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1. 发明申请

WO2009155907A2 CONVERSION ELEMENT AND LIGHTING DEVICE 审中-公开
标题翻译：转换元件和灯
公开(公告)号：WO2009155907A2
公开(公告)日：2009-12-30
申请号：PCT/DE2009000883
申请日：2009-06-25
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BAUMANN FRANK , PETERSEN KIRSTIN , TAUTZ SOENKE , LELL ALFRED , STRAUSS UWE
发明人： BAUMANN FRANK , PETERSEN KIRSTIN , TAUTZ SOENKE , LELL ALFRED , STRAUSS UWE
IPC分类号： H01L33/50 , H01L33/64
CPC分类号： H01L33/501 , H01L33/641 , H01L33/644
摘要： In at least one embodiment of the conversion element (1) the latter comprises a light-permeable matrix material (2) into which heat-conducting particles (4) and at least one conversion means (3) are embedded, said conversion means (3) being designed to at least partially convert light of a certain wavelength to light of a different wavelength. The conversion means (3) and/or the heat-conducting particles (4) form heat-conducting paths P in the conversion element (1). Heat can be efficiently carried off from the conversion element (1) via the heat-conducting paths P formed by the heat-conducting particles (4) and the conversion means (3), thereby increasing the conversion efficiency of the conversion element.
摘要翻译：在转换元件中的至少一个实施例（1）本用半透明基体材料（2）设计成在Wärmeleitpartikel（4）和至少一个转换装置（3）被嵌入，其中所述转换装置（3）至少适于的波长的光将其转换成不同波长在一定程度上的光。由转换装置（3）和/或所述Wärmeleitpartikel（4）形成在WärmeleitpfadeP转换元件（1）。对这些由Wärmeleitpartikel（4）和变换装置（3）形成Wärmeleitpfade（P）可以从转换元件有效地消散热量（1）。这增加了转换元件增加转换效率。

2. 发明申请

WO2010069282A3 LUMINOUS MEANS AND PROJECTOR COMPRISING AT LEAST ONE LUMINOUS MEANS OF THIS TYPE 审中-公开
标题翻译：灯和投影仪至少有一个这样的灯
公开(公告)号：WO2010069282A3
公开(公告)日：2010-11-11
申请号：PCT/DE2009001448
申请日：2009-10-19
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
发明人： LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
IPC分类号： H04N9/31
CPC分类号： H04N9/3161 , H01S5/005 , H01S5/02292 , H01S5/4093 , H04N9/3129
摘要： In at least one embodiment of the luminous means (1), the latter comprises at least one semiconductor laser (2) which is designed to emit a primary radiation (P) having a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the luminous means (1) comprises at least one conversion means (3) which is disposed downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) having a greater wavelength that is different from the primary radiation (P). In this case, the radiation (R) emitted by the luminous means (1) exhibits an optical coherence length amounting to at most 50 µm.
摘要翻译：在发光装置（1）的至少一个实施例中，这包括至少一个半导体激光器（2），该半导体激光器被设置为发射波长在360nm和485nm之间（包括端值）的初级辐射（P）。此外，所述发光装置（1）包括至少一个转换装置（3），半导体激光器（2）的下游，并适于至少一个初级辐射（P）的成次级辐射（S）与所述初级辐射（P）不同的一个部分，转换更大的波长。由发光装置（1）发射的辐射（R）表现出至多50μm的光学相干长度。

3. 发明申请

WO0139282A3 OPTICAL SEMICONDUCTOR DEVICE COMPRISING A MULTIPLE QUANTUM WELL STRUCTURE 审中-公开
标题翻译：具有多量子板结构的光学半导体器件
公开(公告)号：WO0139282A3
公开(公告)日：2001-12-06
申请号：PCT/DE0004089
申请日：2000-11-20
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
发明人： HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS-JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
IPC分类号： H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： The invention relates to an optical semiconductor device comprising a multiple quantum well structure, in which well layers and barrier layers consisting of different types of semiconductor layers are stacked alternately on top of one another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation to the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together with the barrier layers (6b) form a superlattice for said active quantum well layer.
摘要翻译：具有多量子阱结构的光学半导体器件堆叠在阱层和不同类型的半导体层的势垒层交替层叠，所述阱层（6A）的基础上，具有第一电子能量和势垒层的氮化物半导体材料的第一组合物（6b）中的一个的氮化物半导体材料的第二组合物被提供相对于所述第一电子能量更高的电子能量，其中一个辐射量子阱有源层（图6c）的下游布置为在生长的方向，为此，上游基本上无辐射阱层（6a）和阻挡层（6b）的形成的超晶格看到，

4. 发明申请

WO2009036730A2 OPTO-ELECTRONIC SEMICONDUCTOR CHIP HAVING QUANTUM WELL STRUCTURE 审中-公开
标题翻译：具有量子头结构的光电子半导体芯片
公开(公告)号：WO2009036730A2
公开(公告)日：2009-03-26
申请号：PCT/DE2008001445
申请日：2008-08-29
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , SCHILLGALIES MARC , RUMBOLZ CHRISTIAN , EICHLER CHRISTOPH , LELL ALFRED , AVRAMESCU ADRIAN STEFAN , BRUEDERL GEORG , STRAUSS UWE
发明人： SCHILLGALIES MARC , RUMBOLZ CHRISTIAN , EICHLER CHRISTOPH , LELL ALFRED , AVRAMESCU ADRIAN STEFAN , BRUEDERL GEORG , STRAUSS UWE
IPC分类号： H01S5/343 , H01L33/06
CPC分类号： H01L33/06 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor chip, which has a radiation-emitting semiconductor layer sequence (1) with an active zone (120). The active zone comprises a first quantum well layer (3), a second quantum well layer (4), and two end barrier layers (51). The first quantum well layer and the second quantum well layer are disposed between the two end barrier layers. The active zone has a semiconductor material, which comprises at least one first and a second component. The fraction of the first component in the semiconductor material of the two end barrier layers is lower than in the first and second quantum well layers. Compared to the first quantum well layer, the second quantum well layer has either a lower layer thickness and a larger fraction of the first component of the semiconductor material, or a higher or the same layer thickness and a lower fraction of the first component of the semiconductor material.
摘要翻译：公开了一种光电子半导体芯片，其具有带有有源区（120）的发射辐射的半导体层序列（1）。有源区包括第一量子阱层（3），第二量子阱层（4）和两个终止势垒层（51）。第一量子阱层和第二量子阱层设置在两个终止势垒层之间。有源区包括含有至少第一和第二组分的半导体材料。两个终止势垒层的半导体材料中第一组分的比例低于第一和第二量子阱层中的比例。与第一量子阱层相比，第二量子阱层具有较小的层厚度和较大比例的半导体材料的第一组分或者较大或相同的层厚度以及较小比例的半导体材料的第一组分。

5. 发明申请

WO2009039811A3 RADIATION-EMITTING SEMICONDUCTOR CHIP 审中-公开
标题翻译：辐射发射半导体芯片
公开(公告)号：WO2009039811A3
公开(公告)日：2009-09-03
申请号：PCT/DE2008001423
申请日：2008-08-27
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , EICHLER CHRISTOPH , RUMBOLZ CHRISTIAN
发明人： LELL ALFRED , EICHLER CHRISTOPH , RUMBOLZ CHRISTIAN
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip (1), which has an active zone (2) for generating radiation having the wavelength lambda and a structured region (3) having structure elements disposed at irregular intervals, said elements comprising a first material having a first refractive index n1 and surrounded by a medium comprising a second material having a second refractive index n2. Furthermore, a method for producing such a semiconductor chip is provided.
摘要翻译：本发明涉及一种发射辐射的半导体芯片（1）具有用于产生波长为λ的辐射，并且结构化的区域的活性区域（2）（3）与不规则地排列，其包括具有第一折射率n1和所述第一种材料的结构元件被具有第二折射率n2的第二材料的介质包围。此外，指定了用于制造这种半导体芯片的方法。

6. 发明申请

WO2011069769A3 LASER DIODE ASSEMBLY AND METHOD FOR PRODUCING A LASER DIODE ASSEMBLY 审中-公开
标题翻译：激光二极管布置和制造激光二极管布置的方法
公开(公告)号：WO2011069769A3
公开(公告)日：2011-11-10
申请号：PCT/EP2010067271
申请日：2010-11-11
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , STRASSBURG MARTIN , LELL ALFRED
发明人： STRASSBURG MARTIN , LELL ALFRED
IPC分类号： H01S5/323 , H01S5/40
CPC分类号： H01S5/4043 , H01S5/2068 , H01S5/22 , H01S5/227 , H01S5/3063 , H01S5/3095 , H01S5/32341 , H01S5/405 , H01S5/4087
摘要： The invention relates to a laser diode assembly having a semiconductor substrate (2; 101; 201; 301; 72), at least two laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) each having one active zone (6, 12; 105, 109, 113; 207, 213; 307, 311; 76, 82, 88) and at least one translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85). According to the invention, the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) and the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85) are grown up monolithically on the semiconductor substrate (2; 101; 201; 301; 72). The laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) are electrically conductively connected to each other by means of the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85). The laser diodes (26a, 26b, 27a, 27b; 36a, 36b, 37a, 37b; 46a, 46b, 47a, 47b; 66a, 66b, 67a, 67b; 94a, 94b, 95a, 95b, 96a, 96b) formed from the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) have a two-dimensional structure.
摘要翻译：它是一种激光二极管组件，包括： - 一个半导体基片（2; 101; 201; 301; 72）， - 至少两个激光叠层（17，18; 117，118，119; 217,218; 317，318; 97，98，99 ），每个有源区（6,12; 105，109，113; 207，213; 307，311; 76，82，88），以及 - 至少一个透光性欧姆接触（9; 107，111; 204，210; 304 ，309; 79，85）。激光堆（17，18; 117，118，119; 217,218; 317，318; 97，98，99）和所述透光性欧姆接触（9; 107，111; 204，210; 304，309; 79，85 ）在半导体衬底（2; 101; 201; 301; 72）上单片生长。激光堆（17，18; 117，118，119; 217,218; 317，318; 97，98,99）（通过透光欧姆接触9; 107,111; 204，210; 304，309; 79， 85）以导电方式相互连接。从激光叠层（17，18; 117，118，119; 217,218; 317，318; 97，98，99）形成的激光二极管（26A，26B，27A，27B; 36A，36B，37A，37B; 46A， 46B，47A，47B; 66A，66B，67A，67B; 94A，94B，95A，95B，96A，96B）具有一个二维结构。

7. 发明申请

WO2012150132A3 LASER LIGHT SOURCE 审中-公开
标题翻译：激光光源
公开(公告)号：WO2012150132A3
公开(公告)日：2013-03-07
申请号：PCT/EP2012057073
申请日：2012-04-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EICHLER CHRISTOPH , DINI DIMITRI , LELL ALFRED
发明人： EICHLER CHRISTOPH , DINI DIMITRI , LELL ALFRED
IPC分类号： H01S5/22 , H01S5/10 , H01S5/223 , H01S5/227
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0217 , H01S5/0287 , H01S5/065 , H01S5/101 , H01S5/1014 , H01S5/1017 , H01S5/1064 , H01S5/2022 , H01S5/2031 , H01S5/2059 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2222 , H01S5/2231 , H01S5/2275 , H01S5/34326 , H01S5/34333 , H01S2301/166 , H01S2301/176 , H01S2301/185
摘要： The invention relates to a laser light source having a ridge waveguide structure, comprising a semi-conductor layer sequence (10) having a plurality of functional layers (4) and an active region (45) that is suitable for generating laser light during operation, wherein at least one of the functional layers (4) is designed as a ridge (11) of the ridge waveguide structure, and wherein the semiconductor layer sequence (10) has a mode filter structure (6) that is formed as part of the ridge (11) and/or along a main extension plane of the functional layers (4) next to the ridge (11) and/or perpendicular to the main extension plane of the functional layers (4) below the ridge (11).
摘要翻译：它是用一个脊形波导结构，具有具有多个功能层（4）和其适于产生操作期间激光光的有源区（45）的半导体层序列（10）的激光光源，所述功能层的方法，其中至少一种（指定 4）11形成为脊形波导结构的腹板（11），并且其中所述半导体层序列（10）包括模滤波器结构（6），作为网络中的一部分（11）和/或（沿着官能4层的主延伸面）旁边的幅材（）被形成和/或垂直于所述功能层（4）的幅材（11下方的主平面）。

8. 发明申请

WO03019637A3 METHOD FOR THERMAL TREATMENT OF THE SURFACE LAYER OF A SEMICONDUCTOR BY MEANS OF A PULSED LASER 审中-公开
标题翻译：方法用于半导体的表面处理用激光脉冲的AID热处理
公开(公告)号：WO03019637A3
公开(公告)日：2003-10-02
申请号：PCT/DE0202981
申请日：2002-08-14
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BAUR JOHANNES , BRUEDERL GEORG , LELL ALFRED , NEU WALTER , OBERSCHMID RAIMUND
发明人： BAUR JOHANNES , BRUEDERL GEORG , LELL ALFRED , NEU WALTER , OBERSCHMID RAIMUND
IPC分类号： H01L21/28 , H01L21/268 , H01L21/324 , B23K26/00 , H01L21/225 , H01L29/45 , H01L33/00
CPC分类号： H01L21/3245 , H01L21/268
摘要： The invention relates to a method for heat treating a surface layer (4) on a semiconductor substrate (5). Laser pulses (2), generated by a laser (1), are delivered to the surface layer (4). Said method permits, in particular, ohmic contacts to III-V compound semiconductors to be produced.
摘要翻译：本发明涉及一种用于在半导体衬底（5）上的表面层（4）的热处理方法。被排出到表面层（4）的激光脉冲（2），其由一激光器（1）中产生。根据该方法，特别是欧姆接触到III-V族化合物半导体可以制造。

9. 发明申请

WO2012048962A3 EDGE-EMITTING SEMICONDUCTOR LASER DIODE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：边缘发射半导体激光二极管和方法及其
公开(公告)号：WO2012048962A3
公开(公告)日：2013-01-10
申请号：PCT/EP2011065477
申请日：2011-09-07
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , NELZ CHRISTOPH , RUMBOLZ CHRISTIAN , HARTAUER STEFAN
发明人： LELL ALFRED , NELZ CHRISTOPH , RUMBOLZ CHRISTIAN , HARTAUER STEFAN
IPC分类号： H01S5/223 , H01S5/227
CPC分类号： H01S5/2202 , H01S5/0425 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S5/4031 , H01S2301/176
摘要： The invention relates to an edge-emitting semiconductor laser diode (1) comprising an epitactic semiconductor layer stack (2) and a planarization layer (3). The semiconductor layer stack (2) comprises a main body (2a) and a ridge waveguide (2b), wherein the main body (2a) comprises an active layer (2c) for generating electromagnetic radiation. The planarization layer (3) embeds the ridge waveguide (2b) such that a surface (21) of the ridge waveguide (2b) and a surface (22) of the planarization layer (3) form a flat main surface (4). The invention further relates to a method for producing such a semiconductor laser diode (1).
摘要翻译：（2）和平坦化层（3），提供了包含一个半导体外延层堆叠的边缘发射半导体激光二极管（1）。半导体层堆叠（2）具有基体（2a）和一个脊形波导（2b）中，其特征在于，具有用于产生电磁辐射的有源层（2c）的所述基体（2a）中。所述平坦化层（3）嵌入的脊形波导（2b）的一个，使得脊形波导（2b）和所述平坦化层（3）的表面（22）的表面（21）具有平坦的主表面（4）的形式。此外，提供了用于制造这样的半导体激光二极管（1）的方法。

10. 发明申请

WO0163709A3 SEMICONDUCTOR COMPONENT FOR THE EMISSION OF ELECTROMAGNETIC RADIATION AND METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：半导体部件的电磁辐射，为发射和方法及其
公开(公告)号：WO0163709A3
公开(公告)日：2002-03-14
申请号：PCT/DE0100706
申请日：2001-02-23
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , LUFT JOHANN , HAERLE VOLKER , HAHN BERTHOLD
发明人： LELL ALFRED , LUFT JOHANN , HAERLE VOLKER , HAHN BERTHOLD
IPC分类号： H01L33/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： H01S5/2232 , H01S5/2063 , H01S5/2205 , H01S5/2215 , H01S5/2216 , H01S5/223 , H01S5/32341
摘要： According to the invention, a semiconductor component is produced for the emission of electromagnetic radiation, in particular, light, which is characterised by comprising an active layer for production of radiation, a p contact, electrically connected to the active layer, an n contact, electrically connected to the active layer and a current limiting structure for the definition of a current path, whereby the current limiting structure is provided between the n contact and the active layer.
摘要翻译：根据本发明，用于电磁辐射的发射的半导体器件，特别是光，提供了具有以下特征; 用于产生辐射的有源层，其导电地连接到所述有源层的p接触，n接触，其导电地连接到所述有源层，以及用于限定的电流路径的电流限制结构，所述n个之间的电流限制结构 - 接触并且被设置在活性层。

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