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1. 发明授权

US5173459A Si.sub.3 N.sub.4 -A1.sub.2 O.sub.3 composite sintered bodies and method of producing the same 失效
标题翻译： Si3N4-A12O3复合烧结体及其制造方法
公开(公告)号：US5173459A
公开(公告)日：1992-12-22
申请号：US611338
申请日：1990-07-23
申请人： Koichi Niihara , Atsushi Nakahira , Toshio Hirai
发明人： Koichi Niihara , Atsushi Nakahira , Toshio Hirai
IPC分类号： C04B35/111
CPC分类号： C04B35/111
摘要： An Si.sub.3 N.sub.4 -Al.sub.2 O.sub.3 composite sintered body suitable for use in high-temperature structural materials consists of .alpha.-Al.sub.2 O.sub.3 and at least one crystal phase of Si.sub.3 N.sub.4 and sialon and is produced by sintering a shaped body of a particular Si.sub.3 N.sub.4 -Al.sub.2 O.sub.3 mixed powder at 1,500.degree.-1,900.degree. C.
摘要翻译：适用于高温结构材料的Si3N4-Al2O3复合烧结体由α-Al2O3和至少一种Si3N4和赛隆的晶相组成，并通过在1500°烧结特定Si3N4-Al2O3混合粉末的成形体而制备。 -1,900℃

2. 发明授权

US4312924A Super hard highly pure silicon nitrides 失效
标题翻译：超硬的高纯氮化硅
公开(公告)号：US4312924A
公开(公告)日：1982-01-26
申请号：US129218
申请日：1980-03-11
申请人： Toshio Hirai , Koichi Niihara
发明人： Toshio Hirai , Koichi Niihara
IPC分类号： C01B21/068 , C04B35/584 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/38 , H01M2/08 , C30B29/00
CPC分类号： C23C16/45563 , C04B35/584 , C23C16/345 , C23C16/455 , C23C16/45576 , C30B25/02 , C30B29/38 , C30B29/605 , H01M2/08 , Y10S117/902 , Y10S117/915
摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with the second pipe for silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than a distance from an opening end of the second pipe to the substrate.
摘要翻译：超硬度高的氮化硅包括在负载为100g的情况下，晶粒尺寸为1-50μm和微维氏硬度为3,000kg / mm 2的优先取向的结晶氮化硅，具有平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为通过在由500℃-100℃加热的基板上吹入氮沉积源和硅沉积源，由管组件制成的吹管，其中氮沉积源的第一管被第二硅沉积管包围并且从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

3. 发明授权

US4312921A Super hard-highly pure silicon nitrides 失效
标题翻译：超级高纯度氮化硅
公开(公告)号：US4312921A
公开(公告)日：1982-01-26
申请号：US926623
申请日：1978-07-21
申请人： Toshio Hirai , Koichi Niihara
发明人： Toshio Hirai , Koichi Niihara
IPC分类号： C01B21/068 , C04B35/584 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/38 , H01M2/08 , C30B29/00
CPC分类号： C23C16/45563 , C04B35/584 , C23C16/345 , C23C16/455 , C23C16/45576 , C30B25/02 , C30B29/38 , C30B29/605 , H01M2/08 , Y10S117/902 , Y10S117/915
摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.
摘要翻译：超硬度高的氮化硅包括在负载为100g的情况下，晶粒尺寸为1-50μm和微维氏硬度为3,000kg / mm 2的优先取向的结晶氮化硅，具有平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为通过在由管组件构成的吹管中将氮沉积源和硅沉积源吹到加热到500℃-100℃的基板上，其中用于氮沉积源的第一管被第二管用于硅沉积源和从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

4. 发明授权

US4224296A Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same 失效
标题翻译：超强度高纯氮化硅，及其制造方法和装置
公开(公告)号：US4224296A
公开(公告)日：1980-09-23
申请号：US926611
申请日：1978-07-21
申请人： Toshio Hirai , Koichi Niihara
发明人： Toshio Hirai , Koichi Niihara
IPC分类号： C01B21/068 , C04B35/584 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/38 , H01M2/08 , C10B21/06
CPC分类号： C23C16/45563 , C04B35/584 , C23C16/345 , C23C16/455 , C23C16/45576 , C30B25/02 , C30B29/38 , C30B29/605 , H01M2/08 , Y10S117/902 , Y10S117/915
摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.
摘要翻译：超硬度高的氮化硅包括在负载为100g的情况下，晶粒尺寸为1-50μm和微维氏硬度为3,000kg / mm 2的优先取向的结晶氮化硅，具有平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为通过在由管组件构成的吹管中将氮沉积源和硅沉积源吹到加热到500℃-100℃的基板上，其中用于氮沉积源的第一管被第二管用于硅沉积源和从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

5. 发明授权

US4118539A Super hard-highly pure silicon nitrides having a preferred crystal face orientation 失效
标题翻译：具有优选晶面取向的超硬度高纯氮化硅
公开(公告)号：US4118539A
公开(公告)日：1978-10-03
申请号：US756282
申请日：1977-01-03
申请人： Toshio Hirai , Koichi Niihara
发明人： Toshio Hirai , Koichi Niihara
IPC分类号： C01B21/068 , C04B35/584 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/38 , H01M2/08 , C01B21/06 , B01J17/32
CPC分类号： C23C16/45563 , C04B35/584 , C23C16/345 , C23C16/455 , C23C16/45576 , C30B25/02 , C30B29/38 , C30B29/605 , H01M2/08 , Y10S117/902 , Y10S117/915
摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.
摘要翻译：超硬度高的氮化硅包括在负载为100g的情况下，晶粒尺寸为1-50μm和微维氏硬度为3,000kg / mm 2的优先取向的结晶氮化硅，具有平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为通过在由500℃-100℃加热的基板上吹入氮气沉积源和硅沉积源而制成，其中管道组件包括用于氮沉积源的第一管道用于硅沉积的第二管道源和从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

6. 发明授权

US4340568A Super hard highly pure silicon nitrides and a process and apparatus for producing the same 失效
标题翻译：超硬高纯氮化硅及其制造方法和装置
公开(公告)号：US4340568A
公开(公告)日：1982-07-20
申请号：US115728
申请日：1980-01-28
申请人： Toshio Hirai , Koichi Niihara
发明人： Toshio Hirai , Koichi Niihara
IPC分类号： C01B21/068 , C04B35/584 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/38 , H01M2/08 , C30B35/00
CPC分类号： C23C16/45563 , C04B35/584 , C23C16/345 , C23C16/455 , C23C16/45576 , C30B25/02 , C30B29/38 , C30B29/605 , H01M2/08 , Y10S117/902 , Y10S117/915
摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 5,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.
摘要翻译：超硬度高的氮化硅包括在100g负载下具有1-50μm的晶粒尺寸和5000Kg / mm 2的微维氏硬度的优先取向的结晶氮化硅，具有平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为通过在由管组件构成的吹管中将氮沉积源和硅沉积源吹到加热到500℃-100℃的基板上，其中用于氮沉积源的第一管被第二管用于硅沉积源和从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

7. 发明授权

US4746635A High strength and high hardness alumina-zirconia-silicon carbide sintered ceramic composite and its manufacturing process 失效
标题翻译：高强度高硬度氧化铝 - 氧化锆 - 碳化硅烧结陶瓷复合材料及其制造工艺
公开(公告)号：US4746635A
公开(公告)日：1988-05-24
申请号：US864353
申请日：1986-05-19
申请人： Sigeo Inoue , Tetsuo Uchiyama , Toshio Hirai , Koichi Niihara
发明人： Sigeo Inoue , Tetsuo Uchiyama , Toshio Hirai , Koichi Niihara
IPC分类号： C04B35/119 , C04B35/645 , C04B35/80 , C04B35/56 , C01B33/26
CPC分类号： C04B35/119 , C04B35/645 , C04B35/803
摘要： An alumina-zirconia-silicon carbide sintered ceramic composite having high strength and high hardness is composed of 5 to 50 volume percent of partially stabilized zirconia powder of mean particle size between 0.1 and 1.0 .mu.m, 3 to 40 volume percent of silicon carbide powder of mean particle size smaller than 1 .mu.m or silicon carbide whiskers of 1 .mu.m or less in diameter with an aspect ratio between 3 and 200 or combination of said silicon carbide powder and said silicon carbide whiskers, the balance being substantially alumina powder, wherein zirconia plus silicon carbide accounts for 55 volume percent at most of the total.The sintered ceramic composite is manufactured by making a mixed powder composed of 5 to 50 volume percent of partially stabilized zirconia powder of mean particle size between 0.1 and 1.0 .mu.m, 3 to 40 volume percent of silicon carbide powder of mean particle size smaller than 1 .mu.m or silicon carbide whiskers of 1 .mu.m or less in diameter with an aspect ratio between 3 and 200 or combination of said silicon carbide powder, and said silicon carbide whiskers, the balance being substantially alumina powder, wherein zirconia plus silicon carbide accounts for 55 volume percent at most of the total, and then sintering the molded mixed powder at a temperature between 1400.degree. and 1800.degree. C.Further, the mixed powder to be molded and sintered is made on a ball mill equipped with a pot made of one or more of the ceramic materials of which such sintered ceramic is composed.
摘要翻译：具有高强度和高硬度的氧化铝 - 氧化锆 - 碳化硅烧结陶瓷复合体由平均粒度为0.1〜1.0μm的5〜50体积％的部分稳定化的氧化锆粉末，3〜40体积％的碳化硅粉末平均粒度小于1μm或直径1μm或更小的碳化硅晶须，纵横比为3至200，或所述碳化硅粉末和所述碳化硅晶须的组合，余量基本上为氧化铝粉末，其中氧化锆加上碳化硅占总量的55％。烧结陶瓷复合体通过将由5〜50体积％的平均粒径为0.1〜1.0μm的部分稳定化的氧化锆粉末，平均粒径小于1的碳化硅粉末的3〜40体积％微米或碳化硅晶须直径为1μm或更小，纵横比为3至200或所述碳化硅粉末和所述碳化硅晶须的组合，余量基本上为氧化铝粉末，其中氧化锆加上碳化硅占据最多为55体积％，然后在1400〜1800℃的温度下烧结成型的混合粉末。此外，待模制和烧结的混合粉末在装备有由一个或更多的这种烧结陶瓷组成的陶瓷材料。

8. 发明授权

US4279689A Process for producing super hard-highly pure silicon nitrides 失效
标题翻译：用于生产超硬度高纯氮化硅的方法
公开(公告)号：US4279689A
公开(公告)日：1981-07-21
申请号：US926612
申请日：1978-07-21
申请人： Toshio Hirai , Koichi Niihara
发明人： Toshio Hirai , Koichi Niihara
IPC分类号： C01B21/068 , C04B35/584 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/38 , H01M2/08 , C30B25/10
CPC分类号： C23C16/45563 , C04B35/584 , C23C16/345 , C23C16/455 , C23C16/45576 , C30B25/02 , C30B29/38 , C30B29/605 , H01M2/08 , Y10S117/902 , Y10S117/915
摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.
摘要翻译：超硬度高的氮化硅包括在负载为100g的情况下，晶粒尺寸为1-50μm和微维氏硬度为3,000kg / mm 2的优先取向的结晶氮化硅，具有平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为通过在由管组件构成的吹管中将氮沉积源和硅沉积源吹到加热到500℃-100℃的基板上，其中用于氮沉积源的第一管被第二管用于硅沉积源和从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

9. 发明授权

US06592798B1 Method for preparing eutectic ceramics 失效
标题翻译：制备共晶陶瓷的方法
公开(公告)号：US06592798B1
公开(公告)日：2003-07-15
申请号：US09980738
申请日：2002-04-08
申请人： Mamoru Omori , Toshio Hirai , Masao Tokita
发明人： Mamoru Omori , Toshio Hirai , Masao Tokita
IPC分类号： C04B3332
CPC分类号： C04B35/645 , C04B35/117 , C04B35/44 , C04B35/50 , C04B35/64
摘要： A method for advantageously producing sintered eutectic ceramics having a homogenous and dense structure, in particular, a eutectic containing a rare earth aluminate compound. The method allows eutectic powder of alumina and a rare earth aluminate compound to stand at a temperature of 1300-1700° C. for 1-120 minutes under vacuum or in an non-oxidative atmosphere under a pressure of 5-100 MPa using a spark plasma sintering apparatus, thereby causing crystal growth to occur to obtain a rare earth aluminate eutectic structure crystal.
摘要翻译：一种有利地生产具有均匀和致密结构的烧结共晶陶瓷的方法，特别是含有稀土铝酸盐化合物的共晶体。该方法允许氧化铝和稀土铝酸盐化合物的共晶粉末在真空下或在非氧化性气氛中在5-100MPa的压力下在1300-1700℃的温度下放置1-120分钟，使用火花等离子体烧结装置，从而引起晶体生长以获得稀土铝酸盐共晶结构晶体。

10. 发明授权

US6149346A Method for replacement of existing pipes and device for carrying out the method 失效
标题翻译：现有管道更换方法及其实施方法
公开(公告)号：US6149346A
公开(公告)日：2000-11-21
申请号：US59298
申请日：1998-04-14
申请人： Nobuhisa Takamatsu , Takayuki Kurobe , Toshio Hirai , Toshio Akesaka
发明人： Nobuhisa Takamatsu , Takayuki Kurobe , Toshio Hirai , Toshio Akesaka
IPC分类号： F16L1/024 , E21B7/30 , F16L1/00 , F16L55/165 , F16L55/18
CPC分类号： E21B7/30 , F16L1/00 , F16L55/1658
摘要： A drawing device 4 is mounted in a drawing shaft 3, and pipe replacement device A connected with new pipes is arranged on the side of starting shaft 2, wherein the drawing device 4 and the pipe replacement device A is connected through pull-rods 5 inserted into existing pipes with each other. The pipe replacement device A is comprised of a cutting part 11 including cutter bodies 14 (shanks 14a to 14i) arranged in the axial direction and at angular intervals in the circumferential direction, an expanding part 12 having expanding rollers 18a to 18f, and a connecting part 13. Each cutter body 14 has a plurality of cutting edges, wherein distances between the respective cutting edges and the center of the circle become larger in order from the forward side toward the backward side. While the pipe replacement device A is traveled in the inside of cast iron pipes, the inner wall of cast iron pipes is cut by the cutter bodies 14 to form grooves. Splitting of existing pipes into arc-shaped pieces 1a is made starting from the grooves. Arc-shaped pieces 1a are pressed into the ground, by which a tunnel 7 surrounded by arc-shaped pieces 1a and portions of consolidated earth is formed, while new pipes 6 are introduced into the tunnel 7, and besides the new pipes 6 are protected by protective armors formed of arc-shaped pieces 1a.
摘要翻译：牵引装置4安装在牵引轴3中，在起动轴2的侧面配置有与新管连接的管道更换装置A，其中，拉拔装置4和管道更换装置A通过插入的拉杆5连接进入现有的管道。管道更换装置A包括切削部11，该切削部11包括沿轴向布置并且沿圆周方向成角度间隔的切割器主体14（柄14a至14i），具有扩展辊18a至18f的扩展部12和连接每个切割器主体14具有多个切割边缘，其中各个切割边缘和圆心之间的距离从前侧朝向后侧依次变大。当管路更换装置A行进在铸铁管内部时，铸铁管的内壁被切割体14切断，形成槽。从凹槽开始将现有管道分割成弧形件1a。弧形片1a被压入地面，由弧形片1a围绕的隧道7和固结土的一部分形成，而新的管道6被引入隧道7中，并且新的管道6被保护由弧形件1a形成的防护装甲。

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