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1. 发明授权

US07256500B2 Semiconductor device using metal nitride as insulating film 有权
标题翻译：使用金属氮化物作为绝缘膜的半导体器件
公开(公告)号：US07256500B2
公开(公告)日：2007-08-14
申请号：US11362872
申请日：2006-02-28
申请人： Noriyuki Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
发明人： Noriyuki Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
摘要翻译：在半导体衬底上形成第一绝缘膜。在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。导电部件被埋在凹部中。提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。

2. 发明申请

US20090042386A1 Semiconductor device using metal nitride as insulating film and its manufacture method 有权
标题翻译：使用金属氮化物作为绝缘膜的半导体器件及其制造方法
公开(公告)号：US20090042386A1
公开(公告)日：2009-02-12
申请号：US12232944
申请日：2008-09-26
申请人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
发明人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
IPC分类号： H01L21/44
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
摘要翻译：在半导体衬底上形成第一绝缘膜。在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。导电部件被埋在凹部中。提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。

3. 发明申请

US20060145348A1 Semiconductor device using metal nitride as insulating film and its manufacture method 有权
公开(公告)号：US20060145348A1
公开(公告)日：2006-07-06
申请号：US11362872
申请日：2006-02-28
申请人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
发明人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
IPC分类号： H01L23/52
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.

4. 发明授权

US07042093B2 Semiconductor device using metal nitride as insulating film 有权
标题翻译：使用金属氮化物作为绝缘膜的半导体器件
公开(公告)号：US07042093B2
公开(公告)日：2006-05-09
申请号：US10352149
申请日：2003-01-28
申请人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
发明人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
摘要翻译：在半导体衬底上形成第一绝缘膜。在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。导电部件被埋在凹部中。提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。

5. 发明授权

US08067309B2 Semiconductor device using metal nitride as insulating film and its manufacture method 有权
标题翻译：使用金属氮化物作为绝缘膜的半导体器件及其制造方法
公开(公告)号：US08067309B2
公开(公告)日：2011-11-29
申请号：US12232944
申请日：2008-09-26
申请人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
发明人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
摘要翻译：在半导体衬底上形成第一绝缘膜。在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。导电部件被埋在凹部中。提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。

6. 发明申请

US20070252280A1 Semiconductor device using metal nitride as insulating film 审中-公开
公开(公告)号：US20070252280A1
公开(公告)日：2007-11-01
申请号：US11822463
申请日：2007-07-06
申请人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
发明人： Noriyoshi Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
IPC分类号： H01L23/52
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.

7. 发明授权

US06992005B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06992005B2
公开(公告)日：2006-01-31
申请号：US10819231
申请日：2004-04-07
申请人： Nobuyuki Ohtsuka , Noriyoshi Shimizu , Hisaya Sakai , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki
发明人： Nobuyuki Ohtsuka , Noriyoshi Shimizu , Hisaya Sakai , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki
IPC分类号： H01L29/72
CPC分类号： H01L21/76849 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76855 , H01L21/76858 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a multi-layered wiring structure containing a copper layer, comprises a first insulating film formed over a semiconductor substrate, a first copper pattern buried in the first insulating film, a cap layer formed on the first copper pattern and the first insulating film and made of a substance a portion of which formed on the first copper pattern has a smaller electrical resistance value than a portion formed on the first insulating film, second insulating films formed on the cap layer, and a second copper pattern buried in a hole or a trench, which is formed in the second insulating films on the first copper pattern; and connected electrically to the first copper pattern via the cap layer.
摘要翻译：一种具有包含铜层的多层布线结构的半导体器件，包括形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的第一铜图案，形成在第一铜图案上的帽层和第一绝缘层由形成在第一铜图案上的部分的物质制成的薄膜比形成在第一绝缘膜上的部分的电阻值小，形成在盖层上的第二绝缘膜和埋在孔中的第二铜图案或形成在第一铜图案上的第二绝缘膜中的沟槽; 并且经由盖层与第一铜图案电连接。

8. 发明授权

US06750541B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06750541B2
公开(公告)日：2004-06-15
申请号：US10127418
申请日：2002-04-23
申请人： Nobuyuki Ohtsuka , Noriyoshi Shimizu , Hisaya Sakai , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki
发明人： Nobuyuki Ohtsuka , Noriyoshi Shimizu , Hisaya Sakai , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki
IPC分类号： H01L2348
CPC分类号： H01L21/76849 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76855 , H01L21/76858 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a multi-layered wiring structure containing a copper layer, comprises a first insulating film formed over a semiconductor substrate, a first copper pattern buried in the first insulating film, a cap layer formed on the first copper pattern and the first insulating film and made of a substance a portion of which formed on the first copper pattern has a smaller electrical resistance value than a portion formed on the first insulating film, second insulating films formed on the cap layer, and a second copper pattern buried in a hole or a trench, which is formed in the second insulating films on the first copper pattern, and connected electrically to the first copper pattern via the cap layer.
摘要翻译：一种具有包含铜层的多层布线结构的半导体器件，包括形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的第一铜图案，形成在第一铜图案上的帽层和第一绝缘层由形成在第一铜图案上的部分的物质制成的薄膜比形成在第一绝缘膜上的部分的电阻值小，形成在盖层上的第二绝缘膜和埋在孔中的第二铜图案或沟槽，其形成在第一铜图案上的第二绝缘膜中，并经由盖层与第一铜图案电连接。

9. 发明授权

US09121833B2 Defect inspecting apparatus 有权
标题翻译：缺陷检查装置
公开(公告)号：US09121833B2
公开(公告)日：2015-09-01
申请号：US13551014
申请日：2012-07-17
申请人： Kazunori Anayama , Toshiyuki Suzuma , Yoshiyuki Nakao , Masami Ikeda , Kenta Sakai
发明人： Kazunori Anayama , Toshiyuki Suzuma , Yoshiyuki Nakao , Masami Ikeda , Kenta Sakai
IPC分类号： H04N7/18 , G01N21/952
CPC分类号： G01N21/952
摘要： A defect inspecting apparatus includes a first light source, a first image capture device that receives the reflection light emitted from the first light source and reflected by the outer peripheral surface of a lip part to grab the image of the outer peripheral surface of the lip part, a second light source, a second image capture device 8 that receives the reflection light emitted from the second light source and reflected by a load face to grab the image of the load face, a third light source, a third image capture device that receives the reflection light emitted from the third light source and reflected by a thread bottom face inspection zone 106 to grab the image of the thread bottom face inspection zone, and an inspection device for inspecting defects by processing the captured images grabbed by the first to third image capture devices.
摘要翻译：缺陷检查装置包括第一光源，第一图像捕获装置，其接收从第一光源发射并被唇部的外周面反射的反射光，以抓住唇部的外周面的图像，第二光源，第二图像捕获装置8，其接收从第二光源发射并被负载面反射以吸收负载面的图像的反射光;第三光源;第三图像捕获装置，其接收从第三光源发射并由线底面检查区域106反射的反射光，以抓取线底面检查区域的图像;以及检查装置，用于通过处理由第一至第三图像抓取的捕获图像来检查缺陷捕获设备。

10. 发明授权

US08552717B2 Eddy current testing method and eddy current testing apparatus 有权
标题翻译：涡流测试方法和涡流测试仪
公开(公告)号：US08552717B2
公开(公告)日：2013-10-08
申请号：US12531840
申请日：2008-03-17
申请人： Shigetoshi Hyodo , Yoshiyuki Nakao
发明人： Shigetoshi Hyodo , Yoshiyuki Nakao
IPC分类号： G01N27/82
CPC分类号： G01N27/9013
摘要： It is an object of the present invention to provide an eddy current testing apparatus capable of accurately detecting any flaws occurring in a columnar or cylindrical subject to be tested regardless of their extending directions, with the use of the same probe coil.The eddy current testing apparatus 100 according to the present invention comprises a spinning plate 1 and a probe coil 2 disposed on the spinning plate 1. The probe coil is a probe coil capable of obtaining a differential output about a scanning direction of a detection signal which corresponds to a detected eddy current induced in the subject to be tested. The spinning plate is disposed in such a position that a spinning center RC of the spinning plate faces with an axial center PC of the subject to be tested. A distance R between the spinning center of the spinning plate and a center of the probe coil is set so that a difference between a maximum amplitude of a differential output at an axially extending artificial flaw provided in the subject to be tested and a maximum amplitude of a differential output at a circumferentially extending artificial flaw provided in the subject to be tested falls within a predetermined range.
摘要翻译：本发明的目的是提供一种涡流测试装置，其能够使用相同的探针线圈来精确地检测在被测试的柱状或圆柱体中发生的任何缺陷，而不管其延伸方向如何。根据本发明的涡流检测装置100包括设置在纺丝板1上的纺丝板1和探针线圈2.探针线圈是能够获得关于检测信号的扫描方向的差分输出的探针线圈，对应于在待测试对象中感测的检测到的涡流。纺丝板被设置在纺纱板的纺纱中心RC与待测试对象的轴心中心PC相对的位置。将纺丝板的纺纱中心与探针线圈的中心之间的距离R设定为使被测试对象物中设置的轴向延伸的人造缺陷的差动输出的最大振幅与最大振幅在待测试对象中设置的周向延伸的人造缺陷的差分输出落在预定范围内。

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