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1. 发明授权

US06778308B2 Process of fabricating semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的工艺
公开(公告)号：US06778308B2
公开(公告)日：2004-08-17
申请号：US10652044
申请日：2003-09-02
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
IPC分类号： G02F1015
CPC分类号： B82Y20/00 , G02F1/015 , G02F1/017 , G02F2202/32 , G02F2203/02 , G02F2203/10
摘要： A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.
摘要翻译：一种垂直光学调制器，包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极，其形成在电介质层内以形成整体的网状形状，以在网状形状的交点处彼此分离并且接触同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。

2. 发明授权

US06917457B2 Process of fabricating semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的工艺
公开(公告)号：US06917457B2
公开(公告)日：2005-07-12
申请号：US10889027
申请日：2004-07-13
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Masahiro Kitoh , Toshiya Yokogawa
IPC分类号： G02F1/015 , G02F1/017
CPC分类号： B82Y20/00 , G02F1/015 , G02F1/017 , G02F2202/32 , G02F2203/02 , G02F2203/10
摘要： A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.
摘要翻译：一种垂直光学调制器，包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极，其形成在电介质层内以形成网状整体，在网状形状的交点处彼此分离并且接触同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。

3. 发明授权

US07009216B2 Semiconductor light emitting device and method of fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07009216B2
公开(公告)日：2006-03-07
申请号：US10718581
申请日：2003-11-24
申请人： Nobuyuki Otsuka , Shigeo Yoshii , Toshiya Yokogawa
发明人： Nobuyuki Otsuka , Shigeo Yoshii , Toshiya Yokogawa
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01S5/187 , H01S5/028 , H01S5/105 , H01S5/124 , H01S5/2201 , H01S5/42
摘要： A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).
摘要翻译：本发明的半导体发光器件包括n型InP衬底（1）和在n型InP衬底（1）上形成为条形的条形结构（10），并且由n型InP衬底下包层（3），在与n型InP衬底（1）平行的方向上具有谐振器的有源层（4）和p型InP上覆层（5）。条状结构（10）具有光子晶体结构（2），其具有矩形格子状的凹部9，并且配置有光子晶体结构（2）的凹部（9）的方向与谐振器方向。条状上电极（6）形成在条状结构（10）上以沿谐振器方向延伸。如此构造的本发明的半导体发光器件被配置为沿垂直于n型InP衬底（1）的方向辐射光。

4. 发明授权

US06953954B2 Plasma oscillation switching device 失效
标题翻译：等离子体振荡开关装置
公开(公告)号：US06953954B2
公开(公告)日：2005-10-11
申请号：US10745567
申请日：2003-12-29
申请人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki , Toshiya Yokogawa
发明人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki , Toshiya Yokogawa
IPC分类号： H01L29/812 , H01L21/338 , H01L29/20 , H01L29/778 , H01L29/80 , H01L29/43
CPC分类号： H01L29/1029 , H01L29/2003 , H01L29/7785
摘要： A plasma oscillation switching device of the present invention comprises semiconductor substrate 101; first barrier layer 103 that is composed of a III-V compound semiconductor and formed on the substrate; channel layer 104 that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer 105 that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode 107, gate electrode 109 and drain electrode 108 provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer 103a, the second barrier layer includes p-type diffusion layer 105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer 106.
摘要翻译：本发明的等离子体振荡切换装置包括半导体基板101，第一阻挡层103，其由III-V族化合物半导体构成并形成在基板上; 沟道层104，其由III-V族化合物半导体形成并形成在第一阻挡层上; 第二阻挡层105，其由III-V族化合物半导体形成并形成在沟道层上; 源极电极107，栅电极109和漏电极108，其中第一阻挡层包括n型扩散层103a，第二阻挡层包括p型扩散层105a，第二势垒层包括p型扩散层105a，通道层比第一和第二阻挡层的带隙小，二维电子气体EG在第一阻挡层和沟道层之间的边界处的导带处累积，二维空穴气体HG被积聚在第二阻挡层和沟道层之间的边界处的价带处，并且这些电极通过绝缘层106形成在阻挡层上。

5. 发明授权

US5956362A Semiconductor light emitting device and method of etching 失效
标题翻译：半导体发光器件及其蚀刻方法
公开(公告)号：US5956362A
公开(公告)日：1999-09-21
申请号：US806929
申请日：1997-02-26
申请人： Toshiya Yokogawa , Shigeo Yoshii
发明人： Toshiya Yokogawa , Shigeo Yoshii
IPC分类号： H01S5/026 , H01S5/183 , H01S5/347 , H01S5/42 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/18341 , H01S5/0207 , H01S5/0264 , H01S5/18305 , H01S5/18308 , H01S5/18369 , H01S5/347 , H01S5/423
摘要： A vertical cavity type semiconductor light emitting device includes: a light emitting layer made of a II-IV group compound semiconductor material; a first II-VI group compound semiconductor layer which has an opening at a position corresponding to the inside of the light emitting layer; and an upper mirror and a lower mirror which are provided so as to interpose the light emitting layer therebetween. A current is injected through the opening into the light emitting layer.
摘要翻译：一种垂直腔型半导体发光器件包括：由II-IV族化合物半导体材料制成的发光层; 第一II-VI族化合物半导体层，其在对应于发光层内部的位置处具有开口; 以及设置成将发光层插入其间的上镜和下镜。电流通过开口注入发光层。

6. 发明授权

US06903383B2 Semiconductor device having a high breakdown voltage for use in communication systems 失效
标题翻译：具有用于通信系统的高击穿电压的半导体器件
公开(公告)号：US06903383B2
公开(公告)日：2005-06-07
申请号：US10343097
申请日：2001-11-21
申请人： Toshiya Yokogawa , Asamira Suzuki , Masahiro Deguchi , Shigeo Yoshii , Hiroyuki Furuya
发明人： Toshiya Yokogawa , Asamira Suzuki , Masahiro Deguchi , Shigeo Yoshii , Hiroyuki Furuya
IPC分类号： H01L21/8252 , H01L27/06 , H01L29/20 , H01L29/778 , H03F3/60 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L27/0605 , H01L21/8252 , H01L29/2003 , H01L29/7785 , H03F3/601 , H03F2200/294
摘要： A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple δ-doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple δ-doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple δ-doped InAlAs layer (204) as a carrier supplying layer is reduced.
摘要翻译： HEMT具有InAlAs层（202），InGaAs层（203），由交替层叠的n型掺杂层（204a）和未掺杂层（204b）构成的多重δ掺杂InAlAs层（204） InP层（205），肖特基栅电极（210），源极电极（209a）和漏极电极（209b）。当电流在与InGaAs层（203）和多重δ掺杂的InAlAs层（204）之间的界面相邻的InGaAs层（203）的区域（沟道区）中流动时，可以增加关断状态下的击穿电压，同时抵抗通过作为载流子供给层的多个δ-掺杂InAlAs层（204）的载流子的移动。

7. 发明授权

US5822347A Semiconductor light emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5822347A
公开(公告)日：1998-10-13
申请号：US589488
申请日：1996-01-22
申请人： Toshiya Yokogawa , Shigeo Yoshii , Yoichi Sasai
发明人： Toshiya Yokogawa , Shigeo Yoshii , Yoichi Sasai
IPC分类号： H01L33/00 , H01L33/10 , H01L33/28 , H01L33/46 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/327 , H01S5/347 , H01S3/19 , H01L29/22
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/465 , H01S5/18341 , H01S5/327 , H01S5/347 , H01L33/105 , H01S2301/166 , H01S5/0207 , H01S5/02461 , H01S5/18308 , H01S5/18369 , H01S5/2063 , H01S5/2081 , H01S5/2211 , H01S5/2214 , H01S5/2231
摘要： In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO.sub.2 layer and a polycrystalline TiO.sub.2 layer, for obtaining laser oscillation are provided on the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided. Alternatively, on an n type GaAs substrate, an n type ZnSe epitaxial layer, an n type ZnMgSSe cladding layer, an n type ZnSSe optical waveguide layer, a ZnCdSe active layer, a p type ZnSSe optical waveguide layer, a p type ZnMgSSe cladding layer, a p type ZnTe contact layer and a polycrystalline ZnO burying layer are respectively formed. Furthermore, a p type AuPd electrode and an n type In electrode are respectively provided.
摘要翻译：在II-VI族半导体激光器中，在n型GaAs衬底上依次沉积n型ZnSe层，ZnCdSe阱层的多量子阱层和ZnSe阻挡层以及p型ZnSe层。在p型ZnSe层的两侧设置多晶ZnO层，用于收缩电流。在p型ZnSe层以及通过蚀刻GaAs衬底暴露的n型ZnSe层的表面上，设置分别由用于获得激光振荡的多晶SiO 2层和多晶TiO 2层构成的多片反射镜。此外，分别设置p型AuPd电极和n型AuGeNi电极。或者，在n型GaAs衬底上，n型ZnSe外延层，n型ZnMgSSe覆层，n型ZnSSe光波导层，ZnCdSe有源层，ap型ZnSSe光波导层，ap型ZnMgSSe覆层，ap 分别形成ZnTe接触层和多晶ZnO掩埋层。此外，分别设置p型AuPd电极和n型In电极。

8. 发明授权

US08933543B2 Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag 有权
标题翻译：具有m面成角度半导体区域的氮化物半导体元件和包含Mg和Ag的电极
公开(公告)号：US08933543B2
公开(公告)日：2015-01-13
申请号：US13503972
申请日：2011-03-15
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Akihiro Isozaki
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L33/16 , H01L21/02 , H01L33/40 , H01L23/532 , H01L33/00 , H01L33/32 , H01S5/042 , H01S5/32 , H01S5/323
CPC分类号： H01L21/02579 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L23/53247 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2224/13 , H01L2924/12032 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341 , H01L2924/00
摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面倾斜不小于1°的角度，超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。

9. 发明授权

US08729587B2 Nitride semiconductor element and manufacturing method therefor 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US08729587B2
公开(公告)日：2014-05-20
申请号：US13596849
申请日：2012-08-28
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
IPC分类号： H01L33/30 , H01L33/50
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/045 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/32341
摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。

10. 发明授权

US08334199B2 Method for fabricating nitride-based semiconductor device having electrode on m-plane 有权
标题翻译：一种在m面上具有电极的氮化物基半导体器件的制造方法
公开(公告)号：US08334199B2
公开(公告)日：2012-12-18
申请号：US12937758
申请日：2010-03-17
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L21/3205
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触半导体多层结构20。

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