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1. 发明专利

JP2014187353A Film adhesive, dicing tape with film adhesive, semiconductor device manufacturing method and semiconductor device 审中-公开
标题翻译：薄膜粘合剂，带胶带的贴带，半导体器件制造方法和半导体器件
公开(公告)号：JP2014187353A
公开(公告)日：2014-10-02
申请号：JP2014001514
申请日：2014-01-08
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： SUGAO YUKI , KIMURA TAKEHIRO
IPC分类号： H01L21/52 , C09J7/00 , C09J9/02 , C09J201/00 , H01L21/301
CPC分类号： H01L21/6836 , C08G59/621 , C08K3/02 , C08K3/08 , C08L33/06 , C09J7/20 , C09J9/02 , C09J11/04 , C09J163/00 , C09J2201/36 , C09J2201/622 , C09J2203/326 , C09J2205/102 , H01L21/50 , H01L23/48 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L2221/68327 , H01L2221/68377 , H01L2221/68381 , H01L2221/68386 , H01L2224/27003 , H01L2224/271 , H01L2224/27436 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29388 , H01L2224/29393 , H01L2224/29424 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/29499 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48145 , H01L2224/48225 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83203 , H01L2224/83851 , H01L2224/83885 , H01L2224/83907 , H01L2224/85207 , H01L2224/92 , H01L2224/94 , H01L2924/01322 , H01L2924/181 , H01L2924/3511 , Y10T428/1405 , Y10T428/28 , H01L2924/00014 , H01L2924/01006 , H01L2924/0635 , H01L2924/0665 , H01L2924/00012 , H01L2224/27 , H01L21/78 , H01L2224/83 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a film adhesive, a dicing tape with a film adhesive and a semiconductor device manufacturing method, which can prevent a thermal influence on a semiconductor wafer and inhibit warpage of the semiconductor wafer.SOLUTION: A film adhesive includes a thermoplastic resin and conductive particles and has an adhesion force of 0.5 N/10 mm and over which is measured at 25°C after attaching the film adhesive to a mirror silicon wafer at 40°C.
摘要翻译：要解决的问题：提供一种膜粘合剂，具有膜粘合剂的切割带和半导体装置制造方法，其可以防止对半导体晶片的热影响并且抑制半导体晶片的翘曲。溶解膜：胶粘剂包括热塑性树脂和导电颗粒，并且具有0.5N / 10mm的粘附力，并且在40℃下将膜粘合剂粘附到镜面硅晶片上之后在25℃下测量。

2. 发明专利

JP2013030500A Adhesive sheet for manufacturing semiconductor device, adhesive sheet for manufacturing semiconductor device integrated with dicing film, and semiconductor device containing adhesive sheet for manufacturing semiconductor device 审中-公开
标题翻译：用于制造半导体器件的粘合片，用于制造与定影膜一体化的半导体器件的粘合片，以及包含用于制造半导体器件的粘合片的半导体器件
公开(公告)号：JP2013030500A
公开(公告)日：2013-02-07
申请号：JP2011163391
申请日：2011-07-26
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： SHISHIDO YUICHIRO , KIMURA TAKEHIRO
IPC分类号： H01L21/52 , C09J7/00 , C09J11/04 , C09J133/00 , C09J161/04 , C09J163/00 , H01L21/301
CPC分类号： H01L24/29 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an adhesive sheet for manufacturing a semiconductor device, capable of suppressing diffusion of cation in the adhesive sheet for manufacturing a semiconductor device.SOLUTION: The adhesive sheet for manufacturing a semiconductor device is used for pasting a second semiconductor chip on a first semiconductor chip where a bonding wire is connected to its upper surface, so that a part of the bonding wire is embedded in the adhesive sheet for manufacturing a semiconductor device. It contains an ion capturing agent, with a glass transition temperature after thermo-setting being 50°C or higher.
摘要翻译：解决的问题：提供一种用于制造半导体器件的粘合片，能够抑制用于制造半导体器件的粘合片中的阳离子的扩散。解决方案：用于制造半导体器件的粘合片用于将第二半导体芯片粘贴在第一半导体芯片上，其中接合线连接到其上表面，使得接合线的一部分嵌入粘合剂用于制造半导体器件的片材。它含有离子捕获剂，热固化后的玻璃化转变温度为50℃或更高。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013028679A Adhesive sheet for producing semiconductor device, adhesive sheet for producing dicing film-integrated semiconductor device, and semiconductor device having adhesive sheet for producing the semiconductor device 审中-公开
标题翻译：用于制造半导体器件的粘合片，用于制造定影膜的集成半导体器件的粘合片，以及具有用于生产半导体器件的粘合片的半导体器件
公开(公告)号：JP2013028679A
公开(公告)日：2013-02-07
申请号：JP2011164522
申请日：2011-07-27
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： AMANO YASUHIRO , KIMURA TAKEHIRO
IPC分类号： C09J7/02 , C09J11/00 , C09J201/00 , H01L21/301 , H01L21/52
CPC分类号： H01L24/29 , H01L24/27 , H01L2224/83191 , H01L2924/10253 , H01L2924/181 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an adhesive sheet for producing a semiconductor device, which can reduce effects due to α-rays; an adhesive sheet for producing a dicing film-integrated semiconductor device; and a semiconductor device having an adhesive sheet for producing the semiconductor device.SOLUTION: There are provided: an adhesive sheet 3 for producing a semiconductor device with α-ray emission amount of 0.002 c/cm; an adhesive sheet 3 for producing a semiconductor device, including an inorganic filler and an ion scavenger; an adhesive sheet 3 for producing a semiconductor where the ion scavenger is at least one organic complex-forming compound selected from the group consisting of a nitrogen-containing compound, a hydroxy group-containing compound and a carboxy group-containing compound. A semiconductor wafer 4 is press-bonded on the part 3a to be pasted with the semiconductor wafer of the adhesive sheet 3 in the dicing film-integrated adhesive sheet 10, and adhered and held to be fixed. Here the dicing film 11 has a structure where a self-adhesive layer 2 is laminated on the substrate 1.
摘要翻译：解决的问题：提供一种能够减少由于α射线引起的影响的半导体装置的制造用粘合片; 一种用于制造切割膜集成半导体器件的粘合片; 以及具有用于制造半导体器件的粘合片的半导体器件。解决方案：提供一种用于制造α射线发射量为0.002c / cm 2的半导体器件的粘合片3 2 ; 用于制造包括无机填料和离子清除剂的半导体器件的粘合片3; 用于制造半导体的粘合片3，其中离子清除剂是选自含氮化合物，含羟基的化合物和含羧基的化合物中的至少一种选自有机络合物的化合物。将半导体晶片4压接在部分3a上以与切割膜一体的粘合片10中的粘合片3的半导体晶片粘合，并且被固定。这里，切割膜11具有在基板1上层压自粘层2的结构。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012186360A Dicing/die-bonding film and semiconductor element 审中-公开
标题翻译： DICING / DIE-BONDING FILM和SEMICONDUCTOR ELEMENT
公开(公告)号：JP2012186360A
公开(公告)日：2012-09-27
申请号：JP2011049141
申请日：2011-03-07
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： AMANO YASUHIRO , KIMURA TAKEHIRO
IPC分类号： H01L21/52 , C09J7/02 , C09J9/00 , C09J11/04 , C09J133/00 , C09J161/04 , H01L21/301
CPC分类号： H01L24/27 , H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2224/85207 , H01L2924/00014 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , H01L2924/351 , H01L2224/48 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a dicing/die-bonding film excellent in heat resistance, adhesiveness and moisture absorption property and having excellent thermal conductivity and electric insulation properties even in a reflow process or under a condition of high-temperature and humidity, and to provide a semiconductor device manufactured by using the dicing/die-bonding film.SOLUTION: A dicing/die-bonding film is provided with a thermosetting die-bonding film on a dicing film, in which adhesive composition composing the thermosetting die-bonding film includes an acrylate resin, a phenolic resin and thermal conductive particles. Assuming that, with respect to a total volume of the adhesive composition, a total content of the acrylate resin and the phenolic resin is A wt.% and a content of the thermal conductive particles is B wt.%, a value obtained from a formula (B/(A+B)) is within a range from 0.50 or more to 0.93 or less. Tensile storage elastic modulus of the thermosetting die-bonding film at 200°C after setting at 175°C for one hour is 0.1 MPa and over.
摘要翻译：要解决的问题：即使在回流工艺中或在高温和高温条件下，也提供耐热性，粘合性和吸湿性优异且具有优异的导热性和电绝缘性的切割/芯片接合薄膜，并且提供通过使用切割/芯片接合膜制造的半导体器件。解决方案：切割/芯片接合膜在切割膜上设置有热固性芯片接合膜，其中构成热固性芯片接合膜的粘合剂组合物包括丙烯酸酯树脂，酚醛树脂和导热颗粒。假设相对于粘合剂组合物的总体积，丙烯酸酯树脂和酚醛树脂的总含量为A重量％，导热性粒子的含量为B重量％，由式（B /（A + B））在0.50以上至0.93以下的范围内。在175℃下固化1小时后，热固性芯片接合薄膜在200℃下的拉伸储能弹性模量为0.1MPa以上。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012142370A Dicing die bond film and semiconductor device 有权
标题翻译：点焊膜和半导体器件
公开(公告)号：JP2012142370A
公开(公告)日：2012-07-26
申请号：JP2010292995
申请日：2010-12-28
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： AMANO YASUHIRO , KIMURA TAKEHIRO
IPC分类号： H01L21/301 , C09J7/02 , C09J9/02 , C09J11/04 , C09J133/00 , C09J161/00 , H01L21/52
CPC分类号： H01L24/29 , H01L24/27 , H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2224/85207 , H01L2924/00014 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , H01L2224/48 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a dicing die bond film which is less susceptible to peeling electrification even in a low humidity clean room and ensures good adhesion during die-bonding and good package-reliability, and a semiconductor device by using the dicing die bond film.SOLUTION: In the dicing die bond film in which a thermosetting die bond film is provided on a dicing film, an adhesive composition constituting the thermosetting die bond film comprises: an acrylic resin; a phenol resin; and conductive particles; when denoting the total content of the acrylic resin and the epoxy resin with respect to the whole amount of the adhesive composition and that of the conductive particles as A wt.% and B wt.%, respectively, a value obtained from a formula (B/(A+B)) is 0.40 or more and 0.96 or less, and a volume resistivity of the thermosetting die bond film is 1×10Ω cm or more and 9×10Ω cm or less.
摘要翻译：要解决的问题：即使在低湿度洁净室中也不易剥离电气化，从而提供了在芯片接合期间良好的粘附性和良好的封装可靠性的切割芯片接合膜，以及使用切割模具贴膜。解决方案：在切割薄膜上设置热固性模片接合薄膜的切割模片粘接薄膜中，构成热固性模片粘合薄膜的粘合剂组合物包括：丙烯酸树脂; 酚醛树脂; 和导电颗粒; 当表示丙烯酸树脂和环氧树脂相对于粘合剂组合物和导电颗粒的总量分别为A wt。％和B wt。％的总含量时，从式（B /（A + B））为0.40以上且0.96以下，热固性型芯接合膜的体积电阻率为1×10 -6Ω·cm以上，9 ×10 - 3 Ωcm以下。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012142368A Dicing die bond film and semiconductor device 审中-公开
标题翻译：贴片胶片和半导体器件
公开(公告)号：JP2012142368A
公开(公告)日：2012-07-26
申请号：JP2010292962
申请日：2010-12-28
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： AMANO YASUHIRO , KIMURA TAKEHIRO
IPC分类号： H01L21/52 , C09J7/02 , C09J9/02 , C09J11/00 , C09J133/00 , C09J163/00 , H01L21/301
CPC分类号： H01L24/29 , H01L24/27 , H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/73265 , H01L2224/83191 , H01L2224/85207 , H01L2924/00014 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2224/48 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a dicing die bond film which is less susceptible to peeling electrification even in a low humidity clean room and ensures good peelability during picking up, good adhesion during die-bonding and good package-reliability, and a semiconductor device by using the dicing die bond film.SOLUTION: In the dicing die bond film in which a thermosetting die bond film is provided on a dicing film, an adhesive composition constituting the thermosetting die bond film comprises: an acrylic resin; an epoxy resin; and conductive particles; when denoting the total content of the acrylic resin and the epoxy resin with respect to the whole amount of the adhesive composition and that of the conductive particles as A wt.% and B wt.%, respectively, a value obtained from a formula (B/(A+B)) is 0.40 or more and 0.96 or less, and a volume resistivity of the thermosetting die bond film is 1×10Ω cm or more and 9×10Ω cm or less.
摘要翻译：要解决的问题：提供即使在低湿度洁净室中也不易剥离电化的切割芯片接合膜，并且确保拾取时的良好的剥离性，在芯片接合期间的良好的粘附性以及良好的封装可靠性，以及半导体器件通过使用切割晶片接合膜。解决方案：在切割薄膜上设置热固性模片接合薄膜的切割模片粘接薄膜中，构成热固性模片粘合薄膜的粘合剂组合物包括：丙烯酸树脂; 环氧树脂; 和导电颗粒; 当表示丙烯酸树脂和环氧树脂相对于粘合剂组合物和导电颗粒的总量分别为A wt。％和B wt。％的总含量时，从式（B /（A + B））为0.40以上且0.96以下，热固性型芯接合膜的体积电阻率为1×10 -6Ω·cm以上，9 ×10 - 3 Ωcm以下。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012059768A Film for semiconductor device and semiconductor device 有权
标题翻译：半导体器件薄膜和半导体器件
公开(公告)号：JP2012059768A
公开(公告)日：2012-03-22
申请号：JP2010199027
申请日：2010-09-06
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： AMANO YASUHIRO , KIMURA TAKEHIRO
IPC分类号： H01L21/301 , C09J7/02 , C09J201/00 , H01L21/52
CPC分类号： C09J7/30 , C09J7/22 , C09J2203/326 , H01L23/293 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an adhesive film with a dicing sheet excellent in reliability and capable of easily performing cover film leader leading-out (leader leading-out) while maintaining a transfer mark suppression function when a film for a semiconductor device comprising a cover film on which an adhesive film with a dicing sheet having the adhesive film laminated on a dicing film is laminated at predetermined intervals is rewound in a roll form.SOLUTION: A film for a semiconductor device comprises a cover film on which an adhesive film with a dicing sheet having the adhesive film laminated on a dicing film is laminated at predetermined intervals. In this film, a ratio Ea/Eb of a tensile storage elastic modulus Ea of the dicing film at 23°C to a tensile storage elastic modulus Eb of the cover film at 23°C is within 0.001 to 100.
摘要翻译：要解决的问题：为了提供具有优异的可靠性并且能够容易地执行覆盖膜引导件引出（引导引出）同时保持转印标记抑制功能的切割片的粘合膜，当半导体膜其特征在于，具有覆盖膜，在其上以规定的间隔层叠有具有层叠在切割膜上的粘合膜的切割片的粘合膜以卷状卷绕。解决方案：一种用于半导体器件的膜包括覆盖膜，在其上以预定间隔层叠具有层压在切割膜上的粘合膜的切割片的粘合剂膜。在该膜中，23℃下的切割膜的拉伸储存弹性模量Ea与23℃下的覆盖膜的拉伸储存弹性模量Eb的比率Ea / Eb为0.001〜100倍。权利要求：（C）2012，JPO＆INPIT

8. 发明专利

JP2017092365A ダイシングテープ一体型接着シート、及び、半導体装置の製造方法审中-公开
公开(公告)号：JP2017092365A
公开(公告)日：2017-05-25
申请号：JP2015223757
申请日：2015-11-16
申请人：日東電工株式会社 , Nitto Denko Corp
发明人： SHISHIDO YUICHIRO , TAKAMOTO HISAHIDE , ONISHI KENJI , KIMURA TAKEHIRO
IPC分类号： H01L21/301 , C09J7/02 , C09J11/06 , C09J201/00
摘要：【課題】ダイシングテープから接着シート付き半導体チップをピックアップする際の剥離帯電により、半導体チップ上の回路が破壊されてしまうことを抑制することが可能なダイシングテープ一体型接着シートを提供すること。【解決手段】粘着剤層を有するダイシングテープと、粘着剤層上に形成された接着シートとを有し、接着シートは、粘着剤層と接触する側の面の表面固有抵抗値が、他方の面よりも小さく、接着シートを粘着剤層から剥離した際に測定される剥離帯電圧が500kV以下であるダイシングテープ一体型接着シート。【選択図】図1

9. 发明专利

JP2015005636A ダイシング・ダイボンディングフィルム审中-公开
标题翻译：定影/贴膜
公开(公告)号：JP2015005636A
公开(公告)日：2015-01-08
申请号：JP2013130272
申请日：2013-06-21
申请人：日東電工株式会社 , Nitto Denko Corp
发明人： KIMURA TAKEHIRO , MISUMI SADAHITO , ONISHI KENJI , SUGAO YUKI , SHISHIDO YUICHIRO
IPC分类号： H01L21/301
CPC分类号： H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要：【課題】ダイシングブレードの切れ味の低下を抑制できるとともに、ヒゲの発生を抑制できるダイシング・ダイボンディングフィルムを提供する。【解決手段】接着剤層3に厚さ100μmのウェハ4を貼り合わせた状態で、第1のダイシングブレードが切り込み深さ50μmでウェハを100m切り込んだ後、第1のダイシングブレードの切り込みに沿って、第2のダイシングブレードが少なくとも粘着剤層2に達する切り込み深さでウェハ及び接着剤層を100m切断したときの第2のダイシングブレードの摩耗量が20〜200μmであり、第2のダイシングブレードの幅は、第1のダイシングブレードのド幅より小さく、第1のダイシングブレードによる切り込み形成条件が、速度50mm/sec、回転数40000rpmであり、第2のダイシングブレードによる切断条件が、速度50mm/sec、回転数45000rpmである。【選択図】図1
摘要翻译：要解决的问题：提供一种能够抑制切割刀的锐度劣化并且还能够抑制晶须的发生的切割/芯片接合薄膜。解决方案：第二切割刀片的磨损量为20-200μm，当第一切割刀片将切片深度为50μm的厚度为100μm的晶片4切割，同时将晶片粘合到粘合剂层3，然后第二切割刀将晶片和粘合剂层切割100μm 在切割深度处至少沿着第一切割刀片的切口到达压敏粘合剂层2。第二切割刀片的宽度小于第一切割刀片的宽度。通过第一切割刀片的切割成形条件为50mm / sec的转速和40,000rpm的转数，并且第二切割刀片的切割条件为50mm / sec的速度和45,000rpm的转速 rpm。

10. 发明专利

JP2013191761A Adhesive agent composition for semiconductor device 审中-公开
标题翻译：用于半导体器件的胶粘剂组合物
公开(公告)号：JP2013191761A
公开(公告)日：2013-09-26
申请号：JP2012057511
申请日：2012-03-14
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： SHIRAKAWA YUSUKE , MISUMI SADAHITO , KIMURA TAKEHIRO , AMANO YASUHIRO
IPC分类号： H01L21/52 , C09J7/02 , C09J11/04 , C09J11/06 , C09J179/08
CPC分类号： H01L24/29 , H01L2224/32145 , H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2224/85207 , H01L2924/00014 , H01L2924/181 , H01L2224/48 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an adhesive agent composition for a semiconductor device capable of providing an adhesive agent layer having a high ion capture property and a high elastic modulus at a high temperature.SOLUTION: An adhesive agent composition for a semiconductor device contains a compound capturing ions and a polyimide resin having a glass-transition temperature of 10-80°C, and does not substantially contain an allyl modified polyimide resin. The adhesive agent composition can be used as an adhesive agent for die-bonding by adhering a sheet 1 formed by a 2-layer configuration of this adhesive agent composition 1a for a semiconductor device and a base material film 1b to a semiconductor wafer, and peeling the base material film 1b.
摘要翻译：要解决的问题：提供一种能够提供高离子捕获性和高弹性模量的粘合剂层的半导体器件用粘合剂组合物。解决方案：半导体器件用粘合剂组合物含有化合物捕获离子和玻璃化转变温度为10-80℃的聚酰亚胺树脂，基本不含烯丙基改性聚酰亚胺树脂。粘合剂组合物可以通过将由该半导体器件用粘合剂组合物1a和基材薄膜1b的2层构造形成的片材1粘合到半导体晶片上，并将剥离基材薄膜1b。

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