会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • GOLF ANALYSIS SYSTEM WITH FRAMELESS OPTICAL SENSOR NET
    • 高尔夫分析系统与无源光传感器网
    • US20140024470A1
    • 2014-01-23
    • US13556027
    • 2012-07-23
    • James PaoYi-Ching Pao
    • James PaoYi-Ching Pao
    • A63B69/36
    • A63B71/0619A63B69/3614A63B69/3623A63B2220/805
    • A golf analysis system includes a light emitter assembly, including first and second light emitters spaced apart from one another, and a light detector assembly, including first and second sets of light detectors arranged along a surface of a practice area beneath the light emitters. The light emitters emit first and second spreads of non-parallel light rays, received by the light detectors, to form an optical sensor net for capturing relational kinetic information when at least one of a golf ball and a golf club passing through the optical sensor net. The region between the level of the light detectors and the level of the light emitters is substantially free of mechanical structure.
    • 高尔夫分析系统包括光发射器组件,其包括彼此间隔开的第一和第二光发射器,以及光检测器组件,包括沿着光发射器下面的练习区域的表面布置的第一组和第二组光检测器。 光发射器发射由光检测器接收的非平行光线的第一和第二扩展,以形成光学传感器网络,用于当高尔夫球和高尔夫球杆中的至少一个通过光学传感器网络时捕获关系动力学信息 。 光检测器的电平和发光体的电平之间的区域基本上没有机械结构。
    • 5. 发明授权
    • Methods and apparatus for a portable golf training system with an optical sensor net
    • 具有光学传感器网络的便携式高尔夫训练系统的方法和装置
    • US06302802B1
    • 2001-10-16
    • US09344194
    • 1999-06-24
    • Yi-Ching Pao
    • Yi-Ching Pao
    • A63B6936
    • A63B24/0021A63B69/3614A63B69/3658A63B69/38A63B2024/0034A63B2220/805G01P3/68
    • An optical sensor net system for measuring the relational dynamic information of a spheroidal projectile. A support frame for the system may include light emitters that generate divergent non-parallel rays of light. The non-parallel rays of light emitted may be directed to and received by a plurality of light detectors substantially arranged within a single plane. The intersecting non-parallel rays of light may form an asymmetrical optical sensor net that may also capture both golf ball and golf club information as they pass through. The light detectors that receive the rays of light may be spaced apart at preselected locations and distances less than the diameter of a spheroidal object such as a golf ball. A data processor or computer may be connected to the sensor net to detect relational spatial information for the golf ball and the golf club, and to determine instantaneous dynamic information for either including ball velocity or club speed based at least in part on the locations of the rays of light which are blocked off, and the measured time in which the rays of light emitted to the light detectors are interrupted and monitored by clock instrumentation. The optical sensor net and support frame may be tilted at preselected angles to capture relatively more information for a wide range of golf shots providing enhanced resolution of images depicting the golf ball and/or golf club.
    • 一种用于测量球状射弹的关系动态信息的光学传感器网络系统。 用于系统的支撑框架可以包括产生发散的非平行光线的发光体。 发射的非平行光线可以被引导到基本上布置在单个平面内的多个光检测器并被其接收。 相交的非平行光线可以形成不对称的光学传感器网络,当它们通过时也可以捕获高尔夫球和高尔夫球杆的信息。 接收光线的光检测器可以在预选位置和小于球状物体如高尔夫球的直径的距离处间隔开。 数据处理器或计算机可以连接到传感器网以检测高尔夫球和高尔夫球杆的关系空间信息,并且至少部分地基于球高度球的位置来确定包括球速度或球杆速度的瞬时动态信息 被遮挡的光线以及发射到光检测器的光线的测量时​​间被时钟仪器中断和监视。 光学传感器网和支撑框架可以以预选的角度倾斜,以针对广泛的高尔夫球拍照提供更多的信息,从而提供描绘高尔夫球和/或高尔夫球杆的图像的更高分辨率。
    • 6. 发明授权
    • MBE growth method for high level devices and integrations
    • MBE增长方法用于高级设备和集成
    • US5258327A
    • 1993-11-02
    • US876034
    • 1992-04-30
    • Yi-Ching Pao
    • Yi-Ching Pao
    • H01L21/20H01L21/203
    • H01L21/02392H01L21/02463H01L21/02546H01L21/02631H01L21/02645Y10S438/942
    • A method for forming an epitaxial region on a semiconductor wafer substrate of III-V compound composition. After deposition of a dielectric mask, a seed layer that includes indium is evaporated over the wafer. A layer of III-V material is then deposited over the surface of the wafer by MBE growth. The seed layer acts to create uniformly distributed nucleation cites that are randomly spaced over the surface of the dielectric material and causes a reduction of the surface mobility of the atoms during the epitaxial growth process so that the residual polycrystalline material form atop the dielectric mark exhibits enhance surface morphology. As a result, the direct placement of interconnects on the polycrystalline material is achieve and the costly and time-consuming step of removing both the polycrystalline material and the dielectric mask of the prior art is avoided.
    • 一种在III-V族化合物组合物的半导体晶片衬底上形成外延区的方法。 在沉积介电掩模之后,包括铟的种子层在晶片上蒸发。 然后通过MBE生长将一层III-V材料沉积在晶片的表面上。 种子层用于产生在电介质材料的表面上随机分布的均匀分布的成核子,并且在外延生长过程中导致原子的表面迁移率的降低,使得形成在介电标记上方的剩余多晶材料表现出增强 表面形态。 结果,实现了在多晶材料上的互连的直接放置,并且避免了去除现有技术的多晶材料和介电掩模的昂贵且耗时的步骤。
    • 7. 发明申请
    • Apparatus and method for monitoring launch parameters of a launched sports object
    • 用于监测所发射的运动物体的发射参数的装置和方法
    • US20050026710A1
    • 2005-02-03
    • US10884396
    • 2004-07-01
    • Yi-Ching Pao
    • Yi-Ching Pao
    • A63B43/00A63B69/36A63B71/06
    • A63B69/3658A63B24/0021A63B43/008A63B71/06A63B2024/0034A63B2102/32A63B2220/05A63B2220/806
    • A video image acquisition apparatus is disclosed. The apparatus has one or multiple digital cameras taking images of a flying golf ball created by at least two flashes or strobes of light on continuous video mode at a predetermined frame rate. Each image frame is then subtracted from the background and compared to determine the existence of the ball image in flight thus eliminating a dependency upon the camera shutter speed which must be synchronized with the flashes in prior art design. Furthermore, another video image acquisition apparatus is also disclosed that consists of at least two video cameras taking images of flying golf balls created by at least two flashes or strobes of light at predetermined time intervals. The apparatus then applies triangulate calculation of the two camera images to determine the exact physical locations of the flying golf balls in space at a given time of flight.
    • 公开了一种视频图像采集装置。 该装置具有一个或多个数字照相机,以预定的帧速率在连续视频模式下拍摄由至少两个闪光或闪光灯产生的高尔夫球的图像。 然后从背景中减去每个图像帧并进行比较以确定飞行中球图像的存在,从而消除了必须与现有技术设计中的闪光同步的相机快门速度的依赖性。 此外,还公开了另一种视频图像获取装置,其包括至少两个摄像机,其以预定的时间间隔拍摄由至少两个闪光或闪光灯产生的飞行高尔夫球的图像。 然后,该装置对两个照相机图像进行三角测量,以确定在给定的飞行时间内飞行高尔夫球在空间中的确切物理位置。
    • 8. 发明授权
    • Method and apparatus for low temperature HEMT-like material testing
    • 用于低温HEMT样材料测试的方法和装置
    • US5434505A
    • 1995-07-18
    • US99849
    • 1993-07-30
    • Yi-Ching Pao
    • Yi-Ching Pao
    • G01R31/265G01R31/28H01L21/66G01R27/04
    • G01R31/2831G01R31/265H01L22/14
    • To screen or test the electrical properties of HEMT-like wafers for their quality, the critical layer qualities of a wafer (16) are evaluated by measuring its conductivity (sigma or s) and mobility (mu or m) at upper and lower temperatures, which need only be sufficiently different as to remove uncertainties in the test data but, in practice, are room and liquid nitrogen temperatures. Novel equations show (1) that the crucial quality or merit factor (n.sub.s) the electron sheet density of two-dimensional electron gas (2DEG), can be determined by measuring the total layer conductivity (sigma or s) at the lower or liquid nitrogen temperature and mobility (mu or m) at the upper or room temperature and (2) by measuring overall layer effective mobility (mu or m) at both room and liquid nitrogen (the upper and lower) temperatures to provide a means to measure the value of the 2DEG density, n.sub.s which has better accuracy then where the temperature of mobility is only made at room temperature.
    • 为了筛选或测试HEMT样晶片的电气性能,通过测量其在上下温度下的电导率(sigma或s)和迁移率(mu或m)来评估晶片(16)的临界层质量, 这仅需要足够的不同以消除测试数据中的不确定性,但实际上是室温和液氮温度。 新颖的方程式显示(1)二维电子气体(2DEG)的电子薄片密度的关键质量或优点因子(ns)可以通过测量较低或液氮的总层电导率(sigma或s)来确定 温度和流动性(mu或m)在上或室温下测量,(2)通过测量室内和液氮(上,下)温度下的总层有效迁移率(μ或m),以提供测量值 的2DEG密度,ns具有更好的准确性,其中迁移率的温度仅在室温下进行。
    • 9. 发明授权
    • (110) GaAs microwave FET
    • (110)GaAs微波FET
    • US4939557A
    • 1990-07-03
    • US311903
    • 1989-02-15
    • Yi-Ching PaoJames S. Harris
    • Yi-Ching PaoJames S. Harris
    • H01L29/04H01L29/423H01L29/812
    • H01L29/8128H01L29/045H01L29/42316
    • A field effect transistor (FET) structure suitable for use at microwave frequencies is fabricated on a planar surface of a semi-insulating single crystal GaAs substrate which has been cut and polished to present the (110) surface. This orientation is selected because of its non-polar and other unique surface and interface properties. The (110) crystal axis is tilted from the normal of the planar surface in the direction to expose more of the (111) Ga face about 5.degree. to facilitate molecular beam epitaxial (MBE) growth of smooth, defect-free thin films. An elongate gate electrode is formed along the bottom of an anisotropically etched trench having a pair of longitudinal sidewalls, one vertical and the other tilted outwardly. The trench is selectively oriented on the substrate to facilitate such anisotropic etching. Source and drain electrodes are respectively formed proximate the outwardly tilted and vertical trench sidewalls thereby forming a FET with a higher drain-to-gate breakdown voltage combined with lower parasitic resistance between the source and gate electrode. The invention has demonstrated potential for high speed digital circuits as well a microwave power FET applications.
    • 在半绝缘单晶GaAs衬底的平面上制造适用于微波频率的场效应晶体管(FET)结构,其被切割和抛光以呈现(110)表面。 由于其非极性和其他独特的表面和界面性质,选择此取向。 (110)晶轴从平面的法线方向倾斜,以使(111)Ga面的多数暴露于约5°,以促进平滑无缺陷薄膜的分子束外延(MBE)生长。 沿着各向异性蚀刻的沟槽的底部形成细长的栅电极,其具有一对纵向侧壁,一个垂直的另一个向外倾斜。 沟槽选择性地定向在衬底上以促进这种各向异性蚀刻。 源电极和漏电极分别形成在向外倾斜和垂直沟槽侧壁附近,从而形成具有较高漏极 - 栅极击穿电压的FET,并与源电极和栅电极之间的较低寄生电阻相结合。 本发明已经证明了高速数字电路以及微波功率FET应用的潜力。