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1. 发明申请

US20140001598A1 ATOMIC LAYER DEPOSITION (ALD) OF TAALC FOR CAPACITOR INTEGRATION 审中-公开
标题翻译：用于电容器积分的TAALC的原子层沉积（ALD）
公开(公告)号：US20140001598A1
公开(公告)日：2014-01-02
申请号：US13977550
申请日：2011-12-21
申请人： Nick Lindert , Ruth A. Brain , Joseph M. Steigerwald , Timothy E. Glassman , Andre Baran
发明人： Nick Lindert , Ruth A. Brain , Joseph M. Steigerwald , Timothy E. Glassman , Andre Baran
IPC分类号： H01L49/02
CPC分类号： H01L28/60 , C23C16/0281 , C23C16/045 , C23C16/32 , C23C16/45525
摘要： Atomic layer deposition (ALD) of TaAlC for capacitor integration is generally described. For example, a semiconductor structure includes a plurality of semiconductor devices disposed in or above a substrate. One or more dielectric layers are disposed above the plurality of semiconductor devices. A metal-insulator-metal (MIM) capacitor is disposed in at least one of the dielectric layers, the MIM capacitor includes an electrode having a conformal layer of TaAlC and the MIM capacitor is electrically coupled to one or more of the semiconductor devices. Other embodiments are also disclosed and claimed.
摘要翻译：通常描述用于电容器集成的TaAlC的原子层沉积（ALD）。例如，半导体结构包括设置在基板中或上方的多个半导体器件。一个或多个电介质层设置在多个半导体器件的上方。金属绝缘体金属（MIM）电容器设置在至少一个电介质层中，MIM电容器包括具有保形层TaAlC的电极，并且MIM电容器电耦合到一个或多个半导体器件。还公开并要求保护其他实施例。

2. 发明授权

US08441097B2 Methods to form memory devices having a capacitor with a recessed electrode 有权
标题翻译：形成具有带有凹陷电极的电容器的存储器件的方法
公开(公告)号：US08441097B2
公开(公告)日：2013-05-14
申请号：US12646957
申请日：2009-12-23
申请人： Joseph M. Steigerwald , Nick Lindert , Steven J. Keating , Christopher J. Jezewski , Timothy E. Glassman
发明人： Joseph M. Steigerwald , Nick Lindert , Steven J. Keating , Christopher J. Jezewski , Timothy E. Glassman
IPC分类号： H01L21/02
CPC分类号： H01L28/90 , H01L27/0733
摘要： Methods to form memory devices having a MIM capacitor with a recessed electrode are described. In one embodiment, a method of forming a MIM capacitor with a recessed electrode includes forming an excavated feature defined by a lower portion that forms a bottom and an upper portion that forms sidewalls of the excavated feature. The method includes depositing a lower electrode layer in the feature, depositing an electrically insulating layer on the lower electrode layer, and depositing an upper electrode layer on the electrically insulating layer to form the MIM capacitor. The method includes removing an upper portion of the MIM capacitor to expose an upper surface of the electrode layers and then selectively etching one of the electrode layers to recess one of the electrode layers. This recess isolates the electrodes from each other and reduces the likelihood of a current leakage path between the electrodes.
摘要翻译：描述形成具有凹陷电极的MIM电容器的存储器件的方法。在一个实施例中，形成具有凹陷电极的MIM电容器的方法包括形成由形成底部的下部和形成挖掘特征的侧壁的上部限定的挖掘特征。该方法包括在特征中沉积下电极层，在下电极层上沉积电绝缘层，以及在电绝缘层上沉积上电极层以形成MIM电容器。该方法包括去除MIM电容器的上部以暴露电极层的上表面，然后选择性地蚀刻电极层之一以使一个电极层凹陷。该凹槽将电极彼此隔离并且减小了电极之间的电流泄漏路径的可能性。

3. 发明申请

US20110147888A1 METHODS TO FORM MEMORY DEVICES HAVING A CAPACITOR WITH A RECESSED ELECTRODE 有权
标题翻译：用于形成具有电容器的电容器的存储器件的方法
公开(公告)号：US20110147888A1
公开(公告)日：2011-06-23
申请号：US12646957
申请日：2009-12-23
申请人： Joseph M. Steigerwald , Nick Lindert , Steven J. Keating , Christopher J. Jezewski , Timothy E. Glassman
发明人： Joseph M. Steigerwald , Nick Lindert , Steven J. Keating , Christopher J. Jezewski , Timothy E. Glassman
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/90 , H01L27/0733
摘要： Methods to form memory devices having a MIM capacitor with a recessed electrode are described. In one embodiment, a method of forming a MIM capacitor with a recessed electrode includes forming an excavated feature defined by a lower portion that forms a bottom and an upper portion that forms sidewalls of the excavated feature. The method includes depositing a lower electrode layer in the feature, depositing an electrically insulating layer on the lower electrode layer, and depositing an upper electrode layer on the electrically insulating layer to form the MIM capacitor. The method includes removing an upper portion of the MIM capacitor to expose an upper surface of the electrode layers and then selectively etching one of the electrode layers to recess one of the electrode layers. This recess isolates the electrodes from each other and reduces the likelihood of a current leakage path between the electrodes.
摘要翻译：描述形成具有凹陷电极的MIM电容器的存储器件的方法。在一个实施例中，形成具有凹陷电极的MIM电容器的方法包括形成由形成底部的下部和形成挖掘特征的侧壁的上部限定的挖掘特征。该方法包括在特征中沉积下电极层，在下电极层上沉积电绝缘层，以及在电绝缘层上沉积上电极层以形成MIM电容器。该方法包括去除MIM电容器的上部以暴露电极层的上表面，然后选择性地蚀刻电极层之一以使一个电极层凹陷。该凹槽将电极彼此隔离并且减小了电极之间的电流泄漏路径的可能性。

4. 发明授权

US09691839B2 Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers 有权
公开(公告)号：US09691839B2
公开(公告)日：2017-06-27
申请号：US13996494
申请日：2011-12-14
申请人： Nick Lindert , Timothy E. Glassman , Andre Baran
发明人： Nick Lindert , Timothy E. Glassman , Andre Baran
IPC分类号： H01L27/108 , H01L49/02
CPC分类号： H01L28/40 , H01L27/108 , H01L27/10808 , H01L27/10852 , H01L28/75 , H01L28/90
摘要： Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.

5. 发明申请

US20130270676A1 METAL-INSULATOR-METAL (MIM) CAPACITOR WITH INSULATOR STACK HAVING A PLURALITY OF METAL OXIDE LAYERS 有权
标题翻译：金属绝缘体金属（MIM）电容器，具有绝缘体堆叠，具有大量的金属氧化物层
公开(公告)号：US20130270676A1
公开(公告)日：2013-10-17
申请号：US13996494
申请日：2011-12-14
申请人： Nick Lindert , Timothy E. Glassman , Andre Baran
发明人： Nick Lindert , Timothy E. Glassman , Andre Baran
IPC分类号： H01L49/02 , H01L27/108
CPC分类号： H01L28/40 , H01L27/108 , H01L27/10808 , H01L27/10852 , H01L28/75 , H01L28/90
摘要： Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.
摘要翻译：描述了具有多个金属氧化物层的具有绝缘体堆叠的金属 - 绝缘体金属（MIM）电容器。例如，用于半导体器件的MIM电容器包括设置在设置在基板上方的电介质层中的沟槽。第一金属板沿着沟槽的底部和侧壁设置。绝缘体堆叠设置在第一金属板的上方并与第一金属板保持一致。绝缘体堆叠包括具有第一介电常数的第一金属氧化物层和具有第二介电常数的第二金属氧化物层。第一介电常数高于第二介电常数。 MIM电容器还包括设置在绝缘体叠层上方并与绝缘体堆叠保持的第二金属板。

6. 发明授权

US06787440B2 Method for making a semiconductor device having an ultra-thin high-k gate dielectric 有权
公开(公告)号：US06787440B2
公开(公告)日：2004-09-07
申请号：US10315268
申请日：2002-12-10
申请人： Christopher G. Parker , Markus Kuhn , Ying Zhou , Scott A. Hareland , Suman Datta , Nick Lindert , Robert S. Chau , Timothy E. Glassman , Matthew V. Metz , Sunit Tyagi
发明人： Christopher G. Parker , Markus Kuhn , Ying Zhou , Scott A. Hareland , Suman Datta , Nick Lindert , Robert S. Chau , Timothy E. Glassman , Matthew V. Metz , Sunit Tyagi
IPC分类号： H01L214763
CPC分类号： H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/518
摘要： A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.

7. 发明申请

US20110147851A1 Method For Depositing Gate Metal For CMOS Devices 审中-公开
标题翻译： CMOS器件栅极金属沉积方法
公开(公告)号：US20110147851A1
公开(公告)日：2011-06-23
申请号：US12641497
申请日：2009-12-18
申请人： Christopher D. Thomas , Joseph M. Steigerwald , Timothy E. Glassman , Kyoung H. Kim , Dan S. Lavric , Michael Ollinger , M. N. Perez-Paz
发明人： Christopher D. Thomas , Joseph M. Steigerwald , Timothy E. Glassman , Kyoung H. Kim , Dan S. Lavric , Michael Ollinger , M. N. Perez-Paz
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823821 , H01L21/28088 , H01L21/823828 , H01L21/823842 , H01L29/4966
摘要： A semiconductor device comprises a substrate, a channel region, and a gate formed in association with the channel region. In one exemplary embodiment, the gate comprises a first material that is formed void free on an interior surface of a gate trench of the gate. A width of the gate trench comprises between about 8 nm and about 65 nm. The gate comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal. In another exemplary embodiment, the gate further comprises a second material formed void free on an interior surface of the first material and comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal.
摘要翻译：半导体器件包括与沟道区域相关联地形成的衬底，沟道区域和栅极。在一个示例性实施例中，栅极包括在栅极的栅极沟槽的内表面上无空隙形成的第一材料。栅极沟槽的宽度包括约8nm至约65nm。栅极包括与碳，铝或氮合金或其组合的过渡金属，以形成过渡金属的碳化物，氮化物或碳氮化物或其组合。在另一个示例性实施例中，门还包括在第一材料的内表面上形成为空隙的第二材料，并且包括与碳，铝或氮或其组合合金化的过渡金属，以形成碳化物，氮化物或氮化碳或其组合。

8. 发明授权

US5698022A Lanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide films 失效
标题翻译：镧系元素/磷前体组合物用于镧系元素/磷氧化物膜的MOCVD
公开(公告)号：US5698022A
公开(公告)日：1997-12-16
申请号：US696478
申请日：1996-08-14
申请人： Timothy E. Glassman , Paul V. Chayka
发明人： Timothy E. Glassman , Paul V. Chayka
IPC分类号： C07F9/09 , C07F9/50 , C23C16/18 , C23C16/40 , C23C16/56 , C23C16/00 , C07F5/00
CPC分类号： C23C16/18 , C07F9/095 , C07F9/5045 , C23C16/40 , C23C16/56
摘要： A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA.sub.3 (L).sub.x ; (ii) phosphido complexes of the formulae M(PR.sub.3).sub.3 or M(PR.sub.3).sub.3 L.sub.x ; and (iii) disubstituted phosphate complexes of the formulae A.sub.2 M(O.sub.2 P(OR).sub.2), AM(O.sub.2 P(OR).sub.2).sub.2, and M(O.sub.2 P(OR).sub.2).sub.3, wherein: x is from 1 to 5, A=Cp or .beta.-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C.sub.1 -C.sub.8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a .beta.-diketonate compound of formula (i), L is not phosphate or phosphine oxide. The precursor composition may be employed for forming a lanthanide metal/phosphorus oxide film on a substrate, by depositing a lanthanide metal/phosphorus material on the substrate from the lanthanide metal/phosphorus precursor composition in vaporized form, and incorporating oxygen in the lanthanide metal/phosphorus material to form the lanthanide metal/phosphorus oxide film on the substrate.
摘要翻译：用于镧系元素金属/磷氧化物膜的气相沉积形成的前体组合物，其包含前体化合物，所述前体化合物选自：（i）式MA3（L）x的加合物; （ii）式M（PR3）3或M（PR3）3Lx的膦酰基配合物; 和（iii）式A2M（O 2 P（OR）2），AM（O 2 P（OR）2）2和M（O 2 P（OR）2）3）的二取代磷酸盐络合物，其中：x为1至5，A Cp =β-二酮，Cp =环戊二烯基，甲基环戊二烯基或TMS-环戊二烯基，R = C 1 -C 8烷基，L =选自磷化氢，氧化膦，亚磷酸酯，磷酸酯和1 （二甲氧基磷酰基）苯，但条件是：当x为2或更大时，每个L可以与另一个L相同或不同; 并且当前体化合物是式（i）的β-二酮化合物时，L不是磷酸盐或氧化膦。前体组合物可以用于在基底上形成镧系元素金属/磷氧化物膜，通过在镧系元素金属/磷前体组合物上以蒸发形式沉积镧系元素金属/磷材料在基体上，并将镧系金属/ 磷材料在基板上形成镧系元素金属/磷氧化物膜。

9. 发明授权

US5679815A Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same 失效
标题翻译：用于化学气相沉积工艺的钽和铌试剂，以及使用其沉积涂层的方法
公开(公告)号：US5679815A
公开(公告)日：1997-10-21
申请号：US307316
申请日：1994-09-16
申请人： Peter S. Kirlin , Brian A. Vaartstra , Douglas Gordon , Timothy E. Glassman
发明人： Peter S. Kirlin , Brian A. Vaartstra , Douglas Gordon , Timothy E. Glassman
IPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C04B35/00
CPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C23C16/405
摘要： Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formula M(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.y wherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups.
摘要翻译：适合用作化学气相沉积源试剂的铌和钽化合物，以及使用该化合物沉积含铌或钽的涂层的方法。该化合物具有式M（OR1）x（R2-C（GH）-C-C（G）-R3）y，其中M是钽或铌; G是氧或硫; 且R 1，R 2和R 3独立地选自烃基，氟代烷基或烷氧基。

10. 发明申请

US20110171382A1 SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US20110171382A1
公开(公告)日：2011-07-14
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
IPC分类号： C23C16/06 , C07C49/92 , C07F7/28 , C07F7/00 , C07F7/24 , C07F5/00 , C09D1/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.
摘要翻译：一种金属有机络合物组合物，其包含选自以下的金属有机络合物：包含与一个或多个单齿或多齿有机配体配位的一个或多个金属中心原子的金属有机络合物，并与一个或多个络合的单齿或多齿配位体络合，所述配位体含有一个或多个独立地选自元素C，N，H，S，O和F的原子的原子; 其中当金属原子数为1并且同时复合单齿或多齿配体的数目为1时，金属有机络合物的络合单齿或多齿配体选自β-酮亚胺，β-二亚胺，C2- C10链烯基，C2-C15环烯基和C6-C10芳基。

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