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1. 发明授权

US07642618B2 Semiconductor devices with inductors 有权
标题翻译：具有电感器的半导体器件
公开(公告)号：US07642618B2
公开(公告)日：2010-01-05
申请号：US11183800
申请日：2005-07-19
申请人： Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
发明人： Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
IPC分类号： H01L27/00 , H01F27/28
CPC分类号： H01L23/5227 , H01F17/0006 , H01L2924/0002 , H01L2924/3011 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B5/1271 , H01L2924/00
摘要： Semiconductor devices are provided with high performance high-frequency circuits in which interference caused by inductors is reduced. In a semiconductor device including a modulator circuit to modulate a carrier wave by a base band signal to output an RF signal and a demodulator circuit to demodulate the RF signal by use of the carrier wave to gain the base band signal and a local oscillator to generate the carrier wave, inductors respectively having a closed loop wire are adopted. Interference caused by mutual inductance is reduced by the closed loop wire. For example, where inductors are adopted in the modulator circuit, a closed loop wire is disposed around the outer periphery of the inductors.
摘要翻译：半导体器件设置有由电感器引起的干扰减小的高性能高频电路。在包括通过基带信号调制载波以调制RF信号的调制器电路以及解调器电路的半导体器件中，通过使用载波来解调RF信号以获得基带信号和本地振荡器以产生采用载波，分别具有闭环线的电感器。通过闭环线减少互感造成的干扰。例如，在调制器电路中采用电感器的情况下，围绕电感器的外周设置闭环线。

2. 发明申请

US20060038621A1 Semiconductor devices with inductors 有权
标题翻译：具有电感器的半导体器件
公开(公告)号：US20060038621A1
公开(公告)日：2006-02-23
申请号：US11183800
申请日：2005-07-19
申请人： Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
发明人： Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
IPC分类号： H03J7/02
CPC分类号： H01L23/5227 , H01F17/0006 , H01L2924/0002 , H01L2924/3011 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B5/1271 , H01L2924/00
摘要： Semiconductor devices provided with high performance high-frequency circuits that reduce interference caused by inductors are provided. In the semiconductor device including a modulator circuit to modulate a carrier wave by a base band signal to output an RF signal and a demodulator circuit to demodulate the RF signal by use of the carrier wave to gain the base band signal and a local oscillator to generate the carrier wave, inductors respectively having a closed loop wire are adopted. Interference caused by mutual inductance is reduced by the closed loop wire. For example, where inductors are adopted in the modulator circuit, a closed loop wire is disposed around the outer periphery of the inductors.
摘要翻译：提供了具有降低由电感器引起的干扰的高性能高频电路的半导体器件。在包括通过基带信号调制载波以调制RF信号的调制器电路和解调器电路的半导体器件中，通过使用载波来解调RF信号以获得基带信号和本地振荡器以产生采用载波，分别具有闭环线的电感器。通过闭环线减少互感造成的干扰。例如，在调制器电路中采用电感器的情况下，围绕电感器的外周设置闭环线。

3. 发明授权

US06384676B2 Signal processing semiconductor integrated circuit device 失效
公开(公告)号：US06384676B2
公开(公告)日：2002-05-07
申请号：US09789566
申请日：2001-02-22
申请人： Nobuhiro Kasa , Yoshiyasu Tashiro , Kazuaki Hori
发明人： Nobuhiro Kasa , Yoshiyasu Tashiro , Kazuaki Hori
IPC分类号： H01L2500
CPC分类号： H01L21/76264 , H01L27/0623 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

4. 发明授权

US07095999B2 Signal processing semiconductor integrated circuit device 失效
公开(公告)号：US07095999B2
公开(公告)日：2006-08-22
申请号：US10289331
申请日：2002-11-07
申请人： Nobuhiro Kasa , Yoshiyasu Tashiro , Kazuaki Hori
发明人： Nobuhiro Kasa , Yoshiyasu Tashiro , Kazuaki Hori
IPC分类号： H04B1/28
CPC分类号： H01L21/76264 , H01L27/0623 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

5. 发明授权

US06621108B2 Semiconductor device and the process of manufacturing the semiconductor device 有权
标题翻译：半导体器件和半导体器件的制造工艺
公开(公告)号：US06621108B2
公开(公告)日：2003-09-16
申请号：US09804193
申请日：2001-03-13
申请人： Yoshiyasu Tashiro , Nobuhiro Kasa , Kousuke Okuyama , Hiroyasu Ishizuka
发明人： Yoshiyasu Tashiro , Nobuhiro Kasa , Kousuke Okuyama , Hiroyasu Ishizuka
IPC分类号： H01L31112
CPC分类号： H01L27/0262 , H01L21/84 , H01L27/0255 , H01L27/0266 , H01L27/1203
摘要： Disclosed herein is a semiconductor device wherein a thyristor protective element and a trigger element are provided in a semiconductor layer formed on a buried insulating layer, and a trigger electrode (gate) of the thyristor protective element and a back gate of the trigger element are provided in the same p well and electrically connected to each other to thereby drive the thyristor protective element based on a substrate current produced by the breakdown of the trigger element.
摘要翻译：本发明公开了一种半导体器件，其中在埋置绝缘层上形成的半导体层中设置有晶闸管保护元件和触发器元件，并且提供了晶闸管保护元件的触发电极（栅极）和触发元件的后栅极在相同的p阱中并且彼此电连接，从而基于由触发元件的击穿产生的衬底电流来驱动晶闸管保护元件。

6. 发明授权

US06501330B2 Signal processing semiconductor integrated circuit device 失效
标题翻译：信号处理半导体集成电路器件
公开(公告)号：US06501330B2
公开(公告)日：2002-12-31
申请号：US10087820
申请日：2002-03-05
申请人： Nobuhiro Kasa , Yoshiyasu Tashiro , Kazuaki Hori
发明人： Nobuhiro Kasa , Yoshiyasu Tashiro , Kazuaki Hori
IPC分类号： H01L2500
CPC分类号： H01L21/76264 , H01L27/0623 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.
摘要翻译：一种半导体集成电路，包括包括被认为是噪声发生器的振荡电路的第一电路块和包括被认为容易受到由振荡电路产生的噪声影响的电路的第二电路块，最可能导致故障具有彼此分离的第一和第二电路块的单个半导体衬底。更具体地说，第一和第二电路块分别在半导体衬底的表面上的第一岛区和第二岛区中产生。第一和第二岛区均由绝缘隔离带包围。在基区域中产生低电阻半导体区域，不包括在第一岛区域和第二岛区域中的有源元件占据的位置，并且连接到稳定的电压端子。

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