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1. 发明授权

US06787053B2 Cleaning gases and etching gases 有权
标题翻译：清洁气体和蚀刻气体
公开(公告)号：US06787053B2
公开(公告)日：2004-09-07
申请号：US10129115
申请日：2002-05-13
申请人： Akira Sekiya , Yuki Mitsui , Ginjiro Tomizawa , Katsuya Fukae , Yutaka Ohira , Taisuke Yonemura
发明人： Akira Sekiya , Yuki Mitsui , Ginjiro Tomizawa , Katsuya Fukae , Yutaka Ohira , Taisuke Yonemura
IPC分类号： C03C1500
CPC分类号： C23C16/4405 , H01L21/3065 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.
摘要翻译：本发明的第一室清洁气体和第一含硅膜蚀刻气体包含至少一种选自FCOF，CF 3 OCOF和CF 3 OCF 2 COOF的化合物，以及特定量的O 2和任选的其它气体。第二室清洁气体和第二含硅膜蚀刻气体包含CF 3 COF，C 3 F 7 COF或CF 2（COF）2和特定量的O 2，并且任选地可以包含其它气体。本发明的室清洁气体和含硅膜蚀刻气体具有低的全球变暖潜能，并且几乎不产生对环境有害并被认为有助于全球变暖的CF4等废气中的物质。因此，气体对于全球环境友好，具有易于处理和优异的废气处理性能。此外，本发明的室清洁气体具有优异的清洗率。

2. 发明申请

US20100206480A1 PROCESSES AND EQUIPMENTS FOR PREPARING F2-CONTAINING GASES, AS WELL AS PROCESSES AND EQUIPMENTS FOR MODIFYING THE SURFACES OF ARTICLES 审中-公开
标题翻译：用于制备含F2气体的工艺和设备，以及用于修饰制品表面的工艺和设备
公开(公告)号：US20100206480A1
公开(公告)日：2010-08-19
申请号：US12769611
申请日：2010-04-28
申请人： Takashi Tanioka , Katsuya Fukae , Taisuke Yonemura
发明人： Takashi Tanioka , Katsuya Fukae , Taisuke Yonemura
IPC分类号： C23F1/08 , B01J19/08 , H01L21/306
CPC分类号： C23C8/08 , C01B7/20
摘要： Apparatus for safely and easily preparing an F2-containing gas including equipment for handling a gas containing a fluoro compound that is easier to handle than F2, and in which the fluoro compound is excited and decomposed to convert it into F2 gas before surface modification and then used for surface modification. There is no necessity of providing, storing and transporting a large amount of F2 gas in advance because a necessary amount of F2 gas is obtained immediately before surface modification.
摘要翻译：用于安全且容易地制备含F2气体的装置，包括用于处理比F2更容易处理的含氟化合物的气体的设备，并且其中氟化合物被激发和分解以在表面改性之前将其转化为F2气体，然后用于表面改性。由于在表面改性之前立即获得必要量的F2气体，所以不需要提前，存储和运输大量的F2气体。

3. 发明申请

US20090047792A1 Processes and equipments for preparing F2-containing gases, as well as process and equipments for modifying the surfaces of articles 有权
标题翻译：用于制备含F2气体的方法和设备，以及用于改变制品表面的工艺和设备
公开(公告)号：US20090047792A1
公开(公告)日：2009-02-19
申请号：US10585878
申请日：2005-03-30
申请人： Takashi Tanioka , Katsuya Fukae , Taisuke Yonemura
发明人： Takashi Tanioka , Katsuya Fukae , Taisuke Yonemura
IPC分类号： C01B7/20 , H01L21/461 , B01J19/08 , H01L21/306
CPC分类号： C23C8/08 , C01B7/20
摘要： The present invention provides processes and equipments for safely and easily preparing an F2-containing gas, as well as processes and equipments for surface modification using the F2-containing gas prepared.According to the present invention, a gas containing a fluoro compound that is easier to handle than F2 is supplied and the fluoro compound is excited and decomposed to convert it into F2 gas before surface modification and then used for surface modification. According to the present invention, there is no necessity of providing, storing and transporting a large amount of F2 gas in advance because a necessary amount of F2 gas is obtained immediately before surface modification.A process for preparing an F2-containing gas comprises the steps of exciting at least one fluoro compound in a fluoro compound-containing gas by conferring energy on the fluoro compound-containing gas under reduced pressure; and partially or completely converting the excited fluoro compound-containing gas containing the excited fluoro compound into F2 under normal pressure or overpressure.
摘要翻译：本发明提供用于安全且容易地制备含F2气体的方法和设备，以及使用所制备的含F2气体进行表面改性的工艺和设备。根据本发明，供给含有比F2更容易处理的氟化合物的气体，氟化合物在表面改性前被激发分解成F2气体，然后用于表面改性。根据本发明，由于在表面改性前立即获得必要量的F2气体，所以不需要事先设置，存储和运送大量的F2气体。制备含F2气体的方法包括以下步骤：通过在减压下赋予含氟化合物的气体来激发含氟化合物的气体中的至少一种氟化合物; 并在常压或超压下将含有激发的氟化合物的含氟化合物的含氟气体部分或完全转化为F2。

4. 发明授权

US07919141B2 Processes and equipments for preparing F2-containing gases, as well as process and equipments for modifying the surfaces of articles 有权
标题翻译：用于制备含F2气体的方法和设备，以及用于改变制品表面的工艺和设备
公开(公告)号：US07919141B2
公开(公告)日：2011-04-05
申请号：US10585878
申请日：2005-03-30
申请人： Takashi Tanioka , Katsuya Fukae , Taisuke Yonemura
发明人： Takashi Tanioka , Katsuya Fukae , Taisuke Yonemura
IPC分类号： C23C16/00 , H05H1/24 , C01B7/00
CPC分类号： C23C8/08 , C01B7/20
摘要： The present invention provides processes and equipments for safely and easily preparing an F2-containing gas, as well as processes and equipments for surface modification using the F2-containing gas prepared.According to the present invention, a gas containing a fluoro compound that is easier to handle than F2 is supplied and the fluoro compound is excited and decomposed to convert it into F2 gas before surface modification and then used for surface modification. According to the present invention, there is no necessity of providing, storing and transporting a large amount of F2 gas in advance because a necessary amount of F2 gas is obtained immediately before surface modification.A process for preparing an F2-containing gas comprises the steps of exciting at least one fluoro compound in a fluoro compound-containing gas by conferring energy on the fluoro compound-containing gas under reduced pressure; and partially or completely converting the excited fluoro compound-containing gas containing the excited fluoro compound into F2 under normal pressure or overpressure.
摘要翻译：本发明提供用于安全且容易地制备含F2气体的方法和设备，以及使用所制备的含F2气体进行表面改性的工艺和设备。根据本发明，供给含有比F2更容易处理的氟化合物的气体，氟化合物在表面改性前被激发分解成F2气体，然后用于表面改性。根据本发明，由于在表面改性前立即获得必要量的F2气体，所以不需要事先设置，存储和运送大量的F2气体。制备含F2气体的方法包括以下步骤：通过在减压下赋予含氟化合物的气体来激发含氟化合物的气体中的至少一种氟化合物; 并在常压或超压下将含有激发的氟化合物的含氟化合物的含氟气体部分或完全转化为F2。

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