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1. 发明授权

US4359775A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4359775A
公开(公告)日：1982-11-16
申请号：US178568
申请日：1980-08-15
申请人： Peter Marschall , Klaus Petermann , Ewald Schlosser , Hans-Peter Vollmer , Claus Wolk
发明人： Peter Marschall , Klaus Petermann , Ewald Schlosser , Hans-Peter Vollmer , Claus Wolk
IPC分类号： H01S5/00 , H01S5/20 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32308 , H01S5/20 , H01S5/2059
摘要： A semi-conductor laser comprising a crystal having a sequence of layers forming a heterostructure diode and which includes a laser active zone interposed between a pair of semiconductor layers. Each of these semi-conductor layers has a band gap which is greater than that of the layers within the laser active zone. The laser active zone includes a first semiconductor layer having a given band gap, and at least second and third semiconductor layers each having a band gap which is greater than that of the first layer. The first layer is contiguous with and interposed between semiconductor layers each having a band gap which is greater than that of said first layer and forms a pn-junction with one of those contiguous layers. A strip-shaped region of a uniform conductivity type diffused from the surface of the crystal penetrates into at least one layer of the laser active zone but does not penetrate into the first layer.
摘要翻译：一种半导体激光器，包括具有形成异质结构二极管的层序列的晶体，并且包括插入在一对半导体层之间的激光器活性区域。这些半导体层中的每一个具有比激光活性区内的层的带隙大的带隙。激光活性区域包括具有给定带隙的第一半导体层，以及至少第二和第三半导体层，每个半导体层的带隙大于第一层的带隙。第一层与每个具有大于所述第一层的带隙的带隙相邻并且插入在半导体层之间并且与这些邻接层之一形成pn结。从晶体表面扩散的均匀导电类型的条状区域穿透至激光活性区域的至少一层，但不会渗入第一层。

2. 发明授权

US4692926A Mushroom-shaped semiconductor stripe laser 失效
标题翻译：蘑菇状半导体条纹激光
公开(公告)号：US4692926A
公开(公告)日：1987-09-08
申请号：US727251
申请日：1985-04-25
申请人： Peter Marschall , Ewald Schlosser , Hans-Peter Vollmer
发明人： Peter Marschall , Ewald Schlosser , Hans-Peter Vollmer
IPC分类号： H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： A mushroom-shaped semiconductor stripe laser, particularly with transversal, monomode light distribution and a double heterostructure comprised of a substrate, a laser-active zone, a cover layer and an electrically contacting metal layer for the cover layer with the cover layer being underetched such that a mushroom-shaped structure is formed in which the laser-active zone is constricted to a stripe-shaped region. The ratio of the width of the cover layer to the width of the laser-active zone lies in a range between two and five, and the cover layer is electrically conductively connected with the metal layer on its outer surface as well as on at least one of its side surfaces.
摘要翻译：伞形半导体条纹激光器，特别是具有横向，单模光分布和双异质结构，包括基底，激光活性区，覆盖层和用于覆盖层的电接触金属层，其覆盖层未被蚀刻形成蘑菇状结构，其中激光活性区域被收缩成条形区域。覆盖层的宽度与激光 - 活性区域的宽度的比率在2至5之间的范围内，并且覆盖层与其外表面上的金属层以及至少一个的侧面。

3. 发明授权

US4454603A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4454603A
公开(公告)日：1984-06-12
申请号：US343013
申请日：1982-01-26
申请人： Peter Marschall , Ewald Schlosser , Claus Wolk
发明人： Peter Marschall , Ewald Schlosser , Claus Wolk
IPC分类号： H01S5/20 , H01S3/18
CPC分类号： H01S5/20 , H01S5/2059
摘要： An improved semiconductor laser of the type composed of a sequence of semiconductor layers forming a heterostructure diode including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, two respectively differently doped semiconductor layers disposed at respectively opposite sides of the active zone, a monocrystalline outer layer located in the layer sequence and spaced from one of the differently doped semiconductor layers by an additional layer, a trough-shaped recess extending essentially perpendicularly to the radiation exit face formed in the outer major surface of the monocrystalline layer, and means disposed adjacent the recess for constricting the current flow in the forward direction of the diode to a narrow strip-shaped region in the laser active zone. The series resistance of such a laser is lowered in that the bottom of the recess is formed by the additional semiconductor layer adjacent the monocrystalline layer and an electrically conductive contact is provided on at least the bottom of the recess.
摘要翻译：一种改进的半导体激光器，其类型由形成异质结构二极管的半导体层序列组成，包括基本上均匀掺杂的层，限定具有垂直于该层的激光辐射出射面的激光活性区域，两个分别不同的掺杂半导体层，分别相对设置活性区的侧面，位于层序列中的单晶外层，并且通过附加层与不同掺杂的半导体层中的一个间隔开，基本上垂直于形成在外部主表面中的辐射出射面延伸的槽形凹部所述单晶层以及邻近所述凹槽设置的装置，用于将所述二极管的正向电流流向收缩到所述激光活动区域中的窄条形区域。这样的激光器的串联电阻降低，因为凹槽的底部由与单晶层相邻的附加半导体层形成，并且至少在凹部的底部上提供导电触点。

4. 发明授权

US4278949A Semiconductor laser structure and manufacture 失效
标题翻译：半导体激光器的结构和制造
公开(公告)号：US4278949A
公开(公告)日：1981-07-14
申请号：US041171
申请日：1979-05-21
申请人： Peter Marschall , Ewald Schlosser , Claus Wolk
发明人： Peter Marschall , Ewald Schlosser , Claus Wolk
IPC分类号： H01S5/00 , H01S5/02 , H01S5/20 , H01S5/22 , H01S3/19
CPC分类号： H01S5/2202 , H01L24/32 , H01L2224/04026 , H01S5/0224 , H01S5/02272 , H01S5/2004 , H01S5/2059 , H01S5/3202
摘要： In a semiconductor laser composed of a sequence of layers forming a heterostructure diode and including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, the current flowing in the forward direction of the diode is constricted to a narrow, strip-shaped region in the laser active zone by providing a monocrystalline layer located in the layer sequence to be spaced from the active zone by at least one intervening, doped semiconductor layer, providing the surface of the monocrystalline layer directed away from the active zone with a trough-shaped recess extending essentially perpendicularly to said radiation exit face, and diffusing, via the surface provided with the recess, and toward the active zone, doping material which produces a doped region of same conductivity type as the intervening, doped layer, the doped region being delimited by a diffusion front substantially parallel, and corresponding in contour, to the surface provided with said recess, and located to provide a localized semiconductor region of a single conductivity type in the area below the recess and between the recess and said active zone, and semiconductive regions of respectively opposite conductivity types separated by the diffusion front in areas adjacent the localized region.
摘要翻译：在由形成异质结构二极管的层序列组成的半导体激光器中，并且包括限定具有垂直于层的激光辐射出射面的激光有源区的基本上均匀的掺杂层，在二极管的正向流动的电流被限制到通过提供位于层序列中的单晶层与激活区域间隔开至少一个介入的掺杂半导体层，从而提供单晶层的指向远离活动区域，其具有基本上垂直于所述辐射出射面延伸的槽状凹部，并且经由设置有凹部的表面并朝向有源区域扩散，所述掺杂材料产生与中间掺杂的相同导电类型的掺杂区域层，掺杂区域由基本上平行的扩散前沿界定，到达设置有所述凹部的表面，并且被定位成在凹部下方以及凹部和所述活性区域之间的区域中提供单一导电类型的局部半导体区域，以及由扩散分开的分别相反的导电类型的半导体区域在与局部区域相邻的区域中。

5. 发明授权

US4468258A Method of controlling the partial pressure of at least one substance mixture or mixture of substances 失效
标题翻译：控制至少一种物质混合物或物质混合物的分压的方法
公开(公告)号：US4468258A
公开(公告)日：1984-08-28
申请号：US400678
申请日：1982-07-22
申请人： Werner Pfister , Ewald Schlosser
发明人： Werner Pfister , Ewald Schlosser
IPC分类号： C30B19/04 , C30B19/06 , H01L21/208
CPC分类号： C30B29/40 , C30B19/00 , C30B19/063 , Y10S117/906
摘要： A method of controlling the partial pressure of at least one substance or substance mixture comprising arranging the substance or mixture of substances in a chamber, arranging at least one element containing the substance or mixture of substances in the chamber and selecting the structure or crystal structure of the element to provide the desired partial pressure in the chamber.
摘要翻译：一种控制至少一种物质或物质混合物的分压的方法，包括将物质或物质的混合物排列在室中，将至少一种含有物质或物质混合物的元素排列在室中，并选择结构或晶体结构所述元件在腔室中提供期望的分压。

6. 发明授权

US5459333A Semiconductor photodetector with potential barrier regions 失效
标题翻译：具有势垒区域的半导体光电探测器
公开(公告)号：US5459333A
公开(公告)日：1995-10-17
申请号：US289120
申请日：1994-08-11
申请人： Hans Brugger , Diplom-Physiker U. Meiners , Ewald Schlosser
发明人： Hans Brugger , Diplom-Physiker U. Meiners , Ewald Schlosser
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/09 , H01L27/14 , H01L31/00
CPC分类号： H01L27/146 , H01L31/0352 , H01L31/09
摘要： A semiconductor photodetector has a channel of conductive material which connects two terminal poles and is defined by potential barrier regions and by space-charge regions that can be reduced by means of incident light. The channel is comprised of a conductive layer parallel to the surface and having laterally narrowing barrier regions extending through the layer.
摘要翻译：半导体光电检测器具有导电材料的通道，其连接两个端极并且由势垒区域和可以通过入射光减少的空间电荷区域限定。该通道由平行于该表面的导电层组成，并具有延伸穿过该层的横向变窄的阻挡区域。

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