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    • 1. 发明申请
    • (AMIDE AMINO ALKANE) METAL COMPOUND, METHOD OF MANUFACTURING METAL-CONTAINING THIN FILM USING SAID METAL COMPOUND
    • (AMIDE AMINO ALKANE)金属化合物,使用含金属化合物制造含金属薄膜的方法
    • US20130273250A1
    • 2013-10-17
    • US13882824
    • 2011-11-02
    • Osamu FujimuraHiroki KanatoMasashi ShiraiHiroshi Nihei
    • Osamu FujimuraHiroki KanatoMasashi ShiraiHiroshi Nihei
    • H01L51/00C07F15/06C07F5/00C07F3/06C07F15/02C07F15/04C07F3/02C07F13/00
    • H01L51/0083C07C211/65C07F3/02C07F3/06C07F5/003C07F13/005C07F15/025C07F15/045C07F15/065C23C16/18C23C16/403C23C16/407H01L51/0077H01L51/0084H01L51/0089H01L51/0092
    • The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M is Zn (Zinc) and R1 is methyl group are excluded; the metal compounds in which M is Bi (Bismuth) and R1 is t-butyl group are excluded; and in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.
    • 本发明涉及由式(1)表示的(酰胺氨基烷烃)金属化合物:其中M表示金属原子; R1表示碳原子数为1〜6的直链状,支链状或环状的烷基。 R 2和R 3可以彼此相同或不同,并且各自独立地表示具有1至3个碳原子的直链或支链烷基,或者R 2和R 3可以一起形成取代或未取代的5-或6-元环 与它们所结合的氮原子一起; Z表示碳原子数1〜10的直链状或支链状的亚烷基(其一部分可以形成环)。 n表示与金属(M)的化合价相同的配体数,表示1〜3的整数。 条件是不包括其中M为Li(锂),Be(铍),Ge(锗)或Nd(钕)的金属化合物; 其中M为Mg(镁)和R1为甲基的金属化合物被排除; 其中M为Zn(锌)和R1为甲基的金属化合物被排除; 其中M为Bi(铋)和R 1为叔丁基的金属化合物被排除; 并且在n为2或更大的情况下,两个或多个配体可以彼此相同或不同; 以及使用该金属化合物制造含金属薄膜的方法。
    • 5. 发明申请
    • Headbox for Paper Machine
    • 纸机流浆箱
    • US20080023167A1
    • 2008-01-31
    • US11571489
    • 2005-06-28
    • Takeo NakazawaOsamu FujimuraJunichi ItoJun Murakawa
    • Takeo NakazawaOsamu FujimuraJunichi ItoJun Murakawa
    • D21F1/02D21F1/06
    • D21F1/02D21F1/022D21F1/026D21F1/06
    • An object of the present invention is to provide a headbox for a paper machine in which correction of the fiber orientation of paper is possible over the entire width of the C/D direction, regardless of the slice width, and in which the fiber orientation in the direction of paper thickness can be corrected over the entire thickness of the paper. A headbox (1) for a paper machine according to claim (1) of the present invention discharges paper raw material onto a wire as a raw material jet gj from a slice (5) which is supplied with the paper raw material, and comprises orientation correcting means (h3) for correcting the pulp fiber orientation by supplying paper raw material, which is extracted from a taper header (2) in which paper raw material for a main flow is stored, or from a correction-only taper header (2s) in which paper raw material for correcting the pulp fiber orientation is stored, as a correction flow to a single location in a central portion of the slice (5) via at least one flow control valve (b3).
    • 本发明的一个目的是提供一种用于造纸机的流浆箱,其中在C / D方向的整个宽度上可以校正纸的纤维取向,而不管切片宽度如何,其中纤维取向 可以在纸张的整个厚度上校正纸张厚度的方向。 根据本发明的权利要求(1)的造纸机的流浆箱(1)将纸原料从作为原料射流gj从作为纸原料的切片(5)排出到线材上,并且包括取向 用于通过供给从其中存储用于主流的纸原料的锥形集管(2)中提取的纸原料或从仅校正锥形头(2)中提取的纸浆纤维取向来校正纸浆纤维取向的校正装置(h 3) s),其中存储用于校正纸浆纤维取向的纸张原料作为经由至少一个流量控制阀(b 3)在切片(5)的中心部分中的单个位置的校正流。
    • 6. 发明授权
    • (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound
    • (酰胺氨基烷烃)金属化合物,使用所述金属化合物制造含金属薄膜的方法
    • US08871304B2
    • 2014-10-28
    • US13882824
    • 2011-11-02
    • Osamu FujimuraHiroki KanatoMasashi ShiraiHiroshi Nihei
    • Osamu FujimuraHiroki KanatoMasashi ShiraiHiroshi Nihei
    • H01L51/00C07F15/00C07F13/00C07F5/00C07F3/00C07F15/06C07F15/04C07F15/02C07F3/02C07F3/06
    • H01L51/0083C07C211/65C07F3/02C07F3/06C07F5/003C07F13/005C07F15/025C07F15/045C07F15/065C23C16/18C23C16/403C23C16/407H01L51/0077H01L51/0084H01L51/0089H01L51/0092
    • The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M is Zn (Zinc) and R1 is methyl group are excluded; the metal compounds in which M is Bi (Bismuth) and R1 is t-butyl group are excluded; and in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.
    • 本发明涉及由式(1)表示的(酰胺氨基烷烃)金属化合物:其中M表示金属原子; R1表示碳原子数为1〜6的直链状,支链状或环状的烷基。 R 2和R 3可以彼此相同或不同,并且各自独立地表示具有1至3个碳原子的直链或支链烷基,或者R 2和R 3可以一起形成取代或未取代的5-或6-元环 与它们所结合的氮原子一起; Z表示碳原子数1〜10的直链状或支链状的亚烷基(其一部分可以形成环)。 n表示与金属(M)的化合价相同的配体数,表示1〜3的整数。 条件是不包括其中M为Li(锂),Be(铍),Ge(锗)或Nd(钕)的金属化合物; 其中M为Mg(镁)和R1为甲基的金属化合物被排除; 其中M为Zn(锌)和R1为甲基的金属化合物被排除; 其中M为Bi(铋)和R 1为叔丁基的金属化合物被排除; 并且在n为2或更大的情况下,两个或多个配体可以彼此相同或不同; 以及使用该金属化合物制造含金属薄膜的方法。