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    • 1. 发明授权
    • Plasma etch method for forming metal-fluoropolymer residue free vias
through silicon containing dielectric layers
    • 用于通过含硅介电层形成金属 - 氟聚合物无残余通孔的等离子体蚀刻方法
    • US6051505A
    • 2000-04-18
    • US35052
    • 1998-03-05
    • Po-Tao ChuMing-Chieh YehFang-Cheng ChenTing-Yih Lu
    • Po-Tao ChuMing-Chieh YehFang-Cheng ChenTing-Yih Lu
    • H01L21/311H01L21/768H01L21/302H01L21/461
    • H01L21/31116H01L21/76802
    • A plasma etch method for forming a patterned silicon containing dielectric layer within a microelectronics fabrication. There is first provided a plasma reactor chamber. There is then fixed within the plasma reactor chamber a microelectronics fabrication. The microelectronics fabrication comprises: (1) a substrate employed within the microelectronics fabrication; (2) a metal layer formed over the substrate; (3) a silicon containing dielectric layer formed upon the metal layer; and (4) a patterned photoresist layer formed upon the silicon containing dielectric layer. There is then etched through use of a plasma etch method at a first plasma reactor chamber pressure while employing the patterned photoresist layer as a photoresist etch mask layer the silicon containing dielectric layer to form a patterned silicon containing dielectric layer while reaching and etching the metal layer to form an etched metal layer. The plasma etch method employs an etchant gas composition comprising a fluorine containing etchant gas. Finally, there is pumped the plasma reactor chamber to a second plasma reactor chamber pressure lower than the first plasma reactor chamber pressure for a time sufficient to attenuate formation of a metal-fluoropolymer residue layer upon the etched metal layer.
    • 一种用于在微电子制造中形成图案化含硅介电层的等离子体蚀刻方法。 首先提供了等离子体反应室。 然后在等离子体反应器室内固定微电子制造。 微电子制造包括:(1)在微电子制造中使用的衬底; (2)在所述基板上形成的金属层; (3)形成在所述金属层上的含硅电介质层; 和(4)形成在含硅介电层上的图案化光致抗蚀剂层。 然后通过使用等离子体蚀刻方法在第一等离子体反应器室压力下蚀刻,同时使用图案化的光致抗蚀剂层作为光致抗蚀剂蚀刻掩模层,含硅介电层以形成图案化的含硅介电层,同时到达并蚀刻金属层 以形成蚀刻的金属层。 等离子体蚀刻方法采用包含含氟蚀刻剂气体的蚀刻剂气体组合物。 最后,将等离子体反应室泵送到低于第一等离子体反应器室压力的第二等离子体反应器室的压力足以减少蚀刻金属层上的金属 - 含氟聚合物残余物层的形成。
    • 4. 发明授权
    • Memory interface and adaptive data access method
    • 存储器接口和自适应数据访问方法
    • US08370568B2
    • 2013-02-05
    • US12050369
    • 2008-03-18
    • Ming-Chieh YehSteve Wiyi Yang
    • Ming-Chieh YehSteve Wiyi Yang
    • G06F12/00
    • G11C8/18G11C7/02G11C7/1006G11C7/1066
    • A data access method for an application circuit to access a memory. The method includes steps of: receiving a first data from the application circuit; duplicating the first data to obtain a duplicated first data; and writing the first data and the duplicated first data into the memory at continuously accessible addresses. For accessing to the first data, the first data and the duplicated first data are read from the memory in response to a rising edge and a falling edge of a data-triggering signal; and one of the first data and the duplicated first data is outputted while the other of the first data and the duplicated first data is discarded.
    • 一种用于访问存储器的应用电路的数据访问方法。 该方法包括以下步骤:从应用电路接收第一数据; 复制第一数据以获得重复的第一数据; 以及将所述第一数据和所述重复的第一数据以连续可访问的地址写入所述存储器。 为了访问第一数据,响应于数据触发信号的上升沿和下降沿,从存储器读取第一数据和复制的第一数据; 并且输出第一数据和复制的第一数据中的一个,同时丢弃第一数据和复制的第一数据中的另一个。
    • 6. 发明申请
    • MEMORY INTERFACE AND ADAPTIVE DATA ACCESS METHOD
    • 存储器接口和自适应数据访问方法
    • US20080232186A1
    • 2008-09-25
    • US12050369
    • 2008-03-18
    • Ming-Chieh YehSteve Wiyi Yang
    • Ming-Chieh YehSteve Wiyi Yang
    • G11C8/18G11C8/00
    • G11C8/18G11C7/02G11C7/1006G11C7/1066
    • A data access method for an application circuit to access a memory. The method includes steps of: receiving a first data from the application circuit; duplicating the first data to obtain a duplicated first data; and writing the first data and the duplicated first data into the memory at continuously accessible addresses. For accessing to the first data, the first data and the duplicated first data are read from the memory in response to a rising edge and a falling edge of a data-triggering signal; and one of the first data and the duplicated first data is outputted while the other of the first data and the duplicated first data is discarded.
    • 一种用于访问存储器的应用电路的数据访问方法。 该方法包括以下步骤:从应用电路接收第一数据; 复制第一数据以获得重复的第一数据; 以及以连续可访问的地址将所述第一数据和所述重复的第一数据写入所述存储器。 为了访问第一数据,响应于数据触发信号的上升沿和下降沿,从存储器读取第一数据和复制的第一数据; 并且输出第一数据和复制的第一数据中的一个,同时丢弃第一数据和复制的第一数据中的另一个。