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1. 发明授权

US08317968B2 Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing 有权
标题翻译：包括用于等离子体处理的气体分配构件供应工艺气体和射频（RF）功率的装置
公开(公告)号：US08317968B2
公开(公告)日：2012-11-27
申请号：US10835456
申请日：2004-04-30
申请人： Rajinder Dhindsa , Eric Lenz
发明人： Rajinder Dhindsa , Eric Lenz
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J21/36 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32724 , H01L21/306
摘要： A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.
摘要翻译：一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。气体分配构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。

2. 发明申请

US20090174983A1 ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME 有权
标题翻译：具有变化厚度，型材和/或形状的电介质材料和/或空腔的静电块组件，使用方法和装置
公开(公告)号：US20090174983A1
公开(公告)日：2009-07-09
申请号：US12405906
申请日：2009-03-17
申请人： Rajinder Dhindsa , Eric Lenz , Lumin Li , Felix Kozakevich
发明人： Rajinder Dhindsa , Eric Lenz , Lumin Li , Felix Kozakevich
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.
摘要翻译：公开了具有介电材料和/或具有变化的厚度，型材和/或形状的空腔的静电卡盘组件。静电卡盘组件包括导电支架和静电卡盘陶瓷层。电介质层或插入件位于导电支架和静电卡盘陶瓷层之间。空腔位于静电卡盘陶瓷层的座面上。可以可选地将嵌入式极图案并入静电卡盘组件中。公开了制造静电卡盘组件的方法，是在等离子体处理过程中改进工件上方的磁通场的均匀性的方法。

3. 发明申请

US20080006205A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20080006205A1
公开(公告)日：2008-01-10
申请号：US11456545
申请日：2006-07-10
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。上电极设置在下电极的上方，并与腔电隔离。电压源连接到上电极。电压源被定义为控制上电极相对于腔室的电位。由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

4. 发明授权

US06245192B1 Gas distribution apparatus for semiconductor processing 有权
标题翻译：用于半导体加工的气体分配装置
公开(公告)号：US06245192B1
公开(公告)日：2001-06-12
申请号：US09343690
申请日：1999-06-30
申请人： Rajinder Dhindsa , Fangli Hao , Eric Lenz
发明人： Rajinder Dhindsa , Fangli Hao , Eric Lenz
IPC分类号： C23F102
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , H01J37/3244
摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.
摘要翻译：一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。气体分配系统包括固定在一起以在其间限定气体分配室的支撑板和喷头。包括一个或多个挡板的挡板组件位于气体分配室内。挡板装置包括向挡板室的中心部分供应处理气体的第一气体供应源和向挡板室的周边区域供应第二处理气体的第二气体供应源。因为在靠近第一和第二气体供应出口的位置处气体的压力较大，所以喷头背面的气体压力可以比单个气体供应的情况更均匀。在一种布置中，第一和第二气体供应开放在顶部挡板和温度控制的支撑构件之间的增压室中，其中气室通过O形环分成中心区域和外围区域。在第二种布置中，第一气体供应通向上挡板上方的中心区域，第二气体供应通道进入上挡板和下挡板之间的集气室的周边。

5. 发明申请

US20110024046A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024046A1
公开(公告)日：2011-02-03
申请号：US12905046
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。下电极也被限定为支持暴露于等离子体的半导体晶片。上电极设置在下电极的上方并与之隔开的关系。上电极由掺杂的半导体材料限定。上电极内的掺杂浓度从上电极的中心向周边径向变化。上电极的电位影响室内等离子体的电位。

6. 发明授权

US07393432B2 RF ground switch for plasma processing system 有权
标题翻译：射频接地开关等离子体处理系统
公开(公告)号：US07393432B2
公开(公告)日：2008-07-01
申请号：US10953229
申请日：2004-09-29
申请人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
发明人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32568
摘要： An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.
摘要翻译：等离子体处理系统中的布置，用于选择性地提供电极和地面之间的RF接地路径。该装置包括RF传导路径结构和环形结构。环形结构和RF传导路径结构具有相对于彼此的两个相对位置。两个相对位置的第一相对位置的特征在于环形结构与RF传导路径结构电耦合以提供到RF传导路径结构的接地。两个相对位置的第二相对位置的特征在于环形结构与RF传导路径电耦合。

7. 发明授权

US06391787B1 Stepped upper electrode for plasma processing uniformity 有权
公开(公告)号：US06391787B1
公开(公告)日：2002-05-21
申请号：US09689845
申请日：2000-10-13
申请人： Rajinder Dhindsa , Mukund Srinivasan , Aaron Eppler , Eric Lenz
发明人： Rajinder Dhindsa , Mukund Srinivasan , Aaron Eppler , Eric Lenz
IPC分类号： H01L2120
CPC分类号： H01J37/32009 , H01J37/3244 , Y10T156/10
摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

8. 发明授权

US09111724B2 Apparatus and method for controlling plasma potential 有权
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US09111724B2
公开(公告)日：2015-08-18
申请号：US12905041
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01J7/24 , C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
摘要翻译：腔室包括下电极和上电极。下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。上电极设置在下电极的上方并与之隔开的关系。上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。上部电极的相邻部分通过电介质材料彼此电分离。多个电压源分别连接到上电极部分。每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。每个上电极部分的电位影响室内的等离子体的电位。

9. 发明授权

US08846539B2 Apparatus including showerhead electrode and heater for plasma processing 有权
标题翻译：装置包括用于等离子体处理的喷头电极和加热器
公开(公告)号：US08846539B2
公开(公告)日：2014-09-30
申请号：US12709892
申请日：2010-02-22
申请人： Rajinder Dhindsa , Eric Lenz
发明人： Rajinder Dhindsa , Eric Lenz
IPC分类号： H01L21/302 , B44C1/22 , H01J37/32
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/3244 , H01J37/32724
摘要： A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.
摘要翻译：等离子体处理装置包括与喷头电极热接触的加热器和与加热器热接触的温度控制的顶板，以在半导体衬底处理期间保持喷头电极的期望温度。气体分配构件向喷头电极提供处理气体和射频（RF）功率。

10. 发明申请

US20110024045A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024045A1
公开(公告)日：2011-02-03
申请号：US12905041
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
摘要翻译：腔室包括下电极和上电极。下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。上电极设置在下电极的上方并与之隔开的关系。上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。上部电极的相邻部分通过电介质材料彼此电分离。多个电压源分别连接到上电极部分。每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。每个上电极部分的电位影响室内的等离子体的电位。

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