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1. 发明授权

US6149346A Method for replacement of existing pipes and device for carrying out the method 失效
标题翻译：现有管道更换方法及其实施方法
公开(公告)号：US6149346A
公开(公告)日：2000-11-21
申请号：US59298
申请日：1998-04-14
申请人： Nobuhisa Takamatsu , Takayuki Kurobe , Toshio Hirai , Toshio Akesaka
发明人： Nobuhisa Takamatsu , Takayuki Kurobe , Toshio Hirai , Toshio Akesaka
IPC分类号： F16L1/024 , E21B7/30 , F16L1/00 , F16L55/165 , F16L55/18
CPC分类号： E21B7/30 , F16L1/00 , F16L55/1658
摘要： A drawing device 4 is mounted in a drawing shaft 3, and pipe replacement device A connected with new pipes is arranged on the side of starting shaft 2, wherein the drawing device 4 and the pipe replacement device A is connected through pull-rods 5 inserted into existing pipes with each other. The pipe replacement device A is comprised of a cutting part 11 including cutter bodies 14 (shanks 14a to 14i) arranged in the axial direction and at angular intervals in the circumferential direction, an expanding part 12 having expanding rollers 18a to 18f, and a connecting part 13. Each cutter body 14 has a plurality of cutting edges, wherein distances between the respective cutting edges and the center of the circle become larger in order from the forward side toward the backward side. While the pipe replacement device A is traveled in the inside of cast iron pipes, the inner wall of cast iron pipes is cut by the cutter bodies 14 to form grooves. Splitting of existing pipes into arc-shaped pieces 1a is made starting from the grooves. Arc-shaped pieces 1a are pressed into the ground, by which a tunnel 7 surrounded by arc-shaped pieces 1a and portions of consolidated earth is formed, while new pipes 6 are introduced into the tunnel 7, and besides the new pipes 6 are protected by protective armors formed of arc-shaped pieces 1a.
摘要翻译：牵引装置4安装在牵引轴3中，在起动轴2的侧面配置有与新管连接的管道更换装置A，其中，拉拔装置4和管道更换装置A通过插入的拉杆5连接进入现有的管道。管道更换装置A包括切削部11，该切削部11包括沿轴向布置并且沿圆周方向成角度间隔的切割器主体14（柄14a至14i），具有扩展辊18a至18f的扩展部12和连接每个切割器主体14具有多个切割边缘，其中各个切割边缘和圆心之间的距离从前侧朝向后侧依次变大。当管路更换装置A行进在铸铁管内部时，铸铁管的内壁被切割体14切断，形成槽。从凹槽开始将现有管道分割成弧形件1a。弧形片1a被压入地面，由弧形片1a围绕的隧道7和固结土的一部分形成，而新的管道6被引入隧道7中，并且新的管道6被保护由弧形件1a形成的防护装甲。

2. 发明授权

US06592798B1 Method for preparing eutectic ceramics 失效
标题翻译：制备共晶陶瓷的方法
公开(公告)号：US06592798B1
公开(公告)日：2003-07-15
申请号：US09980738
申请日：2002-04-08
申请人： Mamoru Omori , Toshio Hirai , Masao Tokita
发明人： Mamoru Omori , Toshio Hirai , Masao Tokita
IPC分类号： C04B3332
CPC分类号： C04B35/645 , C04B35/117 , C04B35/44 , C04B35/50 , C04B35/64
摘要： A method for advantageously producing sintered eutectic ceramics having a homogenous and dense structure, in particular, a eutectic containing a rare earth aluminate compound. The method allows eutectic powder of alumina and a rare earth aluminate compound to stand at a temperature of 1300-1700° C. for 1-120 minutes under vacuum or in an non-oxidative atmosphere under a pressure of 5-100 MPa using a spark plasma sintering apparatus, thereby causing crystal growth to occur to obtain a rare earth aluminate eutectic structure crystal.
摘要翻译：一种有利地生产具有均匀和致密结构的烧结共晶陶瓷的方法，特别是含有稀土铝酸盐化合物的共晶体。该方法允许氧化铝和稀土铝酸盐化合物的共晶粉末在真空下或在非氧化性气氛中在5-100MPa的压力下在1300-1700℃的温度下放置1-120分钟，使用火花等离子体烧结装置，从而引起晶体生长以获得稀土铝酸盐共晶结构晶体。

3. 发明授权

US4920014A Zirconia film and process for preparing it 失效
标题翻译：氧化锆薄膜及其制备方法
公开(公告)号：US4920014A
公开(公告)日：1990-04-24
申请号：US161101
申请日：1988-02-26
申请人： Toshio Hirai , Hisanori Yamane
发明人： Toshio Hirai , Hisanori Yamane
IPC分类号： C03C17/23 , C23C16/40 , C30B25/02 , H01M8/12 , C03C17/25
CPC分类号： H01M8/1253 , C03C17/23 , C23C16/405 , C30B25/02 , C30B29/16 , C03C2217/22 , C03C2218/152 , Y02E60/525 , Y02P70/56
摘要： A zirconia film formed on a substrate and having substantially one or two kinds of particular planes such as (200), (111) or (111) planes only oriented in parallel to the surface of the substrate, and a process for preparing it. This zirconia film is dense, and improved in the thermal resistance, thermal insulation properties and corrosion resistance.
摘要翻译：形成在基板上并且具有基本上一个或两种特定平面（例如仅平行于基板的表面定向的（200），（111）或（＆上升和111））平面的氧化锆膜及其制备方法。该氧化锆薄膜致密，耐热性，绝热性和耐蚀性得到改善。

4. 发明授权

US4751099A Method of producing a functionally gradient material 失效
标题翻译：生产功能梯度材料的方法
公开(公告)号：US4751099A
公开(公告)日：1988-06-14
申请号：US947419
申请日：1986-12-24
申请人： Masayuki Niino , Akio Suzuki , Toshio Hirai , Ryuzo Watanabe , Tohru Hirano , Nobuhito Kuroishi
发明人： Masayuki Niino , Akio Suzuki , Toshio Hirai , Ryuzo Watanabe , Tohru Hirano , Nobuhito Kuroishi
IPC分类号： B32B18/00 , B22F3/11 , B22F7/02 , B32B7/04 , B32B15/04 , C23C4/02 , C23C4/06 , C23C14/02 , C23C14/06 , C23C14/22 , C23C16/02 , C23C16/30 , C23C16/44 , B05D1/08
CPC分类号： C23C14/22 , B22F3/1109 , B22F7/02 , C23C14/027 , C23C14/0688 , C23C16/029 , C23C16/30 , C23C16/44 , C23C28/3215 , C23C28/3455 , C23C28/36 , C23C4/02 , C23C4/06 , B22F2998/00 , Y02T50/67
摘要： The present invention relates to a method of producing a functionally grant material whose components and structure are continuously adjusted by the coating, plating and powder metallurgy techniques to change its function in turn and provide a method of producing a functionally gradient material superior in heat-resistance, corrosion-resistance and resistance to thermal fatigue by distributing a third component having a lower Young's modulus or formed of high-strength material sufficiently durable to the fracture strength among ceramics as a first component and metals or other ceramics as a second component to change the function.
摘要翻译：本发明涉及一种生产功能梯度材料的方法，其组分和结构通过涂层，电镀和粉末冶金技术连续调整，依次改变其功能，并提供一种生产耐热性优异的功能梯度材料的方法耐腐蚀性和耐热疲劳性，通过将具有较低杨氏模量的第三成分或具有足够耐久性的高强度材料形成为第一成分的陶瓷之间的断裂强度，以及作为第二成分的金属或其他陶瓷，功能。

5. 发明授权

US4312924A Super hard highly pure silicon nitrides 失效
标题翻译：超硬的高纯氮化硅
公开(公告)号：US4312924A
公开(公告)日：1982-01-26
申请号：US129218
申请日：1980-03-11
申请人： Toshio Hirai , Koichi Niihara
发明人： Toshio Hirai , Koichi Niihara
IPC分类号： C01B21/068 , C04B35/584 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/38 , H01M2/08 , C30B29/00
CPC分类号： C23C16/45563 , C04B35/584 , C23C16/345 , C23C16/455 , C23C16/45576 , C30B25/02 , C30B29/38 , C30B29/605 , H01M2/08 , Y10S117/902 , Y10S117/915
摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with the second pipe for silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than a distance from an opening end of the second pipe to the substrate.
摘要翻译：超硬度高的氮化硅包括在负载为100g的情况下，晶粒尺寸为1-50μm和微维氏硬度为3,000kg / mm 2的优先取向的结晶氮化硅，具有平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为通过在由500℃-100℃加热的基板上吹入氮沉积源和硅沉积源，由管组件制成的吹管，其中氮沉积源的第一管被第二硅沉积管包围并且从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

6. 发明授权

US06975987B1 Device and method for synthesizing speech 失效
标题翻译：用于合成语音的装置和方法
公开(公告)号：US06975987B1
公开(公告)日：2005-12-13
申请号：US09678544
申请日：2000-10-04
申请人： Seiichi Tenpaku , Toshio Hirai
发明人： Seiichi Tenpaku , Toshio Hirai
IPC分类号： G10L21/04 , G01L13/00 , G01L13/04 , G10L13/02 , G10L13/06
CPC分类号： G10L13/033
摘要： The present invention provides pitch conversion processing technology capable of minimizing the distortion of speech sound naturalness. A speech waveform in a pitch-unit is considered to be divided into two segments: 1) the segment of β, that starts from the minus peak, where the waveform depending on the shape of vocal tracts appears, and 2) the segment of γ where the waveform depending on the vocal tract shape is attenuating and converging on the next minus peak. In addition, α is the point where a minus peak appears along with the glottal closure. Based on characteristics of speech waveforms, the present invention processes waveform for converting pitch in the segment of γ just before the next minus peak, which is least affected by the minus peak associated with the glottal closure. As such, waveform processing can be performed by keeping the complete contour of waveform at around the peak, and thereby reducing the effects of pitch conversion.
摘要翻译：本发明提供了能够最小化语音自然度的失真的音高转换处理技术。认为音调单元中的语音波形被分为两个部分：1）从负峰开始的β段，其中出现根据声带形状的波形，以及2）伽马段其中取决于声道形状的波形衰减并会聚在下一个负峰上。另外，α是出现与峰值闭合一起出现负峰的点。基于语音波形的特征，本发明处理波形，用于在刚好在与声门关闭相关的负峰值影响的下一个负峰之前的伽马段中转换音调。因此，可以通过将波形的完整轮廓保持在峰值附近来进行波形处理，从而降低音调转换的影响。

7. 发明授权

US5429998A Crystalline sialon having wurtzite structure 失效
标题翻译：具有纤锌矿结构的结晶塞隆
公开(公告)号：US5429998A
公开(公告)日：1995-07-04
申请号：US134955
申请日：1993-10-12
申请人： Yoshihiro Someno , Toshio Hirai , Makoto Sasaki
发明人： Yoshihiro Someno , Toshio Hirai , Makoto Sasaki
IPC分类号： C01B21/082 , C04B35/597 , C23C16/30 , C04B35/58
CPC分类号： C04B35/597
摘要： A crystalline sialon comprising crystals containing aluminum, silicon, nitrogen and oxygen, in which the crystal structure has a hexagonal system wurtzite structure identical with that of AlN crystals, and the volume of the unit cell thereof has a value smaller than that of the AlN crystals. The crystalline sialon can be synthesized by mixing a silicon-containing gas, an aluminum halide, a nitrogen atom-containing gas and an oxygen atom-containing gas, converting the gas mixture into plasmas by microwave discharging and depositing a film on the surface of a substrate, in which the temperature of the substrate, while controlling a flow rate of the silicon-containing gas and a flow rate of the oxygen-containing gas. The crystalline sialon of the present invention has high hardness, is excellent in oxidation resistance, as well as excellent in heat conductivity and adhesion with a superhard substrate.
摘要翻译：包含含有铝，硅，氮和氧的晶体的结晶塞隆，其中晶体结构具有与AlN晶体相同的六方晶系纤锌矿结构，并且其晶胞体积小于AlN晶体的体积。可以通过混合含硅气体，卤化铝，含氮原子的气体和含氧原子的气体来合成结晶硅铝氧氮，通过微波放电将气体混合物转化成等离子体，并将膜沉积在衬底，其中衬底的温度同时控制含硅气体的流量和含氧气体的流量。本发明的结晶塞隆具有高硬度，耐氧化性优异，导热性优异且与超硬底材的粘合性优异。

8. 发明授权

US5173459A Si.sub.3 N.sub.4 -A1.sub.2 O.sub.3 composite sintered bodies and method of producing the same 失效
标题翻译： Si3N4-A12O3复合烧结体及其制造方法
公开(公告)号：US5173459A
公开(公告)日：1992-12-22
申请号：US611338
申请日：1990-07-23
申请人： Koichi Niihara , Atsushi Nakahira , Toshio Hirai
发明人： Koichi Niihara , Atsushi Nakahira , Toshio Hirai
IPC分类号： C04B35/111
CPC分类号： C04B35/111
摘要： An Si.sub.3 N.sub.4 -Al.sub.2 O.sub.3 composite sintered body suitable for use in high-temperature structural materials consists of .alpha.-Al.sub.2 O.sub.3 and at least one crystal phase of Si.sub.3 N.sub.4 and sialon and is produced by sintering a shaped body of a particular Si.sub.3 N.sub.4 -Al.sub.2 O.sub.3 mixed powder at 1,500.degree.-1,900.degree. C.
摘要翻译：适用于高温结构材料的Si3N4-Al2O3复合烧结体由α-Al2O3和至少一种Si3N4和赛隆的晶相组成，并通过在1500°烧结特定Si3N4-Al2O3混合粉末的成形体而制备。 -1,900℃

9. 发明授权

US5164221A Forming die manufacturing method 失效
标题翻译：成型模具制造方法
公开(公告)号：US5164221A
公开(公告)日：1992-11-17
申请号：US638240
申请日：1991-01-04
申请人： Yoshihiro Someno , Toshio Hirai , Makoto Sasaki
发明人： Yoshihiro Someno , Toshio Hirai , Makoto Sasaki
IPC分类号： C03B11/00 , C03B11/08 , C03B40/02 , C23C16/30 , C23C16/34 , C23C16/50 , C23C16/511
CPC分类号： C23C16/511 , C03B11/086 , C23C16/303 , C23C16/308 , C03B2215/22 , C03B2215/26 , Y02P40/57
摘要： A manufacturing method of a forming die includes the steps of depositing a film of aluminum nitride or aluminum oxynitride on the forming surface of a forming member by passing an electric discharge through a mixture gas of halide of aluminum and a gas containing nitrogen atoms and hydrogen atoms or a mixture gas of halide of aluminum, a gas containing nitrogen atoms and a gas containing oxygen atoms by the application of a microwave and thereby ionizing the mixture gas, and fixing such a forming member on a die.
摘要翻译：成形模具的制造方法包括以下步骤：通过使铝的卤化物和含有氮原子和氢原子的气体的混合气体通过放电，在成形构件的成形表面上沉积氮化铝或氮氧化铝膜或铝的卤化物的混合气体，含有氮原子的气体和含有氧原子的气体通过微波进行离子化，从而使混合气体电离，并将这样的成型体固定在模具上。

10. 发明授权

US4312921A Super hard-highly pure silicon nitrides 失效
标题翻译：超级高纯度氮化硅
公开(公告)号：US4312921A
公开(公告)日：1982-01-26
申请号：US926623
申请日：1978-07-21
申请人： Toshio Hirai , Koichi Niihara
发明人： Toshio Hirai , Koichi Niihara
IPC分类号： C01B21/068 , C04B35/584 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/38 , H01M2/08 , C30B29/00
CPC分类号： C23C16/45563 , C04B35/584 , C23C16/345 , C23C16/455 , C23C16/45576 , C30B25/02 , C30B29/38 , C30B29/605 , H01M2/08 , Y10S117/902 , Y10S117/915
摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.
摘要翻译：超硬度高的氮化硅包括在负载为100g的情况下，晶粒尺寸为1-50μm和微维氏硬度为3,000kg / mm 2的优先取向的结晶氮化硅，具有平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为通过在由管组件构成的吹管中将氮沉积源和硅沉积源吹到加热到500℃-100℃的基板上，其中用于氮沉积源的第一管被第二管用于硅沉积源和从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

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