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    • 1. 发明申请
    • (AMIDE AMINO ALKANE) METAL COMPOUND, METHOD OF MANUFACTURING METAL-CONTAINING THIN FILM USING SAID METAL COMPOUND
    • (AMIDE AMINO ALKANE)金属化合物,使用含金属化合物制造含金属薄膜的方法
    • US20130273250A1
    • 2013-10-17
    • US13882824
    • 2011-11-02
    • Osamu FujimuraHiroki KanatoMasashi ShiraiHiroshi Nihei
    • Osamu FujimuraHiroki KanatoMasashi ShiraiHiroshi Nihei
    • H01L51/00C07F15/06C07F5/00C07F3/06C07F15/02C07F15/04C07F3/02C07F13/00
    • H01L51/0083C07C211/65C07F3/02C07F3/06C07F5/003C07F13/005C07F15/025C07F15/045C07F15/065C23C16/18C23C16/403C23C16/407H01L51/0077H01L51/0084H01L51/0089H01L51/0092
    • The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M is Zn (Zinc) and R1 is methyl group are excluded; the metal compounds in which M is Bi (Bismuth) and R1 is t-butyl group are excluded; and in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.
    • 本发明涉及由式(1)表示的(酰胺氨基烷烃)金属化合物:其中M表示金属原子; R1表示碳原子数为1〜6的直链状,支链状或环状的烷基。 R 2和R 3可以彼此相同或不同,并且各自独立地表示具有1至3个碳原子的直链或支链烷基,或者R 2和R 3可以一起形成取代或未取代的5-或6-元环 与它们所结合的氮原子一起; Z表示碳原子数1〜10的直链状或支链状的亚烷基(其一部分可以形成环)。 n表示与金属(M)的化合价相同的配体数,表示1〜3的整数。 条件是不包括其中M为Li(锂),Be(铍),Ge(锗)或Nd(钕)的金属化合物; 其中M为Mg(镁)和R1为甲基的金属化合物被排除; 其中M为Zn(锌)和R1为甲基的金属化合物被排除; 其中M为Bi(铋)和R 1为叔丁基的金属化合物被排除; 并且在n为2或更大的情况下,两个或多个配体可以彼此相同或不同; 以及使用该金属化合物制造含金属薄膜的方法。
    • 2. 发明授权
    • (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound
    • (酰胺氨基烷烃)金属化合物,使用所述金属化合物制造含金属薄膜的方法
    • US08871304B2
    • 2014-10-28
    • US13882824
    • 2011-11-02
    • Osamu FujimuraHiroki KanatoMasashi ShiraiHiroshi Nihei
    • Osamu FujimuraHiroki KanatoMasashi ShiraiHiroshi Nihei
    • H01L51/00C07F15/00C07F13/00C07F5/00C07F3/00C07F15/06C07F15/04C07F15/02C07F3/02C07F3/06
    • H01L51/0083C07C211/65C07F3/02C07F3/06C07F5/003C07F13/005C07F15/025C07F15/045C07F15/065C23C16/18C23C16/403C23C16/407H01L51/0077H01L51/0084H01L51/0089H01L51/0092
    • The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M is Zn (Zinc) and R1 is methyl group are excluded; the metal compounds in which M is Bi (Bismuth) and R1 is t-butyl group are excluded; and in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.
    • 本发明涉及由式(1)表示的(酰胺氨基烷烃)金属化合物:其中M表示金属原子; R1表示碳原子数为1〜6的直链状,支链状或环状的烷基。 R 2和R 3可以彼此相同或不同,并且各自独立地表示具有1至3个碳原子的直链或支链烷基,或者R 2和R 3可以一起形成取代或未取代的5-或6-元环 与它们所结合的氮原子一起; Z表示碳原子数1〜10的直链状或支链状的亚烷基(其一部分可以形成环)。 n表示与金属(M)的化合价相同的配体数,表示1〜3的整数。 条件是不包括其中M为Li(锂),Be(铍),Ge(锗)或Nd(钕)的金属化合物; 其中M为Mg(镁)和R1为甲基的金属化合物被排除; 其中M为Zn(锌)和R1为甲基的金属化合物被排除; 其中M为Bi(铋)和R 1为叔丁基的金属化合物被排除; 并且在n为2或更大的情况下,两个或多个配体可以彼此相同或不同; 以及使用该金属化合物制造含金属薄膜的方法。