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1. 发明授权

US5509973A Roof panel and roof structure with solar batteries 失效
标题翻译：屋顶板和屋顶结构与太阳能电池
公开(公告)号：US5509973A
公开(公告)日：1996-04-23
申请号：US223507
申请日：1994-04-06
申请人： Osamu Ishikawa , Naoko Oya , Michio Sasaki , Akio Miwa
发明人： Osamu Ishikawa , Naoko Oya , Michio Sasaki , Akio Miwa
IPC分类号： E04D13/18 , F24J2/04 , F24J2/52 , H01L31/042 , H01L31/048
CPC分类号： H01L31/048 , F24J2/045 , F24J2/4614 , F24J2/5207 , F24J2/5211 , F24J2/5245 , F24J2/5262 , H02S20/23 , F24J2002/0053 , Y02B10/12 , Y02B10/20 , Y02E10/44 , Y02E10/47 , Y02E10/50 , Y02P80/25 , Y10S136/291
摘要： A roof panel with solar batteries and a roof structure with solar batteries, which can improve water blocking between adjacent solar batteries integral with the roof panel. On the inclined surface of the roof Y is disposed the base panel 2, on which support rails 37 (each having a two-stage structure with a gutter and a cylindrical section 37a and 37b) are provided. A plurality of solar battery panels 3, provided with a frame (having an upper and a lower frame member 6 and 7 and paired vertical frame members 8) therearound, are each provided between paired support frames 37. The lower frame member 7 has an extension 25 extending from its side nearer the eaves N and covering the upper frame member 6 of the adjacent panel 3. The base and solar battery panels 2 and 3 are made integral with one another in the factory to be supplied as a roof panel 1 with solar batteries. With this structure, water is blocked around the solar battery panel 3 by the frame (6 to 8) therearound. Rainwater having fallen onto the surface of the panel 3 is drained along the extension 25 to the panel 3 on the side of the eaves N, or is led side-wise to support rails (i.e., gutter sections 37a thereof) to be drained to the side of the eaves N.
摘要翻译：具有太阳能电池的屋顶面板和具有太阳能电池的屋顶结构，可以改善与屋顶面板成一体的相邻太阳能电池之间的水阻塞。在屋顶Y的倾斜表面上设置有底板2，在其上设置有支撑轨道37（每个具有带有槽的两级结构和圆柱形部分37a和37b）。在一对支撑框架37之间设置有多个设置有框架（具有上部框架构件6和下部框架构件7以及成对的竖直框架构件8）的太阳能电池面板3.下部框架构件7具有延伸部 25从其靠近屋檐N的一侧延伸并覆盖相邻面板3的上框架构件6.基座和太阳能电池面板2和3在工厂中彼此一体地被制成为具有太阳能的屋顶面板1 电池通过这种结构，水通过其周围的框架（6至8）在太阳能电池面板3周围被阻挡。落在面板3的表面上的雨水沿着延伸部25被排出到屋檐N一侧的面板3，或者被侧向地引导到支撑轨道（即，其沟槽部分37a）被排出到屋檐N侧

2. 发明授权

US06639555B1 Antenna unit, communication system and digital television receiver 失效
标题翻译：天线单元，通信系统和数字电视接收机
公开(公告)号：US06639555B1
公开(公告)日：2003-10-28
申请号：US09486332
申请日：2000-05-31
申请人： Joji Kane , Takasi Yosida , Noboru Nomura , Michio Sasaki , Akinori Yanase , Satoshi Yamada
发明人： Joji Kane , Takasi Yosida , Noboru Nomura , Michio Sasaki , Akinori Yanase , Satoshi Yamada
IPC分类号： H01Q138
CPC分类号： H01Q9/14 , H01Q1/32 , H01Q1/36 , H01Q3/26 , H01Q5/321 , H01Q5/371 , H01Q5/378 , H01Q5/40 , H01Q5/50 , H01Q9/0414 , H01Q9/0421 , H01Q9/42 , H01Q21/28 , H01Q21/30 , H01Q23/00
摘要： An antenna device comprising a conductive earth substrate, a receiving element located in the proximity of said conductive earth substrate and having a receiving terminal, and a transmitting element located in the proximity of said receiving element and having a transmitting terminal, characterized in that an end of said receiving element and an end of said transmitting element are connected to said conductive earth substrate for grounding through a common portion and the frequency band of said receiving element is different from that of said transmitting element.
摘要翻译：一种天线装置，包括导电接地衬底，位于所述导电接地衬底附近并具有接收端子的接收元件和位于所述接收元件附近并具有发射端子的发射元件，其特征在于，端部并且所述发送元件的端部连接到所述导电接地基板，用于通过公共部分接地，并且所述接收元件的频带不同于所述发送元件的频带。

3. 发明授权

US06521926B1 Mos type image sensor 有权
标题翻译： Mos型图像传感器
公开(公告)号：US06521926B1
公开(公告)日：2003-02-18
申请号：US09695989
申请日：2000-10-26
申请人： Michio Sasaki
发明人： Michio Sasaki
IPC分类号： H01L31062
CPC分类号： H04N5/35518 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： A MOS type image sensor has an image area that consists of a matrix of pixels and a peripheral circuitry area that drives the image area. To make the MOS type image sensor finer and finer, each of the pixels consists of a second p-well region having a lower impurity concentration than a first p-well region disposed in the peripheral circuitry area; a photodiode having a first main electrode region made of the second p-well region and a second main electrode region formed as a first n-diffusion layer disposed at the surface of the second p-well region; a read transistor having a first main electrode region made of the first n-diffusion layer, a second main electrode region formed as a second n-diffusion layer disposed at the surface of the second p-well region, a gate insulation film disposed on the surface of the second p-well region between the first and second n-diffusion layers, and a gate electrode disposed on the gate insulation film and connected to a read signal line; and an amplification transistor disposed in a third p-well region, having a gate electrode connected to the second main electrode region of the read transistor, a first main electrode region connected to an output signal line, and a second main electrode region. Since the impurity concentration of the second p-well region is low, scaled design rules are employable without causing “white pixels”, sensitivity deterioration, signal read voltage increase, or short-channel effect.
摘要翻译： MOS型图像传感器具有由像素矩阵和驱动图像区域的外围电路区域组成的图像区域。为了使MOS型图像传感器更精细，每个像素由具有比设置在外围电路区域中的第一p阱区域的杂质浓度低的第二p阱区域组成; 具有由第二p阱区域制成的第一主电极区域和形成为设置在第二p阱区域的表面处的第一n扩散层的第二主电极区域的光电二极管; 具有由第一n型扩散层制成的第一主电极区域的第二主电极区域，设置在第二p阱区域的表面处的第二n型扩散层形成的第二主电极区域，在第一和第二n-扩散层之间的第二p阱区的表面和设置在栅极绝缘膜上并连接到读取信号线的栅电极; 以及放大晶体管，其设置在第三p阱区域中，具有连接到所述读取晶体管的第二主电极区域的栅电极，连接到输出信号线的第一主电极区域和第二主电极区域。由于第二p阱区域的杂质浓度低，所以可以使用缩放设计规则而不引起“白色像素”，灵敏度劣化，信号读取电压增加或短通道效应。

4. 发明授权

US5428231A Solid-state image device including charge-coupled devices having improved electrode structure 失效
标题翻译：固态图像器件包括具有改进的电极结构的电荷耦合器件
公开(公告)号：US5428231A
公开(公告)日：1995-06-27
申请号：US269349
申请日：1994-06-30
申请人： Nagataka Tanaka , Yoshiyuki Matsunaga , Michio Sasaki , Hirofumi Yamashita , Nobuo Nakamura
发明人： Nagataka Tanaka , Yoshiyuki Matsunaga , Michio Sasaki , Hirofumi Yamashita , Nobuo Nakamura
IPC分类号： H01L21/28 , H01L27/148 , H01L29/423 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L29/42396 , H01L27/14831
摘要： A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film. The gap between the electrodes of the horizontal CCD is determined by a silicon oxide film obtained by subjecting the alternately arranged electrodes of the first polysilicon film to thermal oxidation.
摘要翻译：固态成像装置包括在半导体基板上二维布置的多个光电转换累积部分，用于垂直转移从光电转换累积部分读出的信号电荷的多个垂直CCD以及用于接收和水平的水平CCD 传输由垂直CCD传输的信号电荷。水平CCD的转印电极之间的间隙小于垂直CCD的转印电极之间的间隙。垂直CCD的转印电极具有通过图案化第一多晶硅膜形成的单层电极结构。水平CCD的转移电极具有重叠的双层电极结构，其包括交替排列的电极，其通过对第一多晶硅膜进行构图而形成，并且通过图案化第二多晶硅膜而形成交替排列的电极之间的电极。水平CCD的电极之间的间隙由通过对第一多晶硅膜的交替排列的电极进行热氧化而获得的氧化硅膜确定。

5. 发明授权

US06674470B1 MOS-type solid state imaging device with high sensitivity 失效
标题翻译：高灵敏度的MOS型固态成像装置
公开(公告)号：US06674470B1
公开(公告)日：2004-01-06
申请号：US08933975
申请日：1997-09-19
申请人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
发明人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H04N5/3765 , H04N5/3575 , H04N5/37457
摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.
摘要翻译：固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管，用于选择单元格。读出晶体管形成在半导体衬底中的第一器件区域中。复位晶体管形成在半导体衬底中的第二器件区域中。读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

6. 发明授权

US06608594B1 Antenna apparatus and communication system 失效
标题翻译：天线设备和通信系统
公开(公告)号：US06608594B1
公开(公告)日：2003-08-19
申请号：US09680263
申请日：2000-10-05
申请人： Joji Kane , Hirotaka Ishihara , Noboru Nomura , Shinji Naka , Michio Sasaki , Akinori Yanase , Satoshi Yamada , Hirokazu Kaidou , Katsuya Tanioka
发明人： Joji Kane , Hirotaka Ishihara , Noboru Nomura , Shinji Naka , Michio Sasaki , Akinori Yanase , Satoshi Yamada , Hirokazu Kaidou , Katsuya Tanioka
IPC分类号： H01Q138
CPC分类号： H01Q1/38 , H01Q5/378 , H01Q5/385 , H01Q5/40 , H01Q9/0407 , H01Q9/065 , H01Q19/005
摘要： An antenna apparatus having at least one radiating element. A second radiating element is located opposite a first radiating element. Earth is on the side opposite to the first radiating element with respect to the second radiating element thus opposite to the second radiating element. The second radiating element intervenes between the first radiating element and earth. Either the first or the second radiating element employs a feed terminal.
摘要翻译：一种具有至少一个辐射元件的天线装置。第二辐射元件位于与第一辐射元件相对的位置。地球相对于第二辐射元件在与第一辐射元件相对的一侧上，因此与第二辐射元件相对。第二辐射元件介于第一辐射元件和地之间。第一或第二辐射元件都使用馈电端子。

7. 发明授权

US5504526A Solid-state image sensing device with storage-diode potential controller 失效
标题翻译：具有存储二极管电位控制器的固态摄像装置
公开(公告)号：US5504526A
公开(公告)日：1996-04-02
申请号：US155833
申请日：1993-11-23
申请人： Ryohei Miyagawa , Shinji Ohsawa , Hirofumi Yamashita , Michio Sasaki , Yoshiyuki Matsunaga
发明人： Ryohei Miyagawa , Shinji Ohsawa , Hirofumi Yamashita , Michio Sasaki , Yoshiyuki Matsunaga
IPC分类号： H01L27/148 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/369 , H04N5/3728 , H04N5/376
CPC分类号： H04N5/3728 , H01L27/14831 , H04N5/3597
摘要： A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode. A potential controller is provided which forces, when a signal charge packet is read out of the storage diode toward the CCD register layer, the storage diode to decrease in potential so that the storage diode becomes potentially less than its potential as set during the reset operation, while causing the channel region to be fixed at almost the same potential during the read operation and the reset operation.
摘要翻译：固态成像装置包括基板和布置在基板上的电荷分组存储单元或像素（或“像素”）的阵列，每个包括存储二极管，其中存储指示入射光的信号电荷分组。电荷转移部分与图像元素阵列耦合。转印部分包括与存储二极管间隔开以限定它们之间的沟道区域的电荷耦合器件（CCD）寄存器层，以及覆盖寄存器层和沟道区域的第一绝缘电极。复位部分耦合到存储二极管，用于通过额外地将额外的电荷分组注入到存储二极管中并通过使电荷从存储二极管排出来潜在地复位存储二极管。提供了一种电位控制器，当将信号电荷分组从存储二极管朝向CCD寄存器层读出时，存储二极管降低电位，使得存储二极管潜在地小于其在复位操作期间设置的电位同时在读取操作和复位操作期间使通道区域固定在几乎相同的电位。

8. 发明授权

US3953977A Device for damping waves 失效
标题翻译：用于阻尼波的装置
公开(公告)号：US3953977A
公开(公告)日：1976-05-04
申请号：US487646
申请日：1974-07-11
申请人： Keizo Kikui , Michio Sasaki
发明人： Keizo Kikui , Michio Sasaki
IPC分类号： E02B3/14 , A01K61/00 , E02B3/06
CPC分类号： A01K61/006 , E02B3/062 , E02B2201/04 , Y02W30/687
摘要： A device for damping waves comprising an inclined frame having a plurality of barriers and moored to the sea bottom so as to be downwardly sloped against the wave in the sea water, and an upright frame having a plurality of barriers provided on the upper end of said inclined frame and perpendicular to the plane of the inclined frame.
摘要翻译：一种用于阻尼波的装置，包括一个倾斜框架，该倾斜框架具有多个屏障并系泊在海底，以便相对于海水中的波浪向下倾斜;以及直立框架，其具有设置在所述海底的上端的多个屏障倾斜框架并垂直于倾斜框架的平面。

9. 发明授权

US07728398B2 Micro camera module and method of manufacturing the same 失效
标题翻译：微型相机模块及其制造方法
公开(公告)号：US07728398B2
公开(公告)日：2010-06-01
申请号：US11476160
申请日：2006-06-28
申请人： Hironori Nakajo , Hiroshi Yoshikawa , Michio Sasaki , Akihiro Hori
发明人： Hironori Nakajo , Hiroshi Yoshikawa , Michio Sasaki , Akihiro Hori
IPC分类号： H01L31/058
CPC分类号： H04N5/2253 , H01L27/14618 , H01L27/14632 , H01L2224/05001 , H01L2224/05009 , H01L2224/051 , H01L2224/05548 , H01L2224/13 , H01L2924/00014 , H04N5/2254 , H04N5/2257 , H01L2224/05599
摘要： A semiconductor chip constituting an image pickup device is provided on a substrate and includes a connection terminal and an image pickup portion. A lens sheet having a lens portion is provided on the semiconductor chip. A groove is formed in at least the substrate to expose the connection terminal. A conductor pattern is formed in the groove and has one end electrically connected to the connection terminal.
摘要翻译：构成图像拾取装置的半导体芯片设置在基板上，并且包括连接端子和图像拾取部分。具有透镜部分的透镜片设置在半导体芯片上。至少在衬底中形成凹槽以暴露连接端子。导体图案形成在凹槽中，并且一端电连接到连接端子。

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