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    • 1. 发明授权
    • Electron emission device
    • 电子发射装置
    • US07268361B2
    • 2007-09-11
    • US10483114
    • 2002-07-01
    • Pavel AdamecDieter Winkler
    • Pavel AdamecDieter Winkler
    • H01L29/06H01L21/00
    • H01J1/3044H01J2201/319
    • The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected to an emitter tip 9 made of a semiconductor material, an n-type semiconductor region 11 forming a pn-diode junction 13 with the p-type semiconductor region 7 a first electric contact 15 on the p-type semiconductor region 7 and a second electric contact 17 on the n-type semiconductor region 11. The p-type semiconductor region 7 prevents the flux of free electrons to the emitter unless electrons are injected into the p-type semiconductor region 7 by the pn-diode junction 13. This way, the field emission cathode 3 can generate an electron beam where the electron beam current is controlled by the forward biasing second voltage V2 across the pn-diode junction. Such electron beam current has an improved current value stability. In addition the electron beam current does not have to be stabilized anymore by adjusting, the voltage between emitter tip 9 and extracting electrode 5 which would interfere with the electric field of electron beam optics. The present invention further provides the field emission cathode as described above and an array of field emission cathodes. The invention further provides a method to generate at least one electron beam.
    • 本发明提供一种包括至少一个场发射阴极3和至少一个提取电极5的电子束装置1,由此场发射阴极5包括连接到由半导体材料制成的发射极尖端9的p型半导体区域7, 在p型半导体区域7上形成p型二极管结13的n型半导体区域11,p型半导体区域7上的第一电接触15和n型半导体区域11上的第二电接触17。 p型半导体区域7防止自由电子束流到发射极,除非电子被pn二极管结13注入到p型半导体区域7中。这样,场发射阴极3可以产生电子束,其中 电子束电流由跨越pn二极管结的正向偏置第二电压V 2控制。 这种电子束电流具有改善的电流值稳定性。 此外,电子束电流不必通过调节发射极尖端9和提取电极5之间的电压,这将干扰电子束光学器件的电场。 本发明还提供如上所述的场致发射阴极和场发射阴极阵列。 本发明还提供了一种产生至少一个电子束的方法。
    • 4. 发明授权
    • Multiple electron beam device
    • 多电子束装置
    • US07282711B2
    • 2007-10-16
    • US10491939
    • 2002-10-04
    • Dieter WinklerPavel AdamecAchim GöhlHelmut Banzhof
    • Dieter WinklerPavel AdamecAchim GöhlHelmut Banzhof
    • H01J37/21
    • H01J37/28B82Y10/00B82Y40/00H01J37/21H01J37/304H01J37/3174H01J2237/216H01J2237/2446H01J2237/2826H01J2237/30433H01J2237/3045
    • The invention provides electron multiple beam devices (1) for probing or structuring a non-transparent specimen (20) with primary electron beams (14) with an array of electron beam sources (3) to generate multiple primary electron beams (14), an electron sensor (12) with electron sensor segments (12a) to detect electrons of the primary electron beams (14) and at least one anode (7) to direct the primary electron beams (14) towards the electron sensor (12). The electron sensor (12) serves to inspect the primary electron beams (14), calibrate the positions of the primary electron beams (14) and possibly adjust final focus length (13) and currents of the primary electron beams before or after a probing or structuring the upper surface (20a) of a non-transparent specimens (20). Further, methods to inspect primary electron beams (14), to adjust final focus lengths (13) and to calibrate the multiple electron beam device (1) are provided.
    • 本发明提供了用于用具有电子束源阵列(3)的一次电子束(14)探测或构造非透明样品(20)以产生多个一次电子束(14)的电子多光束装置(1), 电子传感器(12),其具有用于检测一次电子束(14)的电子和至少一个阳极(7)的电子传感器段(12a),以将一次电子束(14)引向电子传感器(12)。 电子传感器(12)用于检查一次电子束(14),校准一次电子束(14)的位置,并可能在探测之前或之后校准一次电子束的最终聚焦长度(13)和电流 构造不透明样品(20)的上表面(20a)。 此外,提供了检查一次电子束(14),调整最终聚焦长度(13)和校准多个电子束装置(1)的方法。
    • 6. 发明授权
    • Device and method for controlling focussed electron beams
    • 用于控制聚焦电子束的装置和方法
    • US06943507B2
    • 2005-09-13
    • US10474464
    • 2002-04-08
    • Dieter WinklerPavel Adamec
    • Dieter WinklerPavel Adamec
    • H01J37/073H01J37/304H01J29/52
    • H01J37/073H01J37/304H01J2237/06316H01J2237/0635H01J2237/31774
    • The invention provides a focussing electron beam device with a single or an array of field emitter beam sources to generate electron beams with field emitter beam sources, at least one anode capable of accelerating the electrons of the electron beams towards a specimen, focussing components capable of focussing the electron beams onto the specimen and a control circuit that a) senses for deviations of the actual current values of the electron beams from desired current values; b) controls first voltages V1 to adjust the actual current values of the electron beams to the desired current values and c) controls second voltages V2 to adjust the actual focus positions of the electron beams to the desired focus positions. The voltage control circuit adjusts the actual current values of the electron beams to the desired current values and makes it possible to adjust the current values of an array of electron beams to a single value. Furthermore, a focussing electron beam device is disclosed with an array of field emitter beam sources integrated onto a substrate, which makes it possible to have arrays of field emitter beam sources with thousands or even millions of field emitter beam sources. With the integration of the control circuits for each field emitter beam source it is possible to adjust the current values and focus positions of each electron beam individually. Furthermore, methods are disclosed describing the operation of a single field emitter beam source or an array of field emitter beam sources.
    • 本发明提供一种聚焦电子束装置,其具有单个或阵列的场致发射束源,以产生具有场致发射束源的电子束,至少一个阳极,能够将电子束的电子加速朝向检体, 将电子束聚焦到样本上,以及控制电路,其a)感测电子束的实际电流值与期望电流值的偏差; b)控制第一电压V 1以将电子束的实际电流值调整到期望的电流值,并且c)控制第二电压V 2以将电子束的实际焦点位置调整到期望的焦点位置。 电压控制电路将电子束的实际电流值调整到期望的电流值,并且可以将电子束阵列的电流值调整为单个值。 此外,公开了一种聚焦电子束器件,其集成在衬底上的场发射器束源的阵列,这使得可以具有数千甚至数百万场发射器束源的场发射器束源的阵列。 通过对每个场发射器束源的控制电路的集成,可以单独地调整每个电子束的电流值和聚焦位置。 此外,公开了描述单个场发射器束源或场发射器束源的阵列的操作的方法。
    • 8. 发明授权
    • Multi beam charged particle device
    • 多光束带电粒子装置
    • US06943349B2
    • 2005-09-13
    • US10258869
    • 2001-04-27
    • Pavel AdamecRalf DegenhardtHans-Peter FeuerbaumHarry MunackDieter Winkler
    • Pavel AdamecRalf DegenhardtHans-Peter FeuerbaumHarry MunackDieter Winkler
    • G01Q30/02H01J37/04H01J37/09H01J37/26G21K1/08G01N23/00H01J3/14H01J37/28
    • H01J37/04H01J37/09H01J37/266
    • The present invention provides an improved column for a charged particle beam device. The column comprises an aperture plate having multiple apertures to produce multiple beams of charged particles and a deflector to influence the beams of charged particles so that each beam appears to come from a different source. Furthermore, an objective lens is used in order to focus the charged-particle beams onto the specimen. Due to the deflector, multiple images of the source are created on the surface of the specimen whereby all the images can be used for parallel data acquisition. Accordingly, the speed of data acquisition is increased. With regard to the focusing properties of the objective lens, the beams of charged particles can basically be treated as independent particle beams which do not negatively affect each other. Accordingly, each beam basically provides the same resolution as the beam of a conventional charged particle beam device.
    • 本发明提供了一种用于带电粒子束装置的改进的柱。 柱包括具有多个孔的孔板,以产生多个带电粒子束和偏转器,以影响带电粒子束,使得每个束似乎来自不同的源。 此外,使用物镜以将带电粒子束聚焦到样本上。 由于偏转器,在样品的表面上产生了源的多个图像,从而所有图像可以用于并行数据采集。 因此,数据采集的速度增加。 关于物镜的聚焦特性,带电粒子束基本上可以被视为不会相互影响的独立的粒子束。 因此,每个光束基本上提供与常规带电粒子束装置的光束相同的分辨率。