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1. 发明申请

US20140353116A1 PART MOUNTING FACILITY AND PART MOUNTING METHOD 有权
标题翻译：部分安装设施和部分安装方法
公开(公告)号：US20140353116A1
公开(公告)日：2014-12-04
申请号：US14345033
申请日：2012-08-28
申请人： Nobuhiro Kozasa , Katsuyoshi Tsutsumida , Hidetoshi Takahashi , Daisuke Hashimoto , Tomohiro Sugimoto , Koichi Sano
发明人： Nobuhiro Kozasa , Katsuyoshi Tsutsumida , Hidetoshi Takahashi , Daisuke Hashimoto , Tomohiro Sugimoto , Koichi Sano
IPC分类号： B65G17/20 , B65G17/32
CPC分类号： B65G17/20 , B62D65/10 , B62D65/12 , B62D65/18 , B65G17/32
摘要： A part mounting facility is provided with substantially U-shaped conveyance paths having return bends, and the substantially U-shaped conveyance paths are formed by providing conveyance paths, which are in part mounting work regions, with the return bends. The substantially U-shaped conveyance paths are connected to each other, and the upstream-most substantially U-shaped conveyance path among the connected substantially U-shaped conveyance paths is connected to the downstream-most substantially U-shaped conveyance path to enable a workpiece conveyance dolly to circulate along the conveyance paths.
摘要翻译：部件安装设备具有大致U形的具有返回弯曲的输送路径，并且基本上U形的传送路径通过提供部分安装工作区域的输送路径与返回弯曲部一起形成。基本上U形的输送路径彼此连接，并且连接的大致U形输送路径中的最上游的大致U形输送路径连接到最下游的大致U形输送路径，以使工件运输台车沿着运输道路循环。

2. 发明授权

US09227786B2 Part mounting facility and part mounting method 有权
标题翻译：零件安装设备和零件安装方法
公开(公告)号：US09227786B2
公开(公告)日：2016-01-05
申请号：US14345033
申请日：2012-08-28
申请人： Nobuhiro Kozasa , Katsuyoshi Tsutsumida , Hidetoshi Takahashi , Daisuke Hashimoto , Tomohiro Sugimoto , Koichi Sano
发明人： Nobuhiro Kozasa , Katsuyoshi Tsutsumida , Hidetoshi Takahashi , Daisuke Hashimoto , Tomohiro Sugimoto , Koichi Sano
IPC分类号： B65G37/00 , B65G17/20 , B62D65/10 , B62D65/12 , B62D65/18 , B65G17/32
CPC分类号： B65G17/20 , B62D65/10 , B62D65/12 , B62D65/18 , B65G17/32
摘要： A part mounting facility is provided with substantially U-shaped conveyance paths having return bends, and the substantially U-shaped conveyance paths are formed by providing conveyance paths, which are in part mounting work regions, with the return bends. The substantially U-shaped conveyance paths are connected to each other, and the upstream-most substantially U-shaped conveyance path among the connected substantially U-shaped conveyance paths is connected to the downstream-most substantially U-shaped conveyance path to enable a workpiece conveyance dolly to circulate along the conveyance paths.
摘要翻译：部件安装设备具有大致U形的具有返回弯曲的输送路径，并且基本上U形的传送路径通过提供部分安装工作区域的输送路径与返回弯曲部一起形成。基本上U形的输送路径彼此连接，并且连接的大致U形输送路径中的最上游的大致U形输送路径连接到最下游的大致U形输送路径，以使工件运输台车沿着运输道路循环。

3. 发明授权

US09026734B2 Memory system and data deleting method 有权
标题翻译：内存系统和数据删除方法
公开(公告)号：US09026734B2
公开(公告)日：2015-05-05
申请号：US13312129
申请日：2011-12-06
申请人： Daisuke Hashimoto
发明人： Daisuke Hashimoto
IPC分类号： G06F13/00 , G06F12/00 , G06F12/02 , G06F12/08
CPC分类号： G06F12/0246 , G06F3/0608 , G06F3/061 , G06F3/0652 , G06F3/0679 , G06F12/08 , G06F2212/7205
摘要： According to one embodiment, a memory system includes: a memory area; a transfer processing unit that stores write data received from a host apparatus in the memory area; a delete notification buffer that accumulates a delete notification; and a delete notification processing unit. The delete notification processing unit collectively reads out a plurality of delete notifications from the delete notification buffer and classifies the read-out delete notifications for each unit area. The delete notification processing unit sequentially executes, for each unit area, processing for collectively invalidating write data related to one or more delete notifications classified in a same unit area and, in executing processing for one unit area in the processing sequentially executed for the each unit area, invalidates all write data stored in the one unit area after copying write data excluding write data to be invalidated stored in the one unit area to another unit area.
摘要翻译：根据一个实施例，存储器系统包括：存储区域; 传送处理单元，其将从主机装置接收的写入数据存储在存储区域中; 删除通知缓冲器，累积删除通知; 和删除通知处理单元。删除通知处理单元从删除通知缓冲器中共同读出多个删除通知，并对每个单位区域的读出删除通知进行分类。删除通知处理单元对于每个单位区域顺序地执行用于共同使与分类在同一单位区域中的一个或多个删除通知相关的写入数据无效的处理，并且在对于每个单元顺序执行的处理中对一个单位区域执行处理区域，在将除了存储在一个单位区域中的无效的写入数据的写入数据复制到另一单位区域之后，使存储在一个单位区域中的所有写入数据无效。

4. 发明授权

US08539315B2 Semiconductor storage device, nonvolatile semiconductor memory test method, and medium 有权
标题翻译：半导体存储器件，非易失性半导体存储器测试方法和介质
公开(公告)号：US08539315B2
公开(公告)日：2013-09-17
申请号：US13602763
申请日：2012-09-04
申请人： Daisuke Hashimoto
发明人： Daisuke Hashimoto
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C29/04 , G11C11/5628 , G11C16/00 , G11C29/06 , G11C29/08 , G11C29/44 , G11C29/52 , G11C29/82 , G11C2029/0409 , G11C2029/4402
摘要： According to one embodiment, a semiconductor storage device includes a nonvolatile semiconductor memory and a controller. The nonvolatile semiconductor memory includes a firmware area capable of storing firmware used to execute either a normal mode or an autorun test mode and a user area capable of storing user data. The controller reads the firmware from the nonvolatile semiconductor memory and determines whether the firmware has been set in either the normal mode or the autorun test mode. The controller repeats erasing, writing, and reading in each block in the user area using a cell applied voltage higher than a voltage used in a normal mode, and enters a block where an error has occurred as a bad block.
摘要翻译：根据一个实施例，半导体存储装置包括非易失性半导体存储器和控制器。非易失性半导体存储器包括能够存储用于执行正常模式或自动运行测试模式的固件的固件区域和能够存储用户数据的用户区域。控制器从非易失性半导体存储器读取固件，并确定固件是否设置在正常模式或自动运行测试模式。控制器使用高于正常模式下使用的电压的单元施加电压，在用户区域的每个块中重复擦除，写入和读取，并将错误发生的块输入为坏块。

5. 发明授权

US08238137B2 Ferroelectric random access memory device 有权
标题翻译：铁电随机存取存储器件
公开(公告)号：US08238137B2
公开(公告)日：2012-08-07
申请号：US12562051
申请日：2009-09-17
申请人： Daisuke Hashimoto , Daisaburo Takashima
发明人： Daisuke Hashimoto , Daisaburo Takashima
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric random access memory device has a first bit line, a first ferroelectric capacitor, a second bit line, a second ferroelectric capacitor and a first to fourth MOS transistor. The first bit line is changed to a first data potential according to first data stored in the first ferroelectric capacitor, the second bit line is changed to a second data potential according to second data obtained by inverting a logic of the first data, and then the second MOS transistor and the fourth MOS transistor are turned on.
摘要翻译：铁电随机存取存储器件具有第一位线，第一铁电电容器，第二位线，第二铁电电容器和第一至第四MOS晶体管。根据存储在第一铁电电容器中的第一数据将第一位线改变为第一数据电位，根据通过反转第一数据的逻辑获得的第二数据将第二位线改变为第二数据电位，然后第二MOS晶体管和第四MOS晶体管导通。

6. 发明授权

US08199554B2 Ferro-electric random access memory apparatus 失效
标题翻译：铁电随机存取存储器
公开(公告)号：US08199554B2
公开(公告)日：2012-06-12
申请号：US12876984
申请日：2010-09-07
申请人： Daisuke Hashimoto , Daisaburo Takashima
发明人： Daisuke Hashimoto , Daisaburo Takashima
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferro-electric random access memory apparatus has a memory cell array in which a plurality of memory cells each formed of a ferro-electric capacitor and a transistor are arranged, word lines are disposed to select a memory cell, plate lines are disposed to apply a voltage to a first end of the ferro-electric capacitor in a memory cell, and bit lines are disposed to read cell data from a second end of the ferro-electric capacitor in the memory cell. The ferro-electric random access memory apparatus has a sense amplifier which senses and amplifies a signal read from the ferro-electric capacitor onto the bit line. The ferro-electric random access memory apparatus has a bit line potential control circuit which exercises control to pull down a voltage on an adjacent bit line adjacent to the selected bit line onto which the signal is read, before operation of the sense amplifier at time of data readout.
摘要翻译：铁电随机存取存储装置具有其中布置有由铁电电容器和晶体管形成的多个存储单元的存储单元阵列，设置字线以选择存储单元，设置板线以应用存储单元中的铁电电容器的第一端的电压和位线被设置为从存储单元中的铁电电容器的第二端读取单元数据。铁电随机存取存储装置具有感测放大器，其感测并放大从铁电电容器读取到位线上的信号。铁电随机存取存储装置具有位线电位控制电路，该位线电位控制电路在该读出放大器的操作之前进行控制以在与读取信号的所选位线相邻的相邻位线上下拉电压数据读出。

7. 发明授权

US08059445B2 Ferroelectric memory 有权
标题翻译：铁电存储器
公开(公告)号：US08059445B2
公开(公告)日：2011-11-15
申请号：US12563950
申请日：2009-09-21
申请人： Daisuke Hashimoto , Daisaburo Takashima , Hidehiro Shiga
发明人： Daisuke Hashimoto , Daisaburo Takashima , Hidehiro Shiga
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/406
摘要： A ferroelectric memory according to an embodiment of the present invention includes a memory cell array including plural memory cells, and provided with plural word lines, plural bit lines, and plural plate lines, each of the plate lines corresponding to at least two of the word lines, an access control circuit configured to perform an access operation to a selected cell which is selected from the memory cells, and a refresh control circuit configured to perform a refresh operation, in a background of the access operation, on a refresh cell which is selected from the memory cells, the refresh control circuit performing the refresh operation when a plate line connected to the selected cell and a bit line connected to the selected cell are at the same potential after the access operation.
摘要翻译：根据本发明的实施例的铁电存储器包括：存储单元阵列，包括多个存储单元，并且具有多个字线，多个位线和多个板线，每个板线对应于该字中的至少两个线路，被配置为对从所述存储器单元中选择的所选择的单元执行访问操作的访问控制电路;以及刷新控制电路，被配置为在所述访问操作的后台中执行刷新操作，所述更新单元是从所述存储单元中选择所述刷新控制电路，所述刷新控制电路在连接到所选择的单元的板线和连接到所选择的单元的位线之间执行刷新操作，在所述访问操作之后处于相同的电位。

8. 发明申请

US20110223056A1 COPPER ALLOY SHEET 审中-公开
标题翻译：铜合金板
公开(公告)号：US20110223056A1
公开(公告)日：2011-09-15
申请号：US12672092
申请日：2008-07-24
申请人： Yasuhiro Aruga , Daisuke Hashimoto , Koya Nomura
发明人： Yasuhiro Aruga , Daisuke Hashimoto , Koya Nomura
IPC分类号： C22C9/02 , C22C9/06 , C22C9/10
CPC分类号： H01R13/03 , C22C9/00 , C22C9/02 , C22C9/06 , C22F1/08 , H01R13/11 , H01R43/16
摘要： The present invention relates to a Cu—Ni—Sn—P-based copper alloy sheet having a specific composition, where (1) the copper alloy sheet is set to have an electrical conductivity of 32% IACS or more, a stress relaxation ratio in the direction parallel to the rolling direction of 15% or less, a 0.2%-proof stress of 500 MPa or more and an elongation of 10% or more; (2) the X-ray diffraction intensity ratio I(200)/I(220) in the sheet surface is set to be a given value or less and at the same time, anisotropy in the stress relaxation resistance characteristic is reduced by fining the grain size; (3) the texture of the copper alloy sheet is set to a texture such that the distribution density of B orientation and the sum of distribution densities of B orientation, S orientation and Cu orientation each is set to fall in a specific range and bendability is thereby enhanced; or (4) the dislocation density measured using the value obtained by dividing the half-value breadth of the X-ray diffraction intensity peak from {200} plane in the copper alloy sheet surface by the peak height is set to a given value or more and press punchability is thereby enhanced. The Cu—Ni—Sn—P-based copper alloy sheet of the present invention is excellent in the properties required for a terminal or connector and further (1) has excellent strength-ductility balance, (2) satisfies the stress relaxation resistance characteristic in the direction orthogonal to the rolling direction, (3) has excellent bendability, or (4) has excellent press punchability.
摘要翻译：本发明涉及具有特定组成的Cu-Ni-Sn-P系铜合金板，其中（1）铜合金板的导电率设定为32％IACS以上，应力松弛率平行于轧制方向的方向为15％以下，0.2％以上的应力为500MPa以上，伸长率为10％以上。（2）将片材表面的X射线衍射强度比I（200）/ I（220）设定为规定值以下，同时，耐应力松弛特性的各向异性通过使晶粒大小; （3）将铜合金板的织构设定为使得B取向的分布密度和B取向，S取向和Cu取向的分布密度之和各自落在特定范围内，弯曲性为从而增强; 或（4）使用通过将铜合金板表面中的{200}面的X射线衍射强度峰值的半值宽度除以峰高而得到的值而测定的位错密度设定为规定值以上从而增强了冲压性。本发明的Cu-Ni-Sn-P系铜合金板的端子或连接器的特性优异，（1）具有优异的强度 - 延展性平衡，（2）满足与轧制方向正交的方向，（3）具有优异的弯曲性，或者（4）具有优异的冲压冲压性。

9. 发明申请

US20100136244A1 ELECTROLESS NICKEL PLATING BATH AND METHOD FOR ELECTROLESS NICKEL PLATING 有权
标题翻译：电镀镍镀层和电镀镍镀层的方法
公开(公告)号：US20100136244A1
公开(公告)日：2010-06-03
申请号：US12627624
申请日：2009-11-30
申请人： Hiromu Inagawa , Daisuke Hashimoto , Shinji Ishimaru , Masayuki Kiso
发明人： Hiromu Inagawa , Daisuke Hashimoto , Shinji Ishimaru , Masayuki Kiso
IPC分类号： B05D1/18 , B05C3/02
CPC分类号： C23C2/04 , C23C18/32 , C23C18/36
摘要： Disclosed is an electroless nickel plating bath not containing harmful metal species. In the electroless nickel plating bath, there are contained at least an iron ion source and an iodide ion source. With the use of the electroless nickel plating bath containing at least the iron ion source and the iodide ion source, it is possible to suppress decomposition of the plating bath without using harmful metal species to stabilize the plating bath.
摘要翻译：公开了一种不含有害金属物质的化学镀镍浴。在化学镀镍浴中，至少含有铁离子源和碘离子源。通过使用至少含有铁离子源和碘离子源的无电镀镍浴，可以抑制电镀液的分解，而不会使用有害的金属物质来稳定电镀液。

10. 发明申请

US20100032185A1 Method for Water-Sealing Treatment of On-Vehicle Electric Cables 审中-公开
标题翻译：车载电缆水密封处理方法
公开(公告)号：US20100032185A1
公开(公告)日：2010-02-11
申请号：US12084292
申请日：2006-11-01
申请人： Daisuke Hashimoto , Toshio Kometani , Kenji Miyamoto , Hirotaka Yamada
发明人： Daisuke Hashimoto , Toshio Kometani , Kenji Miyamoto , Hirotaka Yamada
IPC分类号： H01B7/282 , F16L5/02
CPC分类号： H01R4/70 , H01B7/285 , H01R13/5216
摘要： The present invention is intended to enable a efficient water-sealing treatment for an on-vehicle electric cable 10, i.e., an electric cable to be mounted on a vehicle, the cable having a conductor and a sheath disposed on the outside of the conductor, regardless of a length of the electric cable. The present invention provides a method comprising the step of establishing a state where a water-sealing agent 18 with fluidity covers a gap between the conductor and the sheath in an end of the on-vehicle electric cable 10, for example, through an operation of dropping the water-sealing agent 18 onto the end of the on-vehicle electric cable 10, and the step of pressurizing an ambient air around the water-sealing agent 18 to cause the water-sealing agent 18 to penetrate into the inside of the sheath of the on-vehicle electric cable 10.
摘要翻译：本发明旨在能够对车载电缆10（即，要安装在车辆上的电缆）进行有效的水封处理，该电缆具有布置在导体外侧的导体和护套，不管电缆的长度如何。本发明提供一种方法，其包括如下步骤：在车载电缆10的端部形成具有流动性的水密封剂18覆盖导体和护套之间的间隙的状态，例如通过操作将水密封剂18滴落到车载电缆10的端部上，对密封剂18周围的周围空气进行加压，使水密封剂18渗透到护套内部的车载电缆10。

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