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1. 发明专利

JPH0374843A DEVICE AND METHOD FOR DRY ETCHING 失效
公开(公告)号：JPH0374843A
公开(公告)日：1991-03-29
申请号：JP21110689
申请日：1989-08-16
申请人： OMI TADAHIRO , SEIKO INSTR INC
发明人： OMI TADAHIRO , MIKOSHIBA NOBUO , MUROTA JUNICHI , MATSUURA TAKASHI , UETAKE HIROAKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve working accuracy for dry etching by measuring the potential produced on a sample during the etching through contacting a metal terminal directly with the rear surface of the sample and detecting the end point of the etching from the change of the potential. CONSTITUTION:A wafer 1 is fixed on a stage 1 provided in a reaction chamber. A metal terminal 3 is brought into sure contact with the wafer by the spring force of a coiled spring 5. The metal terminal 3 is received in a holder 4 and is not exposed to plasma space. The coiled spring 5 is also incorporated in the holder 4. The holder 4 is made of metal, and the inner and outer surfaces thereof are covered with an insulator. Measured potential is led out to the atmosphere side via a wiring 6 made of a coaxial cable and a feed through 7. A chamber 8 is grounded and is used as the potential reference. A voltage is measured by a monitoring device 9. When the end point is detected, a signal processing circuit 10 supplies a signal to a shutter driving circuit 11 to close a shutter, which was opened during the etching, to prevent the wafer 1 from being irradiated with plasma.

2. 发明专利

JPH03204927A DRY-ETCHING PROCESS 失效
公开(公告)号：JPH03204927A
公开(公告)日：1991-09-06
申请号：JP34175089
申请日：1989-12-31
申请人： OMI TADAHIRO , MIKOSHIBA NOBUO , SEIKO INSTR INC
发明人： OMI TADAHIRO , MIKOSHIBA NOBUO , MUROTA JUNICHI , MATSUURA TAKASHI , UETAKE HIROAKI , FUKUDA KOICHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L29/78
摘要： PURPOSE:To do high anisotropic etching with high selecting at high anisotropy but also a sufficient rate for practical use by a method wherein a first gas containing a halogen gas and nitrogen gas is used for a first plasma etching and a second gas of a pure halogen gas or of a halogen-containing gas is used for a second plasma etching. CONSTITUTION:A protective film against sidewall is formed by a plasma of a gas containing a halogen gas and nitrogen gas to avoid the reaction of radicals of halogen atoms while the etching process of the bottom surface is accelerated by ion assist effect for enabling the surface to take anisotropical shape. Furthermore, the selectivity of masks or underneath oxide film can be enhanced by adding a bit of O2 gas. On the other hand, the surface of Si can be nitrified or oxidized to be insulated by adding N2 and O2 gas. Accordingly, in order to form a contact layer after etching process, the addition of N2 and O2 is stopped immediately before finishing the etching process while the etching process is performed using the plasma of a gas of a pure halogen gas or halogen-containing gas so as to improve the processing quality.

3. 发明专利

JPH0395953A ELECTROSTATIC HOLDING TYPE WAFER SUSCEPTOR 失效
公开(公告)号：JPH0395953A
公开(公告)日：1991-04-22
申请号：JP23394789
申请日：1989-09-07
申请人： OMI TADAHIRO , SEIKO INSTR INC
发明人： OMI TADAHIRO , MIKOSHIBA NOBUO , MUROTA JUNICHI , MATSUURA TAKASHI , UETAKE HIROAKI
IPC分类号： H01L21/683 , H01L21/68
摘要： PURPOSE:To enable fine machining on a wafer without generating variation of wafer temperature as time passes by housing an electrode coated with an insulation film into a metal holder where a part in contact with the wafer is coated with the insulation film. CONSTITUTION:The entire surface of one electrode 2 out of a pair of electrodes 2 and 3 is coated with an insulation film 4, is housed within a metal holder 5, and is in contact with a chamber at the grounding potential. A part of the metal holder 5 which is in contact with the wafer is coated with an insulation film 19 and is isolated from the mounted wafer. On the other hand, the electrode 3 is a solid round bar with a collar and can be moved slightly up and down, is allowed to surely contact the wafer by a coil spring 17, and can be removed easily when pressed from the rear side. A metal holder 6 is at the grounding potential and is insulated from the electrode 3 and the surface which is in contact with the wafer is coated with an insulation film. The electrodes 2 and 3 are connected to a DC high-voltage power supply 12 for electrostatic holding, apply DC bias to the wafer, and can apply a high frequency voltage using a matching circuit 14 and a high-frequency power supply 15.

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