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1. 发明申请

US20120168695A2 GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL 有权
标题翻译：第三类元素氮化物晶体生产方法和第三类元素氮化物晶体
公开(公告)号：US20120168695A2
公开(公告)日：2012-07-05
申请号：US12524811
申请日：2008-03-05
申请人： Osamu YAMADA , Hisashi MINEMOTO , Kouichi HIRANAKA , Takeshi HATAKEYAMA , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA , Yasuo KITAOKA
发明人： Osamu YAMADA , Hisashi MINEMOTO , Kouichi HIRANAKA , Takeshi HATAKEYAMA , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA , Yasuo KITAOKA
IPC分类号： H01B1/06 , C30B17/00 , C01B21/06
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

2. 发明申请

US20110012070A2 GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL 有权
标题翻译：第三类元素氮化物晶体生产方法和第三类元素氮化物晶体
公开(公告)号：US20110012070A2
公开(公告)日：2011-01-20
申请号：US12524811
申请日：2009-07-28
申请人： Osamu YAMADA , Hisashi MINEMOTO , Kouichi HIRANAKA , Takeshi HATAKEYAMA , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA , Yasuo KITAOKA
发明人： Osamu YAMADA , Hisashi MINEMOTO , Kouichi HIRANAKA , Takeshi HATAKEYAMA , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA , Yasuo KITAOKA
IPC分类号： H01B1/06 , C01B21/06 , C30B17/00
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

3. 发明申请

US20080271665A1 Method for producing group III Nitride-based compound semiconductor 有权
标题翻译：制备III族氮化物系化合物半导体的方法
公开(公告)号：US20080271665A1
公开(公告)日：2008-11-06
申请号：US12081943
申请日：2008-04-23
申请人： Shiro YAMAZAKI , Seiji NAGAI , Takayuki SATO , Katsuhiro IMAI , Makoto IWAI , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA
发明人： Shiro YAMAZAKI , Seiji NAGAI , Takayuki SATO , Katsuhiro IMAI , Makoto IWAI , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA
IPC分类号： C30B15/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12 , C30B29/406
摘要： In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG. 1A, a nitrogen-face of a self-standing substrate comes into close contact with a sloped flat inner wall of a crucible. In FIG. 1B, a nitrogen-face of a self-standing substrate comes into close contact with a horizontally facing flat inner wall of a crucible, and the substrate is fixed by means of a jig. In FIG. 1C, a jig is provided on a flat bottom of a crucible, and two GaN self-standing substrates are fixed by means of the jig so that the nitrogen-faces of the substrates come into close contact with each other. In FIG. 1D, a jig is provided on a flat bottom of a crucible, and a GaN self-standing substrate is fixed on the jig so that the nitrogen-face of the substrate is covered with the jig. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on a gallium-face under pressurized nitrogen.
摘要翻译：在通过助熔剂制造GaN的情况下，可以防止在GaN自立基板的氮面上沉积杂晶，原料的浪费。例示了四个坩埚和GaN自立衬底的布置。在图如图1A所示，自立基板的氮面与坩埚的倾斜的平坦的内壁紧密接触。在图如图1B所示，自立式基板的氮面与坩埚的水平面对的平坦的内壁紧密接触，通过夹具固定基板。在图如图1C所示，在坩埚的平坦底部设置夹具，并且通过夹具固定两个GaN自立基板，使得基板的氮气面彼此紧密接触。在图如图1D所示，在坩埚的平坦底部设置夹具，并且将GaN自立基板固定在夹具上，使得基板的氮面被夹具覆盖。将熔融的镓和钠的助熔剂混合物装入每个坩埚中，并且在加压氮气下在镓面上生长GaN单晶。

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