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1. 发明授权

US5474615A Method for cleaning semiconductor devices 失效
标题翻译：半导体器件清洗方法
公开(公告)号：US5474615A
公开(公告)日：1995-12-12
申请号：US993514
申请日：1992-12-17
申请人： Tomoaki Ishida , Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa
发明人： Tomoaki Ishida , Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa
IPC分类号： H01L21/302 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/3065 , C03C15/00
CPC分类号： H01L21/02046 , H01L21/02057 , H01L21/02071 , H01L21/67028 , Y10S438/963
摘要： A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.
摘要翻译：公开了一种清洁半导体器件的方法，该半导体器件去除或转移粘附在图案或沟槽的侧壁上的污染物。在其上形成图案或沟槽的被处理基板位于处理容器中。与粘附在图案或沟槽的侧壁上的污染物反应以产生去除或改变污染物的活性离子的反应气体被引入处理容器中。反应气体的等离子体通过电子回旋共振产生，以便从引入处理容器的反应气体产生活性离子。根据该方法，等离子体中的反应离子的温度变高，结果是等离子体中的活性离子的运动变得更加活跃。因此，反应离子的水平方向的速度矢量变大，能够有效地去除或污染物附着在图案或沟槽的侧壁上的质量的变化。

2. 发明授权

US5038013A Plasma processing apparatus including an electromagnet with a bird cage core 失效
标题翻译：等离子体处理装置，包括具有鸟笼芯的电磁体
公开(公告)号：US5038013A
公开(公告)日：1991-08-06
申请号：US562669
申请日：1990-08-03
申请人： Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida
发明人： Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32688
摘要： A plasma etching apparatus comprises a chamber, a holding table for holding samples, such as a semiconductor substrate to be etched, in the chamber, a plasma-generating device for generating a plasma within the chamber, and a magnetic-field-forming device which forms a magnetic field perpendicular to the surface of the sample placed on the holding table and parallel the inner wall of the chamber.
摘要翻译：等离子体蚀刻装置包括：腔室，用于保持腔室中待蚀刻的半导体衬底等样品的保持台，用于在腔室内产生等离子体的等离子体产生装置;以及磁场形成装置，形成垂直于放置在保持台上并平行于室的内壁的样品表面的磁场。

3. 发明授权

US5223085A Plasma etching method with enhanced anisotropic property and apparatus thereof 失效
标题翻译：具有增强的等离子体物质的等离子体蚀刻方法及其装置
公开(公告)号：US5223085A
公开(公告)日：1993-06-29
申请号：US653634
申请日：1991-02-12
申请人： Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita
发明人： Kenji Kawai , Moriaki Akazawa , Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/32137 , C23F4/00 , H01L21/32136
摘要： A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.
摘要翻译：公开了一种通过电子回旋共振产生的反应气体的等离子体各向异性蚀刻待处理的基板的方法。待处理的基板位于处理容器中，并且将氯气和氯化氢气体引入处理容器中。从引入处理容器的氯气和氯化氢气体的混合物中，通过电子回旋共振产生混合气体的等离子体。根据这种方法，氯的等离子体的能量由H +的等离子体摄取，这导致氯的动能降低。结果，氯的等离子体沿护套电场垂直地撞击待处理的基板。因此，能够进行强烈的各向异性特性的蚀刻。

4. 发明授权

US5318654A Apparatus for cleaning a substrate with metastable helium 失效
标题翻译：用亚稳态氦气清洗底物的装置
公开(公告)号：US5318654A
公开(公告)日：1994-06-07
申请号：US893832
申请日：1992-06-04
申请人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
发明人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
IPC分类号： H01L21/302 , B08B7/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/67028 , B08B7/0035 , H01J37/32357
摘要： An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.
摘要翻译：一种用于清洁表面的设备包括第一和第二反应容器，用于在第二反应容器中保持在其表面存在异物的待处理物质的保持装置，用于向第一反应中供应氦气的装置容器，用于通过在第一反应容器中激发氦气产生氦离子，电子和亚稳态氦的装置，以及用于分离在第一反应容器中产生的亚稳态氦并将亚稳态氦引入第二反应容器的装置。

5. 发明授权

US5147465A Method of cleaning a surface 失效
标题翻译：清洁表面的方法
公开(公告)号：US5147465A
公开(公告)日：1992-09-15
申请号：US605427
申请日：1990-10-30
申请人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
发明人： Takahiro Maruyama , Toshiaki Ogawa , Hiroshi Morita , Tomoaki Ishida , Kenji Kawai
IPC分类号： H01L21/302 , B08B7/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/67028 , B08B7/0035 , H01J37/32357
摘要： A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and exposing a substance to be processed on the surface of which foreign matter is present to the metastable helium separated from the helium ions and electrons to remove the foreign matter from the substance.
摘要翻译：一种清洁表面的方法，包括通过激发氦气产生氦离子，电子和亚稳态氦，将所述亚稳态氦与氦离子和电子分离，并将待处理物质暴露于其外部物质的表面上从氦离子和电子分离的亚稳态氦从物质中除去异物。

6. 发明申请

US20110081753A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110081753A1
公开(公告)日：2011-04-07
申请号：US12896391
申请日：2010-10-01
申请人： Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
发明人： Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.
摘要翻译：提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MISFET的高介电常数栅极绝缘体。然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

7. 发明授权

US5435886A Method of plasma etching 失效
标题翻译：等离子体蚀刻方法
公开(公告)号：US5435886A
公开(公告)日：1995-07-25
申请号：US247405
申请日：1994-05-23
申请人： Nobuo Fujiwara , Takahiro Maruyama , Kenji Kawai , Takahiro Hoshiko
发明人： Nobuo Fujiwara , Takahiro Maruyama , Kenji Kawai , Takahiro Hoshiko
IPC分类号： C23F4/00 , H01J37/02 , H01J37/32 , H01L21/302 , H01L21/3065 , B44C1/22
CPC分类号： H01J37/32623 , H01J37/026 , H01J37/32192 , H01J37/32678 , H01J37/32706 , H01J2237/0044 , H01J2237/3347
摘要： A method of electron cyclotron resonance plasma etching including generating a constant plasma in a gas in a chamber containing a semiconductor wafer by supplying microwave energy to the chamber continuously and applying a pulsed direct current bias to the semiconductor wafer, wherein the pulsed bias has a period substantially equal to a time constant determined by the capacitance of the semiconductor wafer and the resistance of an ion sheath at the surface of the semiconductor wafer.
摘要翻译：一种电子回旋共振等离子体蚀刻方法，其包括通过向所述腔室连续供给微波能量并向所述半导体晶片施加脉冲直流偏压，在包含半导体晶片的腔室中的气体中产生恒定的等离子体，其中所述脉冲偏压具有周期基本上等于由半导体晶片的电容和离子鞘在半导体晶片表面的电阻确定的时间常数。

8. 发明授权

US08754471B2 Semiconductor device having gate in recess 有权
标题翻译：半导体器件具有凹槽中的栅极
公开(公告)号：US08754471B2
公开(公告)日：2014-06-17
申请号：US13040610
申请日：2011-03-04
申请人： Toshiaki Iwamatsu , Kozo Ishikawa , Masashi Kitazawa , Kiyoshi Hayashi , Takahiro Maruyama , Masaaki Shinohara , Kenji Kawai
发明人： Toshiaki Iwamatsu , Kozo Ishikawa , Masashi Kitazawa , Kiyoshi Hayashi , Takahiro Maruyama , Masaaki Shinohara , Kenji Kawai
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/66 , H01L29/78
CPC分类号： H01L29/66621 , H01L21/28 , H01L29/66795 , H01L29/772 , H01L29/7834 , Y02E10/50
摘要： There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.
摘要翻译：提供了可以在不劣化特性的情况下小型化的半导体器件及其制造方法。半导体器件包括：主表面，源极区域和漏极区域在主表面彼此分离形成的半导体衬底;形成在源区域和漏极区域之间的主表面上的栅电极层;第一形成为与源极区域的表面接触的导电层，以及形成为与漏极区域的表面接触的第二导电层。在主表面上形成凹部，以便通过栅极电极层下面的部分从第一导电层和源极区域之间的接触区域延伸到第二导电层和漏极区域之间的接触区域。

9. 发明授权

US07989283B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07989283B2
公开(公告)日：2011-08-02
申请号：US12896391
申请日：2010-10-01
申请人： Shinichi Yamanari , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
发明人： Shinichi Yamanari , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.
摘要翻译：提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MISFET的高介电常数栅极绝缘体。然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

10. 发明申请

US20070182218A1 Sun roof drive device 有权
标题翻译：太阳屋顶驱动装置
公开(公告)号：US20070182218A1
公开(公告)日：2007-08-09
申请号：US10588752
申请日：2005-02-04
申请人： Takashi Kanai , Takahiro Maruyama , Yutaka Nagai , Munehiro Kawai , Yoshikazu Ito
发明人： Takashi Kanai , Takahiro Maruyama , Yutaka Nagai , Munehiro Kawai , Yoshikazu Ito
IPC分类号： B60J7/043
CPC分类号： H02P6/18 , B60J7/0573 , H02P6/16
摘要： The sun roof drive device opens and closes a vehicle sun roof by a DC brushless motor, which is driven by rectangular waves when high torque is required at a low rotational speed and which is driven by sinusoidal waves or pseudo-sinusoidal waves when low noise is required.
摘要翻译：太阳屋顶驱动装置通过直流无刷电动机打开和关闭车辆屋顶，该直流无刷电动机以低转速需要高扭矩并由正弦波或伪正弦波驱动时由矩形波驱动，当低噪声为需要。

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