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    • 2. 发明申请
    • HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) BIT CELL ARRAY
    • 高速,低功率旋转轨道转矩(SOT)辅助自旋转换转矩磁随机存取存储器(STT-MRAM)BIT CELL ARRAY
    • WO2018038849A1
    • 2018-03-01
    • PCT/US2017/043691
    • 2017-07-25
    • QUALCOMM INCORPORATED
    • KAN, Jimmy JiananPARK, ChandoWANG, PeiyuanKIM, SungryulKANG, Seung Hyuk
    • G11C11/16
    • A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells includes a perpendicular magnetic tunnel junction (pMTJ) -a magnetic tunnel junction with perpendicular anisotropy- including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer. A spin-hall conductive material layer supports the free layer. A driver is operable to set a state of at least one of the plurality of bit cells, the driver being configured to simultaneously drive a current along the spin-Hall conductive material to generate via a Spin Hall effect a Spin Orbit Transfer -SOT- current flowing through the pMTJ and drive a further current through the pMTJ and a portion of the spin- hall conductive material layer, the further current generating with the reference layer a Spin-transfer-torque -STT- current through the pMTJ.
    • 描述了包括几个位单元的磁性随机存取存储器(MRAM)阵列。 每个位单元包括垂直磁隧道结(pMTJ) - 具有垂直各向异性的磁隧道结 - 包括参考层,支撑参考层的阻挡层和支撑阻挡层的自由层。 自旋层导电材料层支撑自由层。 驱动器可操作以设置所述多个位单元中的至少一个的状态,所述驱动器被配置为沿着自旋霍尔导电材料同时驱动电流以经由自旋霍尔效应产生自旋轨道传输-SOT-电流 流过pMTJ并驱动另一电流通过pMTJ和自旋霍尔导电材料层的一部分,进一步的电流与参考层一起产生通过pMTJ的自旋转移 - 转矩 - 电流 - 电流。