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1. 发明申请

US20100187650A1 INSULATED WELL WITH A LOW STRAY CAPACITANCE FOR ELECTRONIC COMPONENTS 审中-公开
标题翻译：绝缘良好，电子元件的低电阻电容
公开(公告)号：US20100187650A1
公开(公告)日：2010-07-29
申请号：US12690717
申请日：2010-01-20
申请人： Patrick Poveda , Benjamin Morillon , Erwan Bruno
发明人： Patrick Poveda , Benjamin Morillon , Erwan Bruno
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76264 , H01L27/0814
摘要： A structure including at least one electronic component formed in a semiconductor stack comprising a heavily-doped buried silicon layer of a first conductivity type extending on a lightly-doped silicon substrate of a second conductivity type and a vertical insulating trench surrounding the component. The trench penetrates, into the silicon substrate, under the silicon layer, down to a depth greater than the thickness of the space charge region in the silicon substrate.
摘要翻译：包括形成在半导体堆叠中的至少一个电子部件的结构，包括在第二导电类型的轻掺杂硅衬底上延伸的第一导电类型的重掺杂掩埋硅层和围绕该部件的垂直绝缘沟槽。沟槽在硅层之下穿入硅衬底，直到深度大于硅衬底中的空间电荷区的厚度。

2. 发明授权

US07820494B2 Forming of the periphery of a schottky diode with MOS trenches 有权
标题翻译：形成具有MOS沟槽的肖特基二极管的外围
公开(公告)号：US07820494B2
公开(公告)日：2010-10-26
申请号：US11713543
申请日：2007-03-02
申请人： Patrick Poveda
发明人： Patrick Poveda
IPC分类号： H01L21/338
CPC分类号： H01L29/402 , H01L29/407 , H01L29/66143 , H01L29/806 , H01L29/872 , H01L29/8725
摘要： A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, including the steps of depositing on a semiconductor substrate a thick layer of a first insulating material and a thin layer of a second material; simultaneously digging a peripheral trench and the trenches of the component; isotropically etching the first material so that a cap overhanging a recess remains; forming a thin insulating layer; and filling the trenches and said recess with a conductive material.
摘要翻译：一种用于形成其外围由填充有导体的绝缘壁形成沟槽的TMBS型的部件的方法，包括以下步骤：在半导体衬底上沉积厚层的第一绝缘材料和第二材料的薄层; 同时挖掘周边沟槽和部件的沟槽; 各向同性蚀刻第一材料，使得悬挂在凹部上的盖保留; 形成薄的绝缘层; 并用导电材料填充沟槽和凹槽。

3. 发明申请

US20070222018A1 Forming of the periphery of a schottky diode with MOS trenches 有权
标题翻译：形成具有MOS沟槽的肖特基二极管的外围
公开(公告)号：US20070222018A1
公开(公告)日：2007-09-27
申请号：US11713543
申请日：2007-03-02
申请人： Patrick Poveda
发明人： Patrick Poveda
IPC分类号： H01L27/00
CPC分类号： H01L29/402 , H01L29/407 , H01L29/66143 , H01L29/806 , H01L29/872 , H01L29/8725
摘要： A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, including the steps of depositing on a semiconductor substrate a thick layer of a first insulating material and a thin layer of a second material; simultaneously digging a peripheral trench and the trenches of the component; isotropically etching the first material so that a cap overhanging a recess remains; forming a thin insulating layer; and filling the trenches and said recess with a conductive material.
摘要翻译：一种用于形成其外围由填充有导体的绝缘壁形成沟槽的TMBS型的部件的方法，包括以下步骤：在半导体衬底上沉积厚层的第一绝缘材料和第二材料的薄层; 同时挖掘周边沟槽和部件的沟槽; 各向同性蚀刻第一材料，使得悬挂在凹部上的盖保留; 形成薄的绝缘层; 并用导电材料填充沟槽和凹槽。

4. 发明授权

US06924546B2 Low-capacity vertical diode 有权
标题翻译：低容量立式二极管
公开(公告)号：US06924546B2
公开(公告)日：2005-08-02
申请号：US10489153
申请日：2002-09-10
申请人： Emmanuel Collard , Patrick Poveda
发明人： Emmanuel Collard , Patrick Poveda
IPC分类号： H01L29/861 , H01L29/868 , H01L31/105
CPC分类号： H01L29/868 , H01L29/8613
摘要： The invention concerns a low-capacity vertical diode designed to be mounted by a front surface made in a semiconductor substrate (1), comprising a first zone projecting relative to the surface of the substrate including at least a semiconductor layer (3) doped with a type of conductivity opposite to that of the substrate, the upper surface of the semiconductor layer bearing a first solder bump (23). The diode comprises a second zone including on the substrate a thick strip conductor (16) bearing at least second solder bumps (24), said first and second solder bumps defining a plane parallel to the substrate plane.
摘要翻译：本发明涉及一种设计成由半导体衬底（1）制成的前表面安装的低容量垂直二极管，包括相对于衬底的表面突出的第一区域，该第一区域包括至少掺杂有半导体衬底的半导体层（3）类型的导电性与衬底的导电性相反，半导体层的上表面具有第一焊料凸点（23）。所述二极管包括第二区域，所述第二区域在所述衬底上具有承载至少第二焊料凸块（24）的厚条状导体（16），所述第一和第二焊料凸块限定平行于所述衬底平面的平面。

5. 发明授权

US07589602B2 Antenna switch module 有权
标题翻译：天线开关模块
公开(公告)号：US07589602B2
公开(公告)日：2009-09-15
申请号：US11490740
申请日：2006-07-21
申请人： Patrick Poveda , Francois Dupont
发明人： Patrick Poveda , Francois Dupont
IPC分类号： H01P1/10 , H01P5/12 , H04B1/44 , H04B1/46
CPC分类号： H04B1/005 , H04B1/406 , H04B1/48
摘要： An antenna switch module between several radio-frequency transmit and/or receive paths including, between a common terminal on the antenna side and an access capacitor specific to each path, at least one diode, the number of diodes directly connected to the common terminal being odd and the number of diodes having their cathode on the common terminal side being equal, with a difference of one, to the number of diodes having their anode on the common terminal side.
摘要翻译：在几个射频发射和/或接收路径之间的天线切换模块，包括在天线侧的公共终端和每个路径专用的接入电容器之间，至少一个二极管，直接连接到公共端子的二极管的数量为奇数，在公共端子侧具有阴极的二极管的数量与公共端子侧的具有阳极的二极管的数量相差1。

6. 发明申请

US20060037998A1 Thermally-controlled actuator device 审中-公开
标题翻译：热控致动器装置
公开(公告)号：US20060037998A1
公开(公告)日：2006-02-23
申请号：US11256508
申请日：2005-10-21
申请人： Stephane Crabol , Guy Valembois , Patrick Poveda
发明人： Stephane Crabol , Guy Valembois , Patrick Poveda
IPC分类号： B23K31/02
CPC分类号： B64G1/645 , B64G1/222
摘要： The present invention relates to a thermally-controlled actuator device of the type comprising a body, a part held stationary relative to the body by a low-melting point connection material, e.g. brazing or equivalent means, and a mass of exothermic material suitable for acting on command to give off intense heat energy suitable for melting the connection material so as to release the part relative to the body, wherein the exothermic material is housed in a chamber that is subdivided into a plurality of compartments suitable for confining said material in close thermal contact with the wall of the chamber.
摘要翻译：本发明涉及一种热控致动器装置，其类型包括主体，通过低熔点连接材料相对于主体保持固定的部分，例如，钎焊或等效装置，以及大量放热材料，其适于作用于发出适于熔化连接材料的强热能，以便相对于主体释放该部件，其中放热材料容纳在室细分成多个适合于限制所述材料与室的壁紧密热接触的隔室。

7. 发明申请

US20050242363A1 Low-capacity vertical diode 有权
标题翻译：低容量立式二极管
公开(公告)号：US20050242363A1
公开(公告)日：2005-11-03
申请号：US11159991
申请日：2005-06-23
申请人： Emmanuel Collard , Patrick Poveda
发明人： Emmanuel Collard , Patrick Poveda
IPC分类号： H01L29/861 , H01L29/868 , H01L29/22
CPC分类号： H01L29/868 , H01L29/8613
摘要： A vertical diode of low capacitance formed in a front surface of a semiconductor substrate, including a first area protruding from the substrate surface including at least one doped semiconductor layer of a conductivity type opposite to that of the substrate, the upper surface of the semiconductor layer supporting a first welding ball. The diode includes a second area including on the substrate a thick conductive track supporting at least two second welding balls, said first and second welding balls defining a plane parallel to the substrate plane.
摘要翻译：一种低电容的垂直二极管，其形成在半导体衬底的前表面中，包括从衬底表面突出的第一区域，该第一区域包括至少一个与衬底相反的导电类型的掺杂半导体层，半导体层的上表面支持第一焊球。二极管包括第二区域，该第二区域包括在基板上的支撑至少两个第二焊球的厚导电轨道，所述第一焊球和第二焊球限定平行于衬底平面的平面。

8. 发明申请

US20050073373A1 Integrated coupler 有权
标题翻译：集成耦合器
公开(公告)号：US20050073373A1
公开(公告)日：2005-04-07
申请号：US10949941
申请日：2004-09-24
申请人： Francois Dupont , Patrick Poveda
发明人： Francois Dupont , Patrick Poveda
IPC分类号： H01L21/822 , H01L27/04 , H03H7/48 , H01P5/12
CPC分类号： H03H7/487
摘要： A non-directional coupler including a semiconductor junction in series with a capacitor, the semiconductor junction being formed so that the threshold frequency short of which it behaves as a rectifier is smaller than the coupler's operating frequency.
摘要翻译：包括与电容器串联的半导体结的非定向耦合器，形成半导体结，使得其作为整流器行为的阈值频率小于耦合器的工作频率。

9. 发明授权

US08269252B2 Structure of high-frequency components with low stray capacitances 有权
标题翻译：具有低杂散电容的高频分量的结构
公开(公告)号：US08269252B2
公开(公告)日：2012-09-18
申请号：US12059600
申请日：2008-03-31
申请人： Jean-Michel Simonnet , André Lhorte , Patrick Poveda
发明人： Jean-Michel Simonnet , André Lhorte , Patrick Poveda
IPC分类号： H01L29/72
CPC分类号： H01L29/8611 , H01L21/76264 , H01L27/0251 , H01L27/0814 , H01L27/1203 , H01L29/06
摘要： A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
摘要翻译：包括至少两个能够以高频工作的相邻部件的结构形成在硅衬底上延伸并且由绝缘层分离的薄硅衬底中，所述部件被绝缘区横向隔开。硅载体至少在与绝缘层接触的部分附近具有大于或等于1,000欧姆·厘米的电阻率。

10. 发明申请

US20080237785A1 STRUCTURE OF HIGH-FREQUENCY COMPONENTS WITH LOW STRAY CAPACITANCES 有权
标题翻译：具有低电流电容的高频部件的结构
公开(公告)号：US20080237785A1
公开(公告)日：2008-10-02
申请号：US12059600
申请日：2008-03-31
申请人： Jean-Michel Simonnet , Andre Lhorte , Patrick Poveda
发明人： Jean-Michel Simonnet , Andre Lhorte , Patrick Poveda
IPC分类号： H01L27/02
CPC分类号： H01L29/8611 , H01L21/76264 , H01L27/0251 , H01L27/0814 , H01L27/1203 , H01L29/06
摘要： A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
摘要翻译：包括至少两个能够以高频工作的相邻部件的结构形成在硅衬底上延伸并且由绝缘层分离的薄硅衬底中，所述部件被绝缘区横向隔开。硅载体至少在与绝缘层接触的部分附近具有大于或等于1,000欧姆·厘米的电阻率。

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