化半导体元件的方法及其用途
公开(公告)号：US08003530B2
公开(公告)日：2011-08-23
申请号：US12399268
申请日：2009-03-06
申请人： Andreas Grohe , Jan-Frederik Nekarda , Oliver Schultz-Wittmann
发明人： Andreas Grohe , Jan-Frederik Nekarda , Oliver Schultz-Wittmann
IPC分类号： H01L21/44
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The present invention relates to a method for metallizing semiconductor components in which aluminium is used. In particular in the case of products in which the process costs play a big part, such as e.g. solar cells based on silicon, a cost advantage can be achieved with the invention. In addition, the present invention relates to the use of the method, for example in the production of solar cells.
摘要翻译：本发明涉及一种金属化其中使用铝的半导体元件的方法。特别是在过程成本占很大比例的产品的情况下，例如，基于硅的太阳能电池，本发明可以实现成本优势。此外，本发明涉及该方法的用途，例如在太阳能电池的制造中。

3. 发明申请

US20100301456A1 METHOD FOR APPLYING A STRUCTURE TO A SEMICONDUCTOR ELEMENT 失效
标题翻译：将结构应用于半导体元件的方法
公开(公告)号：US20100301456A1
公开(公告)日：2010-12-02
申请号：US12446804
申请日：2007-12-20
申请人： Oliver Schultz-Wittmann , Filip Granek , Andreas Grohe
发明人： Oliver Schultz-Wittmann , Filip Granek , Andreas Grohe
IPC分类号： H01L23/48 , H01L21/027
CPC分类号： H01L31/022425 , H01L21/0272 , H01L21/7688 , Y02E10/50
摘要： A method for applying a predetermined structure of a structural material to a semiconductor element. The method includes the following steps: A) partially covering a surface of the semiconductor element with a masking layer, B) applying a film of a structural material to the masking layer and to the surface of the semiconductor element in the zones that are devoid of the masking layer and C) removing the masking layer together with the structural material present on the masking layer. The method according to the invention provides that between process steps B and C, the film of structural material is partially removed in a process step B2.
摘要翻译：一种将结构材料的预定结构施加到半导体元件的方法。该方法包括以下步骤：A）用掩模层部分地覆盖半导体元件的表面，B）在缺少该掩模层的区域中的掩模层和半导体元件的表面上施加结构材料的膜掩蔽层和C）与掩蔽层上存在的结构材料一起去除掩模层。根据本发明的方法提供了在工艺步骤B和C之间，在工艺步骤B2中部分地除去结构材料的膜。

4. 发明授权

US08236689B2 Method for applying a structure to a semiconductor element 失效
标题翻译：将结构施加到半导体元件的方法
公开(公告)号：US08236689B2
公开(公告)日：2012-08-07
申请号：US12446804
申请日：2007-12-20
申请人： Oliver Schultz-Wittmann , Filip Granek , Andreas Grohe
发明人： Oliver Schultz-Wittmann , Filip Granek , Andreas Grohe
IPC分类号： H01L21/441
CPC分类号： H01L31/022425 , H01L21/0272 , H01L21/7688 , Y02E10/50
摘要： A method for applying a predetermined structure of a structural material to a semiconductor element. The method includes the following steps: A) partially covering a surface of the semiconductor element with a masking layer, B) applying a film of a structural material to the masking layer and to the surface of the semiconductor element in the zones that are devoid of the masking layer and C) removing the masking layer together with the structural material present on the masking layer. The method according to the invention provides that between process steps B and C, the film of structural material is partially removed in a process step B2.
摘要翻译：一种将结构材料的预定结构施加到半导体元件的方法。该方法包括以下步骤：A）用掩模层部分地覆盖半导体元件的表面，B）在缺少该掩模层的区域中的掩模层和半导体元件的表面上施加结构材料的膜掩蔽层和C）与掩蔽层上存在的结构材料一起去除掩模层。根据本发明的方法提供了在工艺步骤B和C之间，在工艺步骤B2中部分地除去结构材料的膜。

5. 发明申请

US20110272020A1 SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL FROM A SILICON SUBSTRATE 审中-公开
标题翻译：太阳能电池和从硅衬底生产太阳能电池的方法
公开(公告)号：US20110272020A1
公开(公告)日：2011-11-10
申请号：US13144531
申请日：2009-12-03
申请人： Daniel Biro , Oliver Schultz-Wittmann , Anke Lemke , Jochen Rentsch , Florian Clement , Marc Hofmann , Andreas Wolf , Luca Gautero , Sebastian Mack , Ralf Preu
发明人： Daniel Biro , Oliver Schultz-Wittmann , Anke Lemke , Jochen Rentsch , Florian Clement , Marc Hofmann , Andreas Wolf , Luca Gautero , Sebastian Mack , Ralf Preu
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/1868 , H01L31/02245 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for producing a solar cell from a silicon wafer, including the following process steps: A) texturizing one side of the silicon substrate (1) for improving the absorption or removing saw damage on one side of the silicon substrate (1); B) generating an emitter area (2) on one side of the silicon substrate (1) by diffusing in a doping material for forming a pn transition; C) removing a glass layer which comprises the doping material; D) applying a masking layer (3) which is a dielectric layer; E) removing one part of the material of the silicon substrate (1); F) applying metal structures (5, 6) for electrically contacting the solar cell. It is significant that thermal oxidation is performed between the process steps E and F for forming an oxide layer (4) and that the masking layer (3) and the oxide layer (4) remain on the silicon substrate (1) in the subsequent process steps.
摘要翻译：一种从硅晶片制造太阳能电池的方法，包括以下工艺步骤：A）使硅衬底（1）的一侧变形，以改善在硅衬底（1）的一侧的吸收或去除锯损坏; B）通过在用于形成pn转变的掺杂材料中扩散而在硅衬底（1）的一侧上产生发射极区域（2） C）去除包含掺杂材料的玻璃层; D）施加作为电介质层的掩模层（3）; E）去除硅衬底（1）的材料的一部分; F）施加用于电接触太阳能电池的金属结构（5,6）。重要的是，在用于形成氧化物层（4）的工艺步骤E和F之间进行热氧化，并且在后续工艺中，掩模层（3）和氧化物层（4）保留在硅衬底（1）上脚步。

6. 发明授权

US09130074B2 High-efficiency solar cell structures and methods of manufacture 有权
标题翻译：高效太阳能电池结构及制造方法
公开(公告)号：US09130074B2
公开(公告)日：2015-09-08
申请号：US13265462
申请日：2010-04-21
申请人： Oliver Schultz-Wittmann , Denis DeCeuster
发明人： Oliver Schultz-Wittmann , Denis DeCeuster
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022466 , H01L31/0463 , H01L31/1864 , H01L31/1868 , H01L31/1872 , H01L31/1884 , Y02E10/50 , Y02P70/521
摘要： Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.
摘要翻译：公开了不同组成的太阳能电池，通常包括中心衬底，导电层，抗反射层，钝化层和/或电极。多功能层提供钝化，透明度，垂直载体流动的足够导电性，结和/或不同程度的抗反射性的组合功能。还公开了改进的制造方法，包括单面CVD沉积工艺和用于层形成和/或转化的热处理。

7. 发明授权

US08236604B2 Fine line metallization of photovoltaic devices by partial lift-off of optical coatings 有权
标题翻译：通过光学涂层的部分剥离对光伏器件进行细线金属化
公开(公告)号：US08236604B2
公开(公告)日：2012-08-07
申请号：US13027576
申请日：2011-02-15
申请人： Oliver Schultz-Wittmann , Douglas Crafts , Denis DeCeuster , Adrian Turner
发明人： Oliver Schultz-Wittmann , Douglas Crafts , Denis DeCeuster , Adrian Turner
IPC分类号： H01L21/28
CPC分类号： H01L31/022425 , H01L31/02168 , Y02E10/50
摘要： A metal grid contact and dielectric pattern on a layer requiring conductive contact in a photovoltaic device. The invention includes, in one aspect, forming a metal film; forming an etch resist over the metal film by, e.g., directly writing and in-situ curing the etch resist using, e.g., ink-jetting or screen-printing; etching the metal film leaving the resist pattern and a metal grid contact pattern under the etch resist intact; forming a dielectric layer over the etch resist; and removing the resist pattern and the dielectric over the etch resist, leaving a substantially co-planar metal grid contact and dielectric pattern. The metal grid contact pattern may form the front and/or back contact electrode of a solar cell; and the dielectric layer may be an optical reflection or antireflection layer. The layer requiring contact may be multifunctional providing its own passivation, such that passivation is substantially not required in the dielectric layer.
摘要翻译：在光伏器件中需要导电接触的层上的金属栅极接触和电介质图案。本发明在一个方面包括形成金属膜; 通过例如使用例如喷墨或丝网印刷直接写入和原位固化蚀刻抗蚀剂，在金属膜上形成蚀刻抗蚀剂; 蚀刻离开抗蚀剂图案的金属膜和蚀刻抗蚀剂下方的金属栅格接触图案完整; 在所述抗蚀剂上形成介电层; 并且在抗蚀剂上去除抗蚀剂图案和电介质，留下基本上共平面的金属栅极接触和电介质图案。金属栅格接触图案可以形成太阳能电池的前和/或后接触电极; 并且电介质层可以是光学反射或抗反射层。需要接触的层可以是多功能的，提供其自身的钝化，使得在介电层中基本上不需要钝化。

8. 发明申请

US20110155239A1 SOLAR CELL AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：太阳能电池及其生产方法
公开(公告)号：US20110155239A1
公开(公告)日：2011-06-30
申请号：US12997623
申请日：2009-05-29
申请人： Daniel Biro , Florian Clement , Oliver Schultz-Wittmann
发明人： Daniel Biro , Florian Clement , Oliver Schultz-Wittmann
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/02245 , H01L31/0504 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell having a semiconductor substrate with a front face and a rear face extending substantially parallel thereto, a front face metallization, a rear face metallization and at least three doped regions having at least two different conductivity types, including: a first doped region with a first conductivity type located on the front face of the semiconductor substrate and extends substantially over the entire front face; a second doped region with the opposite conductivity type to that of the first conductivity type located on the rear face and extends partially over said face; and a third doped region with the first conductivity type located on the rear face and extends partially over said face. The front face metallization is connected to the first doped region and the rear face metallization is connected to the second doped region in an electrically conductive manner and the solar cell has an electrically conductive connection which connects the third doped region to the front face metallization and/or the first doped region.
摘要翻译：一种具有半导体衬底的太阳能电池，其具有基本上平行于其的前表面和后表面，前表面金属化，背面金属化和至少三个具有至少两种不同导电类型的掺杂区域，包括：具有第一导电类型位于半导体衬底的前表面上并且基本上在整个正面上延伸; 第二掺杂区域，其具有与位于后表面上的第一导电类型相反的导电类型并且部分地延伸在所述面上; 以及具有第一导电类型的第三掺杂区域位于后表面上并且部分地在所述面上延伸。前面金属化连接到第一掺杂区域，并且背面金属化以导电方式连接到第二掺杂区域，并且太阳能电池具有导电连接，其将第三掺杂区域连接到前面金属化和/ 或第一掺杂区域。

9. 发明授权

US09564542B2 Selective transformation in functional films, and solar cell applications thereof 有权
标题翻译：功能膜中的选择性转化及其太阳能电池的应用
公开(公告)号：US09564542B2
公开(公告)日：2017-02-07
申请号：US13496555
申请日：2010-09-17
申请人： Adrian Bruce Turner , Oliver Schultz-Wittmann , Denis De Ceuster , Douglas E. Crafts
发明人： Adrian Bruce Turner , Oliver Schultz-Wittmann , Denis De Ceuster , Douglas E. Crafts
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/02168 , H01L31/1864 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.
摘要翻译：一种在掺杂半导体的表面上具有第一膜和阻挡膜的太阳能电池形成方法和所得到的结构，其中第一膜的光学和/或电学性质原位转化，使得得到的转化膜为更适合太阳能电池的高效运行; 其中所述阻挡膜的部分部分地覆盖所述第一膜并且基本上防止所述阻挡膜的所述部分下方的第一膜区域的变换。

10. 发明申请

US20120152299A1 Solar Cell And Solar Cell Module With Improved Read-Side Electrodes, And Production Method 审中-公开
标题翻译：具有改进的阅读侧电极的太阳能电池和太阳能电池模块以及生产方法
公开(公告)号：US20120152299A1
公开(公告)日：2012-06-21
申请号：US12513217
申请日：2007-10-31
申请人： Oliver Schultz-Wittmann , Stefan Glunz , Martin Hermle
发明人： Oliver Schultz-Wittmann , Stefan Glunz , Martin Hermle
IPC分类号： H01L31/05 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/022441 , H01L31/0516 , Y02E10/50
摘要： The present invention relates to rear-side contact solar cells and also solar cell modules manufactured therefrom, said modules having a special electrode structure, and also to a method for the production thereof. The electrodes, via which the current of the rear-side contact cell is tapped, are thereby separated by an insulating layer from the finger contacts which are in contact with the n- or p-semiconductor element of the solar cell through an insulating layer. The method makes possible a substantial simplification relative to the production methods described in the state of the art by means of spatial decoupling of the structuring of the electrodes from the solar cell.
摘要翻译：本发明涉及背面接触太阳能电池及其制造的太阳能电池模块，所述模块具有特殊的电极结构，以及其制造方法。通过绝缘层将背面接触电池的电流从电极分离出来的手指触点与太阳能电池的n型半导体元件或p型半导体元件接触。相对于现有技术中描述的生产方法，通过电极结构与太阳能电池的空间去耦，该方法可以大大简化。

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