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    • 1. 发明授权
    • Vortex flow meter
    • 涡街流量计
    • US07409872B2
    • 2008-08-12
    • US11647041
    • 2006-12-28
    • Nobuyuki IshikawaYuichi Saito
    • Nobuyuki IshikawaYuichi Saito
    • G01F1/32
    • G01F1/3209G01F1/3245G01F15/006
    • It is an object to provide a vortex flow meter with less measurement errors caused by a temperature change, a pressure change, and a mechanical vibration, and capable of performing a precise measurement regardless of conditions, in addition, to provide a vortex flow meter capable of sufficiently preventing corrosive chemicals that is a fluid to be measured from leaking from a measurement pipe line due to corrosion.A vortex generator that generates the Karman vortex and a measurement pipe line in which a holder body housing a detecting element that detects an alternating force of the Karman vortex is disposed are made of a material having a small coefficient of linear thermal expansion such as a quartz glass, and the vortex generator and the holder body are fixed to the measurement pipe line by welding in an integrating manner.
    • 本发明的目的是提供一种涡流流量计,其具有由温度变化,压力变化和机械振动引起的较小的测量误差,并且能够执行精确的测量,而不管条件如何,另外还提供了一种能够提供的涡流流量计 足以防止作为测量流体的腐蚀性化学品由于腐蚀而从测量管线泄漏。 产生卡曼涡流的涡流发生器和设置有检测卡曼涡流的交替力的检测元件的保持体的测量管线由具有小的线性热膨胀系数的材料制成,例如石英 玻璃,并且涡流发生器和保持器主体通过以积分的方式进行焊接而固定到测量管线。
    • 2. 发明申请
    • VORTEX FLOW METER
    • VORTEX流量计
    • US20080156105A1
    • 2008-07-03
    • US11647041
    • 2006-12-28
    • Nobuyuki IshikawaYuichi Saito
    • Nobuyuki IshikawaYuichi Saito
    • G01F1/32
    • G01F1/3209G01F1/3245G01F15/006
    • It is an object to provide a vortex flow meter with less measurement errors caused by a temperature change, a pressure change, and a mechanical vibration, and capable of performing a precise measurement regardless of conditions, in addition, to provide a vortex flow meter capable of sufficiently preventing corrosive chemicals that is a fluid to be measured from leaking from a measurement pipe line due to corrosion.A vortex generator that generates the Karman vortex and a measurement pipe line in which a holder body housing a detecting element that detects an alternating force of the Karman vortex is disposed are made of a material having a small coefficient of linear thermal expansion such as a quartz glass, and the vortex generator and the holder body are fixed to the measurement pipe line by welding in an integrating manner.
    • 本发明的目的是提供一种涡流流量计,其具有由温度变化,压力变化和机械振动引起的较小的测量误差,并且能够执行精确的测量,而不管条件如何,另外还提供了一种能够提供的涡流流量计 足以防止作为测量流体的腐蚀性化学品由于腐蚀而从测量管线泄漏。 产生卡曼涡流的涡流发生器和设置有检测卡曼涡流的交替力的检测元件的保持体的测量管线由具有小的线性热膨胀系数的材料制成,例如石英 玻璃,并且涡流发生器和保持器主体通过以积分的方式进行焊接而固定到测量管线。
    • 8. 发明申请
    • SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    • 半导体元件及其制造方法
    • US20110101354A1
    • 2011-05-05
    • US12864461
    • 2009-01-08
    • Yuichi SaitoMasao MoriguchiAkihiro Kohno
    • Yuichi SaitoMasao MoriguchiAkihiro Kohno
    • H01L33/16H01L21/336
    • H01L29/78669H01L29/66765H01L29/78609H01L29/78618H01L29/78678
    • A semiconductor device 101 includes: a substrate 1; an active layer 4 provided on the substrate 1, the active layer 4 including a channel region 4c and a first region 4a and a second region 4b that are respectively located on opposite sides of the channel region 4c; a first contact layer 6a and a second contact layer 6b which are respectively in contact with the first region 4a and the second region 4b of the active layer 4; a first electrode 7 electrically coupled to the first region 4a via the first contact layer 6a; a second electrode 8 electrically coupled to the second region 4b via the second contact layer 6b; and a gate electrode 2 which is provided such that a gate insulating layer 3 is interposed between the gate electrode 2 and the active layer 4, the gate electrode 2 being configured to control a conductivity of the channel region 4c. The active layer 4 contains silicon. The semiconductor device further includes an oxygen-containing silicon layer 5 between the active layer 4 and the first and second contact layers 6a, 6b. The oxygen-containing silicon layer 5 contains oxygen at a concentration higher than the active layer 4 and the first and second contact layers 6a, 6b.
    • 半导体器件101包括:衬底1; 设置在基板1上的有源层4,有源层4包括分别位于沟道区域4c的相对侧上的沟道区域4c和第一区域4a和第二区域4b; 分别与有源层4的第一区域4a和第二区域4b接触的第一接触层6a和第二接触层6b; 经由第一接触层6a电耦合到第一区域4a的第一电极7; 经由第二接触层6b电耦合到第二区域4b的第二电极8; 栅极电极2被设置为使得栅极绝缘层3插入在栅极电极2和有源层4之间,栅电极2被配置为控制沟道区域4c的导电性。 有源层4含有硅。 半导体器件还包括有源层4和第一和第二接触层6a,6b之间的含氧硅层5。 含氧硅层5含有浓度高于有源层4和第一和第二接触层6a,6b的氧。