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1. 发明授权

US09121833B2 Defect inspecting apparatus 有权
标题翻译：缺陷检查装置
公开(公告)号：US09121833B2
公开(公告)日：2015-09-01
申请号：US13551014
申请日：2012-07-17
申请人： Kazunori Anayama , Toshiyuki Suzuma , Yoshiyuki Nakao , Masami Ikeda , Kenta Sakai
发明人： Kazunori Anayama , Toshiyuki Suzuma , Yoshiyuki Nakao , Masami Ikeda , Kenta Sakai
IPC分类号： H04N7/18 , G01N21/952
CPC分类号： G01N21/952
摘要： A defect inspecting apparatus includes a first light source, a first image capture device that receives the reflection light emitted from the first light source and reflected by the outer peripheral surface of a lip part to grab the image of the outer peripheral surface of the lip part, a second light source, a second image capture device 8 that receives the reflection light emitted from the second light source and reflected by a load face to grab the image of the load face, a third light source, a third image capture device that receives the reflection light emitted from the third light source and reflected by a thread bottom face inspection zone 106 to grab the image of the thread bottom face inspection zone, and an inspection device for inspecting defects by processing the captured images grabbed by the first to third image capture devices.
摘要翻译：缺陷检查装置包括第一光源，第一图像捕获装置，其接收从第一光源发射并被唇部的外周面反射的反射光，以抓住唇部的外周面的图像，第二光源，第二图像捕获装置8，其接收从第二光源发射并被负载面反射以吸收负载面的图像的反射光;第三光源;第三图像捕获装置，其接收从第三光源发射并由线底面检查区域106反射的反射光，以抓取线底面检查区域的图像;以及检查装置，用于通过处理由第一至第三图像抓取的捕获图像来检查缺陷捕获设备。

2. 发明授权

US09291599B2 Magnetic testing method and apparatus 有权
标题翻译：磁测试方法及装置
公开(公告)号：US09291599B2
公开(公告)日：2016-03-22
申请号：US14238958
申请日：2012-08-15
申请人： Toshiyuki Suzuma , Yoshiyuki Nakao , Makoto Sakamoto , Yoshiyuki Oota
发明人： Toshiyuki Suzuma , Yoshiyuki Nakao , Makoto Sakamoto , Yoshiyuki Oota
IPC分类号： G01N27/82 , G01N27/83 , G01N27/90
CPC分类号： G01N27/82 , G01N27/83 , G01N27/902
摘要： A magnetic testing apparatus 100 according to the present invention comprises: a first magnetizing device 1 for applying a DC bias magnetic field to a test object P in substantially parallel to the direction in which a flaw F to be detected extends; a second magnetizing device 2 for applying an AC magnetic field to the test object P substantially perpendicularly to the direction in which the flaw F to be detected extends; and a detecting device 3 for detecting leakage flux produced by the magnetization of the test object P accomplished by the first magnetizing device 1 and the second magnetizing device 2.
摘要翻译：根据本发明的磁性测试装置100包括：第一磁化装置1，用于将基本上平行于待检测的缺陷F的方向延伸的测试对象P施加直流偏置磁场; 第二磁化装置2，用于将大致垂直于待检测的缺陷F的方向延伸的测试对象P的交流磁场施加; 以及检测装置3，用于检测由第一磁化装置1和第二磁化装置2实现的被测试物体P的磁化产生的漏磁通。

3. 发明申请

US20140191751A1 MAGNETIC TESTING METHOD AND APPARATUS 有权
标题翻译：磁性测试方法和装置
公开(公告)号：US20140191751A1
公开(公告)日：2014-07-10
申请号：US14238958
申请日：2012-08-15
申请人： Toshiyuki Suzuma , Yoshiyuki Nakao , Makoto Sakamoto , Yoshiuki Oota
发明人： Toshiyuki Suzuma , Yoshiyuki Nakao , Makoto Sakamoto , Yoshiuki Oota
IPC分类号： G01N27/82
CPC分类号： G01N27/82 , G01N27/83 , G01N27/902
摘要： A magnetic testing method and apparatus can accurately detect a flaw by magnetizing a test object to such a degree that the object becomes magnetically saturated while solving the problems of a large magnetizing device is required when only a DC magnetic field is applied and that the test object generates heat when only an AC magnetic field is applied.A magnetic testing apparatus comprises a first magnetizing device for applying a DC bias magnetic field to a test object P in substantially parallel to the direction in which a flaw F to be detected extends, a second magnetizing device for applying an AC magnetic field to the test object P substantially perpendicularly to the direction in which the flaw F to be detected extends, and a detecting device for detecting leakage flux produced by the magnetization of the test object P accomplished by the first and second magnetizing devices.
摘要翻译：磁性测试方法和装置可以通过将测试对象磁化以使物体变得磁饱和的程度来准确地检测缺陷，同时在仅施加DC磁场的同时解决大的磁化装置的问题，并且测试对象仅在施加交流磁场时产生热量。磁性测试装置包括：第一磁化装置，用于将大致平行于待检测的缺陷F的方向的测试对象P施加直流偏置磁场延伸的第二磁化装置，用于将AC磁场施加到测试的第二磁化装置物体P大体上垂直于待检测的缺陷F的方向延伸;以及检测装置，用于检测由第一和第二磁化装置实现的被测试物体P的磁化产生的漏磁通。

4. 发明申请

US20100126278A1 FLAW DETECTION TRACKING DEVICE FOR PIPE OR TUBE AND AUTOMATIC FLAW DETECTING APPARATUS FOR PIPE OR TUBE USING THE SAME 有权
标题翻译：用于管道或管道的FLAW检测跟踪装置和使用其的管道或管道的自动检测装置
公开(公告)号：US20100126278A1
公开(公告)日：2010-05-27
申请号：US12312962
申请日：2007-10-26
申请人： Hiroshi Kubota , Yoshiyuki Nakao , Masami Ikeda , Nobuyuki Mori , Hiroshi Sato
发明人： Hiroshi Kubota , Yoshiyuki Nakao , Masami Ikeda , Nobuyuki Mori , Hiroshi Sato
IPC分类号： G01N29/04 , G01B5/28 , G01N27/82
CPC分类号： G01N29/225 , G01N29/043 , G01N29/069 , G01N29/265 , G01N2291/2634
摘要： A tracking device is provided with a non-contact type displacement gauge, a positioner which moves a flaw detecting sensor within a plane perpendicular to an axial direction of a pipe or tube, and a positioning controller which controls the positioner. The positioning controller predicts a time until a portion of the pipe or tube whose displacement is measured by the displacement gauge reaches a predetermined position on a straight line extending in a Z-axis direction through a rotational center of the pipe or tube on the basis of the positional relationship between the displacement gauge and the flaw detecting sensor and a rotational speed of the pipe or tube; controls the positioner on the basis of the displacement measured by the displacement gauge and an operational delay time of the positioner in such a manner that the relative position of the flaw detecting sensor to the pipe or tube after the lapse of the predicted time becomes substantially constant in the Z-axis direction; and moves the flaw detecting sensor along the Z-axis direction. The positioning controller performs the same control in an X-axis direction.
摘要翻译：跟踪装置设置有非接触型位移计，定位器，其在垂直于管或管的轴向的平面内移动探伤传感器;以及定位控制器，其控制定位器。定位控制器预测一段时间，直到通过位移计测量位移的管或管的一部分在基于管或管的旋转中心在Z轴方向上延伸的直线上的预定位置上位移计与探伤传感器之间的位置关系以及管或管的旋转速度; 基于位移计测量的位移和定位器的操作延迟时间来控制定位器，使得在经过预测时间之后，探伤传感器与管道的相对位置变得基本恒定在Z轴方向; 并沿着Z轴方向移动探伤传感器。定位控制器在X轴方向执行相同的控制。

5. 发明授权

US08104349B2 Flaw detection tracking device for pipe or tube and automatic flaw detecting apparatus for pipe or tube using the same 有权
标题翻译：用于管道或管道的探伤跟踪装置以及使用其的管道或管道的自动探伤装置
公开(公告)号：US08104349B2
公开(公告)日：2012-01-31
申请号：US12312962
申请日：2007-10-26
申请人： Hiroshi Kubota , Yoshiyuki Nakao , Masami Ikeda , Nobuyuki Mori , Hiroshi Sato
发明人： Hiroshi Kubota , Yoshiyuki Nakao , Masami Ikeda , Nobuyuki Mori , Hiroshi Sato
IPC分类号： G01N29/04 , G01N27/82 , G01B5/28
CPC分类号： G01N29/225 , G01N29/043 , G01N29/069 , G01N29/265 , G01N2291/2634
摘要： A tracking device is provided with a non-contact type displacement gauge, a positioner which moves a flaw detecting sensor within a plane perpendicular to an axial direction of a pipe or tube, and a positioning controller which controls the positioner. The positioning controller predicts a time until a portion of the pipe or tube whose displacement is measured by the displacement gauge reaches a predetermined position on a straight line extending in a Z-axis direction through a rotational center of the pipe or tube on the basis of the positional relationship between the displacement gauge and the flaw detecting sensor and a rotational speed of the pipe or tube; controls the positioner on the basis of the displacement measured by the displacement gauge and an operational delay time of the positioner in such a manner that the relative position of the flaw detecting sensor to the pipe or tube after the lapse of the predicted time becomes substantially constant in the Z-axis direction; and moves the flaw detecting sensor along the Z-axis direction. The positioning controller performs the same control in an X-axis direction.
摘要翻译：跟踪装置设置有非接触型位移计，定位器，其在垂直于管或管的轴向的平面内移动探伤传感器;以及定位控制器，其控制定位器。定位控制器预测一段时间，直到通过位移计测量位移的管或管的一部分在基于管或管的旋转中心在Z轴方向上延伸的直线上的预定位置上位移计与探伤传感器之间的位置关系以及管或管的旋转速度; 基于位移计测量的位移和定位器的操作延迟时间来控制定位器，使得在经过预测时间之后，探伤传感器与管道的相对位置变得基本恒定在Z轴方向; 并沿着Z轴方向移动探伤传感器。定位控制器在X轴方向执行相同的控制。

6. 发明授权

US08552717B2 Eddy current testing method and eddy current testing apparatus 有权
标题翻译：涡流测试方法和涡流测试仪
公开(公告)号：US08552717B2
公开(公告)日：2013-10-08
申请号：US12531840
申请日：2008-03-17
申请人： Shigetoshi Hyodo , Yoshiyuki Nakao
发明人： Shigetoshi Hyodo , Yoshiyuki Nakao
IPC分类号： G01N27/82
CPC分类号： G01N27/9013
摘要： It is an object of the present invention to provide an eddy current testing apparatus capable of accurately detecting any flaws occurring in a columnar or cylindrical subject to be tested regardless of their extending directions, with the use of the same probe coil.The eddy current testing apparatus 100 according to the present invention comprises a spinning plate 1 and a probe coil 2 disposed on the spinning plate 1. The probe coil is a probe coil capable of obtaining a differential output about a scanning direction of a detection signal which corresponds to a detected eddy current induced in the subject to be tested. The spinning plate is disposed in such a position that a spinning center RC of the spinning plate faces with an axial center PC of the subject to be tested. A distance R between the spinning center of the spinning plate and a center of the probe coil is set so that a difference between a maximum amplitude of a differential output at an axially extending artificial flaw provided in the subject to be tested and a maximum amplitude of a differential output at a circumferentially extending artificial flaw provided in the subject to be tested falls within a predetermined range.
摘要翻译：本发明的目的是提供一种涡流测试装置，其能够使用相同的探针线圈来精确地检测在被测试的柱状或圆柱体中发生的任何缺陷，而不管其延伸方向如何。根据本发明的涡流检测装置100包括设置在纺丝板1上的纺丝板1和探针线圈2.探针线圈是能够获得关于检测信号的扫描方向的差分输出的探针线圈，对应于在待测试对象中感测的检测到的涡流。纺丝板被设置在纺纱板的纺纱中心RC与待测试对象的轴心中心PC相对的位置。将纺丝板的纺纱中心与探针线圈的中心之间的距离R设定为使被测试对象物中设置的轴向延伸的人造缺陷的差动输出的最大振幅与最大振幅在待测试对象中设置的周向延伸的人造缺陷的差分输出落在预定范围内。

7. 发明申请

US20110003475A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110003475A1
公开(公告)日：2011-01-06
申请号：US12883701
申请日：2010-09-16
申请人： Michie Sunayama , Yoshiyuki Nakao , Noriyoshi Shimizu
发明人： Michie Sunayama , Yoshiyuki Nakao , Noriyoshi Shimizu
IPC分类号： H01L21/768
CPC分类号： H01L23/53295 , H01L21/2855 , H01L21/76805 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , Y10S438/914 , H01L2924/00
摘要： A method for producing a semiconductor device including a first conductor disposed on a semiconductor substrate; an oxygen-containing insulation film disposed on the semiconductor substrate and on the first conductor, the insulation film having a contact hole which extends to the first conductor and a trench which is connected to an upper portion of the contact hole; a zirconium oxide film disposed on a side surface of the contact hole and a side surface and a bottom surface of the trench; a zirconium film disposed on the zirconium oxide film inside the contact hole and inside the trench; and a second conductor composed of Cu embedded into the contact hole and into the trench.
摘要翻译：一种半导体器件的制造方法，包括设置在半导体衬底上的第一导体; 设置在所述半导体衬底上和所述第一导体上的含氧绝缘膜，所述绝缘膜具有延伸到所述第一导体的接触孔和与所述接触孔的上部连接的沟槽; 设置在所述接触孔的侧表面上的氧化锆膜和所述沟槽的侧表面和底表面; 在所述接触孔内部和所述沟槽内部设置在所述氧化锆膜上的锆膜; 以及由嵌入接触孔并进入沟槽的Cu构成的第二导体。

8. 发明申请

US20100178762A1 MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE SUITABLE FOR FORMING WIRINGS BY DAMASCENE METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于通过DAMASCENE方法和半导体器件形成线的半导体器件的制造方法
公开(公告)号：US20100178762A1
公开(公告)日：2010-07-15
申请号：US12731515
申请日：2010-03-25
申请人： Hideki Kitada , Nobuyuki Ohtsuka , Noriyoshi Shimizu , Yoshiyuki Nakao
发明人： Hideki Kitada , Nobuyuki Ohtsuka , Noriyoshi Shimizu , Yoshiyuki Nakao
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/76831 , H01L21/76846 , H01L21/76855 , H01L21/76864 , H01L21/76867 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interlayer insulating film having a concave portion is formed on a semiconductor substrate. A tight adhesion film is formed on the inner surface of the concave portion and the upper surface of the insulating film. The surface of the adhesion layer is covered with an auxiliary film made of Cu alloy containing a first metal element. A conductive member containing a second metal element other than the first metal element is embedded in the concave portion, and deposited on the auxiliary film. Heat treatment is performed to make atoms of the first metal element in the auxiliary film segregate on the inner surface of the concave portion. The adhesion layer contains an element for enhancing tight adhesion of the auxiliary film more than if the auxiliary film is deposited directly on a surface of the interlayer insulating film. During the period until the barrier layer having also the function of enhancing tight adhesion, it becomes possible to retain sufficient tight adhesion of a wiring member and prevent peel-off of the wiring member.
摘要翻译：在半导体基板上形成具有凹部的层间绝缘膜。在凹部的内表面和绝缘膜的上表面上形成紧密粘合膜。粘附层的表面覆盖有由含有第一金属元素的Cu合金制成的辅助膜。包含除了第一金属元件之外的第二金属元件的导电构件被嵌入在凹部中，并且沉积在辅助膜上。进行热处理，使辅助膜中的第一金属元素的原子在凹部的内表面分离。如果辅助膜直接沉积在层间绝缘膜的表面上，则粘合层包含用于增强辅助膜的紧密粘附的元件。在阻隔层也具有增强紧密附着力的时段期间，可以保持布线部件的足够的紧密粘合性并防止布线部件的剥离。

9. 发明授权

US07256500B2 Semiconductor device using metal nitride as insulating film 有权
标题翻译：使用金属氮化物作为绝缘膜的半导体器件
公开(公告)号：US07256500B2
公开(公告)日：2007-08-14
申请号：US11362872
申请日：2006-02-28
申请人： Noriyuki Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
发明人： Noriyuki Shimizu , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki , Nobuyuki Nishikawa
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76832 , H01L21/318 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/76843 , H01L21/76849 , H01L21/76873 , H01L23/5226 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
摘要翻译：在半导体衬底上形成第一绝缘膜。在第一绝缘膜上形成由绝缘金属氮化物制成的第二绝缘膜。通过第二绝缘膜形成凹部，并且到达比第一绝缘膜的上表面更深的位置。导电部件被埋在凹部中。提供了一种半导体器件，即使其具有低介电常数，其层间绝缘膜也可以容易地加工。

10. 发明授权

US06992005B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06992005B2
公开(公告)日：2006-01-31
申请号：US10819231
申请日：2004-04-07
申请人： Nobuyuki Ohtsuka , Noriyoshi Shimizu , Hisaya Sakai , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki
发明人： Nobuyuki Ohtsuka , Noriyoshi Shimizu , Hisaya Sakai , Yoshiyuki Nakao , Hiroki Kondo , Takashi Suzuki
IPC分类号： H01L29/72
CPC分类号： H01L21/76849 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76855 , H01L21/76858 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a multi-layered wiring structure containing a copper layer, comprises a first insulating film formed over a semiconductor substrate, a first copper pattern buried in the first insulating film, a cap layer formed on the first copper pattern and the first insulating film and made of a substance a portion of which formed on the first copper pattern has a smaller electrical resistance value than a portion formed on the first insulating film, second insulating films formed on the cap layer, and a second copper pattern buried in a hole or a trench, which is formed in the second insulating films on the first copper pattern; and connected electrically to the first copper pattern via the cap layer.
摘要翻译：一种具有包含铜层的多层布线结构的半导体器件，包括形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的第一铜图案，形成在第一铜图案上的帽层和第一绝缘层由形成在第一铜图案上的部分的物质制成的薄膜比形成在第一绝缘膜上的部分的电阻值小，形成在盖层上的第二绝缘膜和埋在孔中的第二铜图案或形成在第一铜图案上的第二绝缘膜中的沟槽; 并且经由盖层与第一铜图案电连接。

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