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1. 发明申请

WO2008079079A1 NANOSTRUCTURED LED ARRAY WITH COLLIMATING REFLECTORS 审中-公开
标题翻译：纳米结构的LED阵列与COLLIMATING反射器
公开(公告)号：WO2008079079A1
公开(公告)日：2008-07-03
申请号：PCT/SE2007/001174
申请日：2007-12-27
申请人： QUNANO AB , SAMUELSON, Lars , PEDERSEN, Bo , OHLSSON, Jonas , MARTYNOV, Yourii , KONSEK, Steven, L. , HANBERG, Peter, Jesper
发明人： SAMUELSON, Lars , PEDERSEN, Bo , OHLSSON, Jonas , MARTYNOV, Yourii , KONSEK, Steven, L. , HANBERG, Peter, Jesper
IPC分类号： H01L27/15 , B82B1/00 , B82B3/00 , H01L33/00
CPC分类号： H01L33/24 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G02B6/107 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L33/005 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0025
摘要： The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructured LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.
摘要翻译：本发明涉及纳米结构发光二极管，LED。根据本发明的纳米结构LED器件包括多个单独的纳米结构LED的阵列。每个纳米结构LED具有其中产生光的有源区。纳米结构器件还包括多个反射器，每个反射器与一个单独的纳米结构LED（或一组纳米结构化LED）相关联。各个反射器具有面向相应的单个纳米结构化LED的有源区域的凹面，或纳米结构化LED组的有源区域。

2. 发明申请

WO2008079077A3 NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH 审中-公开
公开(公告)号：WO2008079077A3
公开(公告)日：2008-07-03
申请号：PCT/SE2007/001171
申请日：2007-12-22
申请人： QUNANO AB , SVENSSON, Patrik , OHLSSON, Jonas , SAMUELSON, Lars , LÖWGREN, Truls , MARTYNOV, Yourii
发明人： SVENSSON, Patrik , OHLSSON, Jonas , SAMUELSON, Lars , LÖWGREN, Truls , MARTYNOV, Yourii
IPC分类号： H01L29/06 , B82B1/00 , H01L21/205
摘要： The present invention provides a semiconductor device comprising a semiconductor nanoelement (100) and a volume element (105) arranged in epitaxial connection to each other. The semiconductor device is electrically connectable with the volume element (105) and the nanoelement (100) electrically connected in series. The volume element (105) is at least partly doped to provide a high charge carrier concentration into the nanoelement (100) and a low access resistance in an electrical connection to the volume element (105). Preferably the nanoelement (100) protrudes from a semiconductor substrate (110). A concentric layer (106) may be arranged on the volume element (105) to form an electrical contact. LED structures comprising nanoelement-volume element structures (100, 105) are disclosed. A method for producing a semiconductor device according to the invention is also presented.

3. 发明申请

WO2008079076A1 LED WITH UPSTANDING NANOWIRE STRUCTURE AND METHOD OF PRODUCING SUCH 审中-公开
标题翻译： LED与UPSTANAN NANOWIRE结构及其生产方法
公开(公告)号：WO2008079076A1
公开(公告)日：2008-07-03
申请号：PCT/SE2007/001170
申请日：2007-12-22
申请人： QUNANO AB , SAMUELSON, Lars , PEDERSEN, Bo , OHLSSON, Jonas
发明人： SAMUELSON, Lars , PEDERSEN, Bo , OHLSSON, Jonas
IPC分类号： H01L33/00 , B82B1/00 , B82B3/00 , H01L29/06
CPC分类号： H01L33/24 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G02B6/107 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L33/005 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0025
摘要： The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region (120) to produce light is present within the structure. The nanowire (110) or a structure formed from the nanowire, forms a wavewaveguide (116) directing at least a portion of the light produced in the active region in a direction given by the nanowire (110).
摘要翻译：本发明涉及发光二极管，LED。特别地，本发明涉及一种包含纳米线作为活性组分的LED。根据本发明的纳米结构LED包括衬底和从衬底突出的直立的纳米线。在结构内存在一个产生光的有源区（120）的pn结。纳米线（110）或由纳米线形成的结构形成波导（116），其引导在由纳米线（110）给出的方向上在有源区域中产生的光的至少一部分。

4. 发明申请

WO2010005380A1 NANOSTRUCTURED MEMORY DEVICE 审中-公开
标题翻译：纳米结构的存储器件
公开(公告)号：WO2010005380A1
公开(公告)日：2010-01-14
申请号：PCT/SE2009/050857
申请日：2009-07-02
申请人： QUNANO AB , SAMUELSON, Lars , THELANDER, Claes , OHLSSON, Jonas , MIKKELSEN, Anders
发明人： SAMUELSON, Lars , THELANDER, Claes , OHLSSON, Jonas , MIKKELSEN, Anders
IPC分类号： H01L27/105 , H01L29/02 , H01L29/06 , H01L29/12 , H01L29/80
CPC分类号： H01L29/7881 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42332 , H01L29/66825 , H01L29/803 , Y10S977/938
摘要： The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire (3) forming a current transport channel, one or more shell layers (4) arranged around at least a portion of the nanowire (3), and nano-sized charge trapping centres (10) embedded in said one or more shell layers (4), and one or more gate electrodes (14) arranged around at least a respective portion of said one or more shell layers (4). Preferably said one or more shell layers (4) are made of a wide band gap material or an insulator. The charge trapping centres (10) may be charged /written by using said one or more gate electrodes (14) and a change in an amount of charge stored in one or more of the charge trapping centres (10) alters the conductivity of the nanowire (3).
摘要翻译：本发明提供一种纳米结构存储器件，其包括形成电流传输沟道的至少一个半导体纳米线（3），围绕至少一部分纳米线（3）布置的一个或多个壳层（4）和纳米尺寸的电荷俘获嵌入在所述一个或多个壳层（4）中的中心（10）以及围绕至少所述一个或多个壳层（4）的相应部分布置的一个或多个栅电极（14）。优选地，所述一个或多个壳层（4）由宽带隙材料或绝缘体制成。可以通过使用所述一个或多个栅电极（14）对电荷捕获中心（10）进行充电/写入，并且存储在一个或多个电荷捕获中心（10）中的电荷量的变化改变了纳米线的导电性（3）。

5. 发明申请

WO2012105901A1 LITHIUM-ION BATTERY COMPRISING NANOWIRES 审中-公开
标题翻译：包含纳米线的锂离子电池
公开(公告)号：WO2012105901A1
公开(公告)日：2012-08-09
申请号：PCT/SE2012/050099
申请日：2012-02-01
申请人： QUNANO AB , SAMUELSON, Lars , OHLSSON, Jonas , MAGNUSSON, Martin
发明人： SAMUELSON, Lars , OHLSSON, Jonas , MAGNUSSON, Martin
IPC分类号： H01M4/62 , H01M4/134 , H01M10/052 , H01M4/1395 , H01M2/16
CPC分类号： H01M10/052 , B82Y30/00 , C30B25/00 , C30B29/06 , C30B29/36 , C30B29/60 , H01M2/1673 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/58 , H01M4/62 , H01M10/0565 , Y02T10/7011
摘要： The invention relates to a lithium-ion battery, comprising two electrodes and an electrolyte disposed between said two electrodes, wherein one of said electrodes comprises at least one elastic film that makes up outermost layer of said electrode such that said film abuts against the electrolyte. A plurality of gas-phase synthesized nanowires comprising silicon is partially immersed in said film and extend from said film into the electrolyte. Said plurality of nanowires is elastically deformable at least in the radial direction of the nanowires. The invention further relates to a method of manufacturing a lithium-ion battery.
摘要翻译：本发明涉及一种锂离子电池，包括两个电极和设置在所述两个电极之间的电解质，其中所述电极之一包括构成所述电极的最外层的至少一个弹性膜，使得所述膜抵靠电解质。包含硅的多个气相合成纳米线部分地浸入所述膜中并从所述膜延伸到电解质中。所述多个纳米线至少在纳米线的径向上是可弹性变形的。本发明还涉及锂离子电池的制造方法。

6. 发明申请

WO2008034850A2 ASSEMBLY OF NANOSCALED FIELD EFFECT TRANSISTORS 审中-公开
标题翻译：纳米场效应晶体管的组装
公开(公告)号：WO2008034850A2
公开(公告)日：2008-03-27
申请号：PCT/EP2007/059914
申请日：2007-09-19
申请人： QUNANO AB , WERNERSSON, Lars-Erik , LIND, Erik , BRYLLERT, Tomas , OHLSSON, Jonas , LÖWGREN, Truls , SAMUELSON, Lars , THELANDER, Claes
发明人： WERNERSSON, Lars-Erik , LIND, Erik , BRYLLERT, Tomas , OHLSSON, Jonas , LÖWGREN, Truls , SAMUELSON, Lars , THELANDER, Claes
IPC分类号： H01L29/06 , H01L27/088
CPC分类号： H01L27/0883 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/20 , H01L29/775 , H01L29/7828
摘要： The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic.
摘要翻译：本发明涉及具有包绕栅几何结构的垂直纳米线晶体管。垂直纳米线晶体管的阈值电压是由纳米线的直径控制，纳米线的掺杂，在纳米线引入异质结构段，在围绕所述纳米线的壳结构的掺杂，剪裁栅极的功函数通过应变工程，通过控制电介质或选择纳米线材料来堆叠。在相同的衬底上提供具有变化的阈值电压的晶体管，这使得能够利用阈值电压的移位来设计先进电路，类似于直接耦合的场逻辑。

7. 发明申请

WO2010005381A1 OPTOELECTRONIC SEMICONDUCTOR DEVICE 审中-公开
标题翻译：光电半导体器件
公开(公告)号：WO2010005381A1
公开(公告)日：2010-01-14
申请号：PCT/SE2009/050858
申请日：2009-07-02
申请人： QUNANO AB , OHLSSON, Jonas , SAMUELSON, Lars
发明人： OHLSSON, Jonas , SAMUELSON, Lars
IPC分类号： H01L29/06 , H01L29/12 , H01L31/06 , H01L31/102 , H01L33/00
CPC分类号： H01L33/20 , B82Y20/00 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/035281 , H01L31/03529 , H01L33/08 , H01L33/24 , H01L33/32 , H01S5/341 , Y02E10/544 , Y02E10/547
摘要： The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire (2), wherein the nanowire (2) comprises a nanowire core (3) and at least one shell layer (4) arranged around at least a portion of the nanowire core (3). The nanowire core (3) and the shell layer (4) form a pn or pin junction that in operation provides an active region (7) for carrier generation or carrier recombination. Quantum dots (10) adapted to act as carrier recombination centres or carrier generation centres are arranged in the active region (7). By using the nanowire core (3) as template for formation of the quantum dots (10) and the shell layer (4), quantum dots of homogeneous size and uniform distribution can be obtained. Basically, the optoelectronic semiconductor device can be used for light generation or light absorption. In the former case the optoelectronic semiconductor device is a light emitting diode or a laser diode and in the latter case the optoelectronic semiconductor device is a photoelectric device, such as a photo diode, a photo detector or a solar cell.
摘要翻译：本发明提供一种包括至少一个半导体纳米线（2）的光电子半导体器件，其中纳米线（2）包括纳米线芯（3）和至少一个壳层（4），其围绕纳米线芯的至少一部分（3）。纳米线芯（3）和壳层（4）形成pn或pin结，其在操作中提供用于载流子产生或载流子复合的有源区（7）。适于作为载体复合中心或载体生成中心的量子点（10）布置在有源区域（7）中。通过使用纳米线芯（3）作为形成量子点（10）和壳层（4）的模板，可以获得均匀尺寸和均匀分布的量子点。基本上，光电半导体器件可用于发光或光吸收。在前一种情况下，光电子半导体器件是发光二极管或激光二极管，并且在后一种情况下，光电半导体器件是光电器件，例如光电二极管，光电检测器或太阳能电池。

8. 发明申请

WO2009128777A1 NANOWIRE WRAP GATE DEVICES 审中-公开
标题翻译： NANOWIRE WRAP GATE设备
公开(公告)号：WO2009128777A1
公开(公告)日：2009-10-22
申请号：PCT/SE2009/050388
申请日：2009-04-15
申请人： QUNANO AB , OHLSSON, Jonas , SAMUELSON, Lars , LIND, Erik
发明人： OHLSSON, Jonas , SAMUELSON, Lars , LIND, Erik
IPC分类号： B82B1/00 , H01L29/06 , H01L29/12 , H01L29/775 , H01L29/778
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/4232 , H01L29/42376 , H01L29/7391 , H01L29/775 , H01L33/0041 , H01L33/18
摘要： The present invention provides a semiconductor device comprising at least a first semiconductor nanowire (105) having a first lengthwise region (121) of a first conductivity type, a second lengthwise region (122) of a second conductivity type, and at least a first wrap gate electrode (111) arranged at the first region (121) of the nanowire (105) in order to vary the charge carrier concentration in the first lengthwise region (121) when a voltage is applied to the first wrap gate electrode (111). Preferably a second wrap gate electrode (112) is arranged at the second lengthwise region (122). Thereby tuneable artificial junctions (114) can be accomplished without substantial doping of the nanowire (105).
摘要翻译：本发明提供一种半导体器件，其包括至少第一半导体纳米线（105），其具有第一导电类型的第一纵向区域（121），第二导电类型的第二纵向区域（122）和至少第一包层栅极电极（111），布置在纳米线（105）的第一区域（121）处，以便当将电压施加到第一覆盖栅电极（111）时，改变第一纵向区域（121）中的载流子浓度。优选地，在第二纵向区域（122）处布置第二覆盖栅电极（112）。由此可以实现可调谐的人造结（114），而不会明显地掺杂纳米线（105）。

9. 发明申请

WO2010027322A1 NANOSTRUCTURED PHOTODIODE 审中-公开
标题翻译：纳米结构光电子
公开(公告)号：WO2010027322A1
公开(公告)日：2010-03-11
申请号：PCT/SE2009/050997
申请日：2009-09-04
申请人： QUNANO AB , SAMUELSON, Lars , CAPASSO, Federico , OHLSSON, Jonas
发明人： SAMUELSON, Lars , CAPASSO, Federico , OHLSSON, Jonas
IPC分类号： H01L31/0352 , H01L31/12 , H01L31/103 , H01L31/105
CPC分类号： H01L31/03529 , H01L31/105 , H01L31/1075 , Y02E10/50
摘要： The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).
摘要翻译：本发明提供了一种光电二极管，其包括至少部分地由具有相反导电类型的半导体材料制成的第一和第二区域（2）形成的pin或pn结，其中pin或pn结包括用于产生电荷载体从吸收的光。 p-i-n或pn结的一个部分由一个或多个间隔开并布置成收集在光吸收区域（11）中产生的电荷载流子的纳米线（7）构成。提供在纳米线（7）与所述第一区域（1）和所述第二区域（2）中的一个之间的由低掺杂或本征半导体材料制成的至少一个低掺杂区域（10）使定制的光吸收区域和/或活动区域（9）的雪崩倍增区域。

10. 发明申请

WO2008034823A1 METHOD OF PRODUCING PRECISION VERTICAL AND HORIZONTAL LAYERS IN A VERTICAL SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译：在垂直半导体结构中制造精密垂直层和水平层的方法
公开(公告)号：WO2008034823A1
公开(公告)日：2008-03-27
申请号：PCT/EP2007/059846
申请日：2007-09-18
申请人： QUNANO AB , OHLSSON, Jonas , SAMUELSON, Lars , LIND, Erik , WERNERSSON, Lars-Erik , LÖWGREN, Truls
发明人： OHLSSON, Jonas , SAMUELSON, Lars , LIND, Erik , WERNERSSON, Lars-Erik , LÖWGREN, Truls
IPC分类号： H01L29/78 , H01L21/336 , H01L33/00 , C30B29/60 , H01L29/51 , H01L29/49
CPC分类号： H01L29/7827 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/125 , H01L29/495 , H01L29/517 , H01L29/66439 , H01L29/66666 , H01L29/775 , H01L29/7828 , H01L29/78642 , H01L33/24 , Y10S977/888 , Y10S977/89
摘要： The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to gate electrodes and the formation of precision layers (28) in semiconductor structures comprising a substrate (10) and an elongated structure (5) essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device (1) is utilised in combination with either anisotropic deposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.
摘要翻译：本发明涉及在垂直半导体器件（1）的垂直和水平表面（15,20）上提供不同厚度的层。特别地，本发明涉及栅电极和在半导体结构中形成精密层（28），该半导体结构包括基底（10）和基本上从基底上立起的细长结构（5）。根据本发明的方法，将装置（1）的垂直几何结构与各向异性沉积或各向异性去除沉积材料结合使用以形成非常高精度的垂直或水平层。

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