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1. 发明申请

US20070117040A1 Water castable-water strippable top coats for 193 nm immersion lithography 审中-公开
标题翻译：可浇注水可剥离的顶涂层，用于193 nm浸没光刻
公开(公告)号：US20070117040A1
公开(公告)日：2007-05-24
申请号：US11284358
申请日：2005-11-21
申请人： Phillip Brock , Jennifer Cha , Dario Gil , Carl Larson , Linda Sundberg , Gregory Wallraff
发明人： Phillip Brock , Jennifer Cha , Dario Gil , Carl Larson , Linda Sundberg , Gregory Wallraff
IPC分类号： G03C1/00
CPC分类号： G03F7/2041 , C09D129/04 , C09D131/04 , G03F7/11 , C08L2666/04
摘要： A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.
摘要翻译：公开了一种用于施加在光致抗蚀剂材料上的面漆材料。面漆材料包括在约25℃或更低的温度下微溶或不溶于水的聚合物，但在约60℃或更高的温度下可溶于水。聚合物含有聚乙烯醇单体单元和具有以下聚合物结构的聚乙酸乙烯酯或聚乙烯醚单体单元：其中R是脂族或脂环族基团; m和n独立地是整数，并且相同或不同; 并且p为零或1.面漆材料可用于光刻工艺，其中将顶涂层材料施加在光致抗蚀剂层上。面漆材料在使用水作为成像介质的浸没式光刻技术中特别有用。本发明的面漆材料也可用于使用有机液体作为浸渍介质的浸渍光刻。

2. 发明申请

US20080026330A1 IMMERSION TOPCOAT MATERIALS WITH IMPROVED PERFORMANCE 有权
标题翻译：具有改进性能的倾斜贴面材料
公开(公告)号：US20080026330A1
公开(公告)日：2008-01-31
申请号：US11868320
申请日：2007-10-05
申请人： Robert Allen , Phillip Brock , Dario Gil , William Hinsberg , Carl Larson , Linda Sundberg , Gregory Wallraff
发明人： Robert Allen , Phillip Brock , Dario Gil , William Hinsberg , Carl Larson , Linda Sundberg , Gregory Wallraff
IPC分类号： G03C5/00 , C08F20/06
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
摘要翻译：公开了一种用于施加在光致抗蚀剂材料上的面漆材料。面漆材料包含至少一种溶剂和在含水碱性显影剂中具有至少3000 /秒的溶解速率的聚合物。聚合物含有包含以下两种结构之一的六氟醇单体单元：其中n是整数。面漆材料可以用于光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。面漆材料优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

3. 发明申请

US20060188804A1 Immersion topcoat materials with improved performance 有权
标题翻译：浸渍面漆材料具有改进的性能
公开(公告)号：US20060188804A1
公开(公告)日：2006-08-24
申请号：US11063940
申请日：2005-02-23
申请人： Robert Allen , Phillip Brock , Dario Gil , William Hinsberg , Carl Larson , Linda Sundberg , Gregory Wallraff
发明人： Robert Allen , Phillip Brock , Dario Gil , William Hinsberg , Carl Larson , Linda Sundberg , Gregory Wallraff
IPC分类号： G03C1/76
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
摘要翻译：公开了一种用于施加在光致抗蚀剂材料上的面漆材料。面漆材料包含至少一种溶剂和在含水碱性显影剂中具有至少3000 /秒的溶解速率的聚合物。聚合物含有包含以下两种结构之一的六氟醇单体单元：其中n是整数。面漆材料可以用于光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。面漆材料优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

4. 发明申请

US20060128914A1 photoresist composition 有权
标题翻译：光致抗蚀剂组合物
公开(公告)号：US20060128914A1
公开(公告)日：2006-06-15
申请号：US11330659
申请日：2006-01-12
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F220/22
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化的直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2）（CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2））或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

5. 发明申请

US20050019696A1 Photoresist composition 失效
标题翻译：光刻胶组成
公开(公告)号：US20050019696A1
公开(公告)日：2005-01-27
申请号：US10916934
申请日：2004-08-12
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F20/22 , C08F220/28 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/73
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译：提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物：其中R 1表示氢（H），1至20个碳的直链或支链烷基，或半或全氟化线性或碳原子数为1〜20的支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基（CF 3）基团的取代的脂族基团，或取代或未取代的芳族基团; 并且其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟取代或未取代的脂族基团。本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

6. 发明申请

US20050123852A1 Method for patterning a low activation energy photoresist 有权
标题翻译：图案化低活化能光致抗蚀剂的方法
公开(公告)号：US20050123852A1
公开(公告)日：2005-06-09
申请号：US10729452
申请日：2003-12-04
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： G03F7/004 , G03F7/039 , G03F7/40
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟基烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯烃单体， SUP），和（iii）其组合。缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

7. 发明申请

US20050124774A1 Low activation energy photoresists 有权
标题翻译：低活化能光刻胶
公开(公告)号：US20050124774A1
公开(公告)日：2005-06-09
申请号：US10729169
申请日：2003-12-04
申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard Dipietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
发明人： Robert Allen , Gregory Breyta , Phillip Brock , Richard Dipietro , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
IPC分类号： C08F12/20 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0046 , G03F7/0397
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯属单体， SUP），和（iii）其组合。缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

8. 发明申请

US20070212654A1 Method for lithography for optimizing process conditions 失效
标题翻译：光刻方法优化工艺条件
公开(公告)号：US20070212654A1
公开(公告)日：2007-09-13
申请号：US11371820
申请日：2006-03-09
申请人： Carl Larson , Sharee McNab , Steven Steen , Raman Viswanathan , Gregory Wallraff
发明人： Carl Larson , Sharee McNab , Steven Steen , Raman Viswanathan , Gregory Wallraff
IPC分类号： G03F7/20
CPC分类号： G03F7/2022
摘要： A method of lithography is disclosed, which allows for independent resist process optimization of two or more exposure steps that are performed on a single resist layer. By providing for a separate post-exposure bake after each resist exposure step, pattern resolution for each exposure can be optimized. The method can generally be used with different lithographic techniques, and is well-suited for hybrid lithography. It has been applied to the fabrication of a device, in which the active area and the gate levels are defined in separate mask levels using hybrid lithography with an e-beam source and a 248 nm source respectively. Conditions for post-exposure bakes after the two exposure steps are independently adjusted to provide for optimized results.
摘要翻译：公开了一种光刻方法，其允许在单个抗蚀剂层上执行的两个或多个曝光步骤的独立抗蚀剂工艺优化。通过在每个抗蚀剂曝光步骤之后提供单独的曝光后烘烤，可以优化每个曝光的图案分辨率。该方法通常可以用于不同的光刻技术，并且非常适用于混合光刻。已经将其应用于器件的制造，其中使用具有电子束源和248nm源的混合光刻将有源面积和栅极电平限定在分开的掩模级中。独立调整两次曝光步骤后暴露后烘烤条件以提供优化结果。

9. 发明申请

US20060251989A1 Photoresists for visible light imaging 有权
标题翻译：用于可见光成像的光致抗蚀剂
公开(公告)号：US20060251989A1
公开(公告)日：2006-11-09
申请号：US11125971
申请日：2005-05-09
申请人： Gregory Breyta , Daniel Dawson , Carl Larson , Gregory Wallraff
发明人： Gregory Breyta , Daniel Dawson , Carl Larson , Gregory Wallraff
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/001 , G03F7/031 , G03F7/2004 , Y10S430/115 , Y10S430/127
摘要： A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
摘要翻译：公开了一类光刻抗蚀剂组合物，其适用于可见光并且不需要曝光后烘烤步骤。所公开的光致抗蚀剂优选是化学放大光致抗蚀剂，并含有具有式（I）结构的光敏剂：其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同，并且具有结构-XR 3，其中X是O或S，R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基，R 4和R 5独立地选自氢和-XR 3 O 3，或者如果各自的邻位另一个可以一起形成五元或六元芳环，条件是含有Ar 1，Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用，特别是用于制造全息衍射光栅。

10. 发明申请

US20060257786A1 Method for employing vertical acid transport for lithographic imaging applications 失效
标题翻译：用于平版印刷成像应用的垂直酸运输方法
公开(公告)号：US20060257786A1
公开(公告)日：2006-11-16
申请号：US11492276
申请日：2006-07-25
申请人： Carl Larson , Gregory Wallraff
发明人： Carl Larson , Gregory Wallraff
IPC分类号： G03C1/00
CPC分类号： G03F7/095 , G03F7/0382 , G03F7/0392 , G03F7/094
摘要： The present invention provides methods for forming images in positive- or negative-tone chemically amplified photoresists. The methods of the present invention rely on the vertical up-diffusion of photoacid generated by patternwise imaging of an underlayer disposed on a substrate and overcoated with a polymer containing acid labile functionality. In accordance with the present invention, the vertical up-diffusion can be the sole mechanism for imaging formation or the methods of the present invention can be used in conjunction with conventional imaging processes.
摘要翻译：本发明提供了在正或负色调化学放大的光致抗蚀剂中形成图像的方法。本发明的方法依赖于通过对设置在基底上的底层的图案成像产生的光酸的垂直向上扩散，并且用含有酸不稳定性功能的聚合物涂覆。根据本发明，垂直向上扩散可以是用于成像成像的唯一机构，或者本发明的方法可以与传统的成像过程结合使用。

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