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US6051505A Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers 失效
标题翻译：用于通过含硅介电层形成金属 - 氟聚合物无残余通孔的等离子体蚀刻方法
公开(公告)号：US6051505A
公开(公告)日：2000-04-18
申请号：US35052
申请日：1998-03-05
申请人： Po-Tao Chu , Ming-Chieh Yeh , Fang-Cheng Chen , Ting-Yih Lu
发明人： Po-Tao Chu , Ming-Chieh Yeh , Fang-Cheng Chen , Ting-Yih Lu
IPC分类号： H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/76802
摘要： A plasma etch method for forming a patterned silicon containing dielectric layer within a microelectronics fabrication. There is first provided a plasma reactor chamber. There is then fixed within the plasma reactor chamber a microelectronics fabrication. The microelectronics fabrication comprises: (1) a substrate employed within the microelectronics fabrication; (2) a metal layer formed over the substrate; (3) a silicon containing dielectric layer formed upon the metal layer; and (4) a patterned photoresist layer formed upon the silicon containing dielectric layer. There is then etched through use of a plasma etch method at a first plasma reactor chamber pressure while employing the patterned photoresist layer as a photoresist etch mask layer the silicon containing dielectric layer to form a patterned silicon containing dielectric layer while reaching and etching the metal layer to form an etched metal layer. The plasma etch method employs an etchant gas composition comprising a fluorine containing etchant gas. Finally, there is pumped the plasma reactor chamber to a second plasma reactor chamber pressure lower than the first plasma reactor chamber pressure for a time sufficient to attenuate formation of a metal-fluoropolymer residue layer upon the etched metal layer.
摘要翻译：一种用于在微电子制造中形成图案化含硅介电层的等离子体蚀刻方法。首先提供了等离子体反应室。然后在等离子体反应器室内固定微电子制造。微电子制造包括：（1）在微电子制造中使用的衬底; （2）在所述基板上形成的金属层; （3）形成在所述金属层上的含硅电介质层; 和（4）形成在含硅介电层上的图案化光致抗蚀剂层。然后通过使用等离子体蚀刻方法在第一等离子体反应器室压力下蚀刻，同时使用图案化的光致抗蚀剂层作为光致抗蚀剂蚀刻掩模层，含硅介电层以形成图案化的含硅介电层，同时到达并蚀刻金属层以形成蚀刻的金属层。等离子体蚀刻方法采用包含含氟蚀刻剂气体的蚀刻剂气体组合物。最后，将等离子体反应室泵送到低于第一等离子体反应器室压力的第二等离子体反应器室的压力足以减少蚀刻金属层上的金属 - 含氟聚合物残余物层的形成。

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