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1. 发明公开

EP3132446A1 SPIN-TRANSFER SWITCHING MAGNETIC ELEMENT FORMED FROM FERRIMAGNETIC RARE-EARTH-TRANSITION-METAL (RE-TM) ALLOYS 审中-公开
标题翻译： AUS FERRIMAGNETISCHEN SELTENERD-ÜBERGANGSMETALL（RE-TM） - LEGIERUNGEN GEFORMTE MAGNETISCHESSPINÜBERTRAGUNGSSCHALTELEMENT
公开(公告)号：EP3132446A1
公开(公告)日：2017-02-22
申请号：EP15709598.5
申请日：2015-03-02
申请人： Qualcomm Incorporated
发明人： CHEN, Wei-Chuan , ZHU, Xiaochun , PARK, Chando , KANG, Seung Hyuk
IPC分类号： G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) includes a free layer formed from a ferrimagnetic rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy. The MTJ further includes a pinned layer formed from a rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy, the pinned layer comprising one or more amorphous thin insertion layers such that a net magnetic moment of the free layer and the pinned layer is low or close to zero.
摘要翻译：磁性隧道结（MTJ）包括由铁氧体稀土 - 过渡金属（RE-TM）合金形成的自由层，其具有由RE-稀土 - 过渡金属（RE-TM）合金的稀土（RE）组成的亚晶格矩主导的净时刻， TM合金。 MTJ还包括由稀土 - 过渡金属（RE-TM）合金形成的钉扎层，其具有以RE-TM合金的稀土（RE）组成的亚晶格矩为主的净矩，被钉扎层包括一个或多个非晶薄插入层，使得自由层和钉扎层的净磁矩低或接近于零。

2. 发明申请

WO2018038849A1 HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) BIT CELL ARRAY 审中-公开
标题翻译：高速，低功率旋转轨道转矩（SOT）辅助自旋转换转矩磁随机存取存储器（STT-MRAM）BIT CELL ARRAY
公开(公告)号：WO2018038849A1
公开(公告)日：2018-03-01
申请号：PCT/US2017/043691
申请日：2017-07-25
申请人： QUALCOMM INCORPORATED
发明人： KAN, Jimmy Jianan , PARK, Chando , WANG, Peiyuan , KIM, Sungryul , KANG, Seung Hyuk
IPC分类号： G11C11/16
摘要： A magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells includes a perpendicular magnetic tunnel junction (pMTJ) -a magnetic tunnel junction with perpendicular anisotropy- including a reference layer, a barrier layer supporting the reference layer, and a free layer supporting the barrier layer. A spin-hall conductive material layer supports the free layer. A driver is operable to set a state of at least one of the plurality of bit cells, the driver being configured to simultaneously drive a current along the spin-Hall conductive material to generate via a Spin Hall effect a Spin Orbit Transfer -SOT- current flowing through the pMTJ and drive a further current through the pMTJ and a portion of the spin- hall conductive material layer, the further current generating with the reference layer a Spin-transfer-torque -STT- current through the pMTJ.
摘要翻译：描述了包括几个位单元的磁性随机存取存储器（MRAM）阵列。每个位单元包括垂直磁隧道结（pMTJ） - 具有垂直各向异性的磁隧道结 - 包括参考层，支撑参考层的阻挡层和支撑阻挡层的自由层。自旋层导电材料层支撑自由层。驱动器可操作以设置所述多个位单元中的至少一个的状态，所述驱动器被配置为沿着自旋霍尔导电材料同时驱动电流以经由自旋霍尔效应产生自旋轨道传输-SOT-电流流过pMTJ并驱动另一电流通过pMTJ和自旋霍尔导电材料层的一部分，进一步的电流与参考层一起产生通过pMTJ的自旋转移 - 转矩 - 电流 - 电流。

3. 发明申请

WO2015148059A1 METHOD FOR FABRICATING A MAGNETIC TUNNEL JUNCTION 审中-公开
标题翻译：制造磁性隧道结的方法
公开(公告)号：WO2015148059A1
公开(公告)日：2015-10-01
申请号：PCT/US2015/018274
申请日：2015-03-02
申请人： QUALCOMM INCORPORATED
发明人： LI, Xia , LEE, Kangho , CHEN, Wei-Chuan , LU, Yu , PARK, Chando , KANG, Seung Hyuk
IPC分类号： H01L43/12
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L27/224 , H01L43/08 , H01L43/12
摘要： An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.
摘要翻译：提供了一种改进的磁性隧道结装置和用于制造改进的磁性隧道结装置的方法。所提供的双蚀刻工艺减少蚀刻损伤和烧蚀材料再沉积。在一个实例中，提供了一种用于制造磁性隧道结（MTJ）的方法。该方法包括在衬底上形成缓冲层，在衬底上形成底电极，在底电极上形成引脚层，在引脚层上形成阻挡层，并在阻挡层上形成自由层。第一蚀刻包括蚀刻自由层，而不蚀刻阻挡层，引脚层和底部电极。该方法还包括在自由层上形成顶部电极，以及在顶部电极上形成硬掩模层。第二蚀刻包括蚀刻硬掩模层; 顶部电极层，阻挡层，针层和底部电极。

4. 发明申请

WO2018140125A1 ENGINEERED BARRIER LAYER INTERFACE FOR HIGH SPEED SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY 审中-公开
公开(公告)号：WO2018140125A1
公开(公告)日：2018-08-02
申请号：PCT/US2017/062636
申请日：2017-11-20
申请人： QUALCOMM INCORPORATED
发明人： PARK, Chando , KAN, Jimmy Jianan , WANG, Peiyuan , KANG, Seung Hyuk
IPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , G11C11/16 , H01F10/32
摘要： A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.

5. 发明申请

WO2016089535A1 MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY MAGNETIC TUNNEL JUNCTION DEVICE 审中-公开
标题翻译：用于旋转转矩磁阻随机存取存储器磁性隧道连接装置的磁阻蚀层
公开(公告)号：WO2016089535A1
公开(公告)日：2016-06-09
申请号：PCT/US2015/059154
申请日：2015-11-05
申请人： QUALCOMM INCORPORATED
发明人： LEE, Kangho , PARK, Chando , KAN, Jimmy , GOTTWALD, Matthias, Georg , ZHU, Xiaochun , KANG, Seung, Hyuk
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , H01L43/12
摘要： An apparatus (100) includes a capping layer (108) disposed on top of a free layer (106). The apparatus also includes a magnetic etch stop layer (110) disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.
摘要翻译：设备（100）包括设置在自由层（106）的顶部上的覆盖层（108）。该设备还包括设置在覆盖层顶部上的磁性蚀刻停止层（110）。覆盖层和磁蚀刻停止层包括在自旋传递转矩磁阻随机存取存储器（STT-MRAM）磁隧道结（MTJ）装置中。

6. 发明申请

WO2016039852A1 MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES 审中-公开
标题翻译：带有短路径的氧化镁填料，用于普通磁性隧道接头装置
公开(公告)号：WO2016039852A1
公开(公告)日：2016-03-17
申请号：PCT/US2015/040987
申请日：2015-07-17
申请人： QUALCOMM INCORPORATED
发明人： PARK, Chando , LEE, Kangho , KAN, Jimmy , GOTTWALD, Matthias Georg , ZHU, Xiaochun , KANG, Seung Hyuk
IPC分类号： H01L43/02 , H01L43/08 , H01L43/12
CPC分类号： H01L43/02 , H01L43/08 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device (300) includes a pinned layer (314), a tunnel barrier layer (310) on the pinned layer, and a free layer (308) on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer (306) on the free layer, a capping layer (302) on the PMA enhancement layer, and a conductive path (304, 305) electrically shorting the capping layer, the PMA enhancement layer and the free layer.
摘要翻译：磁性隧道结（MTJ）器件（300）包括钉扎层（314），钉扎层上的隧道势垒层（310）和隧道势垒层上的自由层（308）。 MTJ装置还包括在自由层上的垂直磁各向异性（PMA）增强层（306），PMA增强层上的覆盖层（302）和电封闭封盖层的导电路径（304,305）， PMA增强层和自由层。

7. 发明公开

EP3504711A1 HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) BIT CELL ARRAY 有权
公开(公告)号：EP3504711A1
公开(公告)日：2019-07-03
申请号：EP17746354.4
申请日：2017-07-25
申请人： Qualcomm Incorporated
发明人： KAN, Jimmy Jianan , PARK, Chando , WANG, Peiyuan , KIM, Sungryul , KANG, Seung Hyuk
IPC分类号： G11C11/16

8. 发明公开

EP3138135A1 SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR PERPENDICULAR MAGNETIC ANISOTROPY MATERIALS 审中-公开
标题翻译：具有均匀结晶纹理垂直磁各向异性材料SMOOTH KEIM LAYERS
公开(公告)号：EP3138135A1
公开(公告)日：2017-03-08
申请号：EP15715614.2
申请日：2015-03-27
申请人： Qualcomm Incorporated
发明人： GOTTWALD, Matthias Georg , KAN, Jimmy , LEE, Kangho , PARK, Chando , KANG, Seung Hyuk
IPC分类号： H01L43/12 , H01L43/08 , G11C11/16 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , H01L27/222 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.
摘要翻译：一种用于制造垂直磁性隧道结（pMTJ）装置的方法包括在所述pMTJ装置的第一电极生长的种子层。所述籽晶层具有沿生长轴一个均匀的预定的晶体取向。因此，该方法包括同时维持籽晶层的均匀的预定的晶体取向平面化所述籽晶层。

9. 发明申请

WO2017027221A1 SHADOW-EFFECT COMPENSATED FABRICATION OF MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENTS 审中-公开
标题翻译：磁悬浮连接（MTJ）元件的阴影补偿制造
公开(公告)号：WO2017027221A1
公开(公告)日：2017-02-16
申请号：PCT/US2016/044380
申请日：2016-07-28
申请人： QUALCOMM INCORPORATED
发明人： CHEN, Wei-Chuan , LU, Yu , PARK, Chando , KANG, Seung, Hyuk
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L27/222 , H01L43/02 , H01L43/08
摘要： Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) semiconductor elements is disclosed. Providing shadow-effect compensated fabrication of MTJ elements can provide reduced free layer sizing for enhanced MTJ operational margin. In certain aspects, to reduce size of a free layer during fabrication of an MTJ to provide enhanced write and retention symmetry, ion beam etching (IBE) fabrication process is employed to fabricate a free layer smaller than the pinned layer. To avoid asymmetrical footing being fabricated in free layer due to shadow-effect of neighboring MTJs, an ion beam directed at the MTJ is shadow-effect compensated. The angle of incidence of the ion beam directed at the MTJ is varied as the MTJ is rotated to be less steep when another MTJ is in directional line of the ion beam and the MTJ being fabricated. Thus, the free layer is etched more uniformly in the MTJ while avoiding increased etching damage.
摘要翻译：公开了磁隧道结（MTJ）半导体元件的阴影效应补偿制造。提供影子补偿制造的MTJ元件可以提供减少的自由层施胶，以提高MTJ的运行裕度。在某些方面，为了减少制造MTJ期间的自由层的尺寸以提供增强的写入和保持对称性，使用离子束蚀刻（IBE）制造工艺来制造小于被钉扎层的自由层。为了避免由于相邻的MTJ的阴影效应而在自由层中制造不对称的基脚，指向MTJ的离子束是阴影效应补偿的。当MTJ在离子束的方向线和制造的MTJ的方向线上时，指向MTJ的离子束的入射角度随着MTJ旋转而不太陡峭而变化。因此，在MTJ中更均匀地蚀刻自由层，同时避免增加蚀刻损伤。

10. 发明申请

WO2016122811A1 MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY 审中-公开
标题翻译： MAGNETIC TUNNEL JUNCTION（MTJ）装置阵列
公开(公告)号：WO2016122811A1
公开(公告)日：2016-08-04
申请号：PCT/US2015/067350
申请日：2015-12-22
申请人： QUALCOMM INCORPORATED
发明人： MACHKAOUTSAN, Vladimir , GOTTWALD, Matthias, Georg , BADAROGLU, Mustafa , KAN, Jimmy , LEE, Kangho , LU, Yu , PARK, Chando
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A semiconductor device (100) includes a first magnetic tunnel junction (MTJ) device (122), a second MTJ device (123), and a top electrode (110). The first MTJ device includes a barrier layer (140). The second MTJ device includes the barrier layer (140). The top electrode (110) is coupled to the first MTJ device and the second MTJ device.
摘要翻译：半导体器件（100）包括第一磁性隧道结（MTJ）器件（122），第二MTJ器件（123）和顶部电极（110）。第一MTJ装置包括阻挡层（140）。第二MTJ装置包括阻挡层（140）。顶部电极（110）耦合到第一MTJ装置和第二MTJ装置。

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