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1. 发明授权

US08306607B1 Implantable sensing arrangement and approach 失效
标题翻译：植入式感应装置和方法
公开(公告)号：US08306607B1
公开(公告)日：2012-11-06
申请号：US10979091
申请日：2004-11-01
申请人： Ofer Levi , Evan P. Thrush , James S. Harris , Stepehn J. Smith , Krishna V. Shenoy
发明人： Ofer Levi , Evan P. Thrush , James S. Harris , Stepehn J. Smith , Krishna V. Shenoy
IPC分类号： A61B5/00
CPC分类号： A61B5/0086 , A61B5/0031 , A61B5/0071 , A61B5/4064 , A61B2562/046
摘要： Characteristics of biological substances, such as cerebral cortex matter, are sensed. According to an example embodiment, the present invention is directed to a negligibly-intrusive, multi-layer integrated circuit arrangement for monitoring activity of an area of a cerebral cortex that would normally be covered by an anatomical layer. The multi-layer integrated circuit arrangement includes an optics layer located outside the cerebral cortex area that includes an emitter and a detector. The optics layer is adapted for implantation in the anatomical layer and for sensing at least one brain-activity parameter. The multi-layered integrated circuit arrangement also includes a data-processing layer that includes a digital-processing circuit that is adapted for assimilating neural data in response to the optics layer sensing at least one brain-activity parameter.
摘要翻译：感觉到生物物质如大脑皮层物质的特征。根据示例性实施例，本发明涉及一种用于监测通常被解剖层覆盖的大脑皮质区域的活动的可忽略不计的多层集成电路装置。多层集成电路装置包括位于大脑皮质区域外部的光学层，该光学层包括发射器和检测器。光学层适于植入解剖层并用于感测至少一个脑活动参数。多层集成电路装置还包括数据处理层，其包括数字处理电路，该数字处理电路适于响应于感测至少一个脑活动参数的光学层而吸收神经数据。

2. 发明申请

US20080232735A1 Surface parallel modulator 失效
公开(公告)号：US20080232735A1
公开(公告)日：2008-09-25
申请号：US11524530
申请日：2006-09-19
申请人： David A.B. Miller , Yu-Hsuan Kuo , James S. Harris
发明人： David A.B. Miller , Yu-Hsuan Kuo , James S. Harris
IPC分类号： G02F1/035
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.

3. 发明授权

US06359690B1 Apparatus, system and method for determining wear of an article 失效
标题翻译：用于确定物品磨损的装置，系统和方法
公开(公告)号：US06359690B1
公开(公告)日：2002-03-19
申请号：US09504440
申请日：2000-02-16
申请人： Frederick M. Discenzo , James S. Harris
发明人： Frederick M. Discenzo , James S. Harris
IPC分类号： G01B902
CPC分类号： F16D66/02 , B60C11/24 , F16D2066/001 , G01B11/06 , G01D5/268 , G01M11/086 , H01R39/58 , H02K5/14 , H02K11/25 , H02K11/35
摘要： A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.
摘要翻译：一种用于确定包括用于从光源传输光的光纤的物品的磨损的系统。光纤被嵌入物品中，可操作地耦合到干涉系统。干涉仪系统可操作地耦合到处理器。干涉系统为处理器提供与光纤的磨损相关的信息，并且处理器基于与光纤的磨损有关的信息来确定物品的磨损率和物品的剩余使用寿命的磨损。

4. 发明授权

US5270798A High electron mobility transistor 失效
标题翻译：高电子迁移率晶体管
公开(公告)号：US5270798A
公开(公告)日：1993-12-14
申请号：US481849
申请日：1990-02-20
申请人： Yi-Ching Pao , James S. Harris
发明人： Yi-Ching Pao , James S. Harris
IPC分类号： H01L29/778 , H01L29/80 , H01L29/205
CPC分类号： H01L29/7783 , H01L29/7787
摘要： A high-electron mobility transistor or HEMT has a top surface layer between its gate and drain arranged to produce a channel to drain conductance that is close to the ungated channel conductance to lower the output conductance and reduce gate leakage and gate capacitance. The transistor has a high band-gap active layer to produce a 2DEG channel in an adjacent layer, and source, gate and drain electrodes on the active layer. An undoped or lightly doped surface layer in the region between the gate and the drain produces a low conductance for a region of a few hundred .ANG. from the drain-side edge of the gate. This spreads the electric field domain over at least this few hundred .ANG. distance.
摘要翻译：高电子迁移率晶体管或HEMT在其栅极和漏极之间具有顶表面层，其布置成产生沟道以漏极接近于非门通道电导，以降低输出电导并降低栅极泄漏和栅极电容。晶体管具有高带隙有源层以在相邻层中产生2DEG沟道，并且在有源层上产生源极，栅极和漏极。在栅极和漏极之间的区域中的未掺杂或轻掺杂的表面层对于来自栅极的漏极侧边缘的几百个ANGSTROM的区域产生低电导。至少在这几百ANGSTROM的距离内扩展了电场域。

5. 发明授权

US6067159A System for determining condition of an article 有权
标题翻译：用于确定物品状况的系统
公开(公告)号：US6067159A
公开(公告)日：2000-05-23
申请号：US253785
申请日：1999-02-22
申请人： Frederick M. Discenzo , James S. Harris
发明人： Frederick M. Discenzo , James S. Harris
IPC分类号： B60C11/24 , G01B11/06 , G01D5/353 , H01R39/58 , G01B9/02
CPC分类号： F16D66/02 , B60C11/24 , G01B11/06 , G01D5/268 , G01M11/086 , H01R39/58 , F16D2066/001
摘要： A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.
摘要翻译：一种用于确定包括用于从光源传输光的光纤的物品的磨损的系统。光纤被嵌入物品中，可操作地耦合到干涉系统。干涉仪系统可操作地耦合到处理器。干涉系统为处理器提供与光纤的磨损相关的信息，并且处理器基于与光纤的磨损有关的信息来确定物品的磨损率和物品的剩余使用寿命的磨损。

6. 发明授权

US4566757A Holographic optical processing method and apparatus 失效
标题翻译：全息光学处理方法及装置
公开(公告)号：US4566757A
公开(公告)日：1986-01-28
申请号：US548892
申请日：1983-09-23
申请人： Richard L. Fusek , James S. Harris , Kevin G. Harding
发明人： Richard L. Fusek , James S. Harris , Kevin G. Harding
IPC分类号： G03H1/00 , G06E3/00 , G03H1/16
CPC分类号： G03H1/00 , G06E3/003 , Y10S359/90
摘要： A method and apparatus for performing optical processing on optical information corresponding to a subject (66) combines known optical processing techniques with holography. A reverse ray-trace holographic system is provided so that the image reconstruction beam (90) passes through the optical system in a direction exactly opposite to that travelled by the subject beam (50) during recording of the hologram (88). Aberrations introduced by the system optics are then completely compensated for, allowing use of lower quality optical components. A single large-aperture lens (68) is used to define a Fourier transform of the optical subject information as the hologram (88) is recorded or the image reconstructed, and the subject information is manipulated within the Fourier transform plane (91).
摘要翻译： PCT No.PCT / US83 / 00184 Sec。 371日期1983年9月23日 102（e）1983年10月12日日期PCT提交1983年2月14日PCT公布。公开号WO83 / 02831 日期：1983年8月18日。一种用于对对应于对象（66）的光学信息进行光学处理的方法和装置将已知的光学处理技术与全息术相结合。提供了一种反射光线追踪全息系统，使得图像重建光束（90）在记录全息图（88）期间沿着与被摄体光束（50）行进的方向完全相反的方向穿过光学系统。然后完全补偿由系统光学器件引入的像差，允许使用较低质量的光学部件。当记录全息图（88）或重建图像时，使用单个大孔径透镜（68）来定义光学对象信息的傅里叶变换，并且在傅立叶变换平面（91）内操纵对象信息。

7. 发明授权

US06273949B1 Method for fabricating orientation-patterned gallium arsenide seeding structures 有权
标题翻译：用于制造取向图案化的砷化镓接种结构的方法
公开(公告)号：US06273949B1
公开(公告)日：2001-08-14
申请号：US09394122
申请日：1999-09-10
申请人： Loren A. Eyres , Martin M. Fejer , Christopher B. Ebert , James S. Harris
发明人： Loren A. Eyres , Martin M. Fejer , Christopher B. Ebert , James S. Harris
IPC分类号： C30B2518
CPC分类号： G02F1/3556 , B82Y20/00 , C30B25/18 , G02F1/3558 , G02F2001/3548
摘要： A method for fabricating gallium arsenide (GaAs) based structure groups with inverted crystallographic orientation to form wavelength converters that utilizes germanium as a crystallographic neutral template layer deposited on a GaAs substrate. A crystallographic inverted gallium arsenide layer is grown on top of the template layer. In a selective trench etching process areas of the substrate are exposed again for a consecutive collective deposition of GaAs.
摘要翻译：一种制造具有倒置晶体取向的基于砷化镓（GaAs）的结构基团的方法，以形成利用锗作为沉积在GaAs衬底上的晶体中性模板层的波长转换器。晶体反转的砷化镓层生长在模板层的顶部。在选择性沟槽蚀刻工艺中，衬底的区域再次暴露出GaAs的连续集中沉积。

8. 发明授权

US4478481A Production of diffraction limited holographic images 失效
$Production of diffraction limited holographic images$
标题翻译：衍射限制全息图像的制作
公开(公告)号：US4478481A
公开(公告)日：1984-10-23
申请号：US348461
申请日：1982-02-12
申请人： Richard L. Fusek , James S. Harris , Kevin G. Harding
发明人： Richard L. Fusek , James S. Harris , Kevin G. Harding
IPC分类号： G03H1/16 , G03H1/00 , G03H1/22 , G06E3/00 , G03H1/02
CPC分类号： G03H1/00 , G06E3/003
摘要： An apparatus for the production of a holographic image of a subject disposed at a subject plane includes a source of coherent light divided by a beamsplitter into a reference beam and a subject beam. The subject beam is directed towards the subject through a beamsplitter and a quarter-wave plate. The front surface of an opaque subject or a mirror behind a transparent subject reflects the subject beam back through the quarter-wave plate to the beamsplitter where it is deflected towards a photo-sensitive recording medium through an imaging lens. The reference beam is simultaneously directed toward the recording medium at a predetermined angle of incidence. After exposure and development of the medium, it is illuminated from the conjugate direction by the redirected reference beam. Image rays exactly retrace their original paths back through the optical system and provide a three-dimensional real-image reconstruction at the subject plane. The images produced may be microscopically examined or studied through optical processing and interferrometric techniques. A method utilizing the above-described apparatus is also disclosed.
摘要翻译：用于制造设置在被摄体平面处的被摄体的全息图像的装置包括由分束器分割成参考光束和被摄体光束的相干光源。被摄体束通过分束器和四分之一波片指向对象。不透明物体的前表面或透明物体后面的反射镜将被摄体光束反射回四分之一波片到分束器，在那里它通过成像透镜偏转到光敏记录介质。参考光束以预定的入射角同时朝向记录介质。在介质的曝光和显影之后，通过重定向的参考光束从共轭方向照射。图像光线正好通过光学系统回溯其原始路径，并在主体平面上提供三维实像重建。所产生的图像可以通过光学加工和干涉测量技术进行微观检查或研究。还公开了利用上述装置的方法。

9. 发明授权

US07645626B2 Multiple GaInNAs quantum wells for high power applications 有权
标题翻译：用于大功率应用的多个GaInNAs量子阱
公开(公告)号：US07645626B2
公开(公告)日：2010-01-12
申请号：US11027436
申请日：2004-12-30
申请人： Wonill Ha , Vincent Gambin , James S. Harris
发明人： Wonill Ha , Vincent Gambin , James S. Harris
IPC分类号： H01L21/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/3201 , H01S5/3211 , H01S5/32366 , H01S5/34306 , H01S2302/00
摘要： In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths approaching and beyond 1.3 μm. According to one aspect, a multiple quantum well strain compensated structure is formed using a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. By growing tensile-strained GaNAs barrier layers, a larger active region with multiple quantum wells can be formed increasing the optical gain of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with at least several quantum wells, for example, nine quantum wells, and with room temperature emission approaching and beyond 1.3 μm.
摘要翻译：关于光电子半导体器件，在接近和超过1.3μm的波长处提供改进的光致发光输出。根据一个方面，使用具有基于GaNA的阻挡层的基于GaInNA的量子阱激光二极管形成多量子阱应变补偿结构。通过生长拉应变GaNAs势垒层，可以形成具有多个量子阱的较大有源区域，从而增加器件的光学增益。在示例实现中，边缘发射激光器件和垂直腔表面发射激光器（VCSEL）器件可以用至少几个量子阱，例如九个量子阱，并且室温发射接近并超过1.3μm而生长。

10. 发明授权

US06798809B1 GaInNAsSb quantum well semiconductor devices 有权
标题翻译： GaInNAsSb量子阱半导体器件
公开(公告)号：US06798809B1
公开(公告)日：2004-09-28
申请号：US10196077
申请日：2002-07-16
申请人： Vincent Gambin , Wonill Ha , James S. Harris
发明人： Vincent Gambin , Wonill Ha , James S. Harris
IPC分类号： H01S500
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/3201 , H01S5/3211 , H01S5/32366 , H01S5/34306 , H01S2302/00
摘要： In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths beyond 1.3 m. According to one aspect, Sb is used in, e.g. the active region of a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. Adding a small amount of Sb increases photoluminescence of the device while increasing the wavelength. Sb is used both as a surfactant, improving N and In incorporation into the active region, and an alloy constituent for red-shifting the wavelength of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with room temperature emission from 1.3 to 1.6 &mgr;m.
摘要翻译：结合光电子半导体器件，在超过1.3μm的波长处提供改进的光致发光输出。根据一个方面，Sb用于例如具有GaNAs的势垒层的基于GaInNA的量子阱激光二极管的有源区。添加少量的Sb会增加器件的光致发光，同时增加波长。 Sb都用作表面活性剂，改善N和In结合到有源区中，以及用于红移器件的波长的合金成分。在示例性实现中，边缘发射激光器件和垂直腔表面发射激光器（VCSEL）器件可以在1.3至1.6μm的室温发射下生长。

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