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    • 5. 发明授权
    • Method of manufacturing pressure microsensors
    • 制造压力传感器的方法
    • US06527961B1
    • 2003-03-04
    • US09033467
    • 1998-03-02
    • Benedetto VignaPaolo FerrariPietro MontaniniMarco Ferrera
    • Benedetto VignaPaolo FerrariPietro MontaniniMarco Ferrera
    • C23F100
    • G01L9/0054G01L9/0055
    • A method for the formation of a region of silicon dioxide on a substrate of monocrystalline silicon. The epitaxial growth of a silicon layer, the opening of holes in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes until a silicon diaphragm, attached to the substrate along the edges and separated therefrom by a space, is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes to have diameters smaller than the thickness of the diaphragm and to be closed by the formation of a silicon dioxide layer by vapor-phase deposition at atmospheric pressure.
    • 一种在单晶硅衬底上形成二氧化硅区域的方法。 硅层的外延生长,在二氧化硅区域上方的硅层中的孔的开放,以及通过孔的化学侵蚀去除构成该区域的二氧化硅,直到连接到衬底的硅隔膜 沿着边缘并与之隔开一个空间。 为了形成绝对压力微传感器,必须密封空间。 为此,该方法提供的孔具有小于隔膜厚度的直径,并且通过在大气压下气相沉积形成二氧化硅层来封闭孔。