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1. 发明申请

US20120160273A1 Liquid Processing Method, Liquid Processing Apparatus and Recording Medium 有权
标题翻译：液体处理方法，液体处理装置和记录介质
公开(公告)号：US20120160273A1
公开(公告)日：2012-06-28
申请号：US13328058
申请日：2011-12-16
申请人： Nobutaka MIZUTANI , Tsutae OMORI , Takehiko ORII , Akira FUJITA
发明人： Nobutaka MIZUTANI , Tsutae OMORI , Takehiko ORII , Akira FUJITA
IPC分类号： B08B3/00
CPC分类号： H01L21/02057 , H01L21/67028 , H01L21/67051
摘要： Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions are water-repellentized by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.
摘要翻译：公开了一种液体处理方法，液体处理装置和记录介质，其可以防止目标基板的凸部在冲洗液体干燥时塌陷。目标基板的基面被亲水化，并且凸部的表面通过对包括主体的主体，从主体突出的多个凸部进行表面处理而防水，以及形成在主体基板主体上的凸部。接下来，向经过表面处理的目标基板供给冲洗液。此后，从目标基板除去冲洗液。

2. 发明申请

US20120247516A1 SUPERCRITICAL DRYING METHOD AND APPARATUS FOR SEMICONDUCTOR SUBSTRATES 有权
标题翻译：超临界干燥方法和半导体基板的设备
公开(公告)号：US20120247516A1
公开(公告)日：2012-10-04
申请号：US13369970
申请日：2012-02-09
申请人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
发明人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
IPC分类号： B08B3/00 , F26B25/14 , F26B25/06
CPC分类号： F26B3/02
摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
摘要翻译：根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。房间包含SUS。对室的内壁面进行电解抛光。

3. 发明申请

US20100108095A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE CLEANING METHOD 审中-公开
标题翻译：基板加工设备和基板清洗方法
公开(公告)号：US20100108095A1
公开(公告)日：2010-05-06
申请号：US12611143
申请日：2009-11-03
申请人： Nobuhiko MOURI , Seiki ISHIDA , Kenji SEKIGUCHI , Takehiko ORII
发明人： Nobuhiko MOURI , Seiki ISHIDA , Kenji SEKIGUCHI , Takehiko ORII
IPC分类号： B08B3/00
CPC分类号： H01L21/67051
摘要： Disclosed are a substrate processing apparatus and a substrate cleaning method to satisfactorily clean the entire circumferential periphery of a substrate, including an upper surface circumferential periphery, an end, and a lower surface circumferential periphery of the substrate. The substrate processing apparatus includes a substrate supporter to support the substrate, a first cleaner to clean the upper surface circumferential periphery of the substrate with a pressurized cleaning liquid, and a second cleaner to clean the end and the lower surface circumferential periphery of the substrate while contacting the end and the lower surface circumferential periphery of the substrate with a cleaning member. The first cleaner cleans the upper surface circumferential periphery of the substrate, and the second cleaner cleans the end and the lower surface circumferential periphery of the substrate.
摘要翻译：公开了一种基板处理装置和基板清洗方法，以令人满意地清洁基板的整个周缘，包括基板的上表面周向周向，端部和下表面周向周边。基板处理装置包括用于支撑基板的基板支撑件，用加压清洗液清洁基板的上表面圆周的第一清洁器和用于清洁基板的端部和下表面周向周边的第二清洁器，同时使基板的端面和下表面周边与清洁件接触。第一清洁剂清洁基板的上表面周向周边，并且第二清洁器清洁基板的端部和下表面周向周边。

4. 发明申请

US20110155193A1 SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND COMPUTER READABLE RECORDING MEDIUM 有权
标题翻译：基板清洁方法，基板清洁装置和计算机可读记录介质
公开(公告)号：US20110155193A1
公开(公告)日：2011-06-30
申请号：US13042844
申请日：2011-03-08
申请人： Hiromitsu NANBA , Takashi YABUTA , Takehiko ORII
发明人： Hiromitsu NANBA , Takashi YABUTA , Takehiko ORII
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , G02F2001/1316 , G11B23/505 , H01L21/67034
摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.
摘要翻译：在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜。

5. 发明申请

US20090205684A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM 有权
标题翻译：基板处理装置，基板处理方法和存储介质
公开(公告)号：US20090205684A1
公开(公告)日：2009-08-20
申请号：US12372265
申请日：2009-02-17
申请人： Takehiko ORII , Kenji SEKIGUCHI
发明人： Takehiko ORII , Kenji SEKIGUCHI
IPC分类号： B08B3/04
CPC分类号： H01L21/02052 , H01L21/67028 , H01L21/67034
摘要： A substrate processing apparatus capable of reducing a supply amount of low humidity is disclosed. The substrate processing apparatus includes a chamber, a spin chuck, a gas discharging head, a driving device, a processing liquid supply nozzle, an IPA supply 7, which is installed at an upper side of the spin chuck 2 within the chamber 1 in such a manner that the gas discharging head can move up and down, and can discharge either low humidity gas or clean air to the lower side; a driving device 67 for moving the gas discharging head 7 at least distance between a retreat position of an upper part of the chamber and an approach position near the substrate held by a substrate holding part; a processing liquid supply nozzle 15 for supplying processing liquid to the wafer W held by the spin chuck 2; an IPA supply nozzle 35 for supplying IPA to the wafer W held by the spin chuck 2. Also, at least when IPA is supplied, the gas discharging head 7 is positioned at the approach position so that low humidity gas is supplied from the gas discharging head to the substrate.
摘要翻译：公开了能够减少低湿度供给量的基板处理装置。基板处理装置包括：腔室，旋转卡盘，排气头，驱动装置，处理液供给喷嘴，IPA电源7，其以这种方式安装在腔室1内的旋转卡盘2的上侧排气头可以上下移动的方式，并且可以将低湿气体或清洁空气排放到下侧; 驱动装置67，用于使气体排出头7在腔室的上部的退避位置和由衬底保持部保持的衬底附近的接近位置之间移动至少距离; 用于向由旋转卡盘2保持的晶片W供给处理液的处理液供给喷嘴15; 用于向由旋转卡盘2保持的晶片W提供IPA的IPA供给喷嘴35.另外，至少在提供IPA时，排气头7位于接近位置，从而从排气口供给低湿度气体前往基板。

6. 发明申请

US20080006299A1 Liquid processing apparatus and liquid processing method 失效
标题翻译：液体处理装置和液体处理方法
公开(公告)号：US20080006299A1
公开(公告)日：2008-01-10
申请号：US11892429
申请日：2007-08-22
申请人： Takehiko ORII , Masahiro MUKOYAMA , Hiromitsu NANBA
发明人： Takehiko ORII , Masahiro MUKOYAMA , Hiromitsu NANBA
IPC分类号： B08B5/04 , C23G1/36
CPC分类号： H01L21/67051
摘要： A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.
摘要翻译：一种清洁处理装置，包括用于保持晶片W的旋转卡盘，设置在与晶片W的背面对置的底板，其间设有规定的间隙，支撑底板的支撑部件和形成为延伸穿过板构件和支撑构件。可以通过开闭阀将化学液体，纯水和气体供给到喷嘴孔中，并且可以通过吸引装置吸引残留在喷嘴孔内的化学液体和纯水。在用纯水处理晶片W之后，通过使用吸附装置吸引残留在喷嘴孔内的纯水，然后将气体喷射到晶片W的背面。

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