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1. 发明申请

WO2009036730A2 OPTO-ELECTRONIC SEMICONDUCTOR CHIP HAVING QUANTUM WELL STRUCTURE 审中-公开
标题翻译：具有量子头结构的光电子半导体芯片
公开(公告)号：WO2009036730A2
公开(公告)日：2009-03-26
申请号：PCT/DE2008001445
申请日：2008-08-29
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , SCHILLGALIES MARC , RUMBOLZ CHRISTIAN , EICHLER CHRISTOPH , LELL ALFRED , AVRAMESCU ADRIAN STEFAN , BRUEDERL GEORG , STRAUSS UWE
发明人： SCHILLGALIES MARC , RUMBOLZ CHRISTIAN , EICHLER CHRISTOPH , LELL ALFRED , AVRAMESCU ADRIAN STEFAN , BRUEDERL GEORG , STRAUSS UWE
IPC分类号： H01S5/343 , H01L33/06
CPC分类号： H01L33/06 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor chip, which has a radiation-emitting semiconductor layer sequence (1) with an active zone (120). The active zone comprises a first quantum well layer (3), a second quantum well layer (4), and two end barrier layers (51). The first quantum well layer and the second quantum well layer are disposed between the two end barrier layers. The active zone has a semiconductor material, which comprises at least one first and a second component. The fraction of the first component in the semiconductor material of the two end barrier layers is lower than in the first and second quantum well layers. Compared to the first quantum well layer, the second quantum well layer has either a lower layer thickness and a larger fraction of the first component of the semiconductor material, or a higher or the same layer thickness and a lower fraction of the first component of the semiconductor material.
摘要翻译：公开了一种光电子半导体芯片，其具有带有有源区（120）的发射辐射的半导体层序列（1）。有源区包括第一量子阱层（3），第二量子阱层（4）和两个终止势垒层（51）。第一量子阱层和第二量子阱层设置在两个终止势垒层之间。有源区包括含有至少第一和第二组分的半导体材料。两个终止势垒层的半导体材料中第一组分的比例低于第一和第二量子阱层中的比例。与第一量子阱层相比，第二量子阱层具有较小的层厚度和较大比例的半导体材料的第一组分或者较大或相同的层厚度以及较小比例的半导体材料的第一组分。

2. 发明申请

WO2009039811A3 RADIATION-EMITTING SEMICONDUCTOR CHIP 审中-公开
标题翻译：辐射发射半导体芯片
公开(公告)号：WO2009039811A3
公开(公告)日：2009-09-03
申请号：PCT/DE2008001423
申请日：2008-08-27
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , EICHLER CHRISTOPH , RUMBOLZ CHRISTIAN
发明人： LELL ALFRED , EICHLER CHRISTOPH , RUMBOLZ CHRISTIAN
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip (1), which has an active zone (2) for generating radiation having the wavelength lambda and a structured region (3) having structure elements disposed at irregular intervals, said elements comprising a first material having a first refractive index n1 and surrounded by a medium comprising a second material having a second refractive index n2. Furthermore, a method for producing such a semiconductor chip is provided.
摘要翻译：本发明涉及一种发射辐射的半导体芯片（1）具有用于产生波长为λ的辐射，并且结构化的区域的活性区域（2）（3）与不规则地排列，其包括具有第一折射率n1和所述第一种材料的结构元件被具有第二折射率n2的第二材料的介质包围。此外，指定了用于制造这种半导体芯片的方法。

3. 发明申请

WO2007121735A3 COMPOSITE SUBSTRATE, AND METHOD FOR THE PRODUCTION OF A COMPOSITE SUBSTRATE 审中-公开
标题翻译：复合基板及其制造方法的复合基板
公开(公告)号：WO2007121735A3
公开(公告)日：2008-03-13
申请号：PCT/DE2007000725
申请日：2007-04-20
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , HAERLE VOLKER , STRAUSS UWE , BRUEDERL GEORG , EICHLER CHRISTOPH , AVRAMESCU ADRIAN
发明人： HAERLE VOLKER , STRAUSS UWE , BRUEDERL GEORG , EICHLER CHRISTOPH , AVRAMESCU ADRIAN
IPC分类号： H01L21/20 , H01L21/762 , H01L31/00 , H01L33/00
CPC分类号： H01L31/184 , H01L21/76254 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y02E10/544
摘要： Disclosed is a composite substrate (1) comprising a substrate member (2) and a wear layer (31) that is attached to the substrate member (2). A planarizing layer (4) is disposed between the wear layer (31) and the substrate member (2). Also disclosed is a method for producing a composite substrate (1), in which a planarizing layer (4) is applied to a previously provided wear substrate (3). The wear substrate (3) is attached to a substrate member (2) for the composite substrate (1). The wear substrate (3) is then separated such that a wear layer (31) of the wear substrate (3) for the composite substrate (1) remains on the substrate member (2).
摘要翻译：本发明提供一种复合衬底（1），具有基板主体（2）和一个在基板主体（2）固定到穿层（31），其中，所述耐磨层（31）和所述基板主体（2）之间被布置在平坦化层上（4）。此外，在其中设置（3）提供的平坦化层（4）施加一个有用的基片上制造的复合基板（1）的方法。有用的基片（3）被用于复合基板安装在基板主体（2）（1）。随后，将有用的衬底（3）分离出，其中，对于所述基板主体上的复合衬底（1）有用的衬底（3）的耐磨层（31）保持（2）。

4. 发明申请

WO2010069282A3 LUMINOUS MEANS AND PROJECTOR COMPRISING AT LEAST ONE LUMINOUS MEANS OF THIS TYPE 审中-公开
标题翻译：灯和投影仪至少有一个这样的灯
公开(公告)号：WO2010069282A3
公开(公告)日：2010-11-11
申请号：PCT/DE2009001448
申请日：2009-10-19
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
发明人： LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
IPC分类号： H04N9/31
CPC分类号： H04N9/3161 , H01S5/005 , H01S5/02292 , H01S5/4093 , H04N9/3129
摘要： In at least one embodiment of the luminous means (1), the latter comprises at least one semiconductor laser (2) which is designed to emit a primary radiation (P) having a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the luminous means (1) comprises at least one conversion means (3) which is disposed downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) having a greater wavelength that is different from the primary radiation (P). In this case, the radiation (R) emitted by the luminous means (1) exhibits an optical coherence length amounting to at most 50 µm.
摘要翻译：在发光装置（1）的至少一个实施例中，这包括至少一个半导体激光器（2），该半导体激光器被设置为发射波长在360nm和485nm之间（包括端值）的初级辐射（P）。此外，所述发光装置（1）包括至少一个转换装置（3），半导体激光器（2）的下游，并适于至少一个初级辐射（P）的成次级辐射（S）与所述初级辐射（P）不同的一个部分，转换更大的波长。由发光装置（1）发射的辐射（R）表现出至多50μm的光学相干长度。

5. 发明申请

WO2011104274A3 OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开
标题翻译：光电子半导体芯片
公开(公告)号：WO2011104274A3
公开(公告)日：2011-12-01
申请号：PCT/EP2011052681
申请日：2011-02-23
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EICHLER CHRISTOPH , LERMER TERESA , AVRAMESCU ADRIAN STEFAN
发明人： EICHLER CHRISTOPH , LERMER TERESA , AVRAMESCU ADRIAN STEFAN
IPC分类号： H01S5/343 , H01S5/20
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/0655 , H01S5/2009 , H01S5/2027 , H01S5/3211 , H01S5/34333 , H01S2301/18
摘要： In at least one embodiment of the optoelectronic semiconductor chip (1) the same comprises a substrate (2) and a semiconductor layer sequence (3) which is epitaxially grown on the substrate (2). The semiconductor layer sequence (3) is based on a nitride compound semiconductor material and includes at least one active zone (4) for generating electromagnetic radiation and at least one waveguide layer (5) which adjoins the active zone (4) indirectly or directly, thereby forming a waveguide (45). The semiconductor layer sequence (4) further comprises a p-cladding (6p) adjoining the waveguide layer (4) on a p-doped side or/and an n-cladding (6n) on an n-doped side of the active zone (4). The waveguide layer (5) adjoins the cladding (6n, 6p) indirectly or directly. An effective refractive index (neff) of a mode (M) passing through the waveguide is higher than a refractive index of the substrate (2).
摘要翻译：在载体（2）的光电子半导体芯片（1）的至少一个实施例，并且所述载体（2）上生长的半导体层序列（3）。半导体层序列（3）基于氮化物的化合物半导体材料，并且包括至少一个有源区（4），用于产生电磁辐射和至少一个波导层（5），其直接或间接地邻接所述有源区（4），其中一个波导（ 45）形成。此外，半导体层序列（3）包括一个以上的掺杂p侧和/或n覆层（6 N）的波导层（4）接壤p覆层（6P）在有源区（4）的n型掺杂侧上。波导层（5）间接或直接毗邻包层（6N，6P）上。在波导（M）引导的模式的有效折射率（夫）在这种情况下比所述载体（2）的折射率更大。

6. 发明申请

WO2012150132A3 LASER LIGHT SOURCE 审中-公开
标题翻译：激光光源
公开(公告)号：WO2012150132A3
公开(公告)日：2013-03-07
申请号：PCT/EP2012057073
申请日：2012-04-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EICHLER CHRISTOPH , DINI DIMITRI , LELL ALFRED
发明人： EICHLER CHRISTOPH , DINI DIMITRI , LELL ALFRED
IPC分类号： H01S5/22 , H01S5/10 , H01S5/223 , H01S5/227
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0217 , H01S5/0287 , H01S5/065 , H01S5/101 , H01S5/1014 , H01S5/1017 , H01S5/1064 , H01S5/2022 , H01S5/2031 , H01S5/2059 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2222 , H01S5/2231 , H01S5/2275 , H01S5/34326 , H01S5/34333 , H01S2301/166 , H01S2301/176 , H01S2301/185
摘要： The invention relates to a laser light source having a ridge waveguide structure, comprising a semi-conductor layer sequence (10) having a plurality of functional layers (4) and an active region (45) that is suitable for generating laser light during operation, wherein at least one of the functional layers (4) is designed as a ridge (11) of the ridge waveguide structure, and wherein the semiconductor layer sequence (10) has a mode filter structure (6) that is formed as part of the ridge (11) and/or along a main extension plane of the functional layers (4) next to the ridge (11) and/or perpendicular to the main extension plane of the functional layers (4) below the ridge (11).
摘要翻译：它是用一个脊形波导结构，具有具有多个功能层（4）和其适于产生操作期间激光光的有源区（45）的半导体层序列（10）的激光光源，所述功能层的方法，其中至少一种（指定 4）11形成为脊形波导结构的腹板（11），并且其中所述半导体层序列（10）包括模滤波器结构（6），作为网络中的一部分（11）和/或（沿着官能4层的主延伸面）旁边的幅材（）被形成和/或垂直于所述功能层（4）的幅材（11下方的主平面）。

7. 发明申请

WO2009121315A2 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：半导体部件和方法的半导体元件
公开(公告)号：WO2009121315A2
公开(公告)日：2009-10-08
申请号：PCT/DE2009000334
申请日：2009-03-09
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EICHLER CHRISTOPH , STRAUSS UWE
发明人： EICHLER CHRISTOPH , STRAUSS UWE
IPC分类号： H01S5/22
CPC分类号： H01L22/10 , H01L22/12 , H01S5/22 , H01S2301/173
摘要： The invention relates to a semiconductor component with a semiconductor body (2) having a semiconductor layer sequence which has an active region (21) for the generation of coherent radiation and an indicator layer (3). On the side facing away from the active region of an interface (30) that delimits some sections of the semiconductor body (2) in the vertical direction, the semiconductor body (2) comprises a web-like region (4) which extends in the vertical direction between the interface (30) and a surface (40) of the semiconductor body (2). The indicator layer (3) has a material composition that differs from that of the material of the web-like region (4), which adjoins the indicator layer (3). The distance of the indicator layer (3) from the surface (40) is not greater than a distance of the interface (30) from the surface (40). The invention further relates to a method for producing a semiconductor component.
摘要翻译：提供了一种半导体器件，包括具有半导体层序列，其是一种用于产生在有源区（21）和指示层（3）的相干辐射的半导体主体（2）。从半导体主体（2）在垂直方向上的边界表面（30）部分地限定，所述半导体主体（2），以一个幅状区域（4）中的边界表面（30）之间的垂直方向上延伸和表面的有源区远程侧该半导体主体（2）的（40）。指示剂层（3）具有一个材料组合物从该指示层（3）的不同邻接幅状区域的材料（4）是不同的。从表面（40）的指示层（3）的距离至多为从表面（40）的边界表面（30）之间的距离大。此外，提供了一种制造半导体器件的方法。

8. 发明申请

WO2007121739A3 OPTOELECTRONIC SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：光电半导体器件
公开(公告)号：WO2007121739A3
公开(公告)日：2008-03-13
申请号：PCT/DE2007000740
申请日：2007-04-25
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EICHLER CHRISTOPH , MILLER STEPHAN , STRAUSS UWE , HAERLE VOLKER , SABATHIL MATTHIAS
发明人： EICHLER CHRISTOPH , MILLER STEPHAN , STRAUSS UWE , HAERLE VOLKER , SABATHIL MATTHIAS
IPC分类号： H01L33/00 , H01L33/22 , H01L33/40 , H01L33/46
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Disclosed is an optoelectronic semiconductor component comprising a supporting substrate as well as an intermediate layer that provides adhesion between the supporting substrate and a component structure. The component structure encompasses an active layer that is used for generating radiation.
摘要翻译：它是一种光电子半导体器件，其包括： - 支撑基底， - 促进所述载体基板和器件结构，其中所述装置结构包括用于产生辐射，指定的有源层之间的粘附性的中间层。

9. 发明申请

WO2009103266A2 OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY 审中-公开
标题翻译：光电子半导体本体及其制造方法的光电子半导体本体
公开(公告)号：WO2009103266A2
公开(公告)日：2009-08-27
申请号：PCT/DE2009000191
申请日：2009-02-11
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BRUENINGHOFF STEFANIE , EICHLER CHRISTOPH
发明人： BRUENINGHOFF STEFANIE , EICHLER CHRISTOPH
IPC分类号： H01L21/782 , H01L33/00 , H01L33/20 , H01L33/44
CPC分类号： H01L33/0075 , H01L33/20 , H01L33/44 , H01S5/0207 , H01S5/32341 , H01S2304/12
摘要： The invention relates to an optoelectronic semiconductor body comprising a substrate (10), a first primary surface (12) of which having in a first region (14) a series of epitaxial semiconductor layers (20) for generating electromagnetic radiation and in a second region (22) adjoining the first (14) a first trench (24) and at least a second trench (30) located outside the first region (14). The invention also relates to an optoelectronic semiconductor body and to a method for producing an optoelectronic semiconductor body.
摘要翻译：的光电子半导体本体包括在第一主表面（12）的基板（10）在第一区域（14），适于产生电磁辐射，外延半导体层序列（20）和相邻的一对第一区域（14）第二区域（22）具有一个第一沟槽（24），并且其被布置在第一区域（14）之外的至少一个第二沟槽（30）。本发明还涉及一种光电子半导体本体和用于制造光电子半导体本体的方法。

10. 发明申请

WO2008135013A3 SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR CHIP 审中-公开
标题翻译：半导体芯片和一种用于生产半导体芯片
公开(公告)号：WO2008135013A3
公开(公告)日：2009-02-19
申请号：PCT/DE2008000703
申请日：2008-04-24
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , ENGL KARL , HOEPPEL LUTZ , EICHLER CHRISTOPH , SABATHIL MATTHIAS , WEIMAR ANDREAS
发明人： ENGL KARL , HOEPPEL LUTZ , EICHLER CHRISTOPH , SABATHIL MATTHIAS , WEIMAR ANDREAS
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： The invention relates to a semiconductor chip (1) having a semiconductor body (2) comprising a semiconductor layer sequence having an active region (25) designed to generate radiation. A mirror structure (3) is located on the semiconductor body (2), said mirror structure having a mirror layer (4) and a dielectric layer structure (5) located at least in areas between the mirror layer and the semiconductor body. A method for producing a semiconductor chip is also disclosed.
摘要翻译：有一个半导体芯片（1），包括一个半导体主体（2），其包括具有用于产生辐射有源区（25）所表示的半导体层序列。在半导体主体（2）有（3）包括反射镜层（4）的反射镜结构和至少部分地设置在反射镜层和介电层以在半导体本体结构（5）之间。此外，被指定用于制造半导体芯片的方法。

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