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    • 2. 发明授权
    • Vibration-sensing element and vibration-sensing gyro using the same
    • 振动传感元件和振动感应陀螺仪使用相同
    • US5533397A
    • 1996-07-09
    • US329385
    • 1994-10-26
    • Nobuyoshi SugitaniMasayuki OkuwaTakeshi MorikawaYutaka Nonomura
    • Nobuyoshi SugitaniMasayuki OkuwaTakeshi MorikawaYutaka Nonomura
    • G01C19/56G01C19/5607H03H9/02H03H9/24G01P9/04
    • G01C19/5607
    • The invention provides a vibration-sensing gyro, where resonance frequencies of tines are adjusted adequately in a simple manner. A vibration-sensing gyro (10) of the invention is made of a light alloy plate like duralumin and includes a first tine (14) and a second tine (16) disposed parallel to each other and projecting from a base (12). When the first tine (14) has a length l1, a width w1 along the X axis, and a thickness t1 and the second tine (16) has a length l2, a width w2 along the X axis, and a thickness t2 (=t1), the first tine (14) and the second tine (16) hold the relationship of l2/.sqroot.t2=l1/.sqroot.w1. In other words, the tines (14,16) and the base (12) are manufactured to satisfy this relationship. Such definition of the dimensions makes a resonance frequency fx1 of the first tine along the X axis coincide with a resonance frequency fy 2 of the second tine 16 along the Y axis.
    • 本发明提供了一种振动感测陀螺仪,其中以简单的方式适当地调节尖齿的共振频率。 本发明的振动感应陀螺仪(10)由轻质合金板如硬铝制成,并包括彼此平行并从底座(12)伸出的第一齿(14)和第二齿(16)。 当第一齿(14)具有长度l1时,沿X轴的宽度w1和厚度t1和第二齿16具有长度l2,沿X轴的宽度w2和厚度t2(= t1),第一齿(14)和第二齿(16)保持l2 / 2ROOT t2 = l1 / 2ROOT w1的关系。 换句话说,制造齿(14,16)和基座(12)以满足这种关系。 尺寸的这种定义使得沿着X轴的第一齿的共振频率fx1与第二齿16沿Y轴的共振频率fy 2一致。
    • 3. 发明授权
    • Vibration-sensing device method of adjusting the same and angular
velocity sensor taking advantage of the same
    • 振动感应装置的调整方法和角速度传感器的优点相同
    • US5635642A
    • 1997-06-03
    • US518840
    • 1995-08-24
    • Yutaka NonomuraTakeshi MorikawaMasayuki OkuwaKouji Tsukada
    • Yutaka NonomuraTakeshi MorikawaMasayuki OkuwaKouji Tsukada
    • G01C19/56G01C19/5628G01P3/44
    • G01C19/5607
    • A vibration-sensing device (10) with high sensitivity includes a torsion bar (16) fixed on both ends thereof to a frame, a tuning fork-shaped vibrating member (12) joined with and supported by the torsion bar (16), and first and second torsion vibrating bodies (14,15) symmetrically projected from the torsion bar (16). The torsion bar (16), the tuning fork-shaped vibrating member (12), and the torsion vibrating bodies (14,15) constitute a torsion vibrating system. The application of an angular velocity to the vibration-sensing device (10) under the condition of plane vibrations of first and second vibrating tines (12a, 12b) of the first tuning fork-shaped vibrating member (12) along an X axis generates Coriolis forces to drive torsion vibration of the first tuning fork-shaped vibrating member (12) round the torsion bar (16), thereby driving torsion vibration corresponding to the angular velocity in the torsion vibrating system. The torsion vibration is amplified by the first and second torsion vibrating bodies (14,15) and detected by torsion vibration-detecting piezoelectric elements (20a,20b) attached to the torsion vibrating bodies (14,15). An angular velocity sensor using the vibration-sensing device, and a method of adjusting the sensitivity of the device are also provided.
    • 具有高灵敏度的振动检测装置(10)包括固定在其框架上的扭杆(16),与扭杆(16)接合并由扭杆(16)支撑的音叉形振动件(12),以及 从扭杆(16)对称地突出的第一和第二扭转振动体(14,15)。 扭杆(16),音叉形振动部件(12)和扭转振动体(14,15)构成扭转振动系统。 在第一音叉形振动件(12)的X轴的第一和第二振动尖(12a,12b)的平面振动的条件下,沿着X轴向角度速度施加角速度产生科里奥利 驱动第一音叉形振动件(12)在扭力杆(16)周围的扭转振动的力,由此驱动与扭转振动系统中的角速度相对应的扭转振动。 扭转振动由第一和第二扭转振动体(14,15)放大,并通过安装在扭转振动体(14,15)上的扭转振动检测压电元件(20a,20b)检测。 还提供了使用振动感测装置的角速度传感器和调节装置的灵敏度的方法。
    • 6. 发明授权
    • Force transducer
    • 力传感器
    • US5341688A
    • 1994-08-30
    • US995826
    • 1992-12-23
    • Takeshi MorikawaKouji TsukadaYutaka NonomuraYoshiteru Omura
    • Takeshi MorikawaKouji TsukadaYutaka NonomuraYoshiteru Omura
    • G01L1/18H01L29/84G01L1/16
    • G01L1/18
    • A force transducer comprises: an N-type silicon single crystal having a crystal face of (110) on which a force is applied; a pair of first electrodes and a pair of second electrodes mounted on the crystal face of (110) of the N-type silicon single crystal, the first electrodes facing in a direction angularly spaced by 135 degrees from a direction of of the crystal, and the second electrodes being angularly spaced by 90 degrees from the first electrodes, one of the pairs of first and second electrodes being adapted to serve as input electrodes and the other being adapted to serve as output electrodes; a force transmission block connected to the crystal face of (110) of the N-type silicon single crystal for transmitting the force perpendicularly to the crystal face; and a support bed supporting the N-type silicon single crystal and connected to the N-type silicon single crystal at a face opposite to the crystal face to which the force transmission block is connected, the support bed being in the form of a planar structure having a horizontal cross-sectional shape with a short axis and a long axis.
    • 力传感器包括:具有施加力的晶体面(110)的N型硅单晶; 一对第一电极和一对第二电极,其安装在所述N型硅单晶的(110)的晶面上,所述第一电极面向与所述N型单晶的(001)的方向成角度地间隔135度的方向 并且所述第二电极与所述第一电极成角度地间隔90度,所述一对第一和第二电极中的一个适于用作输入电极,另一个适于用作输出电极; 连接到所述N型硅单晶的(110)的晶面的力传递块,用于垂直于所述晶面传递所述力; 以及支撑N型硅单晶并且在与所述力传递块连接的晶面相对的面上与所述N型硅单晶相连的支撑床,所述支撑床为平面结构 具有短轴和长轴的水平横截面形状。
    • 7. 发明授权
    • Multilayered magnetic sensor having conductive layer within megnetic
layer
    • 多层磁传感器在磁性层内具有导电层
    • US5838154A
    • 1998-11-17
    • US615954
    • 1996-03-14
    • Takeshi MorikawaYuji NishibeHideya YamaderaYutaka NonomuraMasaharu TakeuchiJiro Sakata
    • Takeshi MorikawaYuji NishibeHideya YamaderaYutaka NonomuraMasaharu TakeuchiJiro Sakata
    • G01D5/20G01R33/02H01L43/00
    • G01R33/02
    • A magnetic sensor element 1 includes a substrate 10, a conductive layer 12 of a conductive material, and a magnetic layer 11 of a magnetic material, which encloses the conductive layer 12. AC is applied to the element from a drive power source 50, and a detector 60 detects an impedance change due to an external magnetic field. The magnetic layer 11 is bestowed with magnetic anisotropy in a direction orthogonal to the direction of energization of the element 1. With the provision of the conductive layer 12 of conductive material and also with magnetic anisotropy imparted to the magnetic layer 1, the element 1 may be made a low resistivity element. A reactance change and a resistance change of the element due to an external magnetic field change, thus can be effectively detected in drive frequencies two orders of magnitude lower than in the case of a prior art magnetic sensor element. The magnetic anisotropy of the magnetic layer 11 is controlled to prevent magnetic field detection dynamic range variations with drive frequency.
    • 磁传感器元件1包括衬底10,导电材料的导电层12和磁性材料的磁性层11,其包围导电层12.AC从驱动电源50施加到元件,并且 检测器60检测由外部磁场引起的阻抗变化。 磁性层11在与元件1的通电方向正交的方向上具有磁各向异性。通过提供导电材料的导电层12以及赋予磁性层1的磁各向异性,元件1可以 制成低电阻率元件。 由于外部磁场变化引起的元件的电抗变化和电阻变化,因此可以在比现有技术的磁性传感器元件的情况下低两个数量级的驱动频率中被有效地检测。 控制磁性层11的磁各向异性以防止磁场检测与驱动频率的动态范围变化。