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1. 发明授权

US06893893B2 Method of preventing short circuits in magnetic film stacks 失效
标题翻译：防止磁性薄膜堆叠短路的方法
公开(公告)号：US06893893B2
公开(公告)日：2005-05-17
申请号：US10235100
申请日：2002-09-04
申请人： Padmapani C. Nallan , Ajay Kumar , Jeng H. Hwang , Guangxiang Jin , Ralph Kerns
发明人： Padmapani C. Nallan , Ajay Kumar , Jeng H. Hwang , Guangxiang Jin , Ralph Kerns
IPC分类号： H01L21/00 , H01L23/00 , H01L43/12
CPC分类号： H01L23/564 , H01L21/67069 , H01L43/12 , H01L2924/0002 , H01L2924/00
摘要： A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.
摘要翻译：一种用于防止多层磁性膜堆叠中的电短路的方法包括提供包括具有暴露表面的磁性材料层的膜堆叠。保护层沉积在磁性层的暴露表面上。保护层可以包括例如碳氟化合物或氢氟烃。蚀刻薄膜叠层并且保护层保护暴露的表面免受在蚀刻薄膜叠层时产生的导电残留物。该方法可以用于膜堆叠中以形成磁阻随机存取存储器（MRAM）装置。

2. 发明授权

US06806095B2 Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers 失效
标题翻译：高K电介质材料的等离子体蚀刻方法，具有对底层的高选择性
公开(公告)号：US06806095B2
公开(公告)日：2004-10-19
申请号：US10092795
申请日：2002-03-06
申请人： Padmapani C. Nallan , Guangxiang Jin , Ajay Kumar
发明人： Padmapani C. Nallan , Guangxiang Jin , Ajay Kumar
IPC分类号： H01L2100
CPC分类号： H01L21/31116 , H01L21/31122
摘要： A method of etching high dielectric constant materials using halogen gas and reducing gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 200 sccm of carbon monoxide, regulated to a total chamber pressure of 2-100 mTorr to etch a hafnium oxide layer.
摘要翻译：使用卤素气体蚀刻高介电常数材料并减少气体化学的方法。该方法的一个实施方案是使用20至300sccm的氯和2至200sccm的一氧化碳来实现，调节至总室压力为2-100mTorr以蚀刻氧化铪层。

3. 发明授权

US07217665B2 Method of plasma etching high-K dielectric materials with high selectivity to underlying layers 失效
标题翻译：等离子体蚀刻高K电介质材料的方法，具有对底层的高选择性
公开(公告)号：US07217665B2
公开(公告)日：2007-05-15
申请号：US10301239
申请日：2002-11-20
申请人： Padmapani C. Nallan , Guangxiang Jin , Ajay Kumar
发明人： Padmapani C. Nallan , Guangxiang Jin , Ajay Kumar
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31122
摘要： A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas.
摘要翻译：一种等离子体蚀刻具有大于四（4）的介电常数的介电材料层的方法。该方法包括将介电材料层暴露于包含烃气体和含卤素气体的等离子体。

4. 发明授权

US06767824B2 Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask 失效
公开(公告)号：US06767824B2
公开(公告)日：2004-07-27
申请号：US10338251
申请日：2003-01-06
申请人： Padmapani C. Nallan , Ajay Kumar , Guangxiang Jin , Wei Liu
发明人： Padmapani C. Nallan , Ajay Kumar , Guangxiang Jin , Wei Liu
IPC分类号： H01L214763
CPC分类号： H01L21/31144 , H01L21/0273 , H01L21/28123 , H01L21/31122 , H01L21/31138 , H01L21/32137 , H01L21/32139 , Y10S438/945
摘要： A method of fabricating a gate structure of a field effect transistor comprising processes of forming an &agr;-carbon mask and plasma etching a gate electrode and a gate dielectric using the &agr;-carbon mask. In one embodiment, the gate dielectric comprises hafnium dioxide.

5. 发明申请

US20070077767A1 METHOD OF PLASMA ETCHING OF HIGH-K DIELECTRIC MATERIALS 有权
标题翻译：高K电介质材料等离子体蚀刻方法
公开(公告)号：US20070077767A1
公开(公告)日：2007-04-05
申请号：US11464276
申请日：2006-08-14
申请人： Guangxiang Jin , Padmapani Nallan , Ajay Kumar
发明人： Guangxiang Jin , Padmapani Nallan , Ajay Kumar
IPC分类号： C23F1/00 , H01L21/302 , C03C15/00
CPC分类号： H01L21/31122
摘要： A method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry.
摘要翻译：使用卤素气体，还原气体和蚀刻速率控制气体化学法蚀刻高介电常数材料的方法。

6. 发明授权

US07838434B2 Method of plasma etching of high-K dielectric materials 有权
标题翻译：高K电介质材料等离子体蚀刻方法
公开(公告)号：US07838434B2
公开(公告)日：2010-11-23
申请号：US11464276
申请日：2006-08-14
申请人： Guangxiang Jin , Padmapani Nallan , Ajay Kumar
发明人： Guangxiang Jin , Padmapani Nallan , Ajay Kumar
IPC分类号： H01L21/302
CPC分类号： H01L21/31122
摘要： A method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry.
摘要翻译：使用卤素气体，还原气体和蚀刻速率控制气体化学法蚀刻高介电常数材料的方法。

7. 发明申请

US20060060565A9 Method of etching metals with high selectivity to hafnium-based dielectric materials 审中-公开
标题翻译：以铪基电介质材料高选择性蚀刻金属的方法
公开(公告)号：US20060060565A9
公开(公告)日：2006-03-23
申请号：US10418994
申请日：2003-04-17
申请人： Padmapani Nallan , Ajay Kumar , Guangxiang Jin
发明人： Padmapani Nallan , Ajay Kumar , Guangxiang Jin
IPC分类号： C23F1/00 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01L21/31116 , C23F4/00 , H01L21/32137
摘要： A method of plasma etching a metal layer (e.g., titanium (Ti), tantalum (Ta), tungsten (W), and the like) or a metal-containing layer (e.g., tantalum silicon nitride (TaSiN), titanium nitride (TiN), tungsten nitride (WN), and the like) formed on a hafnium-based dielectric material is disclosed. The metal/metal-containing layer is etched using a gas mixture comprising a halogen-containing gas and a fluorine-containing gas. The fluorine within the gas mixture provides a high etch selectivity for the hafnium-based dielectric material.
摘要翻译：金属层（例如钛（Ti），钽（Ta），钨（W）等）等等离子体蚀刻或金属含有层（例如，钽氮化硅（TaSiN），氮化钛），氮化钨（WN）等）形成在铪基电介质材料上。使用包含含卤素气体和含氟气体的气体混合物来蚀刻含金属/含金属层。气体混合物中的氟提供了对铪基电介质材料的高蚀刻选择性。

8. 发明授权

US07094704B2 Method of plasma etching of high-K dielectric materials 有权
公开(公告)号：US07094704B2
公开(公告)日：2006-08-22
申请号：US10143397
申请日：2002-05-09
申请人： Guangxiang Jin , Padmapani Nallan , Ajay Kumar
发明人： Guangxiang Jin , Padmapani Nallan , Ajay Kumar
IPC分类号： H01L21/302
CPC分类号： H01L21/31122
摘要： A method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry.

9. 发明授权

US06692903B2 Substrate cleaning apparatus and method 有权
标题翻译：基板清洗装置及方法
公开(公告)号：US06692903B2
公开(公告)日：2004-02-17
申请号：US09737373
申请日：2000-12-13
申请人： Haojiang Chen , James S. Papanu , Mark Kawaguchi , Harald Herchen , Jeng H. Hwang , Guangxiang Jin , David Palagashvili
发明人： Haojiang Chen , James S. Papanu , Mark Kawaguchi , Harald Herchen , Jeng H. Hwang , Guangxiang Jin , David Palagashvili
IPC分类号： G03F736
CPC分类号： H01L21/02071 , G03F7/427 , H01L21/32136
摘要： A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 from the substrate 30. To enhance the cleaning process, the substrate 30 may be treated before, during or after the cleaning process by exposing the substrate 30 to an energized treating gas comprising a halogen species.
摘要翻译：处理衬底30的方法包括将衬底30暴露于通电工艺气体以蚀刻衬底30上的特征67，并将衬底30暴露于通电的清洁气体以从衬底30去除蚀刻剂残留物70和/或残余抗蚀剂60 为了增强清洁过程，可以在清洁过程之前，之中或之后对衬底30进行处理，通过将衬底30暴露于包含卤素物质的通电处理气体中。

10. 发明授权

US07368394B2 Etch methods to form anisotropic features for high aspect ratio applications 失效
标题翻译：蚀刻方法来形成高纵横比应用的各向异性特征
公开(公告)号：US07368394B2
公开(公告)日：2008-05-06
申请号：US11363834
申请日：2006-02-27
申请人： Meihua Shen , Uwe Leucke , Guangxiang Jin , Xikun Wang , Wei Liu , Scott Williams
发明人： Meihua Shen , Uwe Leucke , Guangxiang Jin , Xikun Wang , Wei Liu , Scott Williams
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/76802 , H01L21/32137 , H01L21/76814
摘要： Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.
摘要翻译：在本发明中提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。本文描述的方法通过侧壁钝化管理方案有利地促进具有高纵横比的特征的轮廓和尺寸控制。在一个实施例中，通过在蚀刻层的侧壁和/或底部选择性地形成氧化钝化层来管理侧壁钝化。在另一个实施例中，通过周期性地清除覆盖层再沉积层以在其上保持均匀且均匀的钝化层来管理侧壁钝化。均匀和均匀的钝化允许以在衬底上的高和低特征密度区域中具有临界尺寸的期望深度和垂直分布的方式来逐渐蚀刻具有高纵横比的特征，而不产生缺陷和/或过蚀刻下面层。

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