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    • 1. 发明授权
    • Programmable memory access parameters
    • 可编程存储器访问参数
    • US07236411B1
    • 2007-06-26
    • US11187356
    • 2005-07-21
    • Rahul SainiChangsong ZhangDavid E. Jefferson
    • Rahul SainiChangsong ZhangDavid E. Jefferson
    • G11C7/00
    • G11C7/22G06F17/5054G11C7/222
    • A programmable device can configure memory access parameters to optimize the performance of one or more of its memory units. A memory unit includes one or more programmable delay units connected with clock, control and/or data signals. The configuration data of the programmable device specifies delay values for each programmable delay unit. A programmable delay unit includes at least two signal paths having different timing characteristics. A switching circuit controlled by configuration data is used to select one of the signal paths as the output of the programmable delay unit. Programmable delay units can be connected in series or in parallel to increase the number of possible delays and/or to specify timing parameters of portions of the memory unit in absolute or relative terms. Programmable delay units can be used to vary the timing characteristics of the memory unit and to control the voltage split used to read data.
    • 可编程设备可以配置存储器访问参数以优化其一个或多个存储器单元的性能。 存储器单元包括与时钟,控制和/或数据信号连接的一个或多个可编程延迟单元。 可编程设备的配置数据指定每个可编程延迟单元的延迟值。 可编程延迟单元包括具有不同定时特性的至少两个信号路径。 由配置数据控制的开关电路用于选择一个信号路径作为可编程延迟单元的输出。 可编程延迟单元可以串联或并联连接以增加可能的延迟的数量和/或以绝对或相对的方式指定存储器单元的部分的定时参数。 可编程延迟单元可用于改变存储器单元的定时特性并控制用于读取数据的电压分配。
    • 4. 发明授权
    • Programmable logic with on-chip DLL or PLL to distribute clock
    • 具有片内DLL或PLL的可编程逻辑来分配时钟
    • US06292016B1
    • 2001-09-18
    • US09588034
    • 2000-06-05
    • David E. JeffersonL. Todd CopeSrinivas ReddyRichard G. Cliff
    • David E. JeffersonL. Todd CopeSrinivas ReddyRichard G. Cliff
    • G03F738
    • H03K19/1774G06F1/10H03K19/17732H03L7/0814H03L7/087
    • A programmable logic device or field programmable gate array includes an on-chip clock synchronization circuit to synchronize a reference or system clock signal. The clock synchronization circuit is a delay-locked loop (DLL) circuit in one implementation and a phase locked loop (PLL) circuit in another implementation. The DLL or PLL circuits may be analog or digital. The clock synchronization circuit generates a synchronized clock signal that is distributed throughout the programmable integrated circuit. The synchronized clock signal is programmably connected to the programmable logic elements or logic array blocks (LABs) of the integrated circuit. The clock synchronization circuit reduces or minimizes clock skew when distributing a clock signal within the integrated circuit. The clock synchronization circuit improves the overall performance of the programmable logic integrated circuit.
    • 可编程逻辑器件或现场可编程门阵列包括片上时钟同步电路以同步参考或系统时钟信号。 时钟同步电路是一个实现中的延迟锁定环(DLL)电路和另一个实现中的锁相环(PLL)电路。 DLL或PLL电路可以是模拟或数字的。 时钟同步电路产生分布在整个可编程集成电路中的同步时钟信号。 同步时钟信号可编程地连接到集成电路的可编程逻辑元件或逻辑阵列块(LAB)。 当在集成电路内分配时钟信号时,时钟同步电路减小或最小化时钟偏移。 时钟同步电路提高了可编程逻辑集成电路的整体性能。
    • 5. 发明授权
    • Programmable logic device memory cell circuit
    • 可编程逻辑器件存储单元电路
    • US6115312A
    • 2000-09-05
    • US167637
    • 1998-10-06
    • David E. JeffersonBruce B. Pedersen
    • David E. JeffersonBruce B. Pedersen
    • G11C11/41G11C7/00G11C7/20G11C11/412G11C29/04
    • G11C11/412G11C7/20
    • A memory cell circuit for a programmable logic device is provided that allows groups of memory cells to be powered down when one or more of the memory cells in a group is defective. Each memory cell contains two cross-coupled inverters for storing programming data for the programmable logic device. A first inverter in each cell is powered by a global power signal. A second inverter in each cell is powered by a power supply signal. The memory cells are powered down by taking the global power signal low while maintaining the power supply signal high. Because the second inverter remains active during power down, the memory cells may be shut down completely. The memory cell circuit may be used to set all of the memory cells to a known state upon power up.
    • 提供了一种用于可编程逻辑器件的存储单元电路,其中当组中的一个或多个存储器单元有缺陷时,允许存储单元组被断电。 每个存储单元包含两个交叉耦合的反相器,用于存储可编程逻辑器件的编程数据。 每个单元中的第一个反相器由全局功率信号供电。 每个单元中的第二个反相器由电源信号供电。 在保持电源信号为高电平的同时,将全局电源信号置于低电平,使存储单元断电。 由于第二个反相器在掉电期间保持有效,因此存储单元可能完全关闭。 存储单元电路可以用于在加电时将所有存储单元设置为已知状态。
    • 6. 发明授权
    • Flexible RAM clock enable
    • 灵活的RAM时钟使能
    • US07397726B1
    • 2008-07-08
    • US11399771
    • 2006-04-07
    • Jinyong YuanChristopher F. LaneDavid E. JeffersonVaughn Betz
    • Jinyong YuanChristopher F. LaneDavid E. JeffersonVaughn Betz
    • G11C8/00G11C7/10
    • G11C7/1075G11C8/18H03K19/1737
    • A first set of configuration logic is configurable to provide a first port input clock signal for controlling input registers of a first port of a memory block. The first set of configuration logic is also configurable to provide a first port core clock signal for controlling the memory block core. The first port core clock signal can either be the same as the first port input clock signal, or can be controlled independently from the first port input clock signal. A second set of configuration logic is configurable to provide a second port input clock signal for controlling input registers of a second port of the memory block. The second set of configuration logic is also configurable to provide a second port core clock signal for controlling the memory block core. The second port core clock signal can be controlled independently from the second port input clock signal.
    • 第一组配置逻辑可配置为提供用于控制存储器块的第一端口的输入寄存器的第一端口输入时钟信号。 第一组配置逻辑也可配置为提供用于控制存储块核心的第一端口核心时钟信号。 第一个端口核心时钟信号可以与第一个端口输入时钟信号相同,也可以独立于第一个端口输入时钟信号进行控制。 第二组配置逻辑可配置为提供用于控制存储器块的第二端口的输入寄存器的第二端口输入时钟信号。 第二组配置逻辑也可配置为提供用于控制存储块核心的第二端口核心时钟信号。 可以独立于第二端口输入时钟信号来控制第二端口核心时钟信号。
    • 10. 发明授权
    • Random access memory based buffer memory and associated method utilizing
pipelined look-ahead reading
    • 基于随机存取存储器的缓冲存储器和相关方法,利用流水线的预读读数
    • US5293623A
    • 1994-03-08
    • US976719
    • 1992-11-16
    • Jozef FroniewskiDavid E. Jefferson
    • Jozef FroniewskiDavid E. Jefferson
    • G11C7/00G06F5/16G06F7/78G06F12/02G06F12/00G11C8/04
    • G06F7/785G06F12/0215G06F5/16
    • Stored data elements are read from a first-in-first-out (FIFO) buffer memory in a pipelined fashion. A look-ahead fetching technique is utilized during a memory read cycle operation to advance (select) a subsequent data element in preparation for a next read command. Data read in advance is not output, however, until a subsequent read cycle corresponding to a next request for data in the buffer memory. A first data element written into the buffer memory is stored in an initial data register. Upon a first read request, the first data element is output from the initial data register. A first and a second memory array are provided for alternately storing successive ones of data elements written into the buffer memory. While a presently requested data element from the first array is being output, a memory cell in the second array, which contains the next data element to be requested, is selected and sensed, and the sensed value placed on an output line. Upon receipt of a next request, the value maintained on the output line is output, and a memory cell in the first array, containing the next data element to be requested, is selected and sensed, and that sensed value is placed on a different output line. Such a sequence continues for successive read requests, thus forming a pipelined FIFO buffer memory with look-ahead sensing of memory cells.
    • 存储的数据元素以流水线方式从先进先出(FIFO)缓冲存储器读取。 在存储器读取周期操作期间利用先行提取技术来推进(选择)随后的数据元素以准备下一个读取命令。 然而,预先读取的数据不会被输出,直到与缓冲存储器中的下一个数据请求对应的后续读取周期。 写入缓冲存储器的第一数据元素被存储在初始数据寄存器中。 在第一读取请求时,从初始数据寄存器输出第一数据元素。 提供第一和第二存储器阵列,用于交替地存储写入缓冲存储器中的连续数据元素。 当正在输出来自第一阵列的当前请求的数据元素时,选择并感测包含要请求的下一数据元素的第二阵列中的存储单元,并将感测值放置在输出行上。 在接收到下一个请求时,输出保持在输出行上的值,并且选择并感测包含要请求的下一数据元素的第一阵列中的存储单元,并将该感测值放置在不同的输出 线。 这样的序列继续用于连续的读请求,从而形成具有存储器单元的先行检测的流水线FIFO缓冲存储器。