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    • 4. 发明授权
    • Method for modifying a C4 semiconductor device
    • 修改C4半导体器件的方法
    • US06468917B1
    • 2002-10-22
    • US09502916
    • 2000-02-10
    • Susan Xia LiArnold LouieMaria Guardado
    • Susan Xia LiArnold LouieMaria Guardado
    • H01L21302
    • H01L24/81H01L21/76892H01L24/11H01L2224/13099H01L2224/81801H01L2924/00014H01L2924/01005H01L2924/01006H01L2924/01018H01L2924/01033H01L2924/01074H01L2924/014H01L2924/15312H01L2224/0401
    • The present invention provides a method for modifying a C4 device, the device including a circuit, a polyimide layer, and a plurality of solder bumps in the active region of the C4 device. The method includes removing the polyimide layer using a plasma etch, the plasma etch comprising a mixture of oxygen and an inert gas; modifying the circuit; and cleaning the modified C4 device with a reactive flux. By mixing the oxygen with an inert gas, the oxidation of the solder bumps due to the plasma etch are reduced. Because the top layer features are now readily visible, circuit structures are more easily located, and modification can be more easily performed and with more accuracy. In the preferred embodiment, the device is then cleaned with a reactive flux, which removes any oxidation layer which has formed on the solder bumps. In this manner, circuit modification may be performed more quickly while also minimizing the oxidation of the solder bumps. The reduced oxidation of the solder bumps will help the C4 packaging process to be successful for electrical testing after focused beam ion (FIB) modification. Also, since the costly FIB process is not required to locally remove the polyimide layer for locating circuit structures, the cost of device fabrication is reduced.
    • 本发明提供一种在C4器件的有源区中修改C4器件的方法,该器件包括电路,聚酰亚胺层和多个焊料凸块。 该方法包括使用等离子体蚀刻去除聚酰亚胺层,等离子体蚀刻包括氧和惰性气体的混合物; 修改电路; 并用反应通量清洗改性的C4装置。 通过将氧气与惰性气体混合,由于等离子体蚀刻引起的焊料凸块的氧化降低。 因为顶层特征现在容易可见,电路结构更容易定位,并且可以更准确地进行修改。 在优选实施例中,然后用反应性焊剂清洁器件,其去除在焊料凸块上形成的任何氧化层。 以这种方式,可以更快地执行电路修改,同时还使焊料凸块的氧化最小化。 焊料凸块的减少的氧化将有助于C4封装工艺在聚焦光束离子(FIB)修改后的电气测试中成功。 此外,由于不需要昂贵的FIB工艺来局部去除用于定位电路结构的聚酰亚胺层,因此减少了器件制造的成本。