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    • 1. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US4359775A
    • 1982-11-16
    • US178568
    • 1980-08-15
    • Peter MarschallKlaus PetermannEwald SchlosserHans-Peter VollmerClaus Wolk
    • Peter MarschallKlaus PetermannEwald SchlosserHans-Peter VollmerClaus Wolk
    • H01S5/00H01S5/20H01S5/323H01S3/19
    • H01S5/32308H01S5/20H01S5/2059
    • A semi-conductor laser comprising a crystal having a sequence of layers forming a heterostructure diode and which includes a laser active zone interposed between a pair of semiconductor layers. Each of these semi-conductor layers has a band gap which is greater than that of the layers within the laser active zone. The laser active zone includes a first semiconductor layer having a given band gap, and at least second and third semiconductor layers each having a band gap which is greater than that of the first layer. The first layer is contiguous with and interposed between semiconductor layers each having a band gap which is greater than that of said first layer and forms a pn-junction with one of those contiguous layers. A strip-shaped region of a uniform conductivity type diffused from the surface of the crystal penetrates into at least one layer of the laser active zone but does not penetrate into the first layer.
    • 一种半导体激光器,包括具有形成异质结构二极管的层序列的晶体,并且包括插入在一对半导体层之间的激光器活性区域。 这些半导体层中的每一个具有比激光活性区内的层的带隙大的带隙。 激光活性区域包括具有给定带隙的第一半导体层,以及至少第二和第三半导体层,每个半导体层的带隙大于第一层的带隙。 第一层与每个具有大于所述第一层的带隙的带隙相邻并且插入在半导体层之间并且与这些邻接层之一形成pn结。 从晶体表面扩散的均匀导电类型的条状区域穿透至激光活性区域的至少一层,但不会渗入第一层。
    • 2. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US4454603A
    • 1984-06-12
    • US343013
    • 1982-01-26
    • Peter MarschallEwald SchlosserClaus Wolk
    • Peter MarschallEwald SchlosserClaus Wolk
    • H01S5/20H01S3/18
    • H01S5/20H01S5/2059
    • An improved semiconductor laser of the type composed of a sequence of semiconductor layers forming a heterostructure diode including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, two respectively differently doped semiconductor layers disposed at respectively opposite sides of the active zone, a monocrystalline outer layer located in the layer sequence and spaced from one of the differently doped semiconductor layers by an additional layer, a trough-shaped recess extending essentially perpendicularly to the radiation exit face formed in the outer major surface of the monocrystalline layer, and means disposed adjacent the recess for constricting the current flow in the forward direction of the diode to a narrow strip-shaped region in the laser active zone. The series resistance of such a laser is lowered in that the bottom of the recess is formed by the additional semiconductor layer adjacent the monocrystalline layer and an electrically conductive contact is provided on at least the bottom of the recess.
    • 一种改进的半导体激光器,其类型由形成异质结构二极管的半导体层序列组成,包括基本上均匀掺杂的层,限定具有垂直于该层的激光辐射出射面的激光活性区域,两个分别不同的掺杂半导体层,分别相对设置 活性区的侧面,位于层序列中的单晶外层,并且通过附加层与不同掺杂的半导体层中的一个间隔开,基本上垂直于形成在外部主表面中的辐射出射面延伸的槽形凹部 所述单晶层以及邻近所述凹槽设置的装置,用于将所述二极管的正向电流流向收缩到所述激光活动区域中的窄条形区域。 这样的激光器的串联电阻降低,因为凹槽的底部由与单晶层相邻的附加半导体层形成,并且至少在凹部的底部上提供导电触点。
    • 3. 发明授权
    • Semiconductor laser structure and manufacture
    • 半导体激光器的结构和制造
    • US4278949A
    • 1981-07-14
    • US041171
    • 1979-05-21
    • Peter MarschallEwald SchlosserClaus Wolk
    • Peter MarschallEwald SchlosserClaus Wolk
    • H01S5/00H01S5/02H01S5/20H01S5/22H01S3/19
    • H01S5/2202H01L24/32H01L2224/04026H01S5/0224H01S5/02272H01S5/2004H01S5/2059H01S5/3202
    • In a semiconductor laser composed of a sequence of layers forming a heterostructure diode and including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, the current flowing in the forward direction of the diode is constricted to a narrow, strip-shaped region in the laser active zone by providing a monocrystalline layer located in the layer sequence to be spaced from the active zone by at least one intervening, doped semiconductor layer, providing the surface of the monocrystalline layer directed away from the active zone with a trough-shaped recess extending essentially perpendicularly to said radiation exit face, and diffusing, via the surface provided with the recess, and toward the active zone, doping material which produces a doped region of same conductivity type as the intervening, doped layer, the doped region being delimited by a diffusion front substantially parallel, and corresponding in contour, to the surface provided with said recess, and located to provide a localized semiconductor region of a single conductivity type in the area below the recess and between the recess and said active zone, and semiconductive regions of respectively opposite conductivity types separated by the diffusion front in areas adjacent the localized region.
    • 在由形成异质结构二极管的层序列组成的半导体激光器中,并且包括限定具有垂直于层的激光辐射出射面的激光有源区的基本上均匀的掺杂层,在二极管的正向流动的电流被限制到 通过提供位于层序列中的单晶层与激活区域间隔开至少一个介入的掺杂半导体层,从而提供单晶层的指向远离 活动区域,其具有基本上垂直于所述辐射出射面延伸的槽状凹部,并且经由设置有凹部的表面并朝向有源区域扩散,所述掺杂材料产生与中间掺杂的相同导电类型的掺杂区域 层,掺杂区域由基本上平行的扩散前沿界定, 到达设置有所述凹部的表面,并且被定位成在凹部下方以及凹部和所述活性区域之间的区域中提供单一导电类型的局部半导体区域,以及由扩散分开的分别相反的导电类型的半导体区域 在与局部区域相邻的区域中。
    • 5. 发明申请
    • STATOR OF AN ELECTRICAL MACHINE
    • 电机定子
    • US20130193799A1
    • 2013-08-01
    • US13817420
    • 2011-07-19
    • Peter Marschall
    • Peter Marschall
    • H02K1/18
    • H02K1/18H02K3/522H02K2203/06
    • Stator of an electrical machine are already known, having a stator lamination stack, having coil forms fastened thereto which each include an electrical coil. The coil forms are each pressed onto a tooth of the stator lamination stack, convex protuberances, which generate the dynamic compression, being provided on the teeth of the stator lamination stack. The inherent drawback here, however, is that the convex protuberances are expensive to manufacture. In the case of the stator according to the present invention, the fastening of the coil forms to the teeth of the stator lamination stack is simplified. It is provided in accordance with the present invention that at least one fastening element (9) be provided at the two end faces of the stator lamination stack (2) that includes a fastening means (10) which cooperate in a form-locking manner and/or force-locking with coil forms (6).
    • 电机的定子是已知的,具有定子叠片,具有固定到其上的线圈形式,每个线圈形式包括电线圈。 线圈形式被压在定子叠片叠层的齿上,产生动压力的凸形凸起设置在定子叠片叠层的齿上。 然而,这里的固有缺陷是凸起的凸起制造昂贵。 在根据本发明的定子的情况下,线圈形式紧固到定子叠片的齿上被简化。 根据本发明,提供了至少一个紧固元件(9)设置在定子叠片叠(2)的两个端面处,该紧固元件(9)包括紧固装置(10),该紧固装置以锁定方式协作, /或用线圈形式(6)强制锁定。
    • 6. 发明授权
    • Connecting arrangement for a fluid-conducting tube
    • 导流管的连接装置
    • US08038181B2
    • 2011-10-18
    • US12457798
    • 2009-06-22
    • Peter MarschallClaus Röck
    • Peter MarschallClaus Röck
    • F16L13/14F16L41/12
    • F16L41/086F16L39/00
    • A connecting arrangement for fluid-conducting tubes (1, 2) has a further fluid transporting component (16). The fluid-conducting tube (1, 2) has at least one collar (3, 4) facing radially outwardly which can be clamped against the further fluid transporting component (16) with the aid of a holder (5). The holder (5) has at least one U-shaped lateral receptacle (6, 7) formed by two arms (12). The predetermined length of the arms (12) is dimensioned such as to enclose more than half of the fluid-conducting tube (1, 2) during plastic deformation. The U-shaped receptacle (6, 7) has at least one relief region (13) in which holes, grooves, cavities or other material reductions are arranged. The cross section of the arms (12) changes little during deformation due to the relief regions because upset material can flow into the same.
    • 用于流体导管(1,2)的连接装置具有另外的流体输送部件(16)。 导流管(1,2)具有至少一个面向径向向外的凸缘(3,4),其可借助于保持器(5)夹紧在另一流体输送部件(16)上。 保持器(5)具有由两个臂(12)形成的至少一个U形横向容器(6,7)。 臂(12)的预定长度的尺寸被设计成在塑性变形期间包围一半以上的导液管(1,2)。 U形插座(6,7)具有至少一个浮雕区域(13),其中布置有孔,凹槽,空腔或其它材料减少。 臂(12)的横截面在由于缓冲区域的变形期间变化很小,因为镦锻材料可以流入其中。