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1. 发明申请

US20100187650A1 INSULATED WELL WITH A LOW STRAY CAPACITANCE FOR ELECTRONIC COMPONENTS 审中-公开
标题翻译：绝缘良好，电子元件的低电阻电容
公开(公告)号：US20100187650A1
公开(公告)日：2010-07-29
申请号：US12690717
申请日：2010-01-20
申请人： Patrick Poveda , Benjamin Morillon , Erwan Bruno
发明人： Patrick Poveda , Benjamin Morillon , Erwan Bruno
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76264 , H01L27/0814
摘要： A structure including at least one electronic component formed in a semiconductor stack comprising a heavily-doped buried silicon layer of a first conductivity type extending on a lightly-doped silicon substrate of a second conductivity type and a vertical insulating trench surrounding the component. The trench penetrates, into the silicon substrate, under the silicon layer, down to a depth greater than the thickness of the space charge region in the silicon substrate.
摘要翻译：包括形成在半导体堆叠中的至少一个电子部件的结构，包括在第二导电类型的轻掺杂硅衬底上延伸的第一导电类型的重掺杂掩埋硅层和围绕该部件的垂直绝缘沟槽。沟槽在硅层之下穿入硅衬底，直到深度大于硅衬底中的空间电荷区的厚度。

2. 发明申请

US20110121429A1 LOW-VOLTAGE BIDIRECTIONAL PROTECTION DIODE 有权
标题翻译：低电压双向保护二极管
公开(公告)号：US20110121429A1
公开(公告)日：2011-05-26
申请号：US12946992
申请日：2010-11-16
申请人： Benjamin Morillon
发明人： Benjamin Morillon
IPC分类号： H01L29/866 , H01L21/329
CPC分类号： H01L29/8618 , H01L29/6609 , H01L29/66106 , H01L29/866
摘要： A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types, these regions all having a doping level greater than from 2 to 5×1019 atoms/cm3 and being laterally delimited by an insulated trench, each of these regions having a thickness smaller than 4 μm.
摘要翻译：垂直双向保护二极管包括在第一导电类型的重掺杂衬底上的第一，第二和第一导电类型的第一，第二和第三区域，这些区域都具有大于2至5的掺杂水平 ×1019原子/ cm3，并且由绝缘沟槽横向界定，这些区域中的每一个具有小于4μm的厚度。

3. 发明申请

US20120068223A1 BIDIRECTIONAL PROTECTION COMPONENT 有权
标题翻译：双向保护组件
公开(公告)号：US20120068223A1
公开(公告)日：2012-03-22
申请号：US13105238
申请日：2011-05-11
申请人： Benjamin Morillon
发明人： Benjamin Morillon
IPC分类号： H01L23/58 , H01L21/20
CPC分类号： H01L29/861 , H01L29/0638 , H01L29/0649 , H01L29/32 , H01L29/66098 , H01L2224/06181
摘要： A bidirectional protection component formed in a semiconductor substrate of a first conductivity type including a first implanted area of the first conductivity type, an epitaxial layer of the second conductivity type on the substrate and the first implanted area, a second area of the first conductivity type on the external side of the epitaxial layer, in front of the first area, and implanted with the same dose as the first area, a first metallization covering the entire lower surface of the substrate, and a second metallization covering the second area.
摘要翻译：形成在第一导电类型的半导体衬底中的双向保护部件，包括第一导电类型的第一注入区域，在衬底上的第二导电类型的外延层和第一注入区域，第一导电类型的第二区域在外延层的外侧，在第一区域的前方，并以与第一区域相同的剂量注入覆盖基板的整个下表面的第一金属化和覆盖第二区域的第二金属化。

4. 发明授权

US08975661B2 Asymmetrical bidirectional protection component 有权
标题翻译：不对称双向保护组件
公开(公告)号：US08975661B2
公开(公告)日：2015-03-10
申请号：US13210782
申请日：2011-08-16
申请人： Benjamin Morillon
发明人： Benjamin Morillon
IPC分类号： H01L29/66 , H01L29/861 , H01L29/06 , H01L29/32
CPC分类号： H01L29/66098 , H01L29/0638 , H01L29/0649 , H01L29/32 , H01L29/861 , Y10S438/983
摘要： An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.
摘要翻译：形成在第一导电类型的半导体衬底中的不对称双向保护部件，包括：第一导电类型的第一注入区域; 所述第二导电类型的第一外延层在所述衬底和所述第一注入区上; 所述第二导电类型的第二外延层在所述第一外延层上，所述第二层具有不同于所述第一层的掺杂水平; 所述第一导电类型的第二区域在所述外延层的外表面上与所述第一区域相对; 第一金属化覆盖基板的整个下表面; 以及覆盖所述第二区域的第二金属化。

5. 发明授权

US08604515B2 Bidirectional protection component 有权
标题翻译：双向保护组件
公开(公告)号：US08604515B2
公开(公告)日：2013-12-10
申请号：US13105238
申请日：2011-05-11
申请人： Benjamin Morillon
发明人： Benjamin Morillon
IPC分类号： H01L29/66
CPC分类号： H01L29/861 , H01L29/0638 , H01L29/0649 , H01L29/32 , H01L29/66098 , H01L2224/06181
摘要： A bidirectional protection component formed in a semiconductor substrate of a first conductivity type including a first implanted area of the first conductivity type, an epitaxial layer of the second conductivity type on the substrate and the first implanted area, a second area of the first conductivity type on the external side of the epitaxial layer, in front of the first area, and implanted with the same dose as the first area, a first metallization covering the entire lower surface of the substrate, and a second metallization covering the second area.
摘要翻译：形成在第一导电类型的半导体衬底中的双向保护部件，包括第一导电类型的第一注入区域，在衬底上的第二导电类型的外延层和第一注入区域，第一导电类型的第二区域在外延层的外侧，在第一区域的前方，并以与第一区域相同的剂量注入覆盖基板的整个下表面的第一金属化和覆盖第二区域的第二金属化。

6. 发明授权

US08536682B2 Low-voltage bidirectional protection diode 有权
标题翻译：低压双向保护二极管
公开(公告)号：US08536682B2
公开(公告)日：2013-09-17
申请号：US12946992
申请日：2010-11-16
申请人： Benjamin Morillon
发明人： Benjamin Morillon
IPC分类号： H01L29/861
CPC分类号： H01L29/8618 , H01L29/6609 , H01L29/66106 , H01L29/866
摘要： A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types, these regions all having a doping level greater than from 2 to 5×1019 atoms/cm3 and being laterally delimited by an insulated trench, each of these regions having a thickness smaller than 4 μm.
摘要翻译：垂直双向保护二极管包括在第一导电类型的重掺杂衬底上的第一，第二和第一导电类型的第一，第二和第三区域，这些区域都具有大于2至5的掺杂水平 ×1019个原子/ cm3，并且由绝缘沟槽横向限定，这些区域中的每一个具有小于4μm的厚度。

7. 发明申请

US20120061803A1 ASYMMETRICAL BIDIRECTIONAL PROTECTION COMPONENT 有权
标题翻译：不对称双向保护组件
公开(公告)号：US20120061803A1
公开(公告)日：2012-03-15
申请号：US13210782
申请日：2011-08-16
申请人： Benjamin Morillon
发明人： Benjamin Morillon
IPC分类号： H01L29/866 , H01L21/329
CPC分类号： H01L29/66098 , H01L29/0638 , H01L29/0649 , H01L29/32 , H01L29/861 , Y10S438/983
摘要： An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first to area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.
摘要翻译：形成在第一导电类型的半导体衬底中的不对称双向保护部件，包括：第一导电类型的第一注入区域; 所述第二导电类型的第一外延层在所述衬底和所述第一注入区上; 所述第二导电类型的第二外延层在所述第一外延层上，所述第二层具有不同于所述第一层的掺杂水平; 所述第一导电类型的第二区域在所述外延层的外表面上与所述第一区域相对; 第一金属化覆盖基板的整个下表面; 以及覆盖所述第二区域的第二金属化。

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