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1. 发明专利

JPH03204927A DRY-ETCHING PROCESS 失效
公开(公告)号：JPH03204927A
公开(公告)日：1991-09-06
申请号：JP34175089
申请日：1989-12-31
申请人： OMI TADAHIRO , MIKOSHIBA NOBUO , SEIKO INSTR INC
发明人： OMI TADAHIRO , MIKOSHIBA NOBUO , MUROTA JUNICHI , MATSUURA TAKASHI , UETAKE HIROAKI , FUKUDA KOICHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L29/78
摘要： PURPOSE:To do high anisotropic etching with high selecting at high anisotropy but also a sufficient rate for practical use by a method wherein a first gas containing a halogen gas and nitrogen gas is used for a first plasma etching and a second gas of a pure halogen gas or of a halogen-containing gas is used for a second plasma etching. CONSTITUTION:A protective film against sidewall is formed by a plasma of a gas containing a halogen gas and nitrogen gas to avoid the reaction of radicals of halogen atoms while the etching process of the bottom surface is accelerated by ion assist effect for enabling the surface to take anisotropical shape. Furthermore, the selectivity of masks or underneath oxide film can be enhanced by adding a bit of O2 gas. On the other hand, the surface of Si can be nitrified or oxidized to be insulated by adding N2 and O2 gas. Accordingly, in order to form a contact layer after etching process, the addition of N2 and O2 is stopped immediately before finishing the etching process while the etching process is performed using the plasma of a gas of a pure halogen gas or halogen-containing gas so as to improve the processing quality.

2. 发明专利

JPH02216040A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216040A
公开(公告)日：1990-08-28
申请号：JP3714189
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/207
摘要： PURPOSE:To measure the distribution of individual crystals by arranging a reflected electron beam diffraction electron gun, a photomultiplier and an arithmetic circuit to permits the determination of crystal bearings in faces thereof parallel and vertical to the surface of a sample. CONSTITUTION:Diffraction pattern is formed on a fluorescent screen 6 by a diffraction electron beam 5 resulting from an electron beam 4 emitted from a reflected electron beam diffraction electron gun 1. A signal from a diffraction spot is introduced to photomultipliers 10-12 through optical fibers 7-9 to be amplified and computed with an arithmetic circuit 13. Then, with the circuit 13, intensities of the diffraction spots undergo a multiplication processing by an optional constant and a addition/subtraction processing between the intensities of the diffraction spots subjected to the multiplication processing. A signal 14 as the results of the arithmetic processing is inputted into a CRT 15 as brightness signal. Then, a diffraction intensity image from the surface of a sample is displayed on the CRT 15 by a scan signal synchronizing a scan signal 16 of the electron beam from the electron gun 1. Thus, the fibers 7-9 are disposed under vacuum and a allowed to select optional diffraction spots mechanically.

3. 发明专利

JPH02216041A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216041A
公开(公告)日：1990-08-28
申请号：JP3714389
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201 , H01J37/295
摘要： PURPOSE:To observe a midway development of a variation in a grain boundary of a sample by performing an arithmetic processing of a diffraction pattern with the irradiation of the surface of a sample by an electron beam converged to a fine diameter at an angle of incidence almost parallel to the surface thereof. CONSTITUTION:The surface of a sample 3 is irradiated with an electron beam reduced to a fine diameter to observe a diffraction pattern. At this point, a relationship between intensities of the electron beam at a plurality of points on the diffraction pattern does not change while the electron beam 4 incident into the sample scans a monocrystalline area of the surface of the sample 3 but changes depending on a difference in a direction of crystal face of an adjacent crystal when the scanning is shifted thereto. This change in the relationship is extracted by an arithmetic processing of detection outputs at the points during one scanning by the electron beam. This allows clear recognition of a structure of a fine area of the surface of the sample 3 and a secular change in the structure and combined with functions of energization, heating and other treatments for the sample, a hourly change in the structure can be observed by tracking under various conditions of a fine area of the sample.

4. 发明专利

JPH02216042A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216042A
公开(公告)日：1990-08-28
申请号：JP3714489
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201
摘要： PURPOSE:To obtain information on a bearing and size of a crystal of a sample while enabling an analysis with high depth-wise resolutions by performing an arithmetic processing of a diffraction pattern as produced when the surface of a sample is irradiated with an electron beam converged to a fine diameter at an angle of incidence almost parallel with the surface thereof. CONSTITUTION:The surface of a sample 3 is irradiated with an electron beam converged to a fine diameter to observe a diffraction pattern. At this point, a relationship between intensities of electron beams at a plurality of points on the diffraction pattern does not change while a monocrystalline area in the surface of the sample 3 is scanned by an electron beam 4 incident into the sample 3 but changes depending on a difference in a direction or the like of a crystal face of an adjacent crystal when the scanning is shifted thereto. A change in this relationship is extracted by a arithmetic processing of a detection output at the points to be displayed two-dimensionally. Thus, only 10-20Angstrom is enough for the penetration depth of the electron beam 4 into the surface of the sample 3 to allow clear recognition of a construction of a fine area on the surface of the sample 3 and this is utilized to be combined with an ion etching of the surface of the sample 3 thereby enabling an structural analysis of the sample 3 with depth-resolutions at 10-20Angstrom .

5. 发明专利

JPH02216748A SAMPLE SURFACE UNEVENNESS OBSERVATION METHOD BY REFLECTION ELECTRON BEAM DIFFRACTION 失效
公开(公告)号：JPH02216748A
公开(公告)日：1990-08-29
申请号：JP3714289
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01B15/00 , G01B15/08 , G01N23/225 , H01J37/22 , H01J37/29 , H01J37/295
摘要： PURPOSE:To detect the unevenness on the surface of a sample by the atomic layer level, by scanning the designated area of the sample surface with the electron beams, detecting the intensity of the diffraction electron beams at a time at plural points in which the intensity is varied inversely at the atomic layer steps existing at the opposite surface of a diffraction pattern, and carrying out an operation between the intensities of plural diffraction electron beams. CONSTITUTION:The diameter of the incident electron beam 4 generated from an electron gun 1 for diffracting the reflection electron beam of a reflection high speed electron beam diffraction device is focused in order to observe its minute area, and the surface of a sample 3 loaded in a vacuum chamber 28 is scanned. The electron beam 4 from the electron gun 1 is injected to the surface of the sample 3 at the incident angle theta, and diffraction electron beams 5 depending on the crystal orientation and the plainness of the atomic layer level of the surface are generated. The electron beams 5 are injected to a fluorescent plate 6 for reflection electron beam diffraction spot observation. The output of the fluorescent plate 6 is added to an operation circuit 13 through photo-fibers 7-9, an operation is applied to the intensities between the diffraction electron beams detected simultanously, and the unevenness of the sample surface is detected by the atomic layer level.

6. 发明专利

JPH0374843A DEVICE AND METHOD FOR DRY ETCHING 失效
公开(公告)号：JPH0374843A
公开(公告)日：1991-03-29
申请号：JP21110689
申请日：1989-08-16
申请人： OMI TADAHIRO , SEIKO INSTR INC
发明人： OMI TADAHIRO , MIKOSHIBA NOBUO , MUROTA JUNICHI , MATSUURA TAKASHI , UETAKE HIROAKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve working accuracy for dry etching by measuring the potential produced on a sample during the etching through contacting a metal terminal directly with the rear surface of the sample and detecting the end point of the etching from the change of the potential. CONSTITUTION:A wafer 1 is fixed on a stage 1 provided in a reaction chamber. A metal terminal 3 is brought into sure contact with the wafer by the spring force of a coiled spring 5. The metal terminal 3 is received in a holder 4 and is not exposed to plasma space. The coiled spring 5 is also incorporated in the holder 4. The holder 4 is made of metal, and the inner and outer surfaces thereof are covered with an insulator. Measured potential is led out to the atmosphere side via a wiring 6 made of a coaxial cable and a feed through 7. A chamber 8 is grounded and is used as the potential reference. A voltage is measured by a monitoring device 9. When the end point is detected, a signal processing circuit 10 supplies a signal to a shutter driving circuit 11 to close a shutter, which was opened during the etching, to prevent the wafer 1 from being irradiated with plasma.

7. 发明专利

JPH0395953A ELECTROSTATIC HOLDING TYPE WAFER SUSCEPTOR 失效
公开(公告)号：JPH0395953A
公开(公告)日：1991-04-22
申请号：JP23394789
申请日：1989-09-07
申请人： OMI TADAHIRO , SEIKO INSTR INC
发明人： OMI TADAHIRO , MIKOSHIBA NOBUO , MUROTA JUNICHI , MATSUURA TAKASHI , UETAKE HIROAKI
IPC分类号： H01L21/683 , H01L21/68
摘要： PURPOSE:To enable fine machining on a wafer without generating variation of wafer temperature as time passes by housing an electrode coated with an insulation film into a metal holder where a part in contact with the wafer is coated with the insulation film. CONSTITUTION:The entire surface of one electrode 2 out of a pair of electrodes 2 and 3 is coated with an insulation film 4, is housed within a metal holder 5, and is in contact with a chamber at the grounding potential. A part of the metal holder 5 which is in contact with the wafer is coated with an insulation film 19 and is isolated from the mounted wafer. On the other hand, the electrode 3 is a solid round bar with a collar and can be moved slightly up and down, is allowed to surely contact the wafer by a coil spring 17, and can be removed easily when pressed from the rear side. A metal holder 6 is at the grounding potential and is insulated from the electrode 3 and the surface which is in contact with the wafer is coated with an insulation film. The electrodes 2 and 3 are connected to a DC high-voltage power supply 12 for electrostatic holding, apply DC bias to the wafer, and can apply a high frequency voltage using a matching circuit 14 and a high-frequency power supply 15.

8. 发明专利

GB2222721B COOLING SEMICONDUCTOR DEVICES 未知
公开(公告)号：GB2222721B
公开(公告)日：1993-07-28
申请号：GB8918867
申请日：1989-08-18
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO
IPC分类号： H01L23/36 , H01L23/367 , H01L23/373
摘要： The semiconductor device such as a MOSFET comprises a channel 2, a gate electrode 3, a source or drains and insulating layers 11-13, at least one of which is made of a material capable of conducting heat. The material may be ALN or BN and the gate insulator 4 may also be heat conductive. An assembly of semi conductor devices cooled by a layer of heat conductive material is also described. Air or liquid cooled fins may be attached to the device.

9. 发明专利

GB2214042B SPREAD-SPECTRUM COMMUNICATION APPARATUS 未知
公开(公告)号：GB2214042B
公开(公告)日：1992-09-23
申请号：GB8901143
申请日：1989-01-19
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , TOMIOKA TAKESHI
IPC分类号： H04B1/707 , H04B1/7087 , H04J13/00
摘要： In a spread-spectrum communication apparatus using a convolver as a correlator, demodulating processes in a receiver apparatus using a carrier and a PN code are performed under a non-synchronous condition.

10. 发明专利

GB2242069A Arrangement for cooling a semiconductor element 未知
公开(公告)号：GB2242069A
公开(公告)日：1991-09-18
申请号：GB9104316
申请日：1991-03-01
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO
IPC分类号： F28D9/00 , H01L23/467 , H01L23/473
摘要： One or a number of cooling structures 2 having microchannels through which a cooling fluid circulates are bonded to a heat producing semiconductor device 5. The fins are of a high thermal conductivity material such as aluminium or copper.

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