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1. 发明申请

US20120319071A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：US20120319071A1
公开(公告)日：2012-12-20
申请号：US13495650
申请日：2012-06-13
申请人： Nobuyoshi AWAYA , Takahiro SHIBUYA , Takashi NAKANO , Yoshiaki TABUCHI , Yushi INOUE , Yukio TAMAI
发明人： Nobuyoshi AWAYA , Takahiro SHIBUYA , Takashi NAKANO , Yoshiaki TABUCHI , Yushi INOUE , Yukio TAMAI
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/146 , H01L45/1616
摘要： The present invention provides a variable resistive element that can perform a stable switching operation at low voltage and low current, and also provides a low-power consumption large-capacity non-volatile semiconductor memory device including the variable resistive element. The non-volatile semiconductor memory device is a device using a variable resistive element, which includes a variable resistor between a first electrode and a second electrode, for storing information, wherein an oxygen concentration of a hafnium oxide (HfOx) film or a zirconium oxide (ZrOx) film constituting the variable resistor is optimized such that a stoichiometric composition ratio x of oxygen to Hf or Zr falls within a range of 1.7≦x≦1.97.
摘要翻译：本发明提供了一种可在低电压和低电流下进行稳定的开关操作的可变电阻元件，并且还提供包括可变电阻元件的低功耗大容量非易失性半导体存储器件。非易失性半导体存储器件是使用可变电阻元件的器件，其包括用于存储信息的第一电极和第二电极之间的可变电阻器，其中氧化铪（HfO x）膜或氧化锆优选构成可变电阻器的（ZrO x）膜，使得氧与Hf或Zr的化学计量组成比x落在1.7

2. 发明申请

US20120081946A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20120081946A1
公开(公告)日：2012-04-05
申请号：US13233301
申请日：2011-09-15
申请人： Suguru KAWABATA , Shinobu YAMAZAKI , Kazuya ISHIHARA , Junya ONISHI , Nobuyoshi AWAYA , Yukio TAMAI
发明人： Suguru KAWABATA , Shinobu YAMAZAKI , Kazuya ISHIHARA , Junya ONISHI , Nobuyoshi AWAYA , Yukio TAMAI
IPC分类号： G11C11/00
CPC分类号： G11C11/5685 , G11C13/0007 , G11C2013/0071 , G11C2013/0073 , G11C2013/0083 , G11C2213/79
摘要： A nonvolatile semiconductor memory device includes a memory cell array for storing user data provided by arranging memory cells each having a variable resistive element having a first electrode, a second electrode, and a variable resistor made of a metal oxide sandwiched between the first and second electrodes. The first and second electrodes are formed of a conductive material forming ohmic junction with the variable resistor and a conductive material forming non-ohmic junction with the variable resistor, respectively. The variable resistor changes between two or more different resistance states by applying a voltage between the electrodes. The resistance state after being changed is maintained in a nonvolatile manner. The variable resistive elements of all memory cells in the memory cell array are set to the highest of the two or more different resistance states in an unused state before the memory cell array is used to store the user data.
摘要翻译：非易失性半导体存储器件包括存储单元阵列，用于存储通过布置存储单元而提供的用户数据，每个存储单元具有可变电阻元件，该可变电阻元件具有第一电极，第二电极和夹在第一和第二电极之间的金属氧化物制成的可变电阻器。第一和第二电极由与可变电阻器形成欧姆结的导电材料和分别与可变电阻器形成非欧姆结的导电材料形成。可变电阻器通过在电极之间施加电压而在两个或多个不同的电阻状态之间变化。改变后的电阻状态保持非挥发性。在存储单元阵列用于存储用户数据之前，将存储单元阵列中的所有存储单元的可变电阻元件设置为处于未使用状态的两个或多个不同电阻状态中的最高值。

3. 发明申请

US20110317472A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US20110317472A1
公开(公告)日：2011-12-29
申请号：US13165941
申请日：2011-06-22
申请人： Nobuyoshi AWAYA , Yukio TAMAI , Akihito SAWA
发明人： Nobuyoshi AWAYA , Yukio TAMAI , Akihito SAWA
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L27/249 , G11C11/161 , G11C11/1659 , G11C13/0069 , G11C13/0097 , G11C2213/51 , G11C2213/71 , G11C2213/72 , G11C2213/73 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/147 , H01L45/1641 , H01L45/1675
摘要： A memory cell array having a 1R structure is composed of nonvolatile variable resistive elements each including a variable resistor formed of a metal oxide film whose resistance changes depending on an oxygen concentration in the film, and first and second electrodes sandwiching the variable resistor. The first electrode and the variable resistor form a rectifier junction through a rectifier junction layer composed of an oxide layer and a layer (oxygen depletion layer) of the metal oxide film having an oxygen concentration lower than a stoichiometric composition. The oxygen moves between the first electrode and the metal oxide film when a voltage is applied, and a thickness of the oxygen depletion layer changes, so that the resistance of the metal oxide film changes and the rectifying properties are provided. A thickness of the oxygen depletion layer is set to allow the variable resistive element to show the sufficient rectifying properties.
摘要翻译：具有1R结构的存储单元阵列由非易失性可变电阻元件组成，每个非易失性可变电阻元件包括由电阻根据膜中的氧浓度而变化的金属氧化物膜形成的可变电阻器，以及夹持可变电阻器的第一和第二电极。第一电极和可变电阻器通过由氧化物层和氧（氧）浓度低于化学计量组成的金属氧化物膜的层（氧耗尽层）组成的整流器结层形成整流器结。当施加电压时，氧在第一电极和金属氧化物膜之间移动，并且氧耗尽层的厚度改变，使得金属氧化物膜的电阻改变并且提供整流性能。氧耗尽层的厚度被设定为允许可变电阻元件显示足够的矫正特性。

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