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    • 3. 发明授权
    • Disk device
    • 磁盘设备
    • US07996858B2
    • 2011-08-09
    • US12233132
    • 2008-09-18
    • Yutaka Ohira
    • Yutaka Ohira
    • G11B33/02
    • G11B33/027
    • A disk device includes: a front panel; a bottom chassis, including: a bottom plate, having a first end and a second end; and a side plate, formed on the first end, the side plate formed with a first through hole; a connecting member, having a first wall formed with a second through hole and a second wall coupled with the front panel; a hook portion, formed on the first wall so as to extend in a first direction and engaging with the side plate; a screw, fitted into the first through hole and the second through hole thereby coupling the first wall and the side plate; a first engaging member, formed on the side plate; and a second engaging member, formed on the connecting member, and engaging with the first engaging member such that movement thereof in at least the first direction is restricted.
    • 磁盘装置包括:前面板; 底部底盘,包括:底板,具有第一端和第二端; 以及侧板,形成在所述第一端上,所述侧板形成有第一通孔; 连接构件,具有形成有第二通孔的第一壁和与前面板连接的第二壁; 钩部,形成在第一壁上,以沿第一方向延伸并与侧板接合; 安装在第一通孔和第二通孔中的螺钉,由此联接第一壁和侧板; 形成在所述侧板上的第一接合构件; 以及第二接合构件,其形成在所述连接构件上,并且与所述第一接合构件接合,使得在至少所述第一方向上的移动受到限制。
    • 4. 发明申请
    • Disk Device
    • 磁盘设备
    • US20090083775A1
    • 2009-03-26
    • US12233132
    • 2008-09-18
    • Yutaka Ohira
    • Yutaka Ohira
    • G11B33/02
    • G11B33/027
    • A disk device includes: a front panel; a bottom chassis, including: a bottom plate, having a first end and a second end; and a side plate, formed on the first end, the side plate formed with a first through hole; a connecting member, having a first wall formed with a second through hole and a second wall coupled with the front panel; a hook portion, formed on the first wall so as to extend in a first direction and engaging with the side plate; a screw, fitted into the first through hole and the second through hole thereby coupling the first wall and the side plate; a first engaging member, formed on the side plate; and a second engaging member, formed on the connecting member, and engaging with the first engaging member such that movement thereof in at least the first direction is restricted.
    • 磁盘装置包括:前面板; 底部底盘,包括:底板,具有第一端和第二端; 以及侧板,形成在所述第一端上,所述侧板形成有第一通孔; 连接构件,具有形成有第二通孔的第一壁和与前面板连接的第二壁; 钩部,形成在第一壁上,以沿第一方向延伸并与侧板接合; 安装在第一通孔和第二通孔中的螺钉,由此联接第一壁和侧板; 形成在所述侧板上的第一接合构件; 以及第二接合构件,其形成在所述连接构件上,并且与所述第一接合构件接合,使得在至少所述第一方向上的移动受到限制。
    • 7. 发明授权
    • Plasma cleaning gas and plasma cleaning method
    • 等离子清洗气体和等离子体清洗方法
    • US07322368B2
    • 2008-01-29
    • US10415101
    • 2002-08-26
    • Akira SekiyaYuki MitsuiYutaka OhiraTaisuke Yonemura
    • Akira SekiyaYuki MitsuiYutaka OhiraTaisuke Yonemura
    • B08B9/093B08B9/00B08B6/00B44C1/22C03C15/00C03C25/68C23F1/00
    • C23C16/4405B08B7/0035H01L21/3065Y10S438/905
    • A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.
    • 用于CVD室的等离子体清洁气体是用于通过等离子体CVD装置在基板上进行成膜处理之后,清洁CVD室内壁表面上的含硅沉积物和置于CVD室内的构件表面的气体。 清洁气体包括100体积%的氟气,气体可以通过放电产生等离子体。 当通过放电等离子体产生100体积%的氟气,然后用作清洁气体时,即使在1000sccm的总气体流量下,也可以获得极好的蚀刻速率,并且甚至可以稳定地产生等离子体 室压力为400Pa。此外,在上述条件下也可以确保清洁的均匀性。 此外,氟气浓度为100%,使得该装置不复杂,因此清洁气体具有优异的实用性。
    • 9. 发明授权
    • Cleaning gases and etching gases
    • 清洁气体和蚀刻气体
    • US06787053B2
    • 2004-09-07
    • US10129115
    • 2002-05-13
    • Akira SekiyaYuki MitsuiGinjiro TomizawaKatsuya FukaeYutaka OhiraTaisuke Yonemura
    • Akira SekiyaYuki MitsuiGinjiro TomizawaKatsuya FukaeYutaka OhiraTaisuke Yonemura
    • C03C1500
    • C23C16/4405H01L21/3065H01L21/31116Y02C20/30Y02P70/605
    • The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.
    • 本发明的第一室清洁气体和第一含硅膜蚀刻气体包含至少一种选自FCOF,CF 3 OCOF和CF 3 OCF 2 COOF的化合物,以及特定量的O 2和任选的其它气体。 第二室清洁气体和第二含硅膜蚀刻气体包含CF 3 COF,C 3 F 7 COF或CF 2(COF)2和特定量的O 2,并且任选地可以包含其它气体。 本发明的室清洁气体和含硅膜蚀刻气体具有低的全球变暖潜能,并且几乎不产生对环境有害并被认为有助于全球变暖的CF4等废气中的物质 。 因此,气体对于全球环境友好,具有易于处理和优异的废气处理性能。 此外,本发明的室清洁气体具有优异的清洗率。