专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050287786A1 Device and method using isotopically enriched silicon 失效
标题翻译：使用同位素富集硅的装置和方法
公开(公告)号：US20050287786A1
公开(公告)日：2005-12-29
申请号：US10875029
申请日：2004-06-23
申请人： Peter Gammel , Bailey Jones , Isik Kizilyalli , Hugo Safar
发明人： Peter Gammel , Bailey Jones , Isik Kizilyalli , Hugo Safar
IPC分类号： H01L21/20 , H01L21/322 , H01L21/336 , H01L21/4763 , H01L21/8234 , H01L21/8238 , H01L29/10 , H01L29/16 , H01L29/167 , H01L29/78
CPC分类号： H01L29/16 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/322 , H01L21/823412 , H01L21/823807 , H01L29/1033 , H01L29/167 , H01L29/6659 , H01L29/7833
摘要： The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.
摘要翻译：本发明提供一种可并入集成电路的半导体器件的制造方法。该方法包括：在基底衬底上形成同位素富集的硅的第一掺杂层，在第一掺杂层上形成同位素富集的半导体材料硅的第二层，以及在第二层上构建有源器件。该器件包括同位素富集的半导体材料的第一掺杂层和位于第一掺杂层上方的同位素富集的半导体材料的第二层以及位于第二层上的有源器件。

2. 发明申请

US20060172465A1 Device packages 有权
标题翻译：设备包
公开(公告)号：US20060172465A1
公开(公告)日：2006-08-03
申请号：US11049246
申请日：2005-02-02
申请人： John Brennan , Joseph Freund , Jeffrey Gilbert , John Osenbach , Hugo Safar
发明人： John Brennan , Joseph Freund , Jeffrey Gilbert , John Osenbach , Hugo Safar
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , B23K20/005 , H01L21/52 , H01L23/10 , H01L23/24 , H01L23/36 , H01L23/49861 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/05599 , H01L2224/4809 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/484 , H01L2224/49109 , H01L2224/78313 , H01L2224/83801 , H01L2224/85181 , H01L2224/85205 , H01L2224/85207 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/01322 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2224/78 , H01L2224/45099 , H01L2924/00
摘要： Devices such as amplifiers are built on a heat sink having a perimeter wall surrounding active electronic devices. Surprisingly formation of wire bonds to such devices tends to be degraded if they have an aspect ratio greater than 2:1. This problem is overcome by forming wire bonds before such walls have a height of 30 mils and after bond formation extending the walls to their final height.
摘要翻译：诸如放大器的装置构建在具有围绕有源电子装置的周围壁的散热器上。如果具有大于2:1的纵横比，则令这种装置的引线键的形成趋向于降低。这个问题通过在这种壁的高度为30密耳之间并且在形成壁之后延伸到其最终高度之后形成线接合来克服。

3. 发明申请

US20090152983A1 Integrated acoustic bandgap devices for energy confinement and methods of fabricating same 有权
标题翻译：用于能量限制的集成声带隙装置及其制造方法
公开(公告)号：US20090152983A1
公开(公告)日：2009-06-18
申请号：US12002524
申请日：2007-12-17
申请人： Rajarishi Sinha , Peter Ledel Gammel , Marco Mastrapasqua , Hugo Safar
发明人： Rajarishi Sinha , Peter Ledel Gammel , Marco Mastrapasqua , Hugo Safar
IPC分类号： H03H9/15 , H03H3/02
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
摘要翻译：本发明涉及包含特别适用于定时应用的振荡器元件的单片集成电路。振荡器元件包括具有设置在一对电极之间的压电材料的谐振元件。振荡器元件还包括可以设置在谐振器元件的任一侧的声学限制结构。声学限制元件包括交替的低和高声阻抗材料组。温度补偿层可以设置在压电材料和至少一个电极之间。振荡器元件通过互连与集成电路元件单片集成。振荡器元件和集成电路元件可以顺序地或同时地制造。

4. 发明申请

US20070241433A1 Semiconductor device package with base features to reduce leakage 有权
标题翻译：半导体器件封装具有基极特性，可减少泄漏
公开(公告)号：US20070241433A1
公开(公告)日：2007-10-18
申请号：US11788346
申请日：2007-04-19
申请人： Patrick Carberry , Jeffery Gilbert , George Libricz , Ralph Moyer , John Osenbach , Hugo Safar , Thomas Shilling
发明人： Patrick Carberry , Jeffery Gilbert , George Libricz , Ralph Moyer , John Osenbach , Hugo Safar , Thomas Shilling
IPC分类号： H01L23/495
CPC分类号： H01L23/49548 , H01L23/4334 , H01L23/49541 , H01L23/49861 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/01322 , H01L2924/13091 , H01L2924/14 , H01L2924/16195 , H01L2924/19041 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.
摘要翻译：半导体器件封装包括包括基底和侧壁的容器。基座被配置为支撑半导体器件芯片，并且引线框架延伸穿过至少一个侧壁。引导框架在侧壁内的一部分具有穿透引线框架的至少一个孔。侧壁材料延伸到孔中，从而形成强界面结合，其提供低泄漏侧壁引线框架界面。底座具有位于至少一个侧壁的厚度内并与至少一个侧壁接合的折入特征，从而形成低泄漏的底壁 - 侧壁界面。基座的顶表面具有凹槽，该凹槽位于至少一个侧壁的厚度内并与至少一个侧壁接合，由此增强了低泄漏的底壁 - 侧壁界面。

5. 发明申请

US20060108672A1 Die bonded device and method for transistor packages 审中-公开
标题翻译：晶体管封装的晶片结合装置和方法
公开(公告)号：US20060108672A1
公开(公告)日：2006-05-25
申请号：US10996677
申请日：2004-11-24
申请人： John Brennan , Joseph Freund , John Osenbach , Hugo Safar , Richard Shanaman
发明人： John Brennan , Joseph Freund , John Osenbach , Hugo Safar , Richard Shanaman
IPC分类号： H01L23/495 , H01L23/24 , H01L23/02
CPC分类号： H01L24/48 , H01L23/047 , H01L23/06 , H01L23/4827 , H01L23/488 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/31 , H01L24/83 , H01L2224/04026 , H01L2224/04042 , H01L2224/05556 , H01L2224/2908 , H01L2224/291 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/29166 , H01L2224/29169 , H01L2224/48091 , H01L2224/48247 , H01L2224/4847 , H01L2224/83191 , H01L2224/83801 , H01L2224/83805 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/01032 , H01L2924/01049 , H01L2224/45099 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： The specification describes a technique for die bonding that is tailored to air cavity plastic packages for high power devices. The die bonding method is simple and effective, and eliminates the step of placement of solder preforms in the die bonding operation. According to the invention the die that are to be attached are pre-coated with AuSn solder. A multifunctional bonding layer is applied between the silicon die and the AuSn bonding layer. The multifunctional bonding layer comprises a multi-layer structure including Ti/Pt/Au. The chip support member comprises copper or a copper alloy. The chip support member may also be pre-coated with a bonding layer. The pre-coated die is soldered to the chip support member.
摘要翻译：本说明书描述了针对大功率器件的空腔塑料封装而定制的芯片接合技术。芯片接合方法简单有效，并且消除了在焊接操作中放置焊料预成型件的步骤。根据本发明，待附接的模具预先涂覆有AuSn焊料。在硅片和AuSn结合层之间施加多功能结合层。多功能结合层包括包含Ti / Pt / Au的多层结构。芯片支撑构件包括铜或铜合金。芯片支撑构件也可以预先涂覆有结合层。预涂模具被焊接到芯片支撑构件。

6. 发明授权

US08564174B2 Integrated acoustic bandgap devices for energy confinement and methods of fabricating same 有权
公开(公告)号：US08564174B2
公开(公告)日：2013-10-22
申请号：US13339505
申请日：2011-12-29
申请人： Rajarishi Sinha , Peter Ledel Gammel , Marco Mastrapasqua , Hugo Safar
发明人： Rajarishi Sinha , Peter Ledel Gammel , Marco Mastrapasqua , Hugo Safar
IPC分类号： H03H9/17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

7. 发明授权

US08089195B2 Integrated acoustic bandgap devices for energy confinement and methods of fabricating same 有权
标题翻译：用于能量限制的集成声带隙装置及其制造方法
公开(公告)号：US08089195B2
公开(公告)日：2012-01-03
申请号：US12002524
申请日：2007-12-17
申请人： Rajarishi Sinha , Peter Ledel Gammel , Marco Mastrapasqua , Hugo Safar
发明人： Rajarishi Sinha , Peter Ledel Gammel , Marco Mastrapasqua , Hugo Safar
IPC分类号： H03H9/17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
摘要翻译：本发明涉及包含特别适用于定时应用的振荡器元件的单片集成电路。振荡器元件包括具有设置在一对电极之间的压电材料的谐振元件。振荡器元件还包括可以设置在谐振器元件的任一侧的声学限制结构。声学限制元件包括交替的低和高声阻抗材料组。温度补偿层可以设置在压电材料和至少一个电极之间。振荡器元件通过互连与集成电路元件单片集成。振荡器元件和集成电路元件可以顺序地或同时地制造。

8. 发明申请

US20060237826A1 Leadframe designs for plastic overmold packages 审中-公开
公开(公告)号：US20060237826A1
公开(公告)日：2006-10-26
申请号：US11455969
申请日：2006-06-20
申请人： David Boulin , Hugo Safar
发明人： David Boulin , Hugo Safar
IPC分类号： H01L23/495
CPC分类号： H01L23/49562 , H01L23/3107 , H01L2924/0002 , H01L2924/00
摘要： The specification describes a plastic overmolded package for high power devices that has a very low lead count, typically fewer than eight, and in a preferred embodiment, only two. The leads occupy essentially the same linear space as the multiple leads in a conventional package and thus have a wide-blade configuration. To improve mechanical integrity, the leads in the package are provided with retention slots to add back the equivalent of the plastic joints in the spaces that were eliminated due to the wide-blade design. The retention slots extend in the width dimension of the leads.

9. 发明申请

US20130300259A1 PROTECTED RESONATOR 审中-公开
标题翻译：保护共振器
公开(公告)号：US20130300259A1
公开(公告)日：2013-11-14
申请号：US13941619
申请日：2013-07-15
申请人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
发明人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译：一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。该结构具有至少部分地设置在两个电极之间的压电层。该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖。

10. 发明授权

US08487511B2 Protected resonator 有权
标题翻译：保护谐振器
公开(公告)号：US08487511B2
公开(公告)日：2013-07-16
申请号：US13549676
申请日：2012-07-16
申请人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
发明人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
IPC分类号： H01L41/09 , H03H9/15
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译：一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。该结构具有至少部分地设置在两个电极之间的压电层。该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式